Patent application number | Description | Published |
20100048960 | PROCESS FOR PREPARING ISOPROPANOL AND 2-BUTANOL FROM THE CORRESPONDING ALKANES - A process for preparing alkanols (I) selected from the group consisting of isopropanol and 2-butanol from the corresponding alkanes (II) selected from the group consisting of propane and n-butane, comprising the steps of:
| 02-25-2010 |
20110027778 | COMPOSITION COMPRISING AN OLIGONUCLEOTIDE MIXTURE FOR IMPROVED DETECTION OF HUMAN PAPILLOMAVIRUS GENOTYPES - The present invention relates to a composition comprising an oligonucleotide mixture. Moreover, the present invention relates to the use of said oligonucleotide mixture for diagnosing different HPV genotypes in a sample of a subject. Further encompassed is a method for diagnosing different HPV genotypes in a sample of a subject and a kit carrying out said method. | 02-03-2011 |
20110091885 | COMPOSITION COMPRISING AN OLIGONUCLEOTIDE MIXTURE FOR THE DETECTION OF CONTAMINATIONS IN CELL CULTURES - The present invention relates to a method for determining contaminations in a cell culture sample comprising the steps of: a) contacting a sample of a cell culture suspected to comprise contaminations with a composition comprising oligonucleotides under conditions which allow for amplification of polynucleotides, wherein said oligonucleotides comprise oligonucleotides of at least three different groups of oligonucleotides, and b) determining the contaminations based on the amplified polynucleotides obtained by using the oligonucleotide groups of step (a). Moreover, the invention relates to a composition comprising an oligonucleotide mixture. Further encompassed by the present invention is a composition comprising a probe oligonucleotide mixture. Finally, the present invention also relates to kits comprising said oligonucleotide mixtures. | 04-21-2011 |
20110137097 | PROCESS FOR ISOMERIZING A SATURATED, BRANCHED AND CYCLIC HYDROCARBON - A process for isomerizing a saturated, branched and cyclic hydrocarbon, in which a tertiary carbon atom of the hydrocarbon is converted to a secondary carbon atom in the course of isomerization, by performing the isomerization in the presence of a superacidic ionic liquid comprising an organic cation and an inorganic anion, where the anion is a superacidic aluminum trichloride-Lewis base adduct, and of a copper(II) compound. | 06-09-2011 |
20110137098 | PROCESS FOR ISOMERIZING A SATURATED HYDROCARBON - A process for isomerizing a saturated hydrocarbon, by performing the isomerization in the presence of a superacidic ionic liquid comprising an organic cation and an inorganic anion, where the anion is a superacidic aluminum trichloride-Lewis base adduct, and of an olefin. | 06-09-2011 |
20110275059 | Diagnostic Transcript and Splice Patterns of HR-HPV in Different Cervical Lesions - The present invention relates to a method for differentiating in a subject with HR-HPV between a severe form of HR-HPV infection and a mild form of HR-HPV infection. It further is concerned with a composition comprising a probe oligonucleotide mixture, a device, and a kit for use in conjunction with the method of the invention. | 11-10-2011 |
20120040334 | Diagnostic Transcript and Splice Patterns of HPV16 in Different Cervical Lesions - The present invention relates to a method for differentiating in a subject with HPV16 between (i) a severe form of HPV16 infection and (ii) a mild form of HPV16 infection based on determining the amount of a first gene product and a second gene product in a sample of a subject and calculating a ratio of the amount of said first gene product and the amount of said second gene product. Further envisaged by the present invention is a composition comprising an oligonucleotide mixture. Also envisaged by the present invention are a kit and a device adapted to carry out the method of the present invention. | 02-16-2012 |
20120107797 | GENOTYPING OF BOVINE PAPILLOMAVIRUS GENOTYPES - The present invention is concerned with the provision of diagnostic means and methods. Specifically, it relates to a composition comprising oligonucleotides selected from at least two different groups of oligonucleotides, said groups comprising at least one pair of oligonucleotides being capable of specifically amplifying polynucleotides comprised by a Bovine Papillomavirus (BPV), said BPV being selected from the group consisting of BPV-1, BPV-2, BPV-3, BPV-4, BPV-5, BPV-6, BPV-7, BPV-8, BPV-9, BPV-10, and BAPV-11 as well as uses based on said composition and kits comprising it. Moreover, contemplated is a method for the simultaneous detection and/or identification of BPV types in a sample. | 05-03-2012 |
20130029319 | MEANS AND METHODS FOR PREDICTING THE RISK OF MORTALITY OF PATIENTS WITH HPV POSITIVE OROPHARYNGEAL SQUAMOUS CELL CANCER - The present invention relates to the field of diagnostic measures. In particular, the present invention relates to a method for predicting the risk of mortality in a subject suffering from low viral load HPV (human papillomavirus) positive oropharyngeal squamous cell cancer. The method is based on the determination of the amount of an E6* gene product and the amount an E1̂E4 gene product of HPV in a sample from said subject. Moreover, the method is based on determining the presence of absence of an E1C gene product of HPV. The present invention further relates to a method for predicting the risk of mortality in a subject suffering from HPV (human papillomavirus) positive oropharyngeal squamous cell cancer based on the determination of copy number of HPV per cancer cell. | 01-31-2013 |
20130116136 | PROBES FOR GENOTYPING LOW-RISK-HPV - The current invention is concerned with a composition comprising at least one probe oligonucleotide each for the nucleotide sequences of the invention, said probe oligonucleotides specifically hybridizing to the sense strand or the antisense strand of said nucleotide sequences. Moreover, the present invention relates to a method for the identification of low-risk HPV types in a sample comprising the steps of a) contacting a sample with an amplification composition allowing amplification of at least one region of the HPV genome specifically hybridizing to at least one of the probe oligonucleotides of the current invention under conditions which allow for the amplification of polynucleotides and b) identifying low-risk HPV genotypes in said sample based on the amplified polynucleotides obtained in step a) by hybridizing the amplified polynucleotides with at least one labelled probe oligonucleotide of the current invention while said amplified polynucleotides are present in the same reaction container. The invention also relates to the use of a composition of the current invention for identifying low-risk HPV hi a sample and to a kit comprising the composition of the invention and/or adopted for carrying out the method of the invention and an instruction manual. | 05-09-2013 |
20140018588 | ISOMERIZATION PROCESS FOR HYDROCARBONS WITH RECYCLING OF HYDROGEN HALIDES - The present invention relates to a process for isomerizing at least one hydrocarbon in the presence of an acidic ionic liquid and at least one hydrogen halide (HX) in an apparatus (V | 01-16-2014 |
20140024875 | PROCESS FOR TREATING AN OUTPUT FROM A HYDROCARBON CONVERSION WITH REMOVAL OF HYDROGEN HALIDES AND SUBSEQUENT WASH - The present invention relates to a process for treating an output from a hydrocarbon conversion, wherein the hydrocarbon conversion is performed in the presence of an acidic ionic liquid. The hydrocarbon conversion is preferably an isomerization. First of all, the hydrogen halide is drawn off in an apparatus from a mixture which originates from the hydrocarbon conversion and comprises at least one hydrocarbon and at least one hydrogen halide, and then the mixture depleted of hydrogen halide is subjected to a wash. | 01-23-2014 |
20140114099 | PROCESS FOR PREPARING CYCLOHEXANE WITH STARTING MATERIALS ORIGINATING FROM A STEAMCRACKING PROCESS - The present invention relates to a process for preparing cyclohexane by isomerizing a hydrocarbon mixture (HM | 04-24-2014 |
20140114100 | NOVEL PROCESS FOR PREPARING CYCLOHEXANE FROM METHYLCYCLOPENTANE AND BENZENE - The present invention relates to a process for preparing cyclohexane from methylcyclopentane (MCP) and benzene. In the context of the present invention, MCP and benzene are constituents of a hydrocarbon mixture (HM1) additionally comprising dimethylpentanes (DMP), possibly cyclohexane and at least one compound (low boiler) selected from acyclic C | 04-24-2014 |
20140114103 | PROCESS FOR PREPARING CYCLOHEXANE COMPRISING A PRIOR REMOVAL OF DIMETHYLPENTANES - The present invention relates to a process for preparing cyclohexane from benzene and/or methylcyclopentane (MCP) by hydrogenation or isomerization. Prior to the cyclohexane preparation, the dimethylpentanes (DMP) are removed in a distillation apparatus (D1) from a hydrocarbon mixture (HM1) comprising not only benzene and/or MCP but also DMP. If cyclohexane is already present in the hydrocarbon mixture (HM1), this cyclohexane is first removed together with DMP from benzene and/or MCP. This cyclohexane already present can be separated again from DMP in a downstream distillation step and recycled into the process for cyclohexane preparation. | 04-24-2014 |
20140128648 | HYDROCARBON CONVERSION PROCESS IN THE PRESENCE OF AN ACIDIC IONIC LIQUID WITH UPSTREAM HYDROGENATION - The present invention relates to a process for hydrocarbon conversion in the presence of an acidic ionic liquid. The hydrocarbon conversion is preferably an isomerization, especially an isomerization of methylcyclopentane (MOP) to cyclohexane. Prior to the hydrocarbon conversion, a hydrogenation is performed, preference being given to hydrogenating benzene to cyclohexane. The cyclohexane obtained in the hydrogenation and/or isomerization is preferably isolated from the process. In a preferred embodiment of the present invention, the hydrogenation is followed and the hydrocarbon conversion, especially the isomerization, is preceded by distillative removal of low boilers, especially C | 05-08-2014 |
Patent application number | Description | Published |
20080237701 | SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING IT - A semiconductor component includes a semiconductor body having an edge with an edge zone of a first conductivity type. Charge compensation regions of a second conductivity type are embedded into the edge zone, with the charge compensation regions extending from a top side of the semiconductor component vertically into the semiconductor body. For the number N | 10-02-2008 |
20130224921 | LATERAL TRENCH TRANSISTOR, AS WELL AS A METHOD FOR ITS PRODUCTION - A method for production of doped semiconductor regions in a semiconductor body of a lateral trench transistor includes forming a trench in the semiconductor body and introducing dopants into at least one area of the semiconductor body that is adjacent to the trench, by carrying out a process in which dopants enter the at least one area through inner walls of the trench. | 08-29-2013 |
20140117437 | Super Junction Semiconductor Device Comprising a Cell Area and an Edge Area - A super junction semiconductor device may include one or more doped zones in a cell area. A drift layer is provided between a doped layer of a first conductivity type and the one or more doped zones. The drift layer includes first regions of the first conductivity type and second regions of a second conductivity type, which is the opposite of the first conductivity type. In an edge area that surrounds the cell area, the first regions may include first portions separating the second regions in a first direction and second portions separating the second regions in a second direction orthogonal to the first direction. The first and second portions are arranged such that a longest second region in the edge area is at most half as long as a dimension of the edge area parallel to the longest second region. | 05-01-2014 |
20140124851 | Radiation-Hardened Power Semiconductor Devices and Methods of Forming Them - According to an embodiment, a method of forming a power semiconductor device is provided. The method includes providing a semiconductor substrate and forming an epitaxial layer on the semiconductor substrate. The epitaxial layer includes a body region, a source region, and a drift region. The method further includes forming a dielectric layer on the epitaxial layer. The dielectric layer is formed thicker above a drift region of the epitaxial layer than above at least part of the body region and the dielectric layer is formed at a temperature less than 950° C. | 05-08-2014 |
20140327069 | Semiconductor Device with a Super Junction Structure Based On a Compensation Structure with Compensation Layers and Having a Compensation Rate Gradient - A super junction structure is formed in a semiconductor portion of a super junction semiconductor device. The super junction structure includes a compensation structure with a first compensation layer of a first conductivity type and a second compensation layer of a complementary second conductivity type. The compensation structure lines at least sidewall portions of compensation trenches that extend between semiconductor mesas along a vertical direction perpendicular to a first surface of the semiconductor portion. Within the super junction structure and a pedestal layer that may adjoin the super junction structure, a sign of a lateral compensation rate changes along the vertical direction resulting in a local peak of a vertical electric field gradient and to improved avalanche ruggedness. | 11-06-2014 |
20140327104 | Semiconductor Device with a Super Junction Structure with Compensation Layers and a Dielectric Layer - A super junction semiconductor device includes a layered compensation structure with an n-type compensation layer and a p-type compensation layer, a dielectric layer facing the p-type layer, and an intermediate layer interposed between the dielectric layer and the p-type compensation layer. The layered compensation structure and the intermediate layer are provided such that when a reverse blocking voltage is applied between the n-type and p-type compensation layers, holes accelerated in the direction of the dielectric layer have insufficient energy to be absorbed and incorporated into the dielectric material. Since the dielectric layer absorbs and incorporates significantly less holes than without the intermediate layer, the breakdown voltage remains stable over a long operation time. | 11-06-2014 |
20140332885 | Trench Transistor Having a Doped Semiconductor Region - A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region. | 11-13-2014 |
20150021670 | Charge Compensation Semiconductor Devices - A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate with second conductivity type compensation regions. The drift portions contact the drain metallization and have a first maximum doping concentration. The compensation regions are in Ohmic contact with the source metallization. The peripheral area includes a first edge termination region and a second semiconductor region in Ohmic contact with the drift portions having a second maximum doping of the first conductivity type which lower than the first maximum doping concentration by a factor of ten. The first edge termination region of the second conductivity type adjoins the second semiconductor region and is in Ohmic contact with the source metallization. | 01-22-2015 |
20150076597 | SEMICONDUCTOR COMPONENT HAVING A PASSIVATION LAYER AND PRODUCTION METHOD - A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations. | 03-19-2015 |