Patent application number | Description | Published |
20120316438 | PORTABLE ULTRASONIC DIAGNOSTIC DEVICE - A small-sized ultrasonic diagnostic device is provided which is capable of taking various storage positions, and good in usability. The portable ultrasonic diagnostic device includes a main body | 12-13-2012 |
20130184564 | MAGNETIC RESONANCE IMAGING DEVICE - The magnetic resonance imaging device of the present invention includes a gantry and a bed part comprising a top panel, the gantry comprises a circumferential panel covering outer circumference of a tunnel-shaped static magnetic field space, and a front panel having an opening serving as entrance of a bore for the static magnetic field space, this front panel comprises an arc-shaped outer panel extending from an upper part of the opening serving as entrance of the bore to the ground plane via both sides of the opening, and an inner panel disposed inside the outer panel, a portion connecting the outer panel and the inner panel constitutes a top surface protruding forwardly, and the inner panel is formed in a recessed shape with a concave curved surface extending from the top surface to the opening serving as entrance of the bore. | 07-18-2013 |
20140024936 | PORTABLE ULTRASOUND SYSTEM - The present invention provides a portable ultrasound system being superior in operability and design properties, and being allowed to take various storage postures fitting to the volume of a storage place. The keyboard unit | 01-23-2014 |
20140117635 | CART FOR PORTABLE ULTRASONIC DIAGNOSTIC DEVICE AND ULTRASONIC DIAGNOSTIC UNIT - A cart is provided for mounting a portable ultrasonic diagnostic device, the cart being small in size and having high operability, and the portable ultrasonic diagnostic device is opened and used in the state of being kept mounted on the cart. The cart has a top board | 05-01-2014 |
Patent application number | Description | Published |
20110319676 | PROCESS FOR PRODUCING 2,3,3,3-TETRAFLUOROPROPENE - The object is to provide a process whereby it is possible to produce 2,3,3,3-tetrafluoropropene at a high conversion ratio constantly for a long period of time. | 12-29-2011 |
20110319677 | Process for Producing 2, 3, 3, 3-Tetrafluoropropene - The object is to provide a process for producing highly pure 2,3,3,3-tetrafluoropropene, whereby formation of 3,3,3-trifluoropropene is suppressed. | 12-29-2011 |
20110319680 | PROCESS FOR PRODUCING 2, 3, 3, 3-TETRAFLUOROPROPENE - In the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf), formation of HFC-254eb as an excessively reduced product is suppressed. | 12-29-2011 |
20110319681 | PROCESS FOR PRODUCING 2,3,3,3-TETRAFLUOROPROPENE - The object is to provide a process for producing highly pure 2,3,3,3-tetrafluoropropene, whereby formation of 3,3,3-trifluoropropene as a by-product is suppressed. | 12-29-2011 |
Patent application number | Description | Published |
20090302716 | PIEZOELECTRIC DEVICE - A piezoelectric device which is a MEMS device is provided. In the device, the entire silicon layer of the SOI substrate is a p-type region. A plurality of n-type regions are formed in the silicon layer so as to be exposed to the upper surface of the silicon layer and spaced from each other. A piezoelectric film made of AlN is provided on the SOI substrate so as to contact the n-type region, and a conductor film made of aluminum is provided on the piezoelectric film. Thereby, the n-type region functions as a lower electrode and the conductor film functions as an upper electrode. | 12-10-2009 |
20110193101 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure. | 08-11-2011 |
20140014971 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a SiC layer of a first conductivity type, a SiC region of a second conductivity type, and a conductive layer of the second conductivity type. The SiC layer of the first conductivity type has a hexagonal crystal structure. The SiC region of the second conductivity type is formed in a surface of the SiC layer. The conductive layer of the second conductivity type is provided on the SiC region and is in contact with a portion of the SiC region including SiC of a cubic crystal structure. | 01-16-2014 |
20140283618 | SEMICONDUCTOR DEVICE AND STRAIN MONITOR - According to one embodiment, a semiconductor device includes a substrate, a semiconductor substrate, an insulating gate field-effect transistor, and a strain gauge unit. The semiconductor substrate is placed on the substrate and has first and second regions. The insulating gate field-effect transistor is provided in the first region of the semiconductor substrate. The strain gauge unit has a long metal resistor, a first insulating film and a second insulating film. The long metal resistor is provided inside of an upper surface of the semiconductor substrate in the second region of the semiconductor substrate. The first insulating film is provided between the semiconductor substrate and the metal resistor and extends up to the upper surface of the semiconductor substrate. The second insulating film is provided above the first insulating film across the metal resistor. | 09-25-2014 |
20140284610 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes a conductive substrate, a Schottky barrier diode, and a field-effect transistor. The Schottky barrier diode is mounted on the conductive substrate and includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the conductive substrate. The field-effect transistor is mounted on the conductive substrate and includes a source electrode, a drain electrode, and a gate electrode. The source electrode of the field-effect transistor is electrically connected to the cathode electrode of the Schottky barrier diode. The gate electrode of the field-effect transistor is electrically connected to the anode electrode of the Schottky barrier diode. | 09-25-2014 |
20140335684 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE - A manufacturing method for a semiconductor device includes implanting dopants into a silicon carbide substrate, applying a carbon-containing material on at least one surface of the silicon carbide substrate, and heating the silicon carbide substrate having the carbon-containing material applied thereon to form a carbon layer on surfaces of the silicon carbide substrate. The heating is performed in a non-oxidizing atmosphere, and is followed by another heating step for activating the dopants. | 11-13-2014 |
20150069468 | SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type or an intrinsic type. The device further includes a second semiconductor layer of the first conductivity type or the intrinsic type disposed above the first semiconductor layer. The device further includes a third semiconductor layer of a second conductivity type including a first upper portion in contact with the first semiconductor layer, a second upper portion located at a lower position than the first upper portion, a first side portion located between the first upper portion and the second upper portion, and a second side portion located at a lower position than the first side portion. | 03-12-2015 |
20150076506 | SEMICONDUCTOR DEVICE - This disclosure provides a semiconductor device which includes a GaN-based semiconductor layer having a surface with an angle of not less than 0 degree and not more than 5 degrees with respect to an m-plane or an a-plane, a first electrode provided above the surface and having a first end, and a second electrode provided above the surface to space apart from the first electrode, having a second end facing the first end, and a direction of a segment connecting an arbitrary point of the first end and an arbitrary point of the second end is different from a c-axis direction of the GaN-based semiconductor layer. | 03-19-2015 |
Patent application number | Description | Published |
20140131024 | OUTDOOR UNIT FOR AIR CONDITIONER - An outdoor unit for an air conditioner, comprising: a heat exchanger disposed inside a housing; and a bottom plate of the housing, including, a bottom plate portion, a flange formed by upwardly folding back an edge of the bottom plate portion, a drainage hole penetrating the bottom plate portion and configured to discharge water, a plurality of mounting bases protruding upwardly from the bottom plate portion and supporting a lower end of the heat exchanger by upper surfaces thereof, and a drainage conduit provided in contact with the mounting bases and inclining downward toward the drainage hole, wherein a portion of the bottom plate portion positioned between at least one of the plurality of the mounting bases and the flange includes an inclined portion which is inclined toward the drainage conduit in a longitudinal direction of the flange. | 05-15-2014 |
20140144167 | OUTDOOR UNIT OF AIR-CONDITIONING APPARATUS - A bottom plate | 05-29-2014 |
20140165640 | OUTDOOR UNIT OF AIR-CONDITIONING APPARATUS - [Object] To prevent a fastening member such as a bolt from being exposed from a bottom plate when a heater is fixed to the bottom plate using a heater fixture. | 06-19-2014 |
20150043133 | OUTDOOR UNIT OF AIR-CONDITIONING APPARATUS - A power supply panel includes an engagement portion. An electrical component box includes a hook portion that engages with the engagement portion. A temporarily fixed state in which the power supply panel is attached to the electrical component box is set when the engagement portion engages with the hook portion. | 02-12-2015 |