Patent application number | Description | Published |
20090308446 | BACKSIDE ELECTRODE LAYER AND FABRICATING METHOD THEREOF - A backside electrode layer and a fabricating method thereof are applicable for fabricating a solar cell. The backside electrode layer includes a first electrode layer and a second electrode layer. The first electrode layer is formed on a substrate and has a thickness smaller than 15 μm. The second electrode layer having patterns is formed on the first electrode layer. The first and second electrode layers are fabricated by a cofiring process. As the thickness of the first electrode layer is decreased and the second electrode layer is not a full coverage layer, the material usage of each electrode layer is reduced and the fabrication cost thereof is leveled down. Besides, a thinner electrode layer may avoid warp after the cofiring process. | 12-17-2009 |
20090311821 | Method for producing silicon substrate for solar cells - A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular surface. Thereafter, a metal-activated selective oxidation is performed on the irregular surface with an aqueous solution containing an oxidant and a metal salt, in which the oxidant is one selected from persulfate ion, permanganate ion, bichromate ion, and a mixture thereof. Afterwards, the irregular surface is etched with an aqueous solution containing HF and H | 12-17-2009 |
20100147798 | SURFACE TEXTURIZATION METHOD - A surface texturization method is provided. First, a polymer film is formed on a substrate. Thereafter, a heating treatment is performed on the substrate. The heating treatment results in a textured polymer film having island-shaped and/or microcrack-shaped patterns. Afterwards, an etching process is performed using the textured polymer film as a mask, so as to remove a portion of the substrate to form a textured structure on the surface of the substrate. | 06-17-2010 |
20110120548 | SOLAR CELL STRUCTURE AND METHOD OF MAKING - A solar cell structure includes a semiconductor substrate, a first electrode, a second electrode and at least one via extending through the semiconductor substrate. The first electrode is located in the at least one via, and includes a glass phase and lead oxide, wherein the lead oxide is present in a first weight percentage amount relative to the weight of the glass phase of the first electrode. The second electrode includes a glass phase and lead oxide, and covers the first electrode, wherein the lead oxide of the second electrode is present in a second weight percentage amount relative to the weight of the glass phase of the second electrode. The first weight percentage amount is less than the second weight percentage. | 05-26-2011 |
20110143484 | Method of fabricating solar cell - A method of fabricating a solar cell is provided. A saw damage removal process is performed on a silicon substrate. A dry surface treatment is performed to a surface of the silicon substrate on form an irregular surface. A metal-activated selective oxidation is performed to the irregular surface. By using an aqueous solution, the irregular surface is etched to form a nanotexturized surface of the silicon substrate. A dopant diffusion process is performed on the silicon substrate to form a P-N junction. An anti-reflection layer is formed on the silicon substrate. An electrode is formed on the silicon substrate. | 06-16-2011 |
20120090673 | METHOD FOR FORMING SOLAR CELL WITH SELECTIVE EMITTERS - A method for forming a solar cell with selective emitters is disclosed, including selectively removing a portion of a barrier layer on a substrate to form an opening, performing a texture etching process to the substrate to form a second texture structure in a second region under the opening of the barrier layer, wherein the substrate surface in the first region does not change from the first texture structure. The first texture structure and the second texture structure include a plurality of protruding portions and recessing portions. The distance between neighboring protruding portions of the first texture structure is L | 04-19-2012 |
20130133728 | BACK-CONTACT HETEROJUNCTION SOLAR CELL - A back-contact heterojunction solar cell, having a first conductive type silicon substrate, a first amorphous semiconductor layer, a second amorphous semiconductor layer, a first conductive type semiconductor layer, a second conductive type semiconductor layer and a second conductive type doped region is introduced. The first amorphous semiconductor layer disposed on the illuminated surface of the silicon substrate is an intrinsic semiconductor layer or is of the first conductive type. The second amorphous semiconductor layer disposed on the non-illuminated surface of the silicon substrate is an intrinsic semiconductor layer. The first and the second conductive type semiconductor layers are disposed on the second amorphous semiconductor layer. The second conductive type doped region is located in the silicon substrate under the second conductive type semiconductor layer and is in contact with the second amorphous semiconductor layer. | 05-30-2013 |