Patent application number | Description | Published |
20080203980 | PROGRAMMABLE VOLTAGE DIVIDER - A test circuit and programmable voltage divider that may be used in the test circuit. The programmable voltage divider develops a voltage difference signal that may be digitally selected. The test circuit may be used to test and characterize sense amplifiers. The programmable voltage divider develops a signal with a selected polarity and magnitude that is provided to a sense amplifier being tested. The sense amplifier is set and its output latched. The latch contents are checked against an expected value. The difference voltage may be changed and the path retested to find passing and failing points. | 08-28-2008 |
20080231323 | INTEGRATED CIRCUIT CHIP WITH IMPROVED ARRAY STABILITY - A multi-threshold integrated circuit (IC) that may be supplied by multiple supplies, with an array of latches such as an array static random access memory (SRAM) cells and a CMOS SRAM with improved stability and reduced subthreshold leakage. Selected devices (NFETs and/or PFETs) in array cells and support logic, e.g., in the data path and in non-critical logic, are tailored for lower gate and subthreshold leakage. Normal base FETs have a base threshold and tailored FETs have a threshold above. In a multi-supply chip, circuits with tailored FETs are powered by an increased supply voltage. | 09-25-2008 |
20080232149 | INTEGRATED CIRCUIT CHIP WITH IMPROVED ARRAY STABILITY - A multi-threshold integrated circuit (IC) that may be supplied by multiple supplies, with an array of latches such as an array static random access memory (SRAM) cells and a CMOS SRAM with improved stability and reduced subthreshold leakage. Selected devices (NFETs and/or PFETs) in array cells and support logic, e.g., in the data path and in non-critical logic, are tailored for lower gate and subthreshold leakage. Normal base FETs have a base threshold and tailored FETs have a threshold above. In a multi-supply chip, circuits with tailored FETs are powered by an increased supply voltage. | 09-25-2008 |
20080270864 | DIFFERENCE SIGNAL PATH TEST AND CHARACTERIZATION CIRCUIT - A test circuit and programmable voltage divider that may be used in the test circuit. The programmable voltage divider develops a voltage difference signal that may be digitally selected. The test circuit may be used to test and characterize sense amplifiers. The programmable voltage divider develops a signal with a selected polarity and magnitude that is provided to a sense amplifier being tested. The sense amplifier is set and its output latched. The latch contents are checked against an expected value. The difference voltage may be changed and the path retested to find passing and failing points. | 10-30-2008 |
20090034345 | Eight Transistor SRAM Cell with Improved Stability Requiring Only One Word Line - An SRAM cell that is accessed by a single word line and separate access transistors for read and write operations. A pair of write bit line transfer devices provide respectively access to the right and left sides of cross coupled pull-up, pull-down transistor pairs for a write operation, and a single read bit line transistor in series with the word line transistor, when selected, reads the content of the cell. | 02-05-2009 |
20090063774 | High Performance Pseudo Dynamic 36 Bit Compare - A cache memory high performance pseudo dynamic address compare path divides the address into two or more address segments. Each segment is separately compared in a comparator comprised of static logic elements. The output of each of these static comparators is then combined in a dynamic logic circuit to generate a dynamic late select output. | 03-05-2009 |
20090189675 | HIGH PERFORMANCE PSEUDO DYNAMIC PULSE CONTROLLABLE MULTIPLEXER - A high performance, set associative, cache memory tag multiplexer provides wide output pulse width without impacting hold time by separating the evaluation and restore paths and using a wider clock in the restore path than in the evaluation path. A clock controls the evaluation of the input signals. Its leading edge (i.e., rising edge) turns on NR to allow evaluation, its trailing edge (falling edge) turns off NR to stop evaluation. At this point, when NR is shut off, the inputs can start changing to set up for the next cycle. Hence the hold time of the input is determined by the clock trailing edge. | 07-30-2009 |
20090267667 | Low Power Programmable Clock Delay Generator with Integrated Decode Function - A programmable Local Clock Buffer has a single inverter between the clock input and the delayed clock output. A transistor switch modulates the single inverter stage between a clock signal transmit state and a non-transmitting state. A combination of delay select bits control the timing of the beginning and ending of the transmit state of the inverter relative to the clock input via the transistor switch. | 10-29-2009 |
20100302895 | ENHANCED PROGRAMMABLE PULSEWIDTH MODULATING CIRCUIT FOR ARRAY CLOCK GENERATION - A pulsewidth modulation circuit uses a plurality of programmable paths to connect its output line to ground connections. The paths have different numbers of serially-connected NFETs to provide different pulldown rates. A desired programmable paths is selected based on encoded control signals, with decode logic integrated into the programmable paths. The decode logic includes, for each path, at least two transistors controlled by one of the encoded signals or their complements. A default path to ground may also be provided for use when none of the programmable paths is selected. For example, two encoded signals may be used to select 1-in-4 among the default path and three programmable paths. Integration of the decode logic into the programmable paths results in smaller overall circuit area, leading to reduced power usage, while still retaining the orthogonal benefit of encoded control signals. | 12-02-2010 |
20110075504 | Dual Beta Ratio SRAM - A static random access memory (SRAM) cell includes a first read port, the first read port having a first beta ratio; and a write port, the write port having a second beta ratio that is substantially lower than the first beta ratio. A static random access memory (SRAM) array includes a plurality of SRAM cells, an SRAM cell including a first read port, the first read port having a first beta ratio; and a write port, the write port having a second beta ratio that is substantially lower than the first beta ratio. | 03-31-2011 |
20110298500 | SINGLE CLOCK DYNAMIC COMPARE CIRCUIT - A compare circuit for comparing a first data word with a second data word includes a plurality of sub-circuits, each having a two-bit static compare stage and a dynamic complex logic stage; a dynamic compare node responsive to respective outputs of the sub-circuits; and an output latch that captures a comparison result in accordance with a logic state of the dynamic compare node. In an exemplary embodiment, a local clock generator provides a single controlling clock signal for clocking the output latch, precharging of the dynamic compare node, and clocking of the dynamic complex logic stage of the sub-circuits. | 12-08-2011 |
20110304370 | PROGRAMMABLE CONTROL CLOCK CIRCUIT INCLUDING SCAN MODE - A programmable clock control circuit includes a base block configured to control operation of the programmable clock control circuit and a chop block configured to control the width of an output clock signal of the programmable clock control circuit. The circuit also includes a pulse width variation block providing a pulse width variation output to the base block, the base block output being variable to provide at least three different output pulse widths. The circuit also includes a launch clock delay block coupled to delay the output of the base block and a scan clock delay block to delay the output pulse and a selector that causes either the scan clock delay block or the launch clock delay block to be active based on a value of a scan gate signal. | 12-15-2011 |
20110310680 | Interleave Memory Array Arrangement - A memory array includes a plurality of memory cells, wherein each cell of the plurality of memory cells is defined by a row and a column, wherein each row includes a unique identifying address, and wherein each column is associated with one of two sets, the columns arranged such that a column associated with a first set is adjacent to a column of a second set. | 12-22-2011 |
20110317478 | Method and Circuit Arrangement for Performing a Write Through Operation, and SRAM Array With Write Through Capability - An improved method for performing a write through operation during a write operation of a SRAM cell ( | 12-29-2011 |
20120008379 | GLOBAL BIT LINE RESTORE BY MOST SIGNIFICANT BIT OF AN ADDRESS LINE - An SRAM circuitry having SRAM cells for storing at least one data word of a length of at least one bit is provided. Each bit of the data words is stored in an assigned SRAM cell, wherein the SRAM circuitry comprises address lines for addressing the at least one data word, a decoding unit for decoding the address signals on the address lines to generate a word line signals on a word line per addressed word, a local bit line to be coupled to SRAM cells of different data words with different addresses, a global bit line to be coupled to the local bit line, and a global bit line restore unit for pre-charging the global bit line. The global bit line restore unit is configured for being triggered by a trigger signal based on the address signal of one of the decoded address lines. | 01-12-2012 |
20140078835 | HIGH FREQUENCY MEMORY - Embodiments of the disclosure include a high frequency write through memory device including a plurality of memory cells and a plurality of local evaluation circuits. Each of the plurality of local evaluation circuits are coupled to at least one of the plurality of memory cells and are configured to prevent data stored in the coupled memory cells from being written to a latch node during a write through operation. | 03-20-2014 |