Daval
Arjun Daval, Redmond, WA US
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20130311944 | HANDLES INTERACTIONS FOR HUMAN-COMPUTER INTERFACE - A system is disclosed for providing on-screen graphical handles to control interaction between a user and on-screen objects. A handle defines what actions a user may perform on the object, such as for example scrolling through a textual or graphical navigation menu. Affordances are provided to guide the user through the process of interacting with a handle. | 11-21-2013 |
Bertrand Daval, Clermont-Ferrand FR
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20120073723 | Tire with Improved Beads - Tire comprising two beads ( | 03-29-2012 |
20120073724 | Tire with Improved Beads - A tire comprising two beads ( | 03-29-2012 |
Bruno Daval, Chatillon FR
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20150016149 | Lighting Device - The invention relates to a lighting device comprising a light source, a light source support, and a cover that extends longitudinally along a longitudinal axis between a first end and a second end. Each of the first and second ends includes an opening and the light source support is adapted to be moved in part or in full through a said opening. The lighting device also has a closure member for closing at least one of the openings at the first and second ends, the closure member being movable between a closed position and an open position, and a connector ( | 01-15-2015 |
Christian Daval, Saint Cezaire Sur Siagne FR
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20110147532 | Device for Deploying and Aiming Structural Elements in a Space Environment - A device for deploying and aiming structural elements designed to be placed in Earth includes at least one locking/unlocking device making it possible to deactivate the first coupling mode and to activate a second coupling mode allowing a portion of the device to be aimed at a target. The device uses: a plurality of structural elements linked together by articulations, the assembly forming an articulated arm linked to a payload via a root section; the articulations having at least one pivoting connection making it possible to have two consecutive structural elements pivot relative to one another; a motor making it possible to activate at least one pivoting connection of an articulation; and a system for coupling the articulations making it possible to link the pivoting of all of the structural elements comprising a first coupling mode. | 06-23-2011 |
Christophe Daval, Choisy Le Roi FR
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20090304864 | POWDER OF FERMENTED MILK OR OF YOGURT WITH A HIGH DENSITY OF LACTIC FERMENTS - The present application relates to a fermented milk or yoghurt powder which contains very high contents of | 12-10-2009 |
20130202738 | Synergistic Fermentation of Lactobacillus Rhamnosus and Lactobacillus Paracasei Subsp Paracasei - The present invention relates to a process for preparing a fermented product by synergistic co-fermentation of | 08-08-2013 |
Nicolas Daval, Lumbin FR
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20120228672 | METHOD FOR FORMING A GE ON III/V-ON-INSULATOR STRUCTURE - The present invention concerns a method for forming a Semiconductor-On-Insulator structure that includes a semiconductor layer of III/V material by growing a relaxed germanium layer on a donor substrate; growing at least one layer of III/V material on the layer of germanium; forming a cleaving plane in the relaxed germanium layer; transferring a cleaved part of the donor substrate to a support substrate, with the cleaved part being a part of the donor substrate cleaved at the cleaving plane that includes the at least one layer of III/V material. The present invention also concerns a germanium on III/V-On-Insulator structure, a N Field-Effect Transistor (NFET), a method for manufacturing a NFET, a P Field-Effect Transistor (PFET), and a method for manufacturing a PFET. | 09-13-2012 |
Nicolas Daval, Pleasantville, NY US
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20110140230 | MANUFACTURE OF THIN SILICON-ON-INSULATOR (SOI) STRUCTURES - The present invention relates to a method of forming a SOI structure having a thin silicon layer by forming a first etch stop layer on a donor substrate, forming a second etch stop layer on the first etch stop layer, wherein the material of the second etch stop layer differs from the material of the first etch stop layer, forming a thin silicon layer on the second etch stop layer, preferably by epitaxy, and bonding the intermediate structure to a target substrate, followed by detaching the donor substrate by splitting initiated in the first etch stop layer at a weakened region and removing the remaining material of the etch stop layers to produce a final ETSOI structure. The invention also relates to the ETSOI structure produces by the described method. | 06-16-2011 |
20110183493 | PROCESS FOR MANUFACTURING A STRUCTURE COMPRISING A GERMANIUM LAYER ON A SUBSTRATE - The present invention relates to a process for manufacturing a structure comprising a germanium layer ( | 07-28-2011 |
20120091100 | ETCHANT FOR CONTROLLED ETCHING OF GE AND GE-RICH SILICON GERMANIUM ALLOYS - The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application. | 04-19-2012 |
20120228689 | WAFER WITH INTRINSIC SEMICONDUCTOR LAYER - The present invention relates to a method for the manufacture of a wafer by providing a doped layer on a semiconductor substrate; providing a first semiconductor layer on the doped layer; providing a buried oxide layer on the first semiconductor layer; and providing a second semiconductor layer on the buried oxide layer to form a wafer having a buried oxide layer and a doped layer beneath the buried oxide layer. The invention also relates to the wafer that is produced by the new method. | 09-13-2012 |
20130146805 | ETCHANT FOR CONTROLLED ETCHING OF GE AND GE-RICH SILICON GERMANIUM ALLOYS - The present disclosure provides a chemical etchant which is capable of removing Ge and Ge-rich SiGe alloys in a controlled manner. The chemical etchant of the present disclosure includes a mixture of a halogen-containing acid, hydrogen peroxide, and water. Water is present in the mixture in an amount of greater than 90% by volume of the entire mixture. The present disclosure also provides a method of making such a chemical etchant. The method includes mixing, in any order, a halogen-containing acid and hydrogen peroxide to provide a halogen-containing acid/hydrogen peroxide mixture, and adding water to the halogen-containing acid/hydrogen peroxide mixture. Also disclosed is a method of etching a Ge or Ge-rich SiGe alloy utilizing the chemical etchant of the present application. | 06-13-2013 |
Nicolas Daval, Grenoble FR
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20090023267 | METHOD OF REDUCING ROUGHNESS OF A THICK INSULATING LAYER - A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate, and then smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radiofrequency generator applying to the insulator layer a power density greater than 0.6 W/cm | 01-22-2009 |
Romary Georges Marcel Daval, Beaumont FR
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20160023265 | METHOD OF MANUFACTURING PRESSURE VESSEL LINERS - A method of manufacturing a liner for use in a pressure vessel includes a cold drawing process that shapes a transition zone ( | 01-28-2016 |