Patent application number | Description | Published |
20090306300 | Cell Made of Polymers for Spectra Measurement and Method for Producing the Same - This invention provides a cell made of polymers for spectra measurement while inhibiting a decrease in a molecular weight of resin caused by discharge treatment and having a stable hydrophilic modified surface. The hydrophilic resin cell is prepared by providing a polymeric resin cell between the two opposing electrodes, applying an electric field to a region between the above opposing electrodes under a nitrogen atmosphere with a pressure close to the atmospheric pressure to generate an electric discharge, and exposing the cell subjected to discharge treatment with a gas including oxygen. | 12-10-2009 |
20100009862 | BIOMOLECULE SENSOR, METHOD FOR MANUFACTURING THE SAME, BIOMOLECULE DETECTION METHOD, AND BIOMOLECULE DETECTION SYSTEM - The present invention aims to improve detecting accuracy and reproducibility of a biomolecule sensor. The biomolecule sensor of the present invention includes single probe molecules orderly aligned and fixed on grid points on the surface of a substrate. Accordingly, in the biomolecule sensor of the present invention: probe molecules for detecting a biomolecule are orderly aligned and separately fixed; blocking for preventing non-specific adsorption is applied to a region other than the region of the probe molecules for detecting a biomolecule; and fluorescence enhancement is achieved by metal microparticles. | 01-14-2010 |
20100064396 | SCANNING PROBE MICROSCOPE AND SAMPLE OBSERVING METHOD USING THE SAME - In a near-field scanning microscope using an aperture probe, the upper limit of the aperture formation is at most several ten nm in practice. In a near-field scanning microscope using a scatter probe, the resolution ability is limited to at most several ten nm because of the external illuminating light serving as background noise. Moreover, measurement reproducibility is seriously lowered by a damage or abrasion of a probe. Optical data and unevenness data of the surface of a sample can be measured at a nm-order resolution ability and a high reproducibility while damaging neither the probe nor the sample by fabricating a plasmon-enhanced near-field probe having a nm-order optical resolution ability by combining a nm-order cylindrical structure with nm-order microparticles and repeatedly moving the probe toward the sample and away therefrom at a low contact force at individual measurement points on the sample. | 03-11-2010 |
20100218287 | SCANNING PROBE MICROSCOPE AND METHOD OF OBSERVING SAMPLE USING THE SAME - In a scanning probe microscope, a nanotube and metal nano-particles are combined together to configure a plasmon-enhanced near-field probe having an optical resolution on the order of nanometers as a measuring probe in which a metal structure is embedded, and this plasmon-enhanced near-field probe is installed in a highly-efficient plasmon exciting unit to repeat approaching to and retracting from each measuring point on a sample with a low contact force, so that optical information and profile information of the surface of the sample are measured with a resolution on the order of nanometers, a high S/N ratio, and high reproducibility without damaging both of the probe and the sample. | 08-26-2010 |
20100325761 | Scanning Probe Microscope and Method of Observing Sample Using the Same - Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force. | 12-23-2010 |
20110300035 | AUTOANALYZER AND PIPETTING NOZZLE FOR AUTOANALYZER - There is provided a highly reliable autoanalyzer less liable to sample and reagent carry-over and capable of preventing contamination and precisely pipetting samples and reagents. Using a sample pipetting nozzle | 12-08-2011 |
20120020836 | PIPETTING NOZZLE FOR AUTOANALYZER, METHOD FOR PRODUCING SAME AND AUTOANALYZER USING SAME - In an autoanalyzer for analyzing samples, such as urine and blood, analytical and measured values are prevented from being affected by carry-over caused by the repeated use of a pipetting nozzle. A molecular layer for inhibiting the adsorption of biological polymers is formed by coating surfaces of the pipetting nozzle with a polyethylene glycol derivative chemisorbed thereto, thereby reducing carry-over caused by the pipetting nozzle. | 01-26-2012 |
20120204297 | Scanning Probe Microscope and Method of Observing Sample Using the Same - Optical information and topographic information of the surface of a sample are measured at a nanometer-order resolution and with high reproducibility without damaging a probe and the sample by combining a nanometer-order cylindrical structure with a nanometer-order microstructure to form a plasmon intensifying near-field probe having a nanometer-order optical resolution and by repeating approach/retreat of the probe to/from each measurement point on the sample at a low contact force. | 08-09-2012 |
20130145507 | SCANNING PROBE MICROSCOPE AND SAMPLE OBSERVING METHOD USING THE SAME - In a near-field scanning microscope using an aperture probe, the upper limit of the aperture formation is at most several ten nm in practice. In a near-field scanning microscope using a scatter probe, the resolution ability is limited to at most several ten nm because of the external illuminating light serving as background noise. Moreover, measurement reproducibility is seriously lowered by a damage or abrasion of a probe. Optical data and unevenness data of the surface of a sample can be measured at a nm-order resolution ability and a high reproducibility while damaging neither the probe nor the sample by fabricating a plasmon-enhanced near-field probe having a nm-order optical resolution ability by combining a nm-order cylindrical structure with nm-order microparticles and repeatedly moving the probe toward the sample and away therefrom at a low contact force at individual measurement points on the sample. | 06-06-2013 |
Patent application number | Description | Published |
20090021546 | INKJET PRINTING APPARATUS AND PRINTHEAD DRIVING METHOD - An object of this invention is to decrease the amount of ink mist while keeping the image quality high in inkjet printing. To achieve this object, printing is performed by time-divisionally driving, for each block, a plurality of nozzles for discharging ink. In preliminary discharge, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the first time interval. In printing, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the second time interval longer than the first time interval. | 01-22-2009 |
20090256887 | LIQUID DISCHARGE METHOD AND LIQUID DISCHARGE HEAD - A liquid discharge method allowing a liquid inside a flow path to be heated by a heat generating element ( | 10-15-2009 |
20100253726 | INKJET PRINTING APPARATUS AND PRINTHEAD DRIVING METHOD - An object of this invention is to decrease the amount of ink mist while keeping the image quality high in inkjet printing. To achieve this object, printing is performed by time-divisionally driving, for each block, a plurality of nozzles for discharging ink. In preliminary discharge, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the first time interval. In printing, the nozzles are so driven as to set the driving time interval between neighboring nozzles to the second time interval longer than the first time interval. | 10-07-2010 |
20100315456 | PRINTING APPARATUS AND PRINTING METHOD - In an ink jet printing apparatus for scanning a print medium with a printing head and printing an image thereon, the printing head includes a plurality of ink ejection port arrays. The ink ejection ports in each of the arrays are arranged in a direction crossing a scanning direction of the printing head relative to the print medium. An allowable recording rate given to at least one of the ejection port arrays behind an ejection port array located at the front in the scanning direction is set lower than that given to the one located at the front. As a result, a printing apparatus capable of suppressing a throughput speed thereof and adhesion of ink mists to a formation face of the ejection ports can be provided. | 12-16-2010 |
20140209980 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes forming a buffer layer made of a nitride semiconductor, forming a channel layer made of a nitride semiconductor over the buffer layer, forming a barrier layer made of a nitride semiconductor over the channel layer, forming a cap layer made of a nitride semiconductor over the barrier layer, forming a gate insulating film so as to in contact with the cap layer; and forming a gate electrode over the gate insulating film, wherein compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer by controlling compositions of the cap layer, the barrier layer, the channel layer, and the buffer layer. | 07-31-2014 |
20140239311 | SEMICONDUCTOR DEVICE - A semiconductor device includes a buffer layer, a channel layer and a barrier layer formed over a substrate, a trench penetrating through the barrier layer to reach the middle of the channel layer, and a gate electrode disposed inside the trench via a gate insulating film. The channel layer contains n-type impurities, and a region of the channel layer positioned on a buffer layer side has an n-type impurity concentration larger than a region of the channel layer positioned on a barrier layer side, and the buffer layer is made of nitride semiconductor having a band gap wider than that of the channel layer. The channel layer is made of GaN and the buffer layer is made of AlGaN. The channel layer has a channel lower layer containing n-type impurities at an intermediate concentration and a main channel layer formed thereon and containing n-type impurities at a low concentration. | 08-28-2014 |
20140264274 | SEMICONDUCTOR DEVICE - To improve performance of a semiconductor device. For example, on the assumption that a superlattice layer is inserted between a buffer layer and a channel layer, a concentration of acceptors introduced into nitride semiconductor layers forming a part of the superlattice layer is higher than a concentration of acceptors introduced into nitride semiconductor layers forming the other part of the superlattice layer. That is, the concentration of acceptors introduced into the nitride semiconductor layers having a small band gap is higher than the concentration of acceptors introduced into the nitride semiconductor layers having a large band gap. | 09-18-2014 |
20140353720 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a barrier layer, a trench penetrating therethrough and reaching the inside of the channel layer, a gate electrode placed in the trench via a gate insulating film, and drain and source electrodes on the barrier layer on both sides of the gate electrode. The gate insulating film has a first portion made of a first insulating film and extending from the end portion of the trench to the side of the drain electrode and a second portion made of first and second insulating films and placed on the side of the drain electrode relative to the first portion. The on resistance can be reduced by decreasing the thickness of the first portion at the end portion of the trench on the side of the drain electrode. | 12-04-2014 |
20150041821 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An electrode comes in ohmic contact with an AlGaN layer. A semiconductor device SD has a nitride semiconductor layer GN | 02-12-2015 |
20150048419 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device has a channel layer formed above a substrate, a barrier layer formed over the channel layer and having a band gap larger than that of the channel layer, a trench passing through the barrier layer as far as a midway of the channel layer, and a gate electrode disposed byway of a gate insulation film in the inside of the trench. Then, the end of the bottom of the trench is in a rounded shape and the gate insulation film in contact with the end of the bottom of the trench is in a rounded shape. By providing the end of the bottom of the trench with a roundness as described above, a thickness of the gate insulation film situated between the end of the bottom of the gate electrode and the end of the bottom of the trench can be decreased. Thus, the channel is formed also at the end of the bottom of the trench to reduce the resistance of the channel. | 02-19-2015 |
20150115323 | SEMICONDUCTOR DEVICE - A semiconductor device including a first nitride semiconductor layer formed over a substrate, a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a band gap wider than that of the first nitride semiconductor layer, a trench penetrating through the second nitride semiconductor layer to reach the middle of the first nitride semiconductor layer, a conductive film formed at a corner portion corresponding to an end portion of a bottom surface of the trench and a gate electrode disposed via a gate insulating film inside the trench including a region on the conductive film. | 04-30-2015 |
Patent application number | Description | Published |
20080272858 | Surface Acoustic Wave Device - A surface acoustic wave device having a three-layered structure of sealing resin for sealing a mounting substrate and a surface acoustic wave element in which the elastic modulus of resin of the intermediate layer is higher than that of resin of the outermost layer and the elastic modulus of resin of the innermost layer is lower than that of resin of the outermost layer. The three-layered structure of the sealing resin suppresses crush of a bump when a pressure is applied from the outside and reduces stress applied to the bump due to the change in temperature. | 11-06-2008 |
20090014916 | METHOD AND APPARATUS FOR PRODUCING THREE-DIMENSIONAL STRUCTURE - The present invention aims to produce a three-dimensional structure having a high aspect ratio by using inkjet printing techniques or the like. Specifically, a three-dimensional structure is produced by ejecting a liquid drop of a solution, which contains a solvent and polymer particles dispersed in the solvent while having a viscosity of not more than 100 cps, from a nozzle onto a substrate; then evaporating the solvent and melting the polymer particles by irradiating the liquid drop with light; and then depositing the molten polymer particles on the substrate. The present invention can be applied to production of biochips and the like. | 01-15-2009 |
20090139253 | REFRIGERATION APPARATUS - Disclosed is a refrigeration apparatus capable of minimizing the pressure loss of a refrigerant circulated through an internal heat exchanger and capable of improving a cooling capability. A refrigeration apparatus in which a compressor, a radiator, an electronic expansion valve and an evaporator are successively annularly connected to one another to constitute a refrigerant circuit includes a refrigerator unit provided with the compressor and the radiator, and a cooling unit provided with the electronic expansion valve and the evaporator, the refrigerator unit is connected to one or a plurality of cooling units via a communication pipe to constitute the refrigerant cycle, an internal heat exchanger which performs heat exchange between a refrigerant discharged from the radiator and a refrigerant discharged from the evaporator is constituted of a double tube, and the internal heat exchanger is provided in the cooling unit. | 06-04-2009 |
20090206784 | Safety Device for Power Window - A safety device for power window, which generates pulses by rotation of a raising/lowering motor for raising or lowering a window glass of a power window for vehicle, and determines occurrence of pinching of a foreign substance from change in pulse width during closing operation of a window, and thus reverses window operation into window opening operation, is obtained, wherein false determination due to variation in voltage of a battery hardly occurs. | 08-20-2009 |
20090295556 | SAFETY DEVICE FOR POWER WINDOW, OPENING/CLOSING CONTROL METHOD AND PLATE-GLASS PROCESSING METHOD - A safety device for a power window is achieved, which considers variation in capacitance during raising of a window glass, and considers variation in capacitance due to a use situation so as to reduce a possibility of false operation. | 12-03-2009 |
20100219718 | BOUNDARY ACOUSTIC WAVE DEVICE - A boundary acoustic wave device includes a first medium layer made of piezoelectric material, a second medium layer provided on the first medium layer, a third medium layer provided on the second medium layer, and an electrode provided at an interface between the second and third medium layers. The electrode drives the third medium layer to generate a transverse wave. A propagation speed of the transverse wave in the third medium layer is lower than a propagation speed of the transverse wave in the first medium layer. A propagation speed of the transverse wave in the second medium layer is lower than the propagation speed of the transverse wave in the first medium layer. This boundary acoustic wave device has a large electro-mechanical coupling coefficient. | 09-02-2010 |
20110156837 | ACOUSTIC WAVE DEVICE, AND FILTER AND DUPLEXER USING THE SAME - An acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a dielectric layer provided so as to cover the IDT electrode, and a first stress relaxation layer provided on the dielectric layer. Furthermore, the acoustic wave device includes an extraction electrode connected to the IDT electrode and extracted onto the first stress relaxation layer, and a bump provided on the extraction electrode. An elastic modulus of the first stress relaxation layer is smaller than that of the dielectric layer. | 06-30-2011 |
20120223789 | ELASTIC-WAVE FILTER DEVICE AND COMPOSITE DEVICE INCLUDING THE SAME - An elastic-wave filter device includes a first piezoelectric substrate, a second piezoelectric substrate, a first pillar-like wiring electrode, and a second pillar-like wiring electrode. The first and second substrates have a first and a second IDT electrodes on their top faces respectively. A lateral face of the second substrate confronts a lateral face of the first substrate. The first pillar-like electrode and the second pillar-like electrode are formed above the first and the second substrates respectively, and are electrically connected to the first and the second IDT electrodes respectively. The first substrate is thicker than the second substrate. A distance between a plane including the top face of the first substrate and a plane including the top face of the second substrate is smaller than a distance between a plane including an underside of the first substrate and a plane including an underside of the second substrate. | 09-06-2012 |
20130098280 | SEWING MACHINE AUXILIARY STORAGE COMPARTMENT - A sewing machine auxiliary storage compartment is provided that can be attached to or detached from a sewing machine body part and that allows small articles such as accessories to be taken out therefrom or put thereinto even during sewing. Upper and lower parts are attached slidably with respect to each other. The upper part | 04-25-2013 |
20130171018 | SCREW COMPRESSOR - A screw compressor includes a casing having low and high pressure spaces, a screw rotor inserted in a cylinder part of the casing, and a slide valve disclosed in the cylinder part. The screw rotor has a plurality of helical grooves forming a compression chamber. The slide valve is moveable along an axis of the screw rotor and faces an outer periphery of the screw rotor to form a discharge port to communicating the compression chamber with the high pressure space. Fluid in the low pressure space is sucked into the compression chamber, compressed, and then discharged to the high-pressure space when the screw rotor rotates. The slide valve includes a sealing projection located on a back surface of the slide valve opposite to the screw rotor, and separating the low and high pressure spaces from each other when the sealing projection is in slidable contact with the casing. | 07-04-2013 |
20140298118 | INFORMATION PROCESSING APPARATUS AND ERROR PROCESSING METHOD - An information processing apparatus according to one aspect of the present disclosure includes a communication control portion, an error code storage portion, an acquiring portion, and a determination portion. Communication control portion communicates with storage device based on interface communication standard, to perform data transfer therewith. Error code storage portion stores one or a plurality of selected error codes selected from a plurality of error codes defined by interface communication standard. Acquiring portion acquires error information outputted from storage device. Determination portion determines whether or not error code indicated by error information coincides with selected error code. When determination portion determines that error code coincides with selected error code, communication control portion communicates again with storage device to perform data transfer therewith. When determination portion determines that error code does not coincide with selected error code, communication control portion executes error processing corresponding to error code indicated by error information. | 10-02-2014 |
20140355075 | IMAGE READING DEVICE, IMAGE FORMING APPARATUS, AND RECORDING MEDIUM - An image reading device includes an image reading section, an image processing section, and a density reference member. Based on a location of a defect in the image reading section or in the density reference member, the image processing section determines whether or not to at least partially restrict either a read range of the image reading section when the image reading section reads an original document or usage of a result obtained by reading the original document by the image reading section. The image processing section determines whether or not to apply a smoothing process to each density value detected by reading the original document by the image reading section. The determination is made based on a comparison between a normal-value determining threshold and each density value detected by reading the density reference member by the image reading section. | 12-04-2014 |
20150116792 | IMAGE READING APPARATUS, IMAGE FORMING APPARATUS, STORAGE MEDIUM, AND IMAGE READING METHOD - An image reading apparatus irradiates an object with light and reads an image on or of the object. The image reading apparatus includes a table on which the object is placed, a planar light source configured to emit light to the object, a range-finding section configured to measure a distance between the table and the object, and a control section configured to cause the planar light source to entirely or partially emit light. The control section controls a light emitting portion of the planar light source thereby to control a light collection spot for the planar light source to a position based on a measurement value obtained by the range-finding section. | 04-30-2015 |
20150124299 | IMAGE READING DEVICE, IMAGE FORMING APPARATUS, AND IMAGE READING METHOD - An image reading device includes first carriage, a stepper motor, a shakiness level calculating section, and a timing adjusting section. The first carriage reads an image of a document to be read loaded on a document table. The stepper motor moves the first carriage relative to the document. The shakiness level calculating section calculates a shakiness level of the image, indicating shakiness of the image during reading by the first carriage, based on image data read by the first carriage with respect to a reference image incorporated into the document table. The timing adjusting section adjusts a rise timing of a step signal input to the stepper motor in accordance with the shakiness level that is calculated. | 05-07-2015 |
Patent application number | Description | Published |
20080199201 | Image Forming Device and Image Input Device - In an image forming device which acquires image information of a document and forms an image on a recording sheet, an image forming device body has a first reading unit and a processing unit, wherein the first reading unit acquires image information of a document and the processing unit forms an image on a recording sheet based on the image information. An image input device has a second reading unit which acquires image information of a document. The image input device is arranged in the image forming device body at a position lower than a position of the first reading unit. | 08-21-2008 |
20090060612 | Image forming apparatus - The height of an image reading unit or an operating panel in an image forming apparatus is adjusted to facilitate their operation depending on the physical characteristics of a user, such as his height or use of a wheel chair. A second operating panel and a second automatic document feeder (ADF) are disposed on the side of the image forming apparatus, so that a user on a wheel chair can access them easily. The second ADF houses plural sheet trays that are configured to open or close together. When the sheet trays are closed, a first operating panel disposed at the top of the apparatus is activated while the second operating panel on the side is deactivated. When the sheet trays are open, the second operating panel is activated while the first operating panel is deactivated. | 03-05-2009 |
20090066644 | Input control device and image forming apparatus - An input control device and an image forming apparatus capable of proving an easy-to-use operating environment even for a user having difficulties operating such conventional devices and apparatuses due to his/her height, color vision deficiency, weak vision, use of a wheelchair, and the like is disclosed. In the input control device, based on the detected distance between an instruction item on the display and an operation direction means (such as a user's finger), the display mode of the instruction item is changed (by, for example, changing positions, colors, and combinations). Further, as the operation direction means approaches, the size of the instruction item on the display becomes larger, thereby improving the operability especially for a user with color vision deficiency or weak vision. | 03-12-2009 |
20100182654 | IMAGE FORMING DEVICE - An image forming device including: a scanning device configured to acquire an image data of a manuscript; a processing device configured to form an image on a recording medium based on the image data; a main body of the image forming device having a first operation section configured to input an instruction to the image forming device; and a second operation section arranged at the main body of the image forming device. The image forming device acquires the image data of the manuscript and forms the image on the recording medium in accordance with an operation of at least one of the first and the second operation sections, the second operation section being operable at a low position compared to a position of the first operation section. | 07-22-2010 |
Patent application number | Description | Published |
20100000978 | LASER MACHINING DEVICE AND LASER MACHINING METHOD - A laser machining device is provided with a laser light source, a spatial light modulator, a driving unit, a control unit, and a condensing optical system. The control unit selects a basic hologram corresponding to each basic machining pattern included in a whole machining pattern in a workpiece from a plurality of basic holograms stored by the storage unit, and determines a display region of the basic hologram in the spatial light modulator so that the deviation of the value of “Iη/n” becomes small for the selected respective basic hologram when the intensity of a laser beam input to a display region of the basic hologram in the spatial light modulator is defined as I, the diffraction efficiency of the laser beam in the basic hologram is defined as η, and the number of condensing points in a basic machining pattern corresponding to the basic hologram is defined as n. | 01-07-2010 |
20100026620 | LCOS SPATIAL LIGHT MODULATOR - The display area selection circuit selects a desired display area. The signal generating circuit sets a period of each shift signal generated while the selection position of the pixel diode is between the shift start position and the display start position shorter than a period of each shift signal generated while the selection position of the pixel diode is between the display start position and the display end position. | 02-04-2010 |
20100079832 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD - A laser processing apparatus 1 includes a laser light source | 04-01-2010 |
20120196427 | LASER WORKING METHOD, LASER WORKING APPARATUS, AND ITS MANUFACTURING METHOD - An object is irradiated with a laser light modulated by a reflection type spatial light modulator such that aberration of the laser light converged inside the object becomes a predetermined aberration or less. Therefore, aberration of the laser light generated at a position on which a converging point of the laser light is located is made as small as possible, to enhance the energy density of the laser light at that position, which makes it possible to form a modified region with a high function as a starting point for cutting. In addition, because the reflection type spatial light modulator is used, it is possible to improve the utilization efficiency of the laser light as compared with a transmissive type spatial light modulator. | 08-02-2012 |
20120234808 | LASER PROCESSING METHOD - Laser lights L | 09-20-2012 |
20130068742 | LASER MACHINING DEVICE AND LASER MACHINING METHOD - A laser machining device | 03-21-2013 |
20130242373 | LIGHT CONTROL DEVICE AND LIGHT CONTROL METHOD - A light control device | 09-19-2013 |
20130341308 | ABERRATION-CORRECTING METHOD, LASER PROCESSING METHOD USING SAID ABERRATION-CORRECTING METHOD, LASER IRRADIATION METHOD USING SAID ABERRATION-CORRECTION METHOD, ABERRATION-CORRECTION DEVICE AND ABERRATION-CORRECTING PROGRAM - In an aberration-correcting method according to an embodiment of the present invention, in an aberration-correcting method for a laser irradiation device | 12-26-2013 |
20140036182 | PHASE MODULATING APPARATUS AND PHASE MODULATING METHOD - The present invention relates to a phase modulating apparatus capable of highly accurately and easily correcting the phase modulation characteristic of a reflective electric address spatial light modulator even when a condition of input light is changed. In the LCOS phase modulating apparatus, an input unit inputs the condition of the input light, and a processing unit sets an input value for each pixel. A correction value deriving unit determines a correction condition according to the condition of the input light. A control input value converting unit converts the input value set for each pixel into a corrected input value based on the correction condition. An LUT processing unit converts the corrected input value into a voltage value, and drives each pixel by using a drive voltage equivalent to the converted voltage value. | 02-06-2014 |
20140232766 | APPARATUS CONVERTING INPUT VALUE TO CONTROL VALUE, DRIVING PIXEL BASED ON CONTROL VALUE, AND MODULATING LIGHT - In an apparatus for modulating light, an spatial light modulator includes a plurality of pixels and configured to modulate input light in response to a drive voltage for each of the pixels. An input value setting unit is configured to set an input value for the each of pixels. The input value is a digital value, an entire gray level of the digital value is “N”, and “N” is a natural number. A converting unit is configured to convert the input value to a control value. A control value is a digital value, an entire gray level of the control value is “M”, and “M” is a natural number greater than “N”. A driving unit is configured to convert the control value to a voltage value and drive the each of the pixels in response to the drive voltage corresponding to the voltage value. | 08-21-2014 |
20140293388 | LIGHT MODULATION CONTROL METHOD, CONTROL PROGRAM, CONTROL DEVICE AND LASER BEAM IRRADIATION DEVICE - In the control of light condensing irradiation of laser light using a spatial light modulator, the number of wavelengths, a value of each wavelength, and incident conditions of the laser light are acquired, the number of light condensing points, and a light condensing position, a wavelength, and a light condensing intensity on each light condensing point are set, and a distortion phase pattern provided in an optical system including the spatial light modulator to the laser light is derived. Then, a modulation pattern presented in the spatial light modulator is designed in consideration of the distortion phase pattern. Further, in the design of a modulation pattern, a design method focusing on an effect by a phase value of one pixel is used, and when evaluating a light condensing state, a propagation function to which a distortion phase pattern is added is used. | 10-02-2014 |
20140307299 | LIGHT MODULATION CONTROL METHOD, CONTROL PROGRAM, CONTROL DEVICE AND LASER BEAM IRRADIATION DEVICE - In the control of light condensing irradiation of laser light using a spatial light modulator, the number of wavelengths, a value of each wavelength, and incident conditions of the laser light are acquired, the number of light condensing points, and a light condensing position, a wavelength, and a light condensing intensity on each light condensing point are set, and a light condensing control pattern is set for each light condensing point. Then, a modulation pattern presented in the spatial light modulator is designed in consideration of the light condensing control pattern. Further, in the design of a modulation pattern, a design method focusing on an effect by a phase value of one pixel is used, and when evaluating a light condensing state, a propagation function to which a phase pattern opposite to the light condensing control pattern is added is used. | 10-16-2014 |
20150049376 | BEAM-SHAPING DEVICE - A beam shaping device includes a first phase modulation unit including a phase-modulation type SLM, and displaying a first phase pattern for modulating a phase of input light, a second phase modulation unit including a phase-modulation type SLM, being optically coupled to the first phase modulation unit, and displaying a second phase pattern for further modulating a phase of light phase-modulated by the first phase modulation unit, and a control unit providing the first and second phase patterns to the first and second phase modulation units, respectively. The first and second phase patterns are phase patterns for approximating an intensity distribution and a phase distribution of light output from the second phase modulation unit, to predetermined distributions. | 02-19-2015 |
20150085373 | ZOOM LENS - A zoom lens includes a first lens unit including one of an SLM or a VFL, a second lens unit being optically coupled between the first lens unit and a focal plane and including one of an SLM or a VFL, and a control unit controlling focal lengths of the first and second lens units. A distance between the first lens unit and the second lens unit and a distance between the second lens unit and the focal plane are invariable. The control unit changes a magnification ratio of the zoom lens by changing the focal lengths of the first and second lens units. | 03-26-2015 |
20150131142 | BEAM EXPANDER - A beam expander includes a first lens unit including one of an SLM or a VFL, a second lens unit being optically coupled to the first lens unit and including one of an SLM or a VFL, and a control unit controlling focal lengths of the first and second lens units. A distance between the first and second lens units is invariable. The control unit controls the focal lengths of the first and second lens units such that a light diameter D | 05-14-2015 |
20150185523 | LIGHT MODULATION METHOD, LIGHT MODULATION PROGRAM, LIGHT MODULATION DEVICE, AND ILLUMINATION DEVICE - A light modulation device includes a phase-modulation type spatial light modulator having a plurality of two-dimensionally arrayed pixels and modulating a phase of input light for each pixel with a modulation pattern, a modulation pattern setting unit setting a target modulation pattern for modulating the phase of the light, a correction coefficient setting unit setting a correction coefficient α of α≧1 according to pixel structure characteristics of the spatial light modulator and pattern characteristics of the target modulation pattern, and a modulation pattern correction unit determining a corrected modulation pattern to be presented on the plurality of pixels of the spatial light modulator by multiplying the target modulation pattern by the correction coefficient α. | 07-02-2015 |
20150219937 | OPTICAL MODULATION CONTROL METHOD, CONTROL PROGRAM, CONTROL DEVICE, AND LASER LIGHT IRRADIATION DEVICE - In controlling light condensing irradiation with laser light using a spatial light modulator, an incident pattern of the laser light and respective refractive indices of first and second propagation media on a propagation path are acquired, the number of light condensing points, and the light condensing position and the light condensing intensity at each light condensing point are set, an aberration condition caused by the first and second propagation media is derived, and by taking the aberration condition into account, a modulation pattern to be presented in the spatial light modulator is designed. Further, in designing the modulation pattern, a design method focusing on an effect of a phase value at one pixel is used, and in evaluating the light condensing state at the light condensing point, a propagation function that takes the aberration condition into account is employed. | 08-06-2015 |
20150309472 | PHASE MODULATION METHOD AND PHASE MODULATING DEVICE - A phase distribution is calculated such that modulated light has a predetermined intensity distribution on a target plane and displayed on a phase modulation plane, readout light enters the phase modulation plane so as to generate the modulated light. When calculating the phase distribution, a region on the phase modulation plane is divided into N regions A | 10-29-2015 |
20150346685 | DEVICE FOR GENERATING PATTERNED LIGHT INTERFERENCE - A patterned light interference generating device | 12-03-2015 |
20160048069 | OPTICAL MODULE, OPTICAL OBSERVATION DEVICE, AND LIGHT EXPOSURE DEVICE - An optical module ( | 02-18-2016 |
20160054576 | OPTICAL MODULE AND OBSERVATION DEVICE - An optical module ( | 02-25-2016 |
20160062128 | OPTICAL MODULE AND LIGHT EXPOSURE DEVICE - An optical module ( | 03-03-2016 |
20160063940 | APPARATUS HAVING SPATIAL LIGHT MODULATOR AND CONVERTING UNIT CONVERTING INPUT VALUE TO CONTROL VALUE TO CONTROL SPATIAL LIGHT MODULATOR - In an apparatus for modulating light, an spatial light modulator includes a plurality of pixels and configured to modulate input light in response to a drive voltage for each of the pixels. An input value setting unit is configured to set an input value for the each of pixels. The input value is a digital value, an entire gray level of the digital value is “N”, and “N” is a natural number. A converting unit is configured to convert the input value to a control value. A control value is a digital value, an entire gray level of the control value is “M”, and “M” is a natural number greater than “N”. A driving unit is configured to convert the control value to a voltage value and drive the each of the pixels in response to the drive voltage corresponding to the voltage value. | 03-03-2016 |
Patent application number | Description | Published |
20130037868 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed over the first nitride semiconductor layer; and a gate electrode facing the second nitride semiconductor layer via a gate insulating film. Because the second nitride semiconductor layer is formed by stacking plural semiconductor layers with their Al composition ratios different from each other, the Al composition ratio of the second nitride semiconductor layer changes stepwise. The semiconductor layers forming the second nitride semiconductor layer are polarized in the same direction so that, among the semiconductor layers, a semiconductor layer nearer to the gate electrode has higher (or lower) intensity of polarization. In other words, the intensities of polarization of the semiconductor layers change with an inclination based on their distances from the gate electrode so that, at each interface between two semiconductor layers, the amount of negative charge becomes larger than that of positive charge. | 02-14-2013 |
20130069071 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Compression strains are generated at an interface between the cap layer and the barrier layer and an interface between the channel layer and the buffer layer and a tensile strain is generated at an interface between the barrier layer and the channel layer. Therefore, negative charge is higher than positive charge at the interface between the cap layer and the barrier layer and the interface between the channel layer and the buffer layer, while positive charge is higher than negative charge at the interface between the barrier layer and the channel. The channel layer has a stacked layer structure of a first layer, a second layer, and a third layer. The second layer has a higher electron affinity than those of the first layer and the third layer. | 03-21-2013 |
20130222607 | Camera device, camera system and camera calibration method - An object of the present invention is to simplify a calibration operation of a camera and to shorten a time necessary for calibration. A camera calibration device | 08-29-2013 |
20140015019 | SEMICONDUCTOR DEVICE - The reliability of a field effect transistor made of a nitride semiconductor material is improved. An ohmic electrode includes a plurality of unit electrodes isolated to be separated from each other. With this configuration, an on-state current can be prevented from flowing in the unit electrodes in a y-axial direction (negative direction). Further, in the respective unit electrodes, a current density of the on-state current flowing in the y-axial direction (negative direction) can be prevented from increasing. As a result, an electromigration resistance of the ohmic electrode can be improved. | 01-16-2014 |
20140084300 | SEMICONDUCTOR DEVICE - A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In | 03-27-2014 |
20140160292 | CALIBRATION OPERATION DEVICE AND CALIBRATION OPERATION METHOD - An object of the present invention is to simplify a calibration operation of a camera and to shorten a time necessary for calibration. A calibration operation device | 06-12-2014 |
20150076511 | SEMICONDUCTOR DEVICE - A field effect transistor includes a substrate and a semiconductor layer provided on the substrate, wherein the semiconductor layer includes a lower barrier layer provided on the substrate, Ga-face grown, lattice relaxed, and having a composition In | 03-19-2015 |
20150145004 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - The characteristics of a semiconductor device are improved. A semiconductor device is formed so as to have a channel layer formed over a substrate, a barrier layer, a trench penetrating through the barrier layer in an opening region, and reaching some point of the channel layer, a gate electrode arranged in the trench via a gate insulation film, and an insulation film formed over the barrier layer outside the opening region. Then, the insulation film has a lamination structure of a Si-rich silicon nitride film, and a N-rich silicon nitride film situated thereunder. Thus, the upper layer of the insulation film is set as the Si-rich silicon nitride film. This enables the improvement of the breakdown voltage, and further, enables the improvement of the etching resistance. Whereas, the lower layer of the insulation film is set as the N-rich silicon nitride film. This can suppress collapse. | 05-28-2015 |
20150221757 | SEMICONDUCTOR DEVICE - Characteristics of a semiconductor device are improved. The semiconductor device is configured to provide a trench that penetrates a barrier layer, and reaches a middle portion of a channel layer among an n+ layer, an n-type layer, a p-type layer, the channel layer, and the barrier layer which are formed above a substrate, a gate electrode arranged within the groove through a gate insulating film, and a source electrode and a drain electrode which are formed above the barrier layer on both sides of the gate electrode. The n-type layer and the drain electrode are electrically coupled to each other by a connection portion that reaches the n+ layer. The p-type layer and the source electrode are electrically coupled to each other by a connection portion that reaches the p-type layer. A diode including a p-type layer and an n-type layer is provided between the source electrode and the drain electrode, to thereby prevent the breaking of an element caused by an avalanche breakdown. | 08-06-2015 |
20150221758 | SEMICONDUCTOR DEVICE - To provide a semiconductor device having improved characteristics. The semiconductor device has, over a substrate thereof, a first buffer layer (GaN), a second buffer layer (AlGaN), a channel layer, and a barrier layer, a trench penetrating through the barrier layer and reaching the middle of the channel layer, a gate electrode placed in the trench via a gate insulating film, and a source electrode and a drain electrode formed on both sides of the gate electrode respectively. By a coupling portion in a through-hole reaching the first buffer layer, the buffer layer and the source electrode are electrically coupled to each other. Due to a two-dimensional electron gas produced in the vicinity of the interface between these two buffer layers, the semiconductor device can have an increased threshold voltage and improved normally-off characteristics. | 08-06-2015 |
20160079409 | SEMICONDUCTOR DEVICE - A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on the lower barrier layer, an electron supplying layer provided on the channel layer, a source electrode and a drain electrode provided on the electron layer, and a gate electrode provided between the source electrode and the drain electrode. The lower barrier layer includes a composition of In | 03-17-2016 |