Patent application number | Description | Published |
20090054277 | SLIDING MEMBER AND PRODUCTION PROCESS THEREOF - There is provided a sliding member including a base body and a hard carbon coating formed on the base body to define a sliding surface for sliding contact with an opposing member under lubrication according to one embodiment of the present invention. The hard carbon coating has an outermost surface portion lower in hydrogen content than a remaining portion thereof, or an outermost coating layer lower in hydrogen content than at least one other coating layer. | 02-26-2009 |
20100026813 | Video monitoring involving embedding a video characteristic in audio of a video/audio signal - A first video characteristic value is determined from a video/audio signal. The first video characteristic value is embedded in an audio portion of the video/audio signal and the video/audio signal is transmitted from a transmission source to a transmission destination. At the destination, the first video characteristic value is recovered and the received video/audio signal is used to determine a second video characteristic value. The recovered first video characteristic value is used to verify or check the second video characteristic value. By comparing the first and second video characteristic values, a determination is made about degradation of the received video/audio signal. In one example, a determination is made as to whether a lip-sync error has likely occurred. In another example, the audio-transmitted first video characteristic is used for copyright protection purposes. | 02-04-2010 |
20110028361 | LOW-FRICTION SLIDING MECHANISM - A low-friction sliding mechanism includes first and second sliding members having respective sliding surfaces slidable relative to each other and a lubricant applied to the sliding surfaces of the first and second sliding members. At least the sliding surface of the first sliding member is made of a diamond-like carbon material, and at least the sliding surface of the second sliding member is made of either an aluminum-based alloy material, a magnesium-based alloy material or a diamond-like carbon material. The lubricant contains a base oil and at least one of an ashless fatty-ester friction modifier and an ashless aliphatic-amine friction modifier. | 02-03-2011 |
Patent application number | Description | Published |
20090309496 | PLASMA DISPLAY PANEL AND ITS MANUFACTURING METHOD - A PDP and a manufacturing method for the PDP are provided, the PDP being capable of suppressing discharge delay due to improved discharge properties of a protective layer, and exhibiting superior image display performance despite having a high-definition cell structure. A magnesium oxide powder layer ( | 12-17-2009 |
20110148284 | LIGHT-EMITTING DIODE ELEMENT AND METHOD FOR FABRICATING THE SAME - A substrate for semiconductor device includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate and an AlN layer formed on the amorphous carbon layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate. | 06-23-2011 |
20110174626 | SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate. | 07-21-2011 |
20110203651 | SOLAR CELL AND METHOD FOR FABRICATING THE SAME - A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate. | 08-25-2011 |
20110298006 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light emitting device includes a nitride semiconductor layer including a first cladding layer, an active layer, and a second cladding layer, and a current blocking layer configured to selectively inject a current into the active layer. The second cladding layer has a stripe-shaped ridge portion. The current blocking layer is formed in regions on both sides of the ridge portion, and is made of zinc oxide having a crystalline structure. | 12-08-2011 |
20120043524 | LIGHT-EMITTING DIODE - An light emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well layer, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The n-side electrode is electrically connected to the n-type nitride semiconductor layer. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film. The light-emitting diode further comprises a plurality of single-crystalline ZnO rods formed on the n-type single-crystalline ZnO transparent film. The respective lower portions of the single-crystalline ZnO rods have a shape of an inverted taper, which sharpens from the single-crystalline n-type ZnO transparent film toward the n-type nitride semiconductor layer. | 02-23-2012 |
20120104354 | LIGHT-EMITTING DIODE - A light-emitting diode includes an n-type nitride semiconductor layer, a multiple quantum well, a p-type nitride semiconductor layer, a window electrode layer, a p-side electrode, and an n-side electrode, which are stacked in this order. The window electrode layer comprises an n-type single-crystalline ITO transparent film and an n-type single-crystalline ZnO transparent film. The p-type nitride semiconductor layer is in contact with the n-type single-crystalline ITO transparent film, the n-type single-crystalline ITO transparent film is in contact with the n-type single-crystalline ZnO transparent film, and the p-side electrode is in connected with the n-type single-crystalline ZnO transparent film. The n-type single-crystalline ITO transparent film contains Ga, a molar ratio of Ga/(In+Ga) being not less than 0.08 and not more than 0.5. Thickness of the n-type single-crystalline ITO transparent film is not less than 1.1 nm and not more than 55 nm. | 05-03-2012 |
20120211073 | SOLAR CELL - A method of fabricating a solar cell includes steps of: forming an amorphous carbon layer, an AlN layer and a first n-type nitride semiconductor layer on the surface of the graphite substrate, forming a mask layer with a plurality of openings on the first n-type nitride semiconductor layer; forming a plurality of second n-type nitride semiconductor layers on the portions of the first n-type nitride semiconductor layer which are exposed by the plurality of openings; forming a plurality of light absorption layers on the plurality of second n-type nitride semiconductor layers; forming a plurality of p-side nitride semiconductor layers on the plurality of the light absorption layers; forming a p-side electrode; and forming an n-side electrode. | 08-23-2012 |
20120273038 | SOLAR CELL AND METHOD FOR FABRICATING THE SAME - A solar cell includes a graphite substrate, an amorphous carbon layer having a thickness of not less than 20 nm and not more than 60 nm formed on the graphite substrate, an AlN layer formed on the amorphous carbon layer, a n-type nitride semiconductor layer formed on the AlN layer; a light-absorption layer including a nitride semiconductor layer formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the light-absorption layer; a p-side electrode electrically connected to the p-type nitride semiconductor layer; and an n-side electrode electrically connected to the n-type nitride semiconductor layer. The amorphous carbon layer is obtained by oxidizing the surface of the graphite substrate. | 11-01-2012 |
20120305401 | SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A single crystal of zinc oxide which is c-axis oriented with use of electrolytic deposition method is formed on an amorphous carbon layer, after the amorphous carbon layer is provided on an inexpensive graphite substrate. The amorphous carbon layer is provided by oxidizing the surface of the graphite substrate. | 12-06-2012 |
20140071683 | WAVELENGTH CONVERSION ELEMENT, METHOD OF MANUFACTURING THE SAME, AND LED ELEMENT AND SEMICONDUCTOR LASER LIGHT EMITTING DEVICE USING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation. | 03-13-2014 |
20140072812 | WAVELENGTH CONVERSION ELEMENT INCLUDING PHOSPHOR PARTICLES, AND LED ELEMENT AND SEMICONDUCTOR LASER LIGHT EMITTING DEVICE USING WAVELENGTH CONVERSION ELEMENT - A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide. | 03-13-2014 |
20140353702 | WAVELENGTH CONVERSION ELEMENT, LIGHT EMITTING DEVICE INCLUDING WAVELENGTH CONVERSION ELEMENT, AND VEHICLE INCLUDING LIGHT EMITTING DEVICE - A wavelength conversion element includes a phosphor layer including phosphor particles configured to be excited by light from a light source and a matrix located among the phosphor particles; and a column-shaped structural body including at least two kinds of column-shaped bodies periodically arranged and in contact with the phosphor layer. The column-shaped bodies have different heights and/or different thicknesses. The column-shaped structural body is a photonic crystal. | 12-04-2014 |