Patent application number | Description | Published |
20080293950 | Production Process of Compound Having Anti-Hcv Action and Intermediate Thereof - A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided. | 11-27-2008 |
20090082266 | CONJUGATE OF WATER-SOLUBLE HYALURONIC ACID MODIFICATION PRODUCT WITH GLP-A ANALOGUE - To provide a GLP-1 analogue long-acting prophylactic or therapeutic agent for diabetes, diabetic complications and/or obesity due to diabetes which provides an extended half-life of a GLP-1 analogue in the blood to prevent frequent administration, and is biodegradable and safe. | 03-26-2009 |
20090093414 | Hyaluronic Acid-Methotrexate Conjugate - An object of the present invention is to provide a hyaluronic acid-methotrexate conjugate useful as a therapeutic drug for joint disorders. There is provided a hyaluronic acid-methotrexate conjugate useful for the treatment of joint disorders, wherein methotrexate is conjugated with a hydroxy group of hyaluronic acid through a linker containing a peptide chain consisting of 1 to 8 amino acids, and the linker is conjugated with the hyaluronic acid through a carbamate group. | 04-09-2009 |
20100152456 | Intermediate compound for synthesis of viridiofungin a derivative - A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided. | 06-17-2010 |
20100152457 | Intermediate compound for synthesis of viridiofungin a derivative - A method whereby a compound having HCV replication inhibitory activity and desired optical activity can be synthesized selectively and at high yield in a small number of steps by using a compound having a specific chiral auxiliary as a starting compound is provided. | 06-17-2010 |
Patent application number | Description | Published |
20090194879 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique, and a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer. A space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers. | 08-06-2009 |
20110275213 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique, and a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer. A space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers. | 11-10-2011 |
20130235666 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACURING THE SAME - A nonvolatile semiconductor memory device according to an embodiment includes: a memory cell array in which a plurality of NAND cell units are arranged, the NAND cell units including a plurality of memory cells, and select gate transistors, the memory cell including a semiconductor layer, a gate insulating film, a charge accumulation layer, and a control gate; and a control circuit. The control circuit adjusts a write condition of each of the memory cells in accordance with write data to each of the memory cells and memory cells adjacent to the memory cells within the data to be written. | 09-12-2013 |
Patent application number | Description | Published |
20080239934 | Optical recording medium and recording film material - An optical recording medium is provided which includes two or more information layers in which an Sb-based eutectic material is used as the material for a recording film of a translucent information layer. There is also provided a recording film material for the optical recording medium. The translucent information layer is configured to include a recording film formed of a phase change material Sb | 10-02-2008 |
20080310279 | Rewritable phase-change optical recording medium - A rewritable phase-change optical recording medium is provided, which includes a substrate, a first information layer, a spacer layer, a second information layer, and a cover layer. The second information layer includes a recording film containing Sb as a main component and V or V and In as second components. When an amorphous mark formed in the recording film is irradiated with a reproduction beam, crystallization of the amorphous mark occurs only in a central portion in the width direction of the amorphous mark. The width direction is orthogonal to the scanning direction of the laser beam. The recording film is formed of a material that exhibits a change in degree of modulation of 5% or less when recorded information is repeatedly reproduced. The change in degree of modulation is a change from when the number of times of reproduction is 100,000 to when it is 400,000. | 12-18-2008 |
20080317430 | METHOD FOR CONTROLLING RECORDER AND APPARATUS FOR CONTROLLING RECORDER - A method and apparatus for controlling a video camera recorder or the like, capable of flexibly meeting user demands for image quality, recording time, etc. When recording information on a rewritable optical recording medium, the recording mode for the optical recording medium is selected at least from between write-once and rewritable based on a set recording rate. Before recording, the recording status of the optical recording medium is also determined at least between an unrecorded area and a recorded area. | 12-25-2008 |
20090122689 | OPTICAL READING METHOD AND OPTICAL READING SYSTEM - An optical reading method which suppresses variations in the reading quality of a low-reflection optical recording medium. The optical reading method is to read information from an optical recording medium by irradiating the medium with read laser light having a wavelength λ of 400 to 410 nm. In this method, an information recording layer of the optical recording medium is irradiated with the read laser light with an average read power P | 05-14-2009 |
20090135711 | INFORMATION READOUT METHOD FOR NON MASK LAYER TYPE OPTICAL INFORMATION MEDIUM - An information readout method for an optical information medium comprising an information recording layer having pits or recorded marks representative of information data involves the step of irradiating a laser beam to the information recording layer through an objective lens for providing readings of the pits or recorded marks. When the laser beam has a wavelength λ of 400 to 410 nm, the objective lens has a numerical aperture NA of 0.70 to 0.85, and the pits or recorded marks have a minimum size P | 05-28-2009 |
20130027160 | SINTERED MAGNET AND METHOD FOR PRODUCING THE SINTERED MAGNET - The present invention aims to ensure strength of a thin-walled sintered magnet. A sintered magnet is a ferrite sintered magnet made by sintering a magnetic material. A magnetic powder mixture obtained by mixing magnetic powder with a binder resin is injection-molded into a mold with a magnetic field applied thereto to produce a molded body, which is then sintered to produce the sintered magnet. The sintered magnet has a thickness of 3.5 mm or less in the position of center of gravity thereof. The sintered magnet has a surface roughness Rz of 0.1 or more and 2.5 μm or less. The surface roughness Rz is a 10 point average roughness. | 01-31-2013 |
20150080549 | PEPTIDE-COMPOUND CYCLIZATION METHOD - An object of the present invention is to provide methods of discovering drugs effective for tough targets, which have conventionally been discovered only with difficulty. The present invention relates to novel methods for cyclizing peptide compounds, and novel peptide compounds and libraries comprising the same, to achieve the above object. | 03-19-2015 |
Patent application number | Description | Published |
20140070304 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a nonvolatile memory device includes a memory cell string, a control gate, first and second insulating films. The memory cell string includes a semiconductor layer and a plurality of memory cells disposed on the semiconductor layer. The control gate is provided on each of the memory cells. The first insulating film covers each side surface of the memory cells, and a side surface of the control gate. The second insulating film covering an upper portion of the control gate is provided on each of two adjacent memory cells. A first air gap is disposed between the two adjacent memory cells and surround by the first insulating film and the second insulating film, and the semiconductor layer is exposed by the first gap, or thickness of an insulating film between the first gap and the semiconductor layer is thinner than the first insulating film. | 03-13-2014 |
20140284684 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a cell transistor, an extraction section, a guard ring, a first transistor, and a second transistor. The semiconductor substrate includes first, second, third, and fourth regions. The fourth region includes first and second portions. The cell transistor is provided on the first region and includes a first insulating film, a charge storage film, and a first electrode. The extraction section is provided on the second region and includes a second insulating film, and an extension electrode. The guard ring is provided on the third region and includes a third insulating. The first transistor is provided on the first portion and includes a fourth insulating, and a second electrode. The second transistor is provided on the second portion and includes a fifth insulating film, and a third electrode. | 09-25-2014 |
20150060994 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a non-volatile semiconductor memory device, includes: peripheral transistors including a second element isolation insulating film, a gate electrode, and a diffusion layer region, the second element isolation insulating film being configured to divide the semiconductor layer into at least two second semiconductor regions, the diffusion layer region being formed in the second semiconductor regions to be provided on two sides of the gate electrode; and a sidewall film provided at a side surface of the gate electrode. The second element isolation insulating film has a first portion and a second portion, the second portion is provided on two sides of the first portion, a width of a bottom portion of the first portion in an extension direction of the gate electrode is not more than twice a thickness of the sidewall film at a lower end of the sidewall film. | 03-05-2015 |