Patent application number | Description | Published |
20090308453 | HETEROJUNCTION WITH INTRINSICALLY AMORPHOUS INTERFACE - The invention relates to a structure ( | 12-17-2009 |
20100047473 | METHOD OF FORMING A FILM BY DEPOSITION FROM A PLASMA - A method is described of depositing film of an amorphous or microcrystalline material, for example silicon, from a plasma on to a substrate. Microwave energy is introduced into a chamber as a sequence of discrete microwave pulses, a film precursors gas is introduced into the chamber as a sequence of discrete gas pulses, and gas for generating atomic hydrogen is supplied to the chamber at least during each microwave pulse. Each microwave pulse is followed in non-overlapping fashion with a precursor gas pulse, and each precursor gas pulse is followed by a period during which there is neither a microwave pulse nor a precursor gas pulse. | 02-25-2010 |
20100062561 | METHOD FOR FORMING A FILM WITH A GRADED BANDGAP BY DEPOSITION OF AN AMORPHOUS MATERIAL FROM A PLASMA - A method is described of forming a film of an amorphous material on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure therein. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The said flow rate of the film precursor gas is altered during the course of deposition of material, so as to cause the bandgap to vary over the thickness of the deposited material. | 03-11-2010 |
20100068415 | DEPOSITION OF AMORPHOUS SILICON FILMS BY ELECTRON CYCLOTRON RESONANCE - A method is described for forming a film of amorphous silicon (a-Si:H) on a substrate by deposition from a plasma. The substrate is placed in an enclosure, a film precursor gas is introduced into the enclosure, and unreacted and dissociated gas is extracted from the enclosure so as to provide a low pressure in the enclosure. Microwave energy is introduced into the gas within the enclosure to produce a plasma therein by distributed electron cyclotron resonance (DECR) and cause material to be deposited from the plasma on the substrate. The substrate is held during deposition at a temperature in the range 200-600° C., preferably 225-350° C. and a bias voltage is applied to the substrate at a level to give rise to a sheath potential in the range −30 to −105V, preferably using a source of RF power in the range of 50-250 mW/cm2 of the area of the substrate holder. | 03-18-2010 |
20100071621 | DEVICE FOR FORMING A FILM BY DEPOSITION FROM A PLASMA - A plasma excitation device is described for use in depositing a film on a substrate from a plasma formed by distributed electron cyclotron resonance. The device comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna. | 03-25-2010 |
20100075065 | FILM DEPOSITION OF AMORPHOUS FILMS BY ELECTRON CYCLOTRON RESONANCE - A method is disclosed for forming a film of an amorphous material, for example amorphous silicon, on a substrate ( | 03-25-2010 |
20100075458 | FILM DEPOSITION OF AMORPHOUS FILMS WITH A GRADED BANDGAP BY ELECTRON CYCLOTRON RESONANCE - A method is described of forming a film of an amorphous material on a substrate ( | 03-25-2010 |
20100105195 | METHOD AND APPARATUS FOR FORMING A FILM BY DEPOSITION FROM A PLASMA - An apparatus is described for depositing a film on a substrate from a plasma. The apparatus comprises an enclosure, a plurality of plasma generator elements disposed within the enclosure, and means, also within the enclosure, for supporting the substrate. Each plasma generator element comprises a microwave antenna having an end from which microwaves are emitted, a magnet disposed in the region of the said antenna end and defining therewith an electron cyclotron resonance region in which a plasma can be generated, and a gas entry element having an outlet for a film precursor gas or a plasma gas. The outlet is arranged to direct gas towards a film deposition area situated beyond the magnet, as considered from the microwave antenna, the outlet being located in, or above, the hot electron confinement envelope. | 04-29-2010 |
20110120541 | SEMICONDUCTOR DEVICE WITH HETEROJUNCTIONS AND AN INTERDIGITATED STRUCTURE - A Semiconductor device including, on at least one surface of a layer made of a crystalline semiconductor material of a certain type of conductivity, a layer made of an amorphous semiconductor material, doped with a type of conductivity opposite to the type of conductivity of the crystalline semiconductor material layer, characterized in that the concentration of the doping elements in the amorphous semiconductor layer varies gradually. | 05-26-2011 |
20110193053 | METHOD FOR MAKING SIDE GROWTH SEMICONDUCTOR NANOWIRES AND TRANSISTORS OBTAINED BY SAID METHOD - A method of fabricating semiconductor nanowires ( | 08-11-2011 |
20110240090 | PHOTOVOLTAIC MODULE INCLUDING A TRANSPARENT CONDUCTIVE ELECTRODE HAVING A VARIABLE THICKNESS, AND METHODS FOR MANUFACTURING SAME - A photovoltaic module includes at least two photovoltaic cells in series, each rectangular cell including, respectively, a first rear thin film electrode, a photovoltaic stack having at least two active materials included between the rear electrode and a transparent conductive electrode made of a thin film, the electrode TC being capable of collecting and transmitting an electric current generated by the photovoltaic stack, the two photovoltaic cells being electrically connected in series by an electrical contact strip that is included between the electrode TC of the first cell and the rear electrode of the second cell. The local thickness of the electrode TC of the cell varies as a function of the distance to the electrical contact strip. Also described are methods for depositing and etching the transparent conductive film so as to simultaneously manufacture a plurality of cells for a single module. | 10-06-2011 |
20120145185 | METHOD FOR CLEANING THE SURFACE OF A SILICON SUBSTRATE - A method for cleaning the surface of a silicon substrate, covered by a layer of silicon oxide includes: a) exposing the surface for 60 to 900 seconds to a radiofrequency plasma, generated from a fluorinated gas, to strip the silicon oxide layer and induce the adsorption of fluorinated elements on the substrate surface, the power density generated using the plasma being 10 mW/cm | 06-14-2012 |
20120146194 | METHOD OF TEXTURING THE SURFACE OF A SILICON SUBSTRATE, AND TEXTURED SILICON SUBSTRATE FOR A SOLAR CELL - The invention relates to a method for texturing the surface of a gaseous phase silicon substrate, and to a textured silicon substrate for a solar cell. The method includes at least a step a) of exposing the surface to an SF | 06-14-2012 |
20120208358 | METHOD FOR PRODUCING A MULTILAYER FILM INCLUDING AT LEAST ONE ULTRATHIN LAYER OF CRYSTALLINE SILICON, AND DEVICES OBTAINED BY MEANS OF SAID METHOD - Method of fabricating a multilayer film having at least one ultrathin layer of crystalline silicon, the film being fabricated from a substrate having a crystalline structure and including a previously-cleaned surface. The method includes the steps of: a) exposing the cleaned surface to a radiofrequency plasma generated in a gaseous mixture of SiF4, hydrogen, and argon, so as to form an ultrathin layer of crystalline silicon having an interface sublayer in contact with the substrate and containing microcavities; b) depositing at least one layer of material on the ultrathin layer of crystalline silicon so as form a multilayer film, the multilayer film including at least one mechanically strong layer; and c) annealing the substrate covered in the multilayer film at a temperature higher than 400° C., thereby enabling the multilayer film to be separated from the substrate. | 08-16-2012 |
20140338744 | Process For Texturing The Surface Of A Silicon Substrate, Structured Substrate And Photovoltaic Device Comprising Such A Structured Substrate - The invention relates to a process for texturing the surface of a silicon substrate, comprising a step of exposing said surface to an MDECR plasma generated, at least from argon, using between 1.5 W/cm | 11-20-2014 |