Patent application number | Description | Published |
20140293726 | MEMORY CONTROLLER AND ASSOCIATED METHOD FOR GENERATING MEMORY ADDRESS - A memory controller is connected to a double-data-rate dynamic random access memory (DDR DRAM) and an accessing unit. The memory controller includes: a processing unit, configured to receive a system address generated by the accessing unit; and a mapping unit, located in the processing unit, configured to convert the system address to a memory address and transmitting the memory address to the DDR DRAM. When a burst length of the DDR DRAM is L and L=2 | 10-02-2014 |
20140325137 | MEMORY CONTROLLER AND ASSOCIATED SIGNAL GENERATING METHOD - The invention is directed to a memory controller and an associated signal generating method. By appropriately arranging a sequence according to which command signals are generated and expanding a latching interval of a part of address signals, not only the memory controller is enabled to control the DDR memory modules in a functional manner to further overcome issues of conventionally small latching intervals, but also system stability and access performance are reinforced as the memory access clock speed continue to increase. | 10-30-2014 |
20140325465 | CHIP WITH FLEXIBLE PAD SEQUENCE MANIPULATION AND ASSOCIATED METHOD - A chip with flexible pad sequence manipulation is provided. The chip can be a memory controller, and includes a hub unit. The hub unit, formed by a gate array, is placed in a hub region predetermined during placing and routing procedures, and is capable of supporting re-placing and re-routing for changing interior interconnections and a pad sequence of the chip. | 10-30-2014 |
20140379976 | MEMORY CONTROLLER AND ASSOCIATED SIGNAL GENERATING METHOD - A memory controller and an associated signal generating method are provided. A generating sequence of commands is properly arranged to enlarge latching intervals of an address signal and a bank signal for stable access of a DDR memory module. | 12-25-2014 |
20150062138 | TIMING CONTROLLER FOR IMAGE DISPLAY AND ASSOCIATED CONTROL METHOD - A timing controller for a panel display system includes: an image signal receiver that receives an image signal; an overdrive circuit that receives and converts the image signal from the image signal receiver according to successive first frame data and second frame data in the image signal; an image signal transmitter that receives the converted image signal from the overdrive circuit and transmits the same to a display panel; a memory; and a memory interface unit. In a normal read/write period, the memory interface unit receives the first frame data from the overdrive circuit and stores the same in the memory, and fetches the first frame data from the memory when the overdrive circuit receives the second frame data in the image signal and transmits the same to the overdrive circuit. The memory interface unit further obtains sampling results to generate a preferred delay phase. | 03-05-2015 |
Patent application number | Description | Published |
20080197420 | Method for fabricating dual-gate semiconductor device - A method for fabricating a dual-gate semiconductor device. A preferred embodiment comprises forming a gate stack having a first portion and a second portion, the first portion and the second portion including a different composition of layers, forming photoresist structures on the gate stack to protect the material to be used for the gate structures, etching away a portion of the unprotected material, forming recesses adjacent to at least one of the gate structures in the substrate upon which the gate structures are disposed, and forming a source region and the drained region in the respective recesses. The remaining portions of the gate stack layers that are not a part of a gate structure are then removed. In a particularly preferred embodiment, an oxide is formed on the vertical sides of the gate structures prior to etching to create the source and drain regions. | 08-21-2008 |
20080230844 | Semiconductor Device with Multiple Silicide Regions - A system and method for forming a semiconductor device with a reduced source/drain extension parasitic resistance is provided. An embodiment comprises implanting two metals (such as ytterbium and nickel for an NMOS transistor or platinum and nickel for a PMOS transistor) into the source/drain extensions after silicide contacts have been formed. An anneal is then performed to create a second silicide region within the source/drain extension. Optionally, a second anneal could be performed on the second silicide region to force a further reaction. This process could be performed to multiple semiconductor devices on the same substrate. | 09-25-2008 |
20080230852 | Fabrication of FinFETs with multiple fin heights - A semiconductor structure includes a first semiconductor strip extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the first semiconductor strip has a first height. A first insulating region is formed in the semiconductor substrate and surrounding a bottom portion of the first semiconductor strip, wherein the first insulating region has a first top surface lower than a top surface of the first semiconductor strip. A second semiconductor strip extends from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the second semiconductor strip has a second height greater than the first height. A second insulating region is formed in the semiconductor substrate and surrounding a bottom portion of the second semiconductor strip, wherein the second insulating region has a second top surface lower than the first top surface, and wherein the first and the second insulating regions have substantially same thicknesses. | 09-25-2008 |