Patent application number | Description | Published |
20080261376 | Method of manufacturing SOI substrate - To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOI substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered. | 10-23-2008 |
20080286952 | Manufacturing method of SOI substrate and manufacturing method of semiconductor device - A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate. | 11-20-2008 |
20090072343 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPLIANCE - A high-performance semiconductor device using an SOI substrate in which a low-heat-resistance substrate is used as a base substrate. Further, a high-performance semiconductor device formed without using chemical polishing. Further, an electronic device using the semiconductor device. An insulating layer over an insulating substrate, a bonding layer over the insulating layer, and a single-crystal semiconductor layer over the bonding layer are included, and the arithmetic-mean roughness of roughness in an upper surface of the single-crystal semiconductor layer is greater than or equal to 1 nm and less than or equal to 7 nm. Alternatively, the root-mean-square roughness of the roughness may be greater than or equal to 1 nm and less than or equal to 10 nm. Alternatively, a maximum difference in height of the roughness may be greater than or equal to 5 nm and less than or equal to 250 nm. | 03-19-2009 |
20090115028 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized. | 05-07-2009 |
20100173472 | METHOD FOR MANUFACTURING SOI SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing an SOI substrate and a method for manufacturing a semiconductor device, in each of which peeling of a single crystal semiconductor layer from an end portion due to laser irradiation is suppressed, are provided. A fragile region is formed in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an accelerated ion, the single crystal semiconductor substrate is bonded to a base substrate with an insulating layer interposed therebetween, a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by splitting the single crystal semiconductor substrate at the fragile region, an end portion of the single crystal semiconductor layer is removed, and a surface of the single crystal semiconductor layer whose end portion has been removed is irradiated with a laser beam. | 07-08-2010 |
20110076837 | MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate. | 03-31-2011 |
20110136320 | METHOD OF MANUFACTURING SOI SUBSTRATE - To provide an SOI substrate with an SOI layer that can be put into practical use, even when a substrate with a low allowable temperature limit such as a glass substrate is used, and to provide a semiconductor substrate formed using such an SOI substrate. In order to bond a single-crystalline semiconductor substrate to a base substrate such as a glass substrate, a silicon oxide film formed by CVD with organic silane as a source material is used as a bonding layer, for example. Accordingly, an SOL substrate with a strong bond portion can be formed even when a substrate with an allowable temperature limit of less than or equal to 700° C. such as a glass substrate is used. A semiconductor layer separated from the single-crystalline semiconductor substrate is irradiated with a laser beam so that the surface of the semiconductor layer is planarized and the crystallinity thereof is recovered. | 06-09-2011 |
20140116614 | Method for Bonding Substrates, Method for Maufaturing Sealing Structure, and Method for Maufaturing Light-Emitting Device - An object is to improve productivity related to a laser light irradiation step in a bonding technique of substrates using glass frit. A highly airtight sealing structure or a highly airtight light-emitting device, which can be manufactured with high productivity, is provided. When a glass layer by melting glass frit or a sintered body by sintering glass frit is irradiated with laser light, in order to increase the efficiency, a light-absorbing material is attached to a surface of the glass layer. The laser light irradiation is performed on the light-absorbing material and the glass layer. The substrates are fixed with the glass layer therebetween. | 05-01-2014 |
Patent application number | Description | Published |
20080231145 | QUARTZ CRYSTAL DEVICE AND METHOD FOR SEALING THE SAME - A quartz crystal device includes a crystal resonator element and a package including a plurality of components. The plurality of components are bonded using a metal paste sealing material containing a metallic particle having an average particle size from 0.1 to 1.0 μm, an organic solvent, and a resin material in proportions of from 88 to 93 percent by weight from 5 to 15 percent by weight, and from 0.01 to 4.0 percent by weight, respectively, to hermetically seal the crystal resonator element in the package. | 09-25-2008 |
20090174291 | PACKAGE FOR ELECTRONIC COMPONENT AND PIEZOELECTRIC RESONATOR - A package for electronic component includes: a rectangular package body, a lid hermetically sealing the package body, an electrode pad provided in the package body, a mounting terminal provided at least near four corners of a bottom surface of the package body and having a bump on a mounting surface, and a plurality of coupling electrodes electrically coupling the pad to the mounting terminal. | 07-09-2009 |
20110174533 | ELECTRONIC APPARATUS, METHOD OF MANUFACTURING SUBSTRATE, AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS - An electronic apparatus includes: a substrate which has a step portion in an edge portion; an electronic component which is bonded to a surface of the substrate inward of the step portion of the substrate; and a cap member which is bonded to the step portion so as to seal the electronic component, wherein a wall surface of the step portion is formed to be inclined from the step portion toward an electronic component bonding region or to be perpendicular to the step portion. | 07-21-2011 |