Patent application number | Description | Published |
20100314244 | Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition - Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power. | 12-16-2010 |
20100314245 | Ionized Physical Vapor Deposition for Microstructure Controlled Thin Film Deposition - Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power. | 12-16-2010 |
20110240464 | APPARATUS FOR PHYSICAL VAPOR DEPOSITION HAVING CENTRALLY FED RF ENERGY - In some embodiments, a feed structure to couple RF energy to a target may include a body having a first end to receive RF energy and a second end opposite the first end to couple the RF energy to a target, the body further having a central opening disposed through the body from the first end to the second end; a first member coupled to the body at the first end, wherein the first member comprises a first element circumscribing the body and extending radially outward from the body, and one or more terminals disposed in the first member to receive RF energy from an RF power source; and a source distribution plate coupled to the second end of the body to distribute the RF energy to the target, wherein the source distribution plate includes a hole disposed through the plate and aligned with the central opening of the body. | 10-06-2011 |
20110240466 | PHYSICAL VAPOR DEPOSITION CHAMBER WITH ROTATING MAGNET ASSEMBLY AND CENTRALLY FED RF POWER - Embodiments of the present invention provide improved methods and apparatus for physical vapor deposition (PVD) processing of substrates. In some embodiments, an apparatus for physical vapor deposition (PVD) may include a target assembly having a target comprising a source material to be deposited on a substrate, an opposing source distribution plate disposed opposite a backside of the target and electrically coupled to the target along a peripheral edge of the target, and a cavity disposed between the backside of the target and the source distribution plate; an electrode coupled to the source distribution plate at a point coincident with a central axis of the target; and a magnetron assembly comprising a rotatable magnet disposed within the cavity and having an axis of rotation that is aligned with a central axis of the target assembly, wherein the magnetron assembly is not driven through the electrode. | 10-06-2011 |
20120000772 | Deposition Apparatus And Methods To Reduce Deposition Asymmetry - One or more embodiments of the invention are directed to deposition apparatuses comprising a grounded top wall, a processing chamber and a plasma source assembly having a conductive hollow cylinder and substantially continuous grounded shield substantially conforming to the shape of the hollow cylinder. | 01-05-2012 |
20120028461 | METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES - Methods for depositing metal in high aspect ratio features formed on a substrate are provided herein. In some embodiments, a method includes applying first RF power at VHF frequency to target comprising metal disposed above substrate to form plasma, applying DC power to target to direct plasma towards target, sputtering metal atoms from target using plasma while maintaining pressure in PVD chamber sufficient to ionize predominant portion of metal atoms, depositing first plurality of metal atoms on bottom surface of opening and on first surface of substrate, applying second RF power to redistribute at least some of first plurality from bottom surface to lower portion of sidewalls of the opening, and depositing second plurality of metal atoms on upper portion of sidewalls by reducing amount of ionized metal atoms in PVD chamber, wherein first and second pluralities form a first layer deposited on substantially all surfaces of opening. | 02-02-2012 |
20120149192 | METHODS FOR DEPOSITING METAL IN HIGH ASPECT RATIO FEATURES - Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening. | 06-14-2012 |
20130075246 | METHODS OF FORMING A METAL CONTAINING LAYER ON A SUBSTRATE WITH HIGH UNIFORMITY AND GOOD PROFILE CONTROL - Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma. | 03-28-2013 |
20130153412 | APPARATUS FOR ENABLING CONCENTRICITY OF PLASMA DARK SPACE - In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly. | 06-20-2013 |
20130192980 | CRYSTALLINE ORIENTATION AND OVERHANG CONTROL IN COLLISION BASED RF PLASMAS - Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures. | 08-01-2013 |
20130256125 | SUBSTRATE PROCESSING SYSTEM WITH MECHANICALLY FLOATING TARGET ASSEMBLY - Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member. | 10-03-2013 |
20130256126 | SUBSTRATE SUPPORT WITH RADIO FREQUENCY (RF) RETURN PATH - Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate includes a substrate support that may include a dielectric member having a surface to support a substrate thereon; one or more first conductive members disposed below the dielectric member and having a dielectric member facing surface adjacent to the dielectric member; and a second conductive member disposed about and contacting the one or more first conductive members such that RF energy provided to the substrate by an RF source returns to the RF source by traveling radially outward from the substrate support along the dielectric member facing surface of the one or more first conductive members and along a first surface of the second conductive member disposed substantially parallel to a peripheral edge surface of the one or more first conductive members after travelling along the dielectric layer facing surface. | 10-03-2013 |
20130256127 | SUBSTRATE PROCESSING SYSTEM HAVING SYMMETRIC RF DISTRIBUTION AND RETURN PATHS - A processing system may include a target having a central axis normal thereto; a source distribution plate having a target facing side opposing a backside of the target, wherein the source distribution plate includes a plurality of first features such that a first distance of a first radial RF distribution path along a given first diameter is about equal to a second distance of an opposing second radial RF distribution path along the given first diameter; and a ground plate opposing a target opposing side of the source distribution plate and having a plurality of second features disposed about the central axis and corresponding to the plurality of first features, wherein a third distance of a first radial RF return path along a given second diameter is about equal to a fourth distance of an opposing second radial RF return path along the given second diameter. | 10-03-2013 |
20130256128 | PROCESS KIT WITH PLASMA-LIMITING GAP - Apparatus for processing substrates are provided herein. In some embodiments, an apparatus includes a process kit comprising a shield having one or more sidewalls configured to surround a first volume, the first volume disposed within an inner volume of a process chamber; and a first ring moveable between a first position, wherein the first ring rests on the shield, and a second position, wherein a gap is formed between an outer surface of the first ring and an inner surface of the one or more sidewalls, wherein a width of the gap is less than about two plasma sheath widths for a plasma formed at a frequency of about 40 MHz or higher and at a pressure of about 140 mTorr or lower. | 10-03-2013 |
20140042023 | MAGNETRON DESIGN FOR EXTENDED TARGET LIFE IN RADIO FREQUENCY (RF) PLASMAS - Embodiments of magnetrons suitable to provide extended target life in radio frequency (RF) plasmas are provided. In some embodiments, apparatus and methods are provided to control film uniformity whilst extending the target life in an RF plasma. In some embodiments, the present invention may facilitate one or more of very high target utilization, more uniform metal ionization, and more uniform deposition on a substrate. In some embodiments, a magnetron may include a magnet support member having a center of rotation; and a plurality of magnetic tracks, each track comprising a pair of open loop magnetic poles parallel to and spaced apart from each other, wherein one track is disposed near the center of the magnet support member, and wherein a different track is disposed in a position corresponding to an outer edge of a target material to be deposited on a substrate when installed in the PVD process chamber. | 02-13-2014 |
20140246314 | CONFIGURABLE VARIABLE POSITION CLOSED TRACK MAGNETRON - Methods and apparatus for a magnetron assembly are provided herein. In some embodiments, a magnetron assembly includes a first base plate; a second base plate movable with respect to the first base plate between a first position and a second position; an outer magnetic pole in the shape of a loop and comprising an outer magnetic pole section coupled to the first base plate and an outer magnetic pole section coupled to the second base plate; and an inner magnetic pole disposed within the outer magnetic pole, wherein the outer and inner magnetic poles define a closed loop magnetic field, and wherein the closed loop magnetic field is maintained when the second base plate is disposed in both the first position and a second position. | 09-04-2014 |
20140262026 | PROCESS KIT FOR DEPOSITION AND ETCHING - Variable geometry process kits for use in semiconductor process chambers have been provided herein. In some embodiments, a process kit for use in a semiconductor process chamber includes: an annular body configured to rest about a periphery of a substrate support; a first ring positioned coaxially with the annular body and supported by the annular body; a second ring positioned coaxially with the first ring and supported by the first ring; and an annular shield comprising a horizontal leg positioned coaxially with the second ring such that a portion of the horizontal leg is aligned with and below portions of the first ring and second ring. | 09-18-2014 |
20140262764 | METHODS AND APPARATUS FOR REDUCING SPUTTERING OF A GROUNDED SHIELD IN A PROCESS CHAMBER - Methods and apparatus for physical vapor deposition are provided herein. In some embodiments, a process kit shield for use in a physical vapor deposition chamber may include an electrically conductive body having one or more sidewalls defining a central opening, wherein the body has a ratio of a surface area of inner facing surfaces of the one or more sidewalls to a height of the one or more sidewalls of about 2 to about 3. | 09-18-2014 |
Patent application number | Description | Published |
20120211354 | UNIFORMITY TUNING CAPABLE ESC GROUNDING KIT FOR RF PVD CHAMBER - Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery. | 08-23-2012 |
20130186751 | PINNED TARGET DESIGN FOR RF CAPACITIVE COUPLED PLASMA - In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly. | 07-25-2013 |
20140053776 | GAS LINE WELDMENT DESIGN AND PROCESS FOR CVD ALUMINUM - A system of gas lines for a processing chamber and a method of forming a gas line system for a processing chamber are provided. The system of gas lines includes electropolished multi-way valves that connect electropolished linear gas lines. By using multi-way valves rather than tee-fittings and electropolishing the linear gas lines, the nucleation of contaminating particles in the system of gas lines may be reduced. | 02-27-2014 |
20140216922 | RF DELIVERY SYSTEM WITH DUAL MATCHING NETWORKS WITH CAPACITIVE TUNING AND POWER SWITCHING - Apparatus and method for delivering power to a substrate processing chamber may include a target and a substrate support pedestal disposed in the chamber, a pedestal impedance match device coupled between the substrate support pedestal and ground, wherein the pedestal impedance match device is configured to adjust a bias voltage on the substrate support pedestal, a target impedance match device coupled between the target and ground, wherein the target impedance match device is configured to adjust a bias voltage on the target, a switch electrically coupled to the pedestal impedance match device and the target impedance match device, a first RF power source coupled to the switch, wherein the switch is configured to direct high frequency voltage from the first RF power source to either the target or the substrate support pedestal, and a second RF power source coupled to the substrate support pedestal. | 08-07-2014 |
20140251788 | METHODS AND APPARATUS FOR STABLE SUBSTRATE PROCESSING WITH MULTIPLE RF POWER SUPPLIES - Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency. | 09-11-2014 |
20140260544 | METHOD AND APPARATUS FOR MEASURING PRESSURE IN A PHYSICAL VAPOR DEPOSITION CHAMBER - A method and apparatus for physical vapor deposition are provided herein. In some embodiments, an apparatus for measuring pressure of a substrate processing chamber may include a shield having an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, a gas injection adapter disposed about an outer wall of the shield, a pressure measuring conduit formed within the gas injection adapter, wherein the pressure measuring conduit is fluidly coupled the inner volume via a gap formed between an outer wall of the shield and substrate processing chamber components disposed proximate the shield, and wherein the gap has substantially the same pressure as the inner volume, and a pressure detector coupled to the pressure measuring conduit. | 09-18-2014 |
20140261177 | APPARATUS FOR GAS INJECTION IN A PHYSICAL VAPOR DEPOSITION CHAMBER - Apparatus for physical vapor deposition are provided herein. In some embodiments, a shield for use in a physical vapor deposition chamber, comprises an annular one-piece body having an inner volume, a top opening and a bottom opening, wherein a bottom of the annular one-piece body includes an inner upwardly extending u-shaped portion, an annular groove formed in an inner wall of the one-piece body, and a plurality of gas distribution vents disposed along the annular feature and formed through the one-piece body, wherein the plurality of gas distribution vents are spaced apart from each other to distribute gases into the inner volume in a desired pattern. | 09-18-2014 |
20140263169 | METHODS FOR PROCESSING A SUBSTRATE USING MULTIPLE SUBSTRATE SUPPORT POSITIONS - In some embodiments, a method for processing a substrate in a process chamber having a substrate support configured to move in a direction perpendicular to a top surface of a cover ring of a process kit may include positioning the substrate support in a first position such that a top surface of the substrate is positioned about 3 mm above to about 10 mm below a top surface of a cover ring of a process kit disposed about the periphery of the substrate support; performing a plasma deposition process while the substrate support is in the first position; moving the substrate support to a second position such that the top surface of the substrate is disposed about 3 mm below to about 15 mm above the top surface of the cover ring; and performing a plasma etch process while the substrate support is in the second position. | 09-18-2014 |
20140273483 | METHODS FOR PROCESSING A SUBSTRATE USING A SELECTIVELY GROUNDED AND MOVABLE PROCESS KIT RING - Methods for processing a substrate are provided herein. In some embodiments, a method for processing a substrate may include placing a substrate atop a substrate support disposed beneath a processing volume of a process chamber having a grounded shield surrounding the process volume and a conductive cover ring selectably supportable by the grounded shield; positioning the substrate support in a first position such that the substrate support is not in contact with the conductive cover ring and such that a conductive member electrically coupled to the cover ring contacts the grounded shield to electrically couple the cover ring to the grounded shield; and performing a plasma enhanced etch process on the substrate. | 09-18-2014 |
20150221486 | METHODS FOR REDUCING MATERIAL OVERHANG IN A FEATURE OF A SUBSTRATE - Embodiments of methods for depositing material in features of a substrate have been provided herein. In some embodiments, a method for depositing material in a feature of a substrate includes depositing a material in a feature of a substrate disposed in a process chamber by sputtering a target using a plasma formed from a first gas; and etching the deposited material in the process chamber using a plasma formed from a second gas, different than the first gas, to at least partially reduce overhang of the material in the feature, wherein an atomic mass of the second gas is greater than an atomic mass of the first gas. | 08-06-2015 |
Patent application number | Description | Published |
20090314174 | ARM-FIRE DEVICES AND METHODS FOR PYROTECHNIC SYSTEMS - An ARM-FIRE device for a pyrotechnic system includes a first pyrotechnic, a second pyrotechnic, a passage extending between the first and second pyrotechnics, and an actuator/blocking device positioned between the first and second pyrotechnics. The first pyrotechnic is configured to be ignited by a heat source, and the second pyrotechnic is configured to be ignited by the first pyrotechnic in the FIRE arrangement. The actuator/blocking device includes a body configured to move between a first position in the SAFE arrangement and a second position in the FIRE arrangement, an aperture extending through the body, and an actuator. The aperture is offset from the passage in the first position of the body and is aligned with the passage in the second position of the body. The actuator is configured to move the body between the first and second positions. The first pyrotechnic, the second pyrotechnic, and the actuator/blocking device occupy a volume of approximately 3.0 cubic inches or less. | 12-24-2009 |
20100288148 | NETWORKED PYROTECHNIC ACTUATOR INCORPORATING HIGH-PRESSURE BELLOWS - A pyrotechnically powered actuator having a bellows that provides a force and stroke upon initiation is disclosed. The actuator includes a housing body with a first end and a second end. The bellows is coupled to the first end of the housing body. A cover is coupled to the second end of the housing body. An initiator is located within the housing body and includes a pyrotechnic material and a bridge element. The housing body, the bellows, and the cover define a hermetically sealed chamber. The bellows is compact, lightweight, and can withstand internal and external pressure at least as high as 3,000 psi. An exemplary embodiment includes a housing body that provides a compartment for adding supplemental pyrotechnic material. Further exemplary embodiments of the actuator include a chip initiator that requires less than 1 amp to function in less than 10 milliseconds. | 11-18-2010 |
20110204177 | PROJECTILE DIVERTER RELEASE AND METHOD OF DIVERTING A PROJECTILE - A diverter for changing the trajectory of a projectile includes a release mechanism that extends along a longitudinal axis between first and second ends. A mass is coupled to the first end, and the second end is coupled to the projectile. The release mechanism includes a groove and an explosive charge. The groove is disposed between the first and second ends and cinctures the longitudinal axis. The explosive charge is disposed along the longitudinal axis between the groove and the second end. | 08-25-2011 |
20120055365 | SAFE AND ARM MECHANISMS AND METHODS FOR EXPLOSIVE DEVICES - A SAFE and ARM mechanism is includes an elongated casing having a first end and a second end. A high-G force firing pin is arranged relatively near to the first end and a low-G force firing pin is arranged relatively near to the second end. A detonator is arranged between the high-G force firing pin and the first end. When a G-force within a first range of magnitudes is applied to the casing along its longitudinal axis, the low-G force firing pin is displaced to strike a portion of the high-G force firing pin, and if a G-force within a second range of magnitudes is applied to the casing along its longitudinal axis, the high-G force firing pin is displaced to strike the detonator. The device may become ARMED in response to a centrifugal force generated by spinning the casing on its longitudinal axis. | 03-08-2012 |
20120174763 | LIGHTWEIGHT ARMOR PROTECTED SHELTERS AND METHODS OF PREPARING SUCH SHELTERS - Lightweight armor protection systems and methods for armoring a soft-skinned shelter can include a plurality of panel assemblies and a plurality of couplers configured to secure the panel assemblies relative to the soft-skinned shelter. Individual panel assemblies include a plurality of panels positioned adjacent to one another along lengthwise panel edges, wherein the panels are composed of a ballistic material, and a plurality of hinges pivotally coupling the panels. Adjacent individual panels pivot relative to one another between a stacked arrangement of the panel assembly and an expanded arrangement of the panel assembly. | 07-12-2012 |
20120210898 | Safe And Arm Mechanisms And Methods For Explosive Devices - A SAFE and ARM mechanism includes an elongated casing having a first end and a second end. A high-G force firing pin is arranged relatively near to the first end and a low-G force firing pin is arranged relatively near to the second end. A detonator is arranged between the high-G force firing pin and the first end. When a G-force within a first range of magnitudes is applied to the casing along its longitudinal axis, the low-G force firing pin is displaced to strike a portion of the high-G force firing pin, and if a G-force within a second range of magnitudes is applied to the casing along its longitudinal axis, the high-G force firing pin is displaced to strike the detonator. The device may become ARMED in response to a centrifugal force generated by spinning the casing on its longitudinal axis. | 08-23-2012 |
Patent application number | Description | Published |
20130072319 | CORRELATED SET OF GOLF CLUB HEADS - A correlated set of golf club heads is provided. The set of golf clubs has a first club head that, when oriented in a reference position, includes: a first loft angle, a first heel portion, a first toe portion opposite the first heel portion, a first top portion, and a first sole portion that comprises a first sole rail having a first setback length. The set of golf clubs also has a second club head that, when oriented in the reference position, includes: a second loft angle greater than the first loft angle, a second heel portion, a second toe portion opposite the second heel portion, a second top portion, and a second sole portion that comprises a second sole rail having a second setback length that is different from the first setback length. | 03-21-2013 |
20140045609 | GOLF CLUB HEAD - A golf club head comprises a loft angle no less than 18°, a striking face, a sole portion, and a top portion having an exterior surface. In an imaginary vertical plane spaced from a face center by no more than 10 mm and perpendicular to an imaginary striking face plane, an imaginary line segment has a length of 25 mm, a first endpoint located in the imaginary striking face plane, a second endpoint located above the exterior surface, and forms an angle θ with the striking face plane between 55° and 65°. The line segment is tangent to the exterior surface at a first point. A second point is located on the imaginary line segment and spaced from the first point by no less than 1 mm. The second point is spaced from the exterior surface by a gap distance that is no greater than 0.15 mm. | 02-13-2014 |
20150209627 | GOLF CLUB HEAD - A golf club head comprises a loft angle no less than 18°, a striking face, a sole portion, and a top portion having an exterior surface. In an imaginary vertical plane spaced from a face center by no more than 10 mm and perpendicular to an imaginary striking face plane, an imaginary line segment has a length of 25 mm, a first endpoint located in the imaginary striking face plane, a second endpoint located above the exterior surface, and forms an angle θ with the striking face plane between 55° and 65°. The line segment is tangent to the exterior surface at a first point. A second point is located on the imaginary line segment and spaced from the first point by no less than 1 mm. The second point is spaced from the exterior surface by a gap distance that is no greater than 0.15 mm. | 07-30-2015 |
20150265886 | CORRELATED SET OF GOLF CLUB HEADS - A correlated set of golf club heads is provided. The set of golf clubs has a first club head that, when oriented in a reference position, includes: a first loft angle, a first heel portion, a first toe portion opposite the first heel portion, a first top portion, and a first sole portion that comprises a first sole rail having a first setback length. The set of golf clubs also has a second club head that, when oriented in the reference position, includes: a second loft angle greater than the first loft angle, a second heel portion, a second toe portion opposite the second heel portion, a second top portion, and a second sole portion that comprises a second sole rail having a second setback length that is different from the first setback length. | 09-24-2015 |