Patent application number | Description | Published |
20080234187 | Human circulating cytokine CC-1 - Cytokine CC-1 having the amino acid sequence according to SEQ ID No. 6 and its biologically active fragments and/or derivatives, in particular amidized, acetylized, phosphorylized and/or glycosylized derivatives. | 09-25-2008 |
20080242609 | Composition for the therapy of diabetes mellitus and adiposity - A composition containing at least two of the following active substances A, B, C, wherein: | 10-02-2008 |
20110257099 | Use of Natriuretic Peptide for Treating Heart Failure - The present invention relates to the use of a natriurectic peptide, such as urodilatin, for treating a patient suffering from heart failure, such as acute decompensated heart failure. Preferably, a composition comprising an effective amount of urodilatin is intravenously administered to the patient continuously through a time period of at least 24 hours and up to 120 hours, preferably at least 48 hours. | 10-20-2011 |
20140024585 | Composition for the therapy of diabetes mellitus and adiposity - A composition containing at least two of the following active substances A, B, C, wherein:
| 01-23-2014 |
20140287999 | Use of Natriuretic Peptide for Treating Heart Failure - The present invention relates to the use of a natriurectic peptide, such as urodilatin, for treating a patient suffering from heart failure, such as acute decompensated heart failure. Preferably, a composition comprising an effective amount of urodilatin is intravenously administered to the patient continuously through a time period of at least 24 hours and up to 120 hours, preferably at least 48 hours. | 09-25-2014 |
Patent application number | Description | Published |
20120181656 | Semiconductor Device and Method of Manufacturing Thereof - A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode. | 07-19-2012 |
20120202327 | Compressive Polycrystalline Silicon Film and Method of Manufacture Thereof - In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C. | 08-09-2012 |
20130043562 | Compressive Polycrystalline Silicon Film and Method of Manufacture Thereof - In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline semiconductive seed layer over a substrate and forming a silicon layer by depositing silicon directly on the polycrystalline silicon seed layer under amorphous process conditions at a temperature below 600 C. | 02-21-2013 |
20140145305 | Capacitor and Method of Forming a Capacitor - A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode. | 05-29-2014 |
Patent application number | Description | Published |
20140204971 | Method for performing a differential thermal analysis - A method for conducting a differential thermal analysis, in which a sample disposed in a temperable sample space is tempered according to an essentially linear temperature program extending from a start temperature to an end temperature, such that, from the result of a measurement of the sample temperature conducted during tempering at a number of measurement time points, a DTA signal is calculated as the difference between a measured sample temperature and a reference temperature calculated according to a temperature curve model. According to the invention, for every measurement time point, the relevant reference temperature is calculated by the following steps: (a) establish a time interval containing the relevant measurement time point; (b) calculate a non-linear adjustment function for the measured sample temperature curve in the time interval; and (c) calculate the reference temperature as a value of the adjustment function for the measurement time point. | 07-24-2014 |
20150013479 | METHOD AND MAGAZINE FOR HOLDING IN READINESS, TRANSPORTING, PROCESSING AND ARCHIVING THERMOANALYTICAL SAMPLES - A method and a device for holding in readiness, transporting, processing and archiving thermoanalytical samples are disclosed. The sample containers, into which the thermoanalytical samples to be investigated are to be introduced, are provided in a magazine. | 01-15-2015 |
20150019157 | Method For Evaluating A Measurement Result Of A Thermal Analysis, As Well As Use Of The Method, Computer Unit, Computer Program Product And System For Performing The Method - A method for evaluating a measurement result of a thermal analysis. A program-controlled computer unit is used to calculate at least one probability of the agreement of the measurement result with at least one dataset previously stored in the computer unit, wherein this calculation is based on a comparison of effect data previously extracted from a measurement curve of the thermal analysis with corresponding stored effect data of the dataset. The evaluation can advantageously include, an automatic recognition and classification of measurement curves and can be carried out in particular more efficiently, more economically and more quickly than previously, with at the same time a high quality of evaluation. | 01-15-2015 |