Patent application number | Description | Published |
20080250859 | ACCELERATION SENSOR - An acceleration sensor of the present invention is a heat sensing type acceleration sensor, and includes a heating chip formed with a heating element on a surface thereof, and a sensor chip formed with a thermocouple element on a surface thereof and disposed so that the surface faces the surface of the heating chip. | 10-16-2008 |
20090045474 | MEMS sensor and production method of MEMS sensor - The MEMS sensor includes a substrate, a lower thin film, opposed to a surface of the substrate at an interval, having a plurality of lower through-holes formed to pass through the lower thin film in the thickness direction thereof, an upper thin film, opposed to the lower thin film at an interval on the side opposite to the substrate, having a plurality of upper through-holes formed to pass through the upper thin film in the thickness direction thereof, and a plurality of protrusions irregularly provided on a region of the surface of the substrate opposed to the lower thin film. | 02-19-2009 |
20090047479 | Mems sensor and production method of mems sensor - An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film. | 02-19-2009 |
20090050989 | Semiconductor device - A semiconductor device of the present invention includes a semiconductor substrate, a semiconductor element formed in the semiconductor substrate, a surface layer formed on the semiconductor substrate, and a capacitance type sensor formed on the surface layer. The surface layer has a planar portion whose surface is planar. The capacitance type sensor includes a lower thin film parallelly opposed to the surface of the planar portion and an upper thin film opposed to the lower thin film at a prescribed interval on the side opposite to the surface layer. | 02-26-2009 |
20090095081 | Semiconductor device - A semiconductor device according to the present invention includes a semiconductor substrate and an MEMS sensor provided on the semiconductor substrate. The MEMS sensor includes a vibratory first electrode and a plurality of second electrodes opposed to the first electrode at an interval. | 04-16-2009 |
20090107239 | Semiconductor device - A semiconductor device according to the present invention includes a semiconductor substrate and an MEMS sensor provided on the semiconductor substrate. The MEMS sensor includes a first electrode having a plurality of first interdigital portions aligned in a prescribed direction X at an interval, a second electrode, having a plurality of second interdigital portions aligned in the direction X at an interval, so arranged that the second interdigital portions are opposed to the first interdigital portions in the direction X respectively, a third electrode having a plurality of third interdigital portions aligned in a direction Y orthogonal the direction X at an interval, a fourth electrode, having a plurality of fourth interdigital portions aligned in the direction Y at an interval, so arranged that the fourth interdigital portions are opposed to the third interdigital portions in the direction Y respectively, and a fifth electrode opposed to the first electrode, the second electrode, the third electrode and the fourth electrode in a direction Z orthogonal to the direction X and the direction Y. | 04-30-2009 |
20090278216 | MEMS sensor - An MEMS sensor is described. The MEMS sensor may include a substrate, a lower thin film provided in contact with a surface of the substrate, and an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate. | 11-12-2009 |
20090309173 | MEMS SENSOR - The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): | 12-17-2009 |
20100064808 | Acceleration sensor and method of manufacturing acceleration sensor - The acceleration sensor according to the present invention includes a sensor chip having a movable portion operating in response to a change in a physical quantity and a silicon chip arranged to be opposed to a first side of the sensor chip and bonded to the sensor chip, while the sensor chip is provided with a penetrating portion penetrating the sensor chip in the thickness direction so that the first side is visually recognizable from a second side of the sensor chip, and the silicon chip is provided with an alignment mark on a portion opposed to the penetrating portion. | 03-18-2010 |
20100065930 | Method of etching sacrificial layer, method of manufacturing MEMS device, MEMS device and MEMS sensor - The method of etching a sacrificial layer according to the present invention includes the steps of forming a sacrificial layer having a protrusive shape on a base layer, forming a covering film covering the sacrificial layer, forming a protective film made of a material whose etching selection ratio to the sacrificial layer is greater than the etching selection ratio of the covering film to the sacrificial layer on a portion of the covering film opposed to the side surface of the sacrificial layer, and etching the sacrificial layer after the formation of the protective film. | 03-18-2010 |
20100090297 | Pressure sensor and method for manufacturing the pressure sensor - A pressure sensor of the present invention includes a lower substrate which has an insulating layer having a through-hole penetrating from one side to the other side, and an active layer formed to have a uniform thickness on the insulating layer and having a portion facing the through-hole as an oscillating portion capable of oscillating in a direction opposing the through-hole; a lower electrode formed on the oscillating portion; an upper substrate arranged opposite to the active layer and having a recess at a portion opposed to the oscillating portion; and an upper electrode formed on the recess. | 04-15-2010 |
20100096714 | METHOD OF MANUFACTURING MEMS SENSOR AND MEMS SENSOR - A method of manufacturing an MEMS sensor according to the present invention includes the steps of: forming a first sacrificial layer on one surface of a substrate; forming a lower electrode on the first sacrificial layer; forming a second sacrificial layer made of a metallic material on the first sacrificial layer to cover the lower electrode; forming an upper electrode made of a metallic material on the second sacrificial layer; forming a protective film made of a nonmetallic material on the substrate to collectively cover the first sacrificial layer, the second sacrificial layer and the upper electrode; and removing at least the second sacrificial layer by forming a through-hole in the protective film and supplying an etchant to the inner side of the protective film through the through-hole. | 04-22-2010 |
20100101324 | MEMS SENSOR - The MEMS sensor according to the present invention includes: a substrate; a supporting portion provided on one surface of the substrate; a beam, supported by the supporting portion, having a movable portion opposed to the surface of the substrate through a space; a resistive conductor formed on at least the movable portion of the beam; a weight arranged on a side of the beam opposite to the substrate; and a coupling portion, made of a metallic material, coupling the beam and the weight with each other. | 04-29-2010 |
20100116057 | MEMS SENSOR AND METHOD OF MANUFACTURING THE SAME - An MEMS (Micro Electro Mechanical Systems) sensor includes a base layer and a deformation portion provided on the base layer at an interval from the base layer and deformed by external force. The deformation portion is made of an organic material. | 05-13-2010 |
20100117124 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes: a semiconductor substrate; a source region formed in a top layer portion of the semiconductor substrate; a drain region formed in the top layer portion of the semiconductor substrate and spaced apart from the source region; a gate electrode formed on the semiconductor substrate and opposing to an interval between the source region and the drain region; a wiring formed on the semiconductor substrate and connected to the source region, the drain region, or the gate electrode; and a MEMS sensor disposed on the semiconductor substrate. The MEMS sensor includes: a thin film first electrode made of the same material as the gate electrode and formed in the same layer as the gate electrode; and a second electrode made of the same material as the wiring, formed in the same layer as the wiring, and spaced apart from the first electrode at a side opposite to the semiconductor substrate side of the first electrode. | 05-13-2010 |
20100193886 | MEMS SENSOR, AND MEMS SENSOR MANUFACTURING METHOD - MEMS sensor including substrate, lower thin film confronting one face of the substrate with a space therebetween and having lower through holes extending in the thickness direction thereof, and upper thin film arranged on the opposite side of the substrate confronting the lower thin film with a space therebetween and having upper through holes extending in the thickness direction. A MEMS sensor manufacturing method includes forming a first sacrificing layer on one face of a substrate, forming a lower thin film on the first sacrificing layer with lower through holes individually extending in the thickness direction, forming a second sacrificing layer on the lower thin film, forming an upper thin film on the second sacrificing layer with upper through holes individually extending in the thickness direction, removing the second sacrificing layer through the upper through holes by etching, and removing the first sacrificing layer through the upper and lower through holes by etching. | 08-05-2010 |
20100194407 | MEMS sensor - The MEMS sensor according to the present invention includes: a substrate made of a silicon material, having a recess dug down from the surface thereof; a fixed electrode made of a metallic material, arranged in the recess and fixed to the substrate; and a movable electrode made of a metallic material, arranged in the recess to be opposed to the fixed electrode and provided to be displaceable with respect to the fixed electrode. | 08-05-2010 |
20100237497 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - There are included a semiconductor substrate provided with a desirable element region, an electrode pad formed to come in contact with a surface of the semiconductor substrate or a wiring layer provided on the surface of the semiconductor substrate, a bonding pad formed on a surface of the electrode pad through an intermediate layer, and a resin insulating film for covering a peripheral edge of the bonding pad such that an interface of the bonding pad and the intermediate layer is not exposed to a side wall. | 09-23-2010 |
20100243057 | SEMICONDUCTOR DEVICE, PHOTOELECTRIC CONVERTER AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERTER - The semiconductor device according to the present invention includes: a semiconductor substrate; an integrated circuit formed on the semiconductor substrate; and a photoelectric converter, stacked on the integrated circuit, having a light absorbing layer made of a compound semiconductor having a chalcopyrite structure. | 09-30-2010 |
20110006382 | MEMS sensor, silicon microphone, and pressure sensor - An MEMS sensor includes: a semiconductor substrate having an opening extending therethrough; a vibration diaphragm opposed to the opening in an opposing direction and capable of vibrating in the opposing direction; and a piezoelectric element or a strain gage provided in association with the vibration diaphragm. | 01-13-2011 |
20110012212 | MEMS SENSOR AND PRODUCTION METHOD OF MEMS SENSOR - An MEMS sensor of the present invention includes a substrate, a lower thin film provided on a surface of the substrate, an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate, and a wall portion surrounding the lower thin film and the upper thin film and protruding on the side opposite to the lower thin film with respect to the upper thin film. | 01-20-2011 |
20110037813 | INKJET PRINTER HEAD - An inkjet printer head includes: a semiconductor substrate; a vibration diaphragm provided on the semiconductor substrate and capable of vibrating in an opposing direction in which the vibration diaphragm is opposed to the semiconductor substrate; a piezoelectric element provided on the vibration diaphragm; a pressure chamber provided on a side of the vibration diaphragm adjacent to the semiconductor substrate as facing the vibration diaphragm, the pressure chamber being filled with an ink; and a nozzle extending through the vibration diaphragm and communicating with the pressure chamber for ejecting the ink supplied from the pressure chamber. | 02-17-2011 |
20110057274 | ACCELERATION SENSOR, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The acceleration sensor according to the present invention includes a circuit chip having a prescribed circuit built into a front surface thereof; a sensor chip bonded to the front surface of the circuit chip; and a resin package for sealing the circuit chip and the sensor chip, while the sensor chip includes: a membrane arranged to oppose to the front surface of the circuit chip and having a plurality of openings; a piezoresistor formed on a surface of the membrane opposed to the circuit chip; a support section provided on a side opposite to the circuit chip with respect to the membrane and supporting a peripheral edge portion of the membrane; and a weight section provided on the side opposite to the circuit chip with respect to the membrane and integrally held on a central portion of the membrane. | 03-10-2011 |
20110104845 | PRODUCTION METHOD OF MEMS SENSOR - Production method for a MEMS sensor including a substrate, a lower thin film, opposed to a surface of the substrate at an interval, having a plurality of lower through-holes formed to pass through the lower thin film in the thickness direction thereof, an upper thin film, opposed to the lower thin film at an interval on the side opposite to the substrate, having a plurality of upper through-holes formed to pass through the upper thin film in the thickness direction thereof, and a plurality of protrusions irregularly provided on a region of the surface of the substrate opposed to the lower thin film. | 05-05-2011 |
20110108933 | MEMS DEVICE - A MEMS device according to the present invention includes a movable member, a supporting member supporting the movable member, an opposing member opposed to the movable member, and a wall member formed to an annular shape surrounding the movable member and connected to the supporting member and the opposing member. | 05-12-2011 |
20110127624 | MEMS SENSOR - An MEMS sensor is described. The MEMS sensor may include a substrate, a lower thin film provided in contact with a surface of the substrate, and an upper thin film opposed to the lower thin film at an interval on the side opposite to the substrate. | 06-02-2011 |
20110175637 | METHOD FOR MANUFACTURING PROBE CARD, PROBE CARD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING PROBE - Provided is a method for manufacturing a probe card which inspects electrical characteristics of a plurality of semiconductor devices in batch. The method includes: a step of forming a plurality of probes, which are to be brought into contact with external terminals of the semiconductor devices, on one side of a board which forms the base body of the probe card; a step of forming on the board, by photolithography and etching, a plurality of through-holes which reach the probes from the other side of the board; a step of forming, in the through-holes, through electrodes to be conductively connected with the probes, respectively; and a step of forming wiring, which is conductively connected with the through electrodes, on the other side of the board. | 07-21-2011 |
20110198750 | SEMICONDUCTOR CHIP AND METHOD FOR MANUFACTURING SAME, ELECTRODE STRUCTURE OF SEMICONDUCTOR CHIP AND METHOD FOR FORMING SAME, AND SEMICONDUCTOR DEVICE - A semiconductor chip according to the present invention includes a semiconductor substrate, a bump of a metal projecting from a surface of the semiconductor substrate, and an alloy film covering the entire surface of the bump, the alloy film being composed of an alloy of the metal of the bump and a second metal. | 08-18-2011 |
20110210414 | Infrared sensor - An infrared sensor according to the present invention includes a semiconductor substrate, a thin-film pyroelectric element made of lead titanate zirconate and disposed on the semiconductor substrate, a coating film coating the pyroelectric element and having a topmost surface that forms a light receiving surface for infrared rays, and a cavity formed to a shape dug in from a top surface of the semiconductor substrate at a portion opposite to the pyroelectric element and thermally isolates the pyroelectric element from the semiconductor substrate. | 09-01-2011 |
20110221014 | PRESSURE SENSOR AND METHOD FOR MANUFACTURING THE PRESSURE SENSOR - A pressure sensor of the present invention includes a substrate inside which a reference pressure chamber is formed, a closing body filled in a through-hole formed in the substrate such that the closing body penetrates through a portion between the surface of the substrate and the reference pressure chamber, and hermetically closes the reference pressure chamber, and a strain gauge provided inside the substrate between the surface of the substrate and the reference pressure chamber, and the electric resistance thereof being capable of changing by strain deformation of the substrate. | 09-15-2011 |
20110227177 | MEMS sensor - The MEMS sensor according to the present invention includes a diaphragm. In the diaphragm, an angle formed by two straight lines connecting supporting portions and the center of a main portion with one another respectively is set to satisfy the relation of the following formula (1): | 09-22-2011 |
20120193733 | CAPACITANCE TYPE MEMS SENSOR - A capacitance type MEMS sensor has a first electrode portion and a second electrode portion facing each other. The sensor includes a semiconductor substrate having a recess dug in a thickness direction of the semiconductor substrate, the recess having sidewalls, one of which serves as the first electrode portion. The sensor further includes a diaphragm serving as the second electrode portion, the diaphragm arranged within the recess to face the first electrode portion in a posture extending along a depth direction of the recess, the diaphragm having a lower edge spaced apart from the bottom surface of the recess, and is made of the same material as the semiconductor substrate. The sensor further includes an insulating film arranged to join the diaphragm to the semiconductor substrate. | 08-02-2012 |
20120250129 | MEMS MIRROR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A MEMS mirror device includes a semiconductor substrate, a mirror provided on the semiconductor substrate, a first cavity, a second cavity, and a frame portion to define the first cavity and the second cavity. The semiconductor substrate further includes a swing portion formed just above the first cavity to support the mirror, a straight beam provided just above the first cavity to extend between the frame portion and the swing portion, a comb-teeth-like fixed electrode, and a comb-teeth-like movable electrode, the movable electrode meshing with the fixed electrode with a gap left therebetween, the swing portion configured to swing about the beam as a swing axis in response to movement of the movable electrode. | 10-04-2012 |
20130193534 | CAPACITIVE PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME - A capacitive pressure sensor includes: a semiconductor substrate having a reference pressure chamber formed therein; a diaphragm which is formed in a front surface of the semiconductor substrate and has a ring-like peripheral through hole penetrating between the front surface of the semiconductor substrate and the reference pressure chamber and defining an upper electrode and a plurality of central through holes; a peripheral insulating layer which fills the peripheral through hole and electrically isolates the upper electrode from other portions of the semiconductor substrate; and a central insulating layer which fills the central through holes. | 08-01-2013 |
20130313660 | CAPACITANCE TYPE SENSOR - A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth. | 11-28-2013 |
20130327149 | CAPACITIVE PRESSURE SENSOR, MANUFACTURING METHOD THEREOF, AND PRESSURE SENSOR PACKAGE - A capacitive pressure sensor includes a semiconductor substrate, a first insulating portion configured to define a sensor region, a reference pressure chamber configured to divide a lower portion of the sensor region in a direction, a second insulating portion configured to divide a surface portion of the sensor region above the reference pressure chamber in the direction, and a trench configured to divide the sensor region in the direction. The sensor region is divided into at least three semiconductor parts by the reference pressure chamber, the second insulating portion, and the trench. | 12-12-2013 |
20140071207 | INKJET PRINTER HEAD - An inkjet printer head includes: a semiconductor substrate; a vibration diaphragm provided on the semiconductor substrate and capable of vibrating in an opposing direction in which the vibration diaphragm is opposed to the semiconductor substrate; a piezoelectric element provided on the vibration diaphragm; a pressure chamber provided on a side of the vibration diaphragm adjacent to the semiconductor substrate as facing the vibration diaphragm, the pressure chamber being filled with an ink; and a nozzle extending through the vibration diaphragm and communicating with the pressure chamber for ejecting the ink supplied from the pressure chamber. | 03-13-2014 |
20140322854 | METHOD FOR MANUFACTURING A MEMS SENSOR - A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth. | 10-30-2014 |