Patent application number | Description | Published |
20120212959 | LIGHTING DEVICE - According to one embodiment, a lighting device includes a body section, a light source, a globe, and a heat transfer section. The light source is provided on one end portion of the body section. The light source includes a light emitting element. The globe is provided so as to cover the light source. The heat transfer section in thermal contacts with at least one of an inner surface of the globe and a heat dissipation surface on the end portion side of the body section. | 08-23-2012 |
20120218737 | LIGHTING APPARATUS - A lighting apparatus includes a base unit and a light emitting unit. The light emitting unit includes a substrate, a light emitting device and a reflective layer. The substrate is provided around a first axis which is along a direction from the base unit toward the light emitting unit. The substrate includes a portion having a tubular configuration opening downward from above. The tubular portion includes a plurality of light emission side surfaces disposed alternately around the first axis with a plurality of reflection side surfaces. The light emitting device is provided on each of the plurality of light emission side surfaces. The reflective layer is provided on each of the plurality of reflection side surfaces. The reflective layers are configured to reflect at least a portion of light emitted from the light emitting devices. | 08-30-2012 |
20130063942 | LUMINAIRE - A luminaire according to embodiments includes a body portion, a light source provided at one end portion of the body portion and having a light-emitting element, a globe provided so as to cover the light source, and a thermal transfer portion thermally joined to at least either one of the globe or a thermal radiating surface of the body portion on the end portion side. Then, an end surface of the thermal transfer portion on the side of the globe is exposed from the globe. | 03-14-2013 |
20130063957 | LIGHTING DEVICE AND MANUFACTURING METHOD THEREOF - A lighting device according to an embodiment includes a main body unit, a light source which is provided at one end portion of the main body unit, and includes a light emitting element, a globe which is provided so as to cover the light source, and a heat conducting unit whose end surface on the globe side is exposed on the outside of the globe, and which thermally bonds the globe and a heat radiating surface of the main body unit on the end portion side. The heat conducting unit includes a plate-shaped unit in which a first plate-shaped body, and a second plate-shaped body which crosses the first plate-shaped body are integrally formed. | 03-14-2013 |
20130070457 | ILLUMINATING DEVICE - According to one embodiment, the illuminating device of the embodiment has a base part and multiple light emitting elements; the illuminating device includes a supporting part, which is arranged on one end of the base part, and which at least partially encloses an internal space. The supporting part also has an outer surface exposed to the ambient atmosphere. The multiple light emitting elements are disposed on the inner surface side of the supporting part so that at least light emitting surfaces of the light emitting elements are in contact with the supporting part. | 03-21-2013 |
20140009935 | LIGHTING DEVICE - According to one embodiment, a lighting device includes a first light source, a body section and a light distribution section. The first light source includes a light emitting element. The body section includes an attachment portion on one end portion. The first light source is attached to the attachment portion. The light distribution section is provided on the end portion of the body section and injected with light radiated from the first light source. The light distribution section has a flat shape. A peripheral portion of the light distribution section in a direction orthogonal to a central axis of the lighting device protrudes from periphery of the end portion of the body section. | 01-09-2014 |
Patent application number | Description | Published |
20100021103 | WAVELENGTH BLOCKER - An object of the present invention is to provide a wavelength blocker having the function of adjusting or cutting off the light intensity of a wavelength division multiplexed (WDM) optical signal of a given wavelength. The wavelength blocker provided by the present invention has the following features. Specifically, the wavelength blocker has a structure configured to cut off light of any diffraction order other than required diffraction order, contained in an optical signal diffracted by an arrayed waveguide grating that demultiplexes a wavelength, and thus, the wavelength blocker has crosstalk characteristics or an extinction ratio superior to those of a conventional wavelength blocker and thus has optimum packaging design. Further, the wavelength blocker can become smaller in size than the conventional wavelength blocker, and enables achieving polarization independence and cost reduction. | 01-28-2010 |
20100183310 | DISPERSION COMPENSATOR - Conventional dispersion compensators were not sufficient to satisfy a demand to set a different dispersion value for each WDM wavelength in a ring-mesh type network that utilizes wavelength selective switches or the like. The devices were insufficiently reduced in size and power consumption and used with difficulty to change dispersion characteristics for each wavelength flexibly in a simple manner. A dispersion compensator of the present invention uses general-purpose optical components including a spatial light modulator for providing discrete phases to set appropriately the relationship between the focusing beam radius and the spatial light modulator pixel, thereby providing various dispersion compensation characteristics. Attention is focused on the correspondence between multiple pixels on the spatial light modulator providing discrete phases and a communication channel band, thereby allowing for changing the flexible dispersion characteristics and realizing the setting of an independent dispersion value for each WDM wavelength. | 07-22-2010 |
20100316385 | OPTICAL SIGNAL PROCESSING DEVICE - A conventional optical signal processing device had a disadvantage where the temperature dependency of the spectroscopic characteristics of a spectroscopic element causes a deteriorated performance. In order to solve the temperature dependency, there has been a method to form a plurality of grooves for dividing a core on the array waveguide of the AWG. However, this method cannot avoid an excess loss and causes a high manufacture cost. By directly controlling the modulation characteristic profile formed by an element device of a spatial light modulator, athermalization can be achieved in a simpler and low-cost manner. This consequently provides a remarkable reduction of the light coupling loss in the spatial optical system of the optical signal processing device. More accurate temperature compensation can be realized that copes with an actual behavior of the device to a temperature fluctuation, including causing factors of a complicated temperature fluctuation of the optical system. | 12-16-2010 |
20110228374 | OPTICAL SIGNAL PROCESSING DEVICE - In a conventional optical signal processing device, a confocal optical system is configured in which a focusing lens is positioned at a substantially-intermediate point of a free space optical path. Thus, the free space optical system had a long length. It has been difficult to reduce the size of the entire device. The optical signal processing device of the present invention uses a lens layout configuration different from the confocal optical system to thereby significantly reduce the length of the system. The optical signal processing device consists of the first focusing lens positioned in the close vicinity of a signal processing device, and the second focusing lens positioned in the vicinity of a dispersing element. A distance between the dispersing element and the signal processing device is approximately a focal length of the first focusing lens. Compared with the conventional technique, the length of the optical path can be halved. | 09-22-2011 |
Patent application number | Description | Published |
20120241851 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a drift layer. The device includes a base layer. The device includes a source layer selectively provided on a surface of the base layer. The device includes a gate electrode provided via a gate insulating film in a trench penetrating the source layer and the base layer to reach the drift layer. The device includes a field plate electrode provided under the gate electrode in the trench. The device includes a drain electrode electrically connected to the drift layer. The device includes a source electrode. The field plate electrode is electrically connected to the source electrode. An impurity concentration of a first conductivity type contained in the base layer is lower than an impurity concentration of the first conductivity type contained in the drift layer. And the impurity concentration of the first conductivity type contained in the drift layer is not less than 1×10 | 09-27-2012 |
20120241854 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, the semiconductor device includes a first semiconductor layer. The semiconductor device includes a plurality of base regions, the base regions are provided on a surface of the first semiconductor layer. The semiconductor device includes a source region selectively provided on each of surfaces of the base regions. The semiconductor device includes a gate electrode provided via a gate insulating film in each of a pair of trenches, each of the trenches penetrate the base regions from a surface of the source region to the first semiconductor layer. The semiconductor device includes a field plate electrode provided via a field plate insulating film in each of the pair of trenches under the gate electrode. A thickness of a part of the field plate insulating film is greater than a thickness of the gate insulating film. | 09-27-2012 |
20120241896 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a plurality of second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type and a first electrode. The second regions are provided separately on a first major surface side of the first layer. The third region is provided on the first major surface side of the first layer so as to surround the second regions. The first electrode is provided on the first layer and the second regions. The first layer has a first portion and a second portion. The second portion has a lower resistivity than the first portion. The second portion is provided between the second regions and between the first portion and the first major surface and is provided outside the third region and between the first portion and the first major surface. | 09-27-2012 |
20120241898 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a first electrode, a second semiconductor region of the first conductivity type and a second electrode. The first semiconductor region includes a first portion including a first major surface and a second portion extending in a first direction perpendicular to the first major surface on the first major surface. The first electrode includes a third portion provided to face the second portion and is provided to be separated from the first semiconductor region. The second semiconductor region is provided between the second and third portions, includes a first concentration region having a lower impurity concentration than the first semiconductor region and forms a Schottky junction with the third portion. The second electrode is provided on an opposite side of the first major surface and in conduction with the first portion. | 09-27-2012 |
Patent application number | Description | Published |
20080243437 | TECHNIQUE FOR DETECTING ANOMALY IN OBSERVATION TARGET - A system, method, and computer program product allowing an information processing apparatus to function as a system for detecting an anomaly in an observation target on the basis of time series data. The system includes a first generation unit, a second generation unit, a singular vector computation unit, a matrix product computation unit, an element computation unit, an eigenvector computation unit and a change degree computation unit. The change degree computation unit computes the degree of change in the observation target from the reference periods to the target periods for anomaly detection, on the basis of a linear combination of the inner products between each of the eigenvectors and a singular vector, and then outputs the computed degree as a score indicating an anomaly in the observation target. | 10-02-2008 |
20120143814 | LOCATION ESTIMATION SYSTEM, METHOD AND PROGRAM - Location estimation systems, methods, and non-transitory computer program products. The system includes: storage means provided in the computer, means for storing the vector datasets in the storage means of the computer, means for calculating the similarity between the vector dataset without any location label and each neighboring vector dataset with a location label, by using any one of a q-norm where 0≦q≦1 and an exponential attenuation function, and means for estimating the location label of the vector data without any location label from the calculated similarities. | 06-07-2012 |
20130274899 | METHOD, COMPUTER PROGRAM, AND COMPUTER FOR DETERMINING SYSTEM SITUATION - A method applied to a computer that determines a situation of a system includes the steps of: receiving measurement data from each of a plurality of measurement targets in the system; computing a plurality of sets of anomaly values based on the measurement data and a predetermined computation algorithm according to a plurality of classifications corresponding to a plurality of properties of each measurement target; and determining the situation of the system based on the sets of anomaly values and a predetermined determination algorithm. | 10-17-2013 |
20150036930 | DISCRIMINATING SYNONYMOUS EXPRESSIONS USING IMAGES - A method for identifying synonymous expressions includes determining synonymous expression candidates for a target expression. A plurality of target images related to the target expression and a plurality of candidate images related to each of the synonymous expression candidates are identified. Features extracted from the plurality of target images are compared with features extracted from the plurality of candidate images using a processor to identify a synonymous expression of the target expression. | 02-05-2015 |
Patent application number | Description | Published |
20130234158 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 09-12-2013 |
20130240904 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, an insulating film, a control electrode, a first electrode, and a second electrode. The first semiconductor region includes silicon carbide, and has a first portion. The second semiconductor region is provided on the first semiconductor region, and includes silicon carbide. The third semiconductor region and the fourth semiconductor region are provided on the second semiconductor region, and includes silicon carbide. The electrode is provided on the film. The second semiconductor region has a first region and a second region. The first region contacts with the third semiconductor region and the fourth semiconductor region. The second region contacts with the first portion. The impurity concentration of the first region is higher than an impurity concentration of the second region. | 09-19-2013 |
20130248880 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, and a fourth semiconductor region, a control electrode, a floating electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench formed in the fourth, the third, and the second region. The floating electrode is provided between the control electrode and a bottom surface of the trench. The insulating film is provided between the trench and the control electrode, between the trench and the floating electrode, and between the control electrode and the floating electrode. | 09-26-2013 |
20130248881 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench. The trench is formed in the fourth, the third, and the second semiconductor region. The insulating film is provided between a side surface of the trench and the control electrode. The insulating film contains a high-dielectric constant region. The high-dielectric constant region contacts with at least the third semiconductor region. The high-dielectric constant region has a higher dielectric constant than a dielectric constant of silicon oxide. | 09-26-2013 |
20140147997 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth, and a fifth semiconductor region, an insulating film, a control electrode, and a first and a second electrode. The first, the second, the third, the fourth and the fifth semiconductor region include silicon carbide. The first semiconductor region has a first impurity concentration, and has a first portion. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the second semiconductor region. The fourth semiconductor region is provided between the first portion and the second semiconductor region. The fourth semiconductor region is provided between the first portion and the third semiconductor region. The fifth semiconductor region includes a first region provided between the first portion and the second semiconductor region, and has a second impurity concentration higher than the first impurity concentration. | 05-29-2014 |
20150087124 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench. The trench is formed in the fourth, the third, and the second semiconductor region. The insulating film is provided between a side surface of the trench and the control electrode. The insulating film contains a high-dielectric constant region. The high-dielectric constant region contacts with at least the third semiconductor region. The high-dielectric constant region has a higher dielectric constant than a dielectric constant of silicon oxide. | 03-26-2015 |