Patent application number | Description | Published |
20080258271 | Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films - A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials. | 10-23-2008 |
20090014777 | Flash Memory Devices and Methods of Manufacturing the Same - Provided are flash memory devices. Embodiments of such devices may include a tunnel insulator formed on a substrate, a charge-storage layer formed on the tunnel insulator, a lower buffer layer formed on the charge-storage layer, a blocking layer formed on the lower buffer layer, and a first gate electrode formed on the blocking layer. Such devices may include second gate electrode formed on the first gate electrode, such that the lower buffer layer includes a silicon-free insulator, the blocking layer includes oxides or ternary lanthanum compounds, and | 01-15-2009 |
20090191717 | ATOMIC LAYER DEPOSITION APPARATUS - An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas. | 07-30-2009 |
20090309187 | Semiconductor Device and Method of Fabricating the Same - Provided is a semiconductor device including a multi-layer dielectric structure and a method of fabricating the semiconductor device. According to one example embodiment, the semiconductor device includes a capacitor comprising: first and second electrodes facing each other; at least one first dielectric layer that is disposed between the first and second electrodes, the at least one first dielectric layer comprising a first high-k dielectric layer doped with silicon; and at least one second dielectric layer that is disposed between the at least one first dielectric layer and any of the first and second electrodes, the at least one second dielectric layer having a higher crystallization temperature than that of the first dielectric layer. | 12-17-2009 |
20100134950 | CAPACITOR - A capacitor includes a substrate, a plurality of first storage electrodes, a plurality of second storage electrodes, a first supporting layer pattern, a dielectric layer and a plate electrode. A plurality of contact pads is formed I the substrate. The first storage electrodes are arranged along lines parallel with a first direction and electrically connected to the contact pads, respectively. The second storage electrodes are respectively stacked on the first storage electrodes. The first supporting layer pattern extends in a direction parallel with the first direction between adjacent second storage electrodes and makes contact with the adjacent second storage electrodes to support the second storage electrodes. The dielectric layer is formed on the first and second storage electrodes. The plate electrode is formed on the dielectric layer. | 06-03-2010 |
20100190320 | METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME - Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate. | 07-29-2010 |
20130178070 | ATOMIC LAYER DEPOSITION APPARATUS - An atomic layer deposition apparatus and an atomic layer deposition method increase productivity. The atomic layer deposition apparatus includes a reaction chamber, a heater for supporting a plurality of semiconductor substrates with a given interval within the reaction chamber and to heat the plurality of semiconductor substrates and a plurality of injectors respectively positioned within the reaction chamber and corresponding to the plurality of semiconductor substrates supported by the heater. The plurality of injectors are individually swept above the plurality of semiconductor substrates to spray reaction gas. | 07-11-2013 |