Michiru
Michiru Hirose, Kasugai-Shi JP
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20080206949 | APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device. | 08-28-2008 |
20080233705 | METHOD FOR SELECTIVELY FORMING ELECTRIC CONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess. | 09-25-2008 |
20100112776 | APPARATUS FOR FORMING CONDUCTOR, METHOD FOR FORMING CONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device. | 05-06-2010 |
Michiru Hogyoku, Kamakura-Shi JP
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20100329026 | SEMICONDUCTOR MEMORY DEVICE WITH CHARGE ACCUMULATION LAYER - According to one embodiment, a semiconductor memory device includes memory cells, first and second selection transistors, a source line, a temperature monitor, and a source line voltage controller. The memory cells are connected in series between a source of the first selection transistor and a drain of the second selection transistor. The temperature monitor monitors a temperature of the semiconductor substrate. The source line voltage controller applies a voltage to the source line, in a read operation, in such a manner that a potential difference between the source line and the semiconductor substrate increases according to a rise in the temperature monitored by the temperature monitor and that a reverse bias is applied between the source of the second selection transistor and the semiconductor substrate. | 12-30-2010 |
Michiru Hogyoku, Kanagawa-Ken JP
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20110228610 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND A PROGRAMMING METHOD THEREOF - A non-volatile semiconductor memory device according to one aspect of an embodiment of the present invention includes: a semiconductor substrate; an element region; a plurality of memory cell transistors which each include a control gate electrode; and programming means for programming data to a programming target memory cell transistor by applying a programming voltage to the programming target memory cell transistor. Moreover, the programming means applies a programming voltage incremented stepwise from an initial programming voltage, to the programming target memory cell transistor while applying a constant initial intermediate voltage to memory cell transistors adjacent to the programming target memory cell transistor. Thereafter, the programming means applies an intermediate voltage incremented stepwise from the initial intermediate voltage, to one of the respective memory cells adjacent to the programming target memory cell transistor, while applying a constant final programming voltage to the programming target memory cell transistor. | 09-22-2011 |
Michiru Hogyoku, Yokkaichi-Shi JP
Michiru Kamada, Tokyo JP
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20150336309 | LIQUID BLEND FOR REACTION INJECTION MOLDING, METHOD FOR PRODUCING REACTION INJECTION MOLDED BODY, AND REACTION INJECTION MOLDED BODY - The present invention provides: a reaction injection molding liquid mixture comprising a norbornene-based monomer, a metathesis polymerization catalyst that includes tungsten as a center metal, an activator, and an ether compound represented by a formula (1), wherein R | 11-26-2015 |
Michiru Kubata, Osaka-Shi JP
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20130045400 | REDOX FLOW BATTERY - Provided are a redox flow battery (RF battery) in which a positive electrode electrolyte and a negative electrode electrolyte are supplied to a battery cell including a positive electrode, a negative electrode, and a membrane, to charge and discharge the battery, and a method of operating the RF battery. The positive electrode electrolyte contains a manganese ion, or both of a manganese ion and a titanium ion. The negative electrode electrolyte contains at least one type of metal ion selected from a titanium ion, a vanadium ion, a chromium ion, a zinc ion, and a tin ion. The RF battery can have a high electromotive force and can suppress generation of a precipitation of MnO | 02-21-2013 |
20150221969 | ELECTROLYTE FOR REDOX FLOW BATTERY AND REDOX FLOW BATTERY - Provided is an electrolyte for a redox flow battery, the electrolyte allowing suppression of generation of precipitate during a battery reaction. In the electrolyte for a redox flow battery, the total concentration of impurity element ions contributing to generation of precipitate during a battery reaction is 220 mass ppm or less. In a case where the impurity element ions contributing to generation of precipitate include metal element ions, the total concentration of the metal element ions may be 195 mass ppm or less. In a case where the impurity element ions contributing to generation of precipitate include non-metal element ions, the total concentration of the non-metal element ions may be 21 mass ppm or less. | 08-06-2015 |
20150228997 | ELECTROLYTE FOR REDOX FLOW BATTERY AND REDOX FLOW BATTERY - Provided are an electrolyte for a redox flow battery, the electrolyte allowing suppression of generation of hydrogen during a battery reaction; and a redox flow battery including the electrolyte. In the electrolyte for a redox flow battery, the total concentration of platinum-group element ions is 4.5 mass ppm or less. The platinum-group element ions may satisfy in terms of concentration at least one of those described below: the concentration of rhodium ions is 1 mass ppm or less, the concentration of palladium ions is 1 mass ppm or less, the concentration of iridium ions is 1 mass ppm or less, and the concentration of platinum ions is 1 mass ppm or less. | 08-13-2015 |
20150325873 | ELECTROLYTE FOR REDOX FLOW BATTERY AND REDOX FLOW BATTERY - Provided are an electrolyte for a redox flow battery, the electrolyte allowing suppression of generation of precipitate and suppression of generation of hydrogen during a battery reaction; and a redox flow battery including the electrolyte. In the electrolyte for a redox flow battery, the total concentration of impurity element ions contributing to generation of precipitate during a battery reaction is 220 mass ppm or less, and the total concentration of platinum-group element ions is 4.5 mass ppm or less. In a case where the impurity element ions contributing to generation of precipitate include metal element ions, the total concentration of the metal element ions may be 195 mass ppm or less. | 11-12-2015 |
Michiru Kubata, Osaka JP
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20120045680 | REDOX FLOW BATTERY - A redox flow battery having a high electromotive force and capable of suppressing generation of a precipitation is provided. In a redox flow battery | 02-23-2012 |
20140377687 | REDOX FLOW SECONDARY BATTERY AND ELECTROLYTE MEMBRANE FOR REDOX FLOW SECONDARY BATTERY - An object of the present invention is to provide a redox flow secondary battery being low in the electric resistance and excellent in the current efficiency as well, and further having the durability. The present invention relates to an electrolyte membrane for a redox flow secondary battery, the electrolyte membrane containing an ion-exchange resin composition containing a fluorine-based polyelectrolyte polymer, and having an ion cluster diameter of 1.00 to 2.95 nm as measured in water at 25° C. by a small angle X-ray method, and to a redox flow secondary battery using the electrolyte membrane. | 12-25-2014 |
Michiru Sakamoto, Aichi JP
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20100196726 | MAGNESIUM ALLOY MATERIAL, AND METHOD FOR TREATMENT OF SURFACE OF MAGNESIUM ALLOY MATERIAL - A magnesium alloy material contains a complex made from a phosphate-containing magnesium, such as dittmarite and the like, and magnesium hydroxide, the complex being formed by a steam curing of the magnesium alloy material conducted using (i) at least one compound chosen among diammonium hydrogen phosphate, ammonium dihydrogen phosphate, and triammonium phosphate, and (ii) water. In this way, it is possible to provide a magnesium alloy material having excellent corrosion resistance, shock resistance and the like, and to provide a method for treatment of surface of magnesium alloy material allowing the manufacture of a magnesium alloy material having excellent corrosion resistance, shock resistance and the like. | 08-05-2010 |
Michiru Sakamoto, Saga JP
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20140220458 | MAGNESIUM FUEL CELL - The invention provides magnesium fuel cells which can prevent the self-discharge of negative electrode materials and can produce electricity stably for a long term. A magnesium fuel cell includes a negative electrode material including a magnesium alloy, and an electrolytic solution for eluting magnesium ions from the negative electrode material. The magnesium alloy contains aluminum and calcium. The electrolytic solution is preferably an aqueous sodium chloride solution, an aqueous sodium hydroxide solution, an aqueous sodium hydrogencarbonate solution, an aqueous sodium percarbonate solution, or a mixture including two or more of these solutions. | 08-07-2014 |
Michiru Sakamoto, Nagoya-Shi JP
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20100039692 | SWITCHABLE MIRROR ELEMENT, AND SWITCHABLE MIRROR COMPONENT AND INSULATING GLASS EACH INCORPORATING THE SWITCHABLE MIRROR ELEMENT - A switchable mirror element includes a switchable layer having a chromic property enabling the switchable layer to be reversibly changed from a transparent state by hydrogenation and a mirror state by dehydrogenation, and a catalytic layer disposed on the switchable layer and configured to promote hydrogenation or dehydrogenation in the switchable layer. The switchable layer includes an alloy of one or more metals from calcium, strontium, and barium, and magnesium. | 02-18-2010 |
Michiru Tanaka, Settsu-Shi JP
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20090305144 | ELECTROCHEMICAL DEVICE - There is provided an electrochemical device provided with an electrolytic solution comprising (I) a solvent for dissolving an electrolyte salt comprising (A) a fluorine-containing ether represented by the formula (1): | 12-10-2009 |
20100062344 | NON-AQUEOUS ELECTROLYTIC SOLUTION - There is provided a non-aqueous electrolytic solution comprising an electrolyte salt, a specific fluorine-containing solvent and a fluorine-containing cyclic carbonate represented by the formula (A1): | 03-11-2010 |
20110008681 | ELECTROLYTIC SOLUTION - There is provided an electrolytic solution causing no phase separation even at low temperatures, being excellent in flame retardancy and noncombustibility, assuring high solubility of an electrolyte salt, having a high discharge capacity, being excellent in charge-discharge cycle characteristics and being suitable for electrochemical devices such as lithium ion secondary batteries. The electrolytic solution comprises a solvent (I) for dissolving an electrolyte salt comprising a fluorine-containing ether (A) represented by the formula: Rf | 01-13-2011 |
Michiru Tanaka, Osaka JP
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20100033899 | ELECTRICAL DOUBLE LAYER CAPACITOR - The present invention provides an electrical double layer capacity comprising a non-aqueous electrolytic solution comprising (A) a solvent comprising a specific fluorine-containing cyclic carbonate and (B) an electrolyte salt comprising a cyclic quaternary onium salt comprising cyclic quaternary onium cation and PF | 02-11-2010 |
Michiru Ueda, Kashiba-Shi JP
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20080264528 | ROLLING, SLIDING PART AND PROCESS FOR PRODUCING SAME - A rolling, sliding part is made from a bearing steel, and the rolling, sliding surface thereof has a surface layer portion which is 56 to 64 in Rockwell C hardness, up to 12 vol. % in retained austenite content and 4 to 6 degrees in the X-ray half value width of martensite. Even if made from a common bearing steel, the rolling, sliding part is reduced in the likelihood of developing a WEA or like fatigue structure, consequently exhibiting a prolonged rolling, sliding life for use under severe conditions involving a high temperature, high speed, high load or high vibration. | 10-30-2008 |