Patent application number | Description | Published |
20080231337 | Compact subnanosecond high voltage pulse generation system for cell electro-manipulation - Disclosed are methods and systems for subnanosecond rise time high voltage (HV) electric pulse delivery to biological loads. The system includes an imaging device and monitoring apparatus used for bio-photonic studies of pulse induced intracellular effects. The system further features custom fabricated microscope slide having micro-machined electrodes. A printed circuit board to interface the pulse generator to the micro-machined glass slide having the cell solution. An low-parasitic electronic setup to interface with avalanche transistor-switched pulse generation system. The pc-board and the slide are configured to match the output impedance of the pulse generator which minimizes reflection back into the pulse generator, and minimizes distortion of the pulse shape and pulse parameters. The pc-board further includes a high bandwidth voltage divider for real-time monitoring of pulses delivered to the cell solutions. | 09-25-2008 |
20090114244 | EDGE ELECTRODES WITH VARIABLE POWER - The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a bottom electrode configured to receive the substrate, wherein the bottom electrode is coupled to a radio frequency (RF) power supply. The plasma processing chamber also includes a top edge electrode surrounding an insulating plate opposing the bottom electrode. The top edge electrode is electrically grounded. The plasma processing chamber further includes a bottom edge electrode surrounding the bottom electrode. The bottom edge electrode opposes the top edge electrode. The top edge electrode, the substrate disposed on the bottom electrode, and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The bottom edge electrode and the bottom electrode are electrically coupled to one another through an RF circuit tunable to adjust the amount of RF current going between the substrate disposed on the bottom electrode, the bottom edge electrode and the top edge electrode. | 05-07-2009 |
20090165954 | ELECTRICALLY ENHANCING THE CONFINEMENT OF PLASMA - A vacuum plasma processor includes a chamber having a grounded wall and an outlet port. Plasma is excited at a first RF frequency in a chamber region spaced from the wall and outlet port. A. structure confines the plasma to the region while enabling gas to flow from the region to the outlet port. RF electric power at a second frequency connected to the confining structure causes the confining structure to be at a potential different from ground to increase the size of a sheath between the plasma and confining structure and increase the confining structure effectiveness. The region includes an electrode connected to ground by a circuit that is series resonant to the first frequency and includes capacitance of the sheath. | 07-02-2009 |
20090166326 | EDGE ELECTRODES WITH DIELECTRIC COVERS - The embodiments provide apparatus and methods for removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In an exemplary embodiment, a plasma processing chamber configured to clean a bevel edge of a substrate is provided. The plasma processing chamber includes a substrate support configured to receive the substrate. The plasma processing chamber also includes a bottom edge electrode surrounding the substrate support. The bottom edge electrode and the substrate support are electrically isolated from one another by a bottom dielectric ring. A surface of the bottom edge electrode facing the substrate is covered by a bottom thin dielectric layer. The plasma processing chamber further includes a top edge electrode surrounding a top insulator plate opposing the substrate support. The top edge electrode is electrically grounded. A surface of the top edge electrode facing the substrate is covered by a top thin dielectric layer. The top edge electrode and the bottom edge electrode oppose one another and are configured to generate a cleaning plasma to clean the bevel edge of the substrate. | 07-02-2009 |
20090315596 | MATCHING CIRCUIT FOR A COMPLEX RADIO FREQUENCY (RF) WAVEFORM - A complex waveform frequency matching device is disclosed. In various embodiments, the matching device comprises a plurality of radio frequency generators coupled in parallel with one another. Each subsequent one of the plurality of radio frequency generators is configured to produce a harmonic frequency related by an integral multiple to a frequency produced by any lower-frequency producing radio frequency generator, thereby generating a complex waveform. A plurality of frequency splitter circuits is coupled to an output of the plurality of radio frequency generators, and each of a plurality of matching networks has an input coupled to an output of one of the plurality of frequency splitter circuits and an output configured to be coupled to a plasma chamber. | 12-24-2009 |
20100038971 | NANOSECOND PULSE GENERATOR - This invention relates to a pulse generator circuit for delivering a short high current pulse to a load. This pulse generator comprises a junction recovery diode, a switch, a first resonant circuit and a second resonant circuit. The diode may be configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is discharged by a reverse flow of a current. After the diode rapidly switch opens, the pulse generator may provide a reverse current to the load. This pulse generator may be configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver one pulse or plurality of pulses to biological cells such as tumor cells. | 02-18-2010 |
20100141043 | HIGH VOLTAGE NANOSECOND PULSE GENERATOR USING FAST RECOVERY DIODES FOR CELL ELECTRO-MANIPULATION - A pulse generator circuit may include a diode configured to operate as an opening switch, a tank circuit in series with the diode having an admittance that is switchable from a first value to a second value that is different from the first value, and a switching system configured to cause the tank circuit to switch between the first value and the second value. The diode may saturate in less than 100 nanoseconds. A saturable core transformer may operate as a switch that controls the opening of the diode. The pulse generator may generate a plurality of pulses, each having a length of no more than 3 nanoseconds and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver the plurality of pulses to biological cells. | 06-10-2010 |
20100156195 | NANOSECOND PULSE GENERATOR WITH A PROTECTOR CIRCUIT - This invention relates to a pulse generator circuit for delivering a short high current pulse to a load. This pulse generator comprises a junction recovery diode, a switch, a first resonant circuit and a second resonant circuit. The diode may be configured to store charges in its depletion layer when there is a forward flow of a current and to rapidly switch open after the depletion layer is discharged by a reverse flow of a current. After the diode rapidly switch opens, the pulse generator may provide a reverse current to the load. This pulse generator may be configured to generate at least one pulse that is having a length of no more than 100 nanoseconds at the full-width-at-half-maximum and an amplitude of at least 1 kilovolt. Electrodes may be connected to the pulse generator to deliver one pulse or plurality of pulses to biological cells such as tumor cells. | 06-24-2010 |
20100181025 | APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE - An apparatus generating a plasma for removing fluorinated polymer from a substrate is provided. The apparatus includes a powered electrode assembly, which includes a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The apparatus also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated. The first wire mesh is shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, which has an outlet at one end for providing the plasma to remove the fluorinated polymer. | 07-22-2010 |
20100315064 | Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing - Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal. | 12-16-2010 |
20110095674 | Cold Cathode Lighting Device As Fluorescent Tube Replacement - A cold cathode lighting device is a fluorescent tube replacement and has a transparent tube, a cold cathode formed as a wire or rod with an electron emissive surface and passing through a center of the transparent tube. An extraction grid is formed around and spaced apart from the cold cathode and has an external diameter smaller than an inner diameter of the transparent tube. A phosphor material and a conductive material form an anode on an inner surface of the transparent tube. A vacuum is maintained within the transparent tube and a power conversion circuit in an end unit converts electrical power into a first potential applied to the cold cathode, a second potential applied to the extraction grid and a third potential applied to the anode. Electrons emitted from the cold cathode accelerate towards the anode and light is emitted from the fluorescent tube replacement light emitting device. | 04-28-2011 |
20110120653 | ANTENNA FOR PLASMA PROCESSOR AND APPARATUS - An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor. | 05-26-2011 |
20110186227 | PLASMA CHAMBER FOR WAFER BEVEL EDGE PROCESSING - The embodiments provide structures and mechanisms for removal of etch byproducts, dielectric films and metal films on and near the substrate bevel edge, and chamber interior to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. In one example, a chamber for wafer bevel edge cleaning is provided. The chamber includes a bottom electrode having a bottom electrode surface for supporting the wafer when present. Also included is a top edge electrode surrounding an insulating plate. The insulator plate is opposing the bottom electrode. The top edge electrode is electrically grounded and has a down-facing L shape. Further included in the chamber is a bottom edge electrode that is electrically grounded and spaced apart from the bottom electrode. The bottom edge electrode is disposed to encircle the bottom electrode. The bottom edge electrode is oriented to oppose the down-facing L shape of the top edge electrode. | 08-04-2011 |
20120206127 | MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING - Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal. | 08-16-2012 |
20120248978 | ANTENNA FOR PLASMA PROCESSOR AND APPARATUS - An antenna includes excitation terminals responsive to an RF source to supply an RF electromagnetic field to a plasma that processes a workpiece in a vacuum chamber. The coil includes a transformer having a primary winding coupled to the excitation terminals and a multi-turn plasma excitation secondary winding connected in series with a capacitor. | 10-04-2012 |
20120273134 | Bevel Edge Plasma Chamber With Top and Bottom Edge Electrodes - A plasma processing chamber configured for cleaning a bevel edge of a substrate is provided. The chamber includes a top edge electrode surrounding an insulating plate, and the insulator plate opposes a bottom electrode. The top edge electrode is electrically grounded and separated from the insulator plate by a top dielectric ring. The chamber also includes a bottom edge electrode that is electrically grounded and surrounds the bottom electrode and is separated from the bottom electrode by a bottom dielectric ring. The bottom edge electrode is oriented to oppose the top edge electrode, and the bottom edge electrode has an L shape that is up-facing. Bevel edge plasma processing of a substrate edge is configured to be processed in a chamber having the top and bottom edge electrodes. | 11-01-2012 |
20140109886 | PULSED POWER SYSTEMS AND METHODS - A system and method for providing pulsed power to improve performance efficiency. In one approach, pulsed power is employed to improve fuel efficiency and power of an engine. The system and method can involve a transient plasma plug assembly intended to replace a traditional spark plug. Alternatively, an approach involving a pulse generator and a nanosecond, high voltage pulse carrying ignition cable is contemplated. | 04-24-2014 |
20140230770 | TRANSIENT PLASMA ELECTRODE FOR RADICAL GENERATION - A transient plasma electrode apparatus may include an elongated electrode having a first and a second end. The first end may connect to a source of high voltage pulses. An insulation jacket may surround a portion of the electrode. An electric-field enhancing protrusion may be at the second end of the elongated electrode. The protrusion may cause an electric field when a high voltage is applied between the elongated electrode and a metallic wall of a combustion chamber in which the electrode is placed. The electric field may be greater at the second end as compared to along the length of the electrode. | 08-21-2014 |
20140230790 | ELECTRODES FOR MULTI-POINT IGNITION USING SINGLE OR MULTIPLE TRANSIENT PLASMA DISCHARGES - A device for providing ignition of a fuel-air mixture using a transient plasma discharge is provided. The device includes an anode coupled to receive a voltage; and a cathode disposed in proximity to the anode and coupled to a ground, wherein at least one of the anode and the cathode includes a protrusion that enhances an electric field formed between the anode and the cathode, the protrusion forming a sharp edge defining a plurality of points, each point forming a path of shortest distance between the anode and the cathode. | 08-21-2014 |