Patent application number | Description | Published |
20130153956 | SILICON ON INSULATOR INTEGRATED HIGH-CURRENT N TYPE COMBINED SEMICONDUCTOR DEVICE - A silicon on insulator integrated high-current N type combined semiconductor device, which can improve the current density, comprises a P type substrate and a buried oxide layer arranged thereon. A P type epitaxial layer divided into a region I and a region II is arranged on the buried oxide layer. The region I comprises an N type drift region, a P type deep well, an N type buffer well, a P type drain region, an N type source region and a P type body contact region; a field oxide layer and agate oxide layer are arranged on a silicon surface, and a polysilicon lattice is arranged on the gate oxide layer. The region II comprises an N type triode drift region, a P type deep well, an N type triode buffer well, a P type emitting region, an N type base region, an N type source region and a P type body contact region; a field oxide layer and a gate oxide layer are arranged on a silicon surface, and a polysilicon lattice is arranged on the gate oxide layer. It is characterized in that the N type base region is wrapped in the N type buffer region, and the drain electrode metal on the P type drain region is connected with the base electrode metal on the N type base region by a metal layer. In this invention, the current density of the device has been obviously improved without increasing the device area and reducing other performances of the device. | 06-20-2013 |
20140203406 | ISOLATION STRUCTURE OF HIGH-VOLTAGE DRIVING CIRCUIT - An isolation structure of a high-voltage driving circuit includes a P-type substrate and a P-type epitaxial layer; a high voltage area, a low voltage area and a high and low voltage junction terminal area are arranged on the P-type epitaxial layer; a first P-type junction isolation area is arranged between the high and low voltage junction terminal area and the low voltage area, and a high-voltage insulated gate field effect tube is arranged between the high voltage area and the low voltage area; two sides of the high-voltage insulated gate field effect tube and an isolation structure between the high-voltage insulated gate field effect tube and a high side area are formed as a second P-type junction isolation area. | 07-24-2014 |
20140306266 | HIGH-CURRENT N-TYPE SILICON-ON-INSULATOR LATERAL INSULATED-GATE BIPOLAR TRANSISTOR - A high-current, N-type silicon-on-insulator lateral insulated-gate bipolar transistor, including: a P-type substrate, a buried-oxide layer disposed on the P-type substrate, an N-type epitaxial layer disposed on the oxide layer, and an N-type buffer trap region. A P-type body region and an N-type central buffer trap region are disposed inside the N-type epitaxial layer; a P-type drain region is disposed in the buffer trap region; N-type source regions and a P-type body contact region are disposed in the P-type body region; an N-type base region and a P-type emitter region are disposed in the buffer trap region; gate and field oxide layers are disposed on the N-type epitaxial layer; polycrystalline silicon gates are disposed on the gate oxide layers; and a passivation layer and metal layers are disposed on the surface of the symmetrical transistor. P-type emitter region output and current density are improved without increasing the area of the transistor. | 10-16-2014 |
20150270377 | TRANSVERSE ULTRA-THIN INSULATED GATE BIPOLAR TRANSISTOR HAVING HIGH CURRENT DENSITY - A transverse ultra-thin insulated gate bipolar transistor having current density includes: a P substrate, where the P substrate is provided with a buried oxide layer thereon, the buried oxide layer is provided with an N epitaxial layer thereon, the N epitaxial layer is provided with an N well region and P base region therein, the P base region is provided with a first P contact region and an N source region therein, the N well region is provided with an N buffer region therein, the N well region is provided with a field oxide layer thereon, the N buffer region is provided with a P drain region therein, the N epitaxial layer is provided therein with a P base region array including a P annular base region, the P base region array is located between the N well region and the P base region, the P annular base region is provided with a second P contact region and an N annular source region therein, and the second P contact region is located in the N annular source region. The present invention greatly increases current density of a transverse ultra-thin insulated gate bipolar transistor, thus significantly improving the performance of an intelligent power module. | 09-24-2015 |
Patent application number | Description | Published |
20090308037 | Sliding Pulley Drive Mechanism in Cutting Platform of Lawn Mower - The present invention relates to a sliding pulley drive mechanism in cutting platform of lawn mower. An engine for the pulley drive mechanism is fixed to a chassis; a cutting platform is connected to the chassis, and can move up and down in relation to the chassis; a bracket is fixed to the cutting platform; cutting platform drive belts are fitted over the output shaft of the engine, an external spline shaft is fixed to the output shaft of the engine, and a belt pulley with an internal spline is mounted on an external spline shaft; the cutting platform drive belt is mounted on the belt pulley with an internal spline; the lower end of the belt pulley with an internal spline is connected with a shock absorbing bushing, a bearing, and a bearing base plate. The bearing base plate is connected to the bracket. In this invention, with a spline mechanism, the belt pulley on the engine can slide up or down on the output shaft of the engine as the elevation of the cutting platform is adjusted, so that the cutting platform drive belts are kept in the same plane, and therefore the belt service lifespan is elongated. | 12-17-2009 |
20090308043 | Quick Switching Mechanism for Side Discharge Unit and Grass Chopper Unit of a Lawn Mower - The present disclosed invention relates to a quick switching mechanism for the side discharge unit and the chopper unit of a lawn mower: a side discharge unit and a chopper unit are mounted at the grass outlet on a cutting platform; wherein, the side discharge unit comprises a grass discharging gear shaft, a grass discharging hood mounted on the grass discharging gear shaft; the grass chopper unit comprises a grass chopping gear shaft, a grass chopping closing plate mounted on the grass chopping gear shaft; the small gear on the grass discharging gear shaft is engaged to the big gear on the grass chopping gear shaft; a guy wire is mounted on the cutting platform, and is connected to a rotary arm mounted on one end of the grass chopping gear shaft. In the invention, the current grass discharging hood is kept, and therefore the safety of grass discharging is not compromised; during the mowing process, when the mower runs into a place (e.g., a kerb, shrub, etc.) where the grass discharging process is difficult, the mower can be switched from grass discharging mode to grass chopping mode immediately; after the mower passes the place, it can be switched back to grass discharging mode quickly; if the mower runs into a narrow place (e.g., the space between two trees), the mower can be switching from wide discharging mode to narrow discharging mode immediately; the mower can be switched back quickly after it passes through the place. | 12-17-2009 |