Patent application number | Description | Published |
20090302502 | PROCESS OF PRODUCING LIQUID DISCHARGE HEAD - Provided is a process of producing a liquid discharge head having a substrate, a passage-forming member, and a patterned layer. The process includes providing a resin layer on a substrate; providing a resist pattern on the resin layer for patterning the resin layer; forming a patterned layer by patterning the resin layer using the resist pattern as a mask; providing a layer for forming a passage pattern having a shape of passage on the resist pattern lying on the patterned layer; forming a passage pattern by patterning the layer for forming a passage pattern; removing the resist pattern; providing a passage-forming member so as to cover the passage pattern and the patterned layer; and removing the passage pattern to give the passage. | 12-10-2009 |
20090314742 | METHOD FOR PROCESSING SUBSTRATE AND METHOD FOR PRODUCING LIQUID EJECTION HEAD AND SUBSTRATE FOR LIQUID EJECTION HEAD - A method for processing a substrate includes preparing a substrate having a first layer on a first surface side thereof, the first layer having a material capable of suppressing transmission of laser light, processing the substrate with laser light from a second surface that is opposite the first surface of the substrate toward the first surface of the substrate, and allowing the laser light to reach the first layer to form a hole in the substrate, and performing etching of the substrate from the second surface through the hole. | 12-24-2009 |
20110020966 | METHOD FOR PROCESSING SILICON SUBSTRATE AND METHOD FOR PRODUCING SUBSTRATE FOR LIQUID EJECTING HEAD - A method for processing a silicon substrate includes preparing a first silicon substrate including an etching mask layer including first and second opening portions; forming a first recess in a portion of the silicon substrate corresponding to a region in the first opening portion; etching the silicon substrate by crystal anisotropic etching through the etching mask layer with an etching apparatus and an etchant, the etching proceeding in the first and second opening portions to form a through hole in a position corresponding to the first opening portion and to form a second recess in a position corresponding to the second opening portion; calculating an etching rate of the silicon substrate in terms of the etchant by using the second recess; and determining, by using the calculated etching rate, an etching condition for etching another silicon substrate with the etching apparatus after the etching of the first silicon substrate. | 01-27-2011 |
20110056079 | INK JET RECORDING HEAD AND MANUFACTURING METHOD OF INK JET RECORDING HEAD - An ink jet recording head includes a substrate provided with an energy generating element to generate energy used for discharging ink, a discharge port through which the ink is discharged, a supply port for supplying the ink, and an ink path formed on the substrate for making the discharge port and the supply port communicate with each other, wherein wall members forming the ink path are made of an inorganic material, and a space between adjacent ink paths is filled up by a metal layer. | 03-10-2011 |
20110102511 | MANUFACTURING METHOD FOR INK JET RECORDING HEAD CHIP, AND MANUFATURING METHOD FOR INK JET RECORDING HEAD - A manufacturing method for a substrate for an ink jet head, including formation of an ink supply port in a silicon substrate, the method includes a step of forming, on one side of the substrate, an etching mask layer having an opening at a position corresponding ink supply port; a step of forming unpenetrated holes through the opening of the etching mask layer in at least two rows in a longitudinal direction of the opening; and a step of forming the ink supply port by crystal anisotropic etching of the substrate in the opening. | 05-05-2011 |
20110199421 | CIRCUIT BOARD FOR INK JET HEAD, INK JET HEAD HAVING THE SAME, METHOD FOR CLEANING THE HEAD AND INK JET PRINTING APPARATUS USING THE HEAD - In an ink jet head using a thermal energy for ejecting ink, this invention aims to reliably and uniformly remove kogations deposited on a heat application portion in contact with the ink. To realize this objective, the upper protective layer is arranged in an area including the heat application portion so that it can be electrically connected to serve as an electrode which causes an electrochemical reaction with the ink. The upper protective layer is formed of a material containing a metal which is dissolved by the electrochemical reaction and which does not form, on heating, an oxide film which hinders the dissolution. With this arrangement, a reliable electrochemical reaction can be produced to dissolve a surface layer of the upper protective layer, thereby removing kogations on the heat application portion reliably and uniformly. | 08-18-2011 |
20120105537 | CIRCUIT BOARD FOR INK JET HEAD, INK JET HEAD HAVING THE SAME, METHOD FOR CLEANING THE HEAD AND INK JET PRINTING APPARATUS USING THE HEAD - In an ink jet head using a thermal energy for ejecting ink, this invention aims to reliably and uniformly remove kogations deposited on a heat application portion in contact with the ink. To realize this objective, the upper protective layer is arranged in an area including the heat application portion so that it can be electrically connected to serve as an electrode which causes an electrochemical reaction with the ink. The upper protective layer is formed of a material containing a metal which is dissolved by the electrochemical reaction and which does not form, on heating, an oxide film which hinders the dissolution. With this arrangement, a reliable electrochemical reaction can be produced to dissolve a surface layer of the upper protective layer, thereby removing kogations on the heat application portion reliably and uniformly. | 05-03-2012 |
20120120158 | LIQUID DISCHARGE HEAD - A liquid discharge head includes a plurality of nozzle arrays. A concave portion is formed on a back side of a head substrate, and all supply ports are formed in the bottom of the concave portion. The head substrate and a supporting member are bonded at the bottom of the concave portion so that the supply port and an introduction port communicate with each other. According to such a configuration, a ground contact area can be sufficiently secured, so that a liquid discharge head that is highly reliable and having high heat dissipation ability, and that can be manufactured with high productivity can be achieved. | 05-17-2012 |
20120231565 | PROCESS FOR PRODUCING A SUBSTRATE FOR A LIQUID EJECTION HEAD - Provided is a process for producing a substrate for a liquid ejection head, including forming a liquid supply port in a silicon substrate, the process including the steps of (a) forming an etch stop layer at a portion of a front surface of the silicon substrate at which portion the liquid supply port is to be formed; (b) performing dry etching using a Bosch process from a rear surface side of the silicon substrate up to the etch stop layer with use of an etching mask formed on a rear surface of the silicon substrate to thereby form the liquid supply port; and (c) simultaneously removing the etch stop layer and a deposition film formed inside the liquid supply port. | 09-13-2012 |
20130206723 | METHOD OF MANUFACTURING LIQUID EJECTION HEAD AND METHOD OF PROCESSING SUBSTRATE - A liquid ejection head includes a substrate having an ejection energy generating element formed at a first surface side thereof, a common liquid chamber formed at a second surface of the substrate, and a liquid supply port extending from the bottom of the common liquid chamber to the first surface. The liquid ejection head is manufactured by preparing a substrate having the common liquid chamber formed at the second surface side, then arranging a material to be filled in the common liquid chamber, subsequently forming an aperture in the filled material as corresponding to the liquid supply port to be formed, and thereafter forming the liquid supply port by reactive ion etching, using at least the filled material as a mask. | 08-15-2013 |
20140008322 | DRY ETCHING METHOD - According to one aspect of the present invention, there is provided a dry etching method which carries out patterning of a resin film provided on a substrate, by reactive ion etching using a resist mask, wherein a gas mixture containing CF | 01-09-2014 |
20140034604 | PROCESSES FOR PRODUCING SUBSTRATE WITH PIERCING APERTURE, SUBSTRATE FOR LIQUID EJECTION HEAD AND LIQUID EJECTION HEAD - The invention provides a process for producing a substrate with a piercing aperture, the piercing aperture being formed by conducting dry etching from the side of a second surface opposite to a first surface of a substrate to the first surface, the process comprising, in the following order, the steps of (a) forming a groove around a region where the piercing aperture is formed in the first surface of the substrate, (b) forming an etch-stop layer in the region where the piercing aperture is formed in the first surface of the substrate and in the interior of the groove, and (c) forming the piercing aperture by conducting the dry etching from the side of the second surface. | 02-06-2014 |
20140096385 | METHOD FOR PRODUCING LIQUID-EJECTION HEAD - A method for producing a liquid-ejection head includes the steps of: forming molds on or above a substrate, the molds being used as molding members for forming liquid chambers; forming a flow-passage-forming member by depositing an inorganic material on or above the substrate and the molds by chemical vapor deposition, the flow-passage-forming member having depressed portions each formed in an area between an adjacent pair of liquid-chamber side walls in which the molds are not formed; forming a photosensitive resin layer by depositing a photosensitive resin on the flow-passage-forming member and in the depressed portions; forming filling members in the depressed portions by grinding the photosensitive resin layer until the upper surface of an orifice plate is exposed; after grinding the photosensitive resin layer, forming ejection ports in the flow-passage-forming member; and, after forming the ejection ports, removing the molds. | 04-10-2014 |
20140300669 | LIQUID DISCHARGE HEAD, CLEANING METHOD FOR LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, AND SUBSTRATE FOR LIQUID DISCHARGE HEAD - A substrate for a liquid discharge head includes an upper protection film that covers at least a region corresponding to each of thermal energy generation elements. The upper protection film and at least one of the upper protection films adjacent to the upper protection film within a liquid chamber are respectively connected to different external electrodes, and a voltage can be applied therebetween via the different external electrodes. | 10-09-2014 |
20140363907 | PROCESSES FOR PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD - A process for producing a substrate for a liquid ejection head, including a step of forming a liquid supply port passing through a silicon substrate by dry etching, the step being a step of sequentially repeating the steps of (1) forming an etching protection film on the silicon substrate, (2) removing a bottom portion of the etching protection film, and (3) etching the silicon substrate, wherein a sheath formed in the step (2) is thicker than a sheath formed in the step (3). | 12-11-2014 |
20140368581 | LIQUID EJECTION HEAD SUBSTRATE AND LIQUID EJECTION HEAD - A liquid ejection head substrate includes a substrate, an element disposed on the substrate that generates thermal energy used for ejecting liquid, and a protective layer disposed at least at a position corresponding to the element. The protective layer contains iridium and has a density in the range of 21.0 g/cm | 12-18-2014 |
20150024605 | SUBSTRATE PROCESSING METHOD - A substrate processing method for forming a through-hole in a substrate by reactive ion etching includes preparing a substrate that has a first surface and a second surface and on the first surface side of which a first layer and a second layer are disposed, the second surface being on the opposite side to the first surface, the second layer covering the first layer; and performing reactive ion etching on the substrate from the second surface to form a through-hole extending through the substrate from the first surface to the second surface, the reactive ion etching being performed to reach the first layer. The etching rate of the second layer for the reactive ion etching is lower than that of the first layer. | 01-22-2015 |
20150111321 | METHOD FOR PROCESSING SILICON SUBSTRATE - A method for processing a silicon substrate, comprising the steps of providing a silicon substrate having a first surface and a second surface, forming a non-penetrated hole extending from the first surface toward the second surface side in the silicon substrate, sticking a sealing tape comprising a support member and an adhesive layer on the first surface and filling at least part of the non-penetrated hole with the adhesive layer, performing reactive ion etching from the second surface toward the first surface side to allow the reactive ion etching to reach the adhesive layer filled in the non-penetrated hole and to expose the adhesive layer, and peeling the sealing tape from the silicon substrate to form a through hole in the silicon substrate. | 04-23-2015 |
20150328896 | SUBSTRATE PROCESSING METHOD AND METHOD OF MANUFACTURING SUBSTRATE FOR LIQUID DISCHARGE HEAD - A substrate processing method includes forming a first hole in a first surface of a silicon substrate to have a depth that it does not extend through the substrate and forming a second hole in a second surface to make the second hole to communicate with the first hole, so that a through hole formed of the first and second holes is formed in the substrate. The process of forming the second hole includes forming a communication portion wider than an opening of the first hole between the first and second holes after the second hole has been made to communicate with the first hole by dry etching. | 11-19-2015 |
20150360470 | METHOD OF FORMING THROUGH-SUBSTRATE - A method of forming a through-substrate having a first surface and a second surface opposite to the first surface, the method causing the first surface to communicate with the second surface through the substrate, the method including: a first step that forms a first trench from the first surface side of the substrate using dry etching, the first trench having side surfaces on which protective film is formed; and a second step that forms a second trench from the second surface side using dry etching, the second trench communicating with the first trench having the side surfaces on which the protective film is formed. | 12-17-2015 |