Patent application number | Description | Published |
20090071580 | Method of heat treating a superalloy component and an alloy component - A method of heat treating a superalloy component comprises solution heat treating the component at a temperature below the gamma prime solvus temperature to produce a fine grain structure in the component. Insulation is placed over a first area of the component to form an insulated assembly. The insulated assembly is placed in a furnace at a temperature below the solvus temperature and maintained at that temperature for a predetermined time to achieve a uniform temperature in the component. The temperature is increased at a predetermined rate to a temperature above the solvus temperature to maintain a fine grain structure in a first region, to produce a coarse grain structure in a second region and to produce a transitional structure in a third region between the first and second regions of the component. The insulated assembly is removed from the furnace when the second region of the component has been above the solvus temperature for a predetermined time and/or the first region of the component has reached a predetermined temperature. | 03-19-2009 |
20090087338 | Nickel base super alloy - A nickel base superalloy consisting of 20 to 40 wt % cobalt, 10 to 15 wt % chromium, 3 to 6 wt % molybdenum, 0 to 5 wt % tungsten, 2.5 to 4 wt % aluminium, 3.4 to 5 wt % titanium, 1.35 to 2.5 wt % tantalum, 0 to 2 wt % niobium, 0.5 to 1 wt % hafnium, 0 to 0.1 wt % zirconium, 0.01 to 0.05 wt % carbon, 0.01 to 0.05 wt % boron, 0 to 2 wt % silicon and the balance nickel plus incidental impurities. The gamma prime phase comprises (Ni/Co) | 04-02-2009 |
20090136381 | Ternary nickel eutectic alloy - A ternary nickel eutectic alloy consisting of 4.5 to 11 wt % chromium, 1 to 6 wt % cobalt, 1 to 4 wt % aluminium, 0 to 1.5 wt % titanium, 0 to 3 wt % tantalum, 16 to 22 wt % niobium, 0 to 3 wt % molybdenum, 0 to 4 wt % tungsten, 0 to 1 wt % hafnium, 0 to 0.1 wt % zirconium, 0 to 0.1 wt % silicon, 0.01 to 0.1 wt % carbon, 0 to 0.01 wt % boron and the balance nickel plus incidental impurities. | 05-28-2009 |
20100043929 | Single crystal component and a method of heat treating a single crystal component - A single crystal component comprising a first region and a second region. The component comprising a nickel base single crystal superalloy having a gamma phase matrix and gamma prime phase precipitates distributed in the gamma phase matrix. The first region of the component comprises a bi-modal distribution of gamma prime phase precipitates in the gamma phase matrix and the second region of the component comprising a uni-modal distribution of gamma prime phase precipitates in the gamma phase matrix. The uni-modal distribution of gamma prime phase precipitates consisting of primary cuboidal gamma prime phase precipitates and the bi-modal distribution of gamma prime phase precipitates consisting of primary cuboidal gamma prime phase precipitates and secondary spherical gamma prime phase precipitates and/or cuboidal gamma prime phase precipitates whereby the first region of the component has enhanced resistance to low cycle fatigue and the second region of the component has enhanced resistance to creep deformation. | 02-25-2010 |
20110088817 | METHOD OF FORGING A NICKEL BASE SUPERALLOY - A method of forging a nickel base superalloy comprising providing a nickel base superalloy preform ( | 04-21-2011 |
20110103961 | METHOD OF PRODUCING AN OXIDE DISPERSION STRENGTHENED NICKEL-BASE SUPERALLOY - A method of producing an oxide dispersion strengthened nickel-base superalloy, comprising introducing an oxide dispersoid material into a plasma gun of a plasma spray apparatus, where it is sublimed and turned to vapour; and introducing a nickel-base superalloy material into the plasma spray apparatus at a cooler location, downstream of the plasma gun, such that the oxide dispersoid material condenses on the superalloy material to produce the oxide dispersion strengthened nickel-base superalloy. | 05-05-2011 |
20110198001 | METHOD OF HEAT TREATING A SUPERALLOY COMPONENT AND AN ALLOY COMPONENT - A method of heat treating a superalloy component includes solution heat treating the component at a temperature below the gamma prime solvus temperature to produce a fine grain structure. Insulation is placed over a first area to form an insulated assembly that is placed in a furnace at a temperature below the solvus temperature and maintained at that temperature for a predetermined time to achieve a uniform temperature. The temperature is increased at a predetermined rate to a temperature above the solvus temperature to maintain a fine grain structure in a first region, produce a coarse grain structure in a second region and produce a transitional structure in a third region between the first and second regions. The insulated assembly is removed from the furnace when the second region has been above the solvus temperature for a predetermined time and/or the first region has reached a predetermined temperature. | 08-18-2011 |
20120269646 | NICKEL BASE SUPERALLOY - A nickel base superalloy consisting of 20 to 40 wt % cobalt, 10 to 15 wt % chromium, 3 to 6 wt % molybdenum, 0 to 5 wt % tungsten, 2.5 to 4 wt % aluminium, 3.4 to 5 wt % titanium, 1.35 to 2.5 wt % tantalum, 0 to 2 wt % niobium, 0.5 to 1 wt % hafnium, 0 to 0.1 wt % zirconium, 0.01 to 0.05 wt % carbon, 0.01 to 0.05 wt % boron, 0 to 2 wt % silicon and the balance nickel plus incidental impurities. The gamma prime phase comprises (Ni/Co) | 10-25-2012 |
Patent application number | Description | Published |
20090302281 | METHOD AND APPARATUS FOR PRODUCING A DISLOCATION-FREE CRYSTALLINE SHEET - A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate. | 12-10-2009 |
20100012861 | METHOD AND APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION - An ion beam angle detection apparatus, comprising a linear drive assembly fixedly attached to a moveable profiler assembly, wherein the profiler assembly comprises, a profiler having a profiler aperture formed within a profiler top plate and a profiler sensor assembly, a moveable angle mask assembly comprising a moveable angle mask with a mask aperture, wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam. | 01-21-2010 |
20100084579 | FLUID DELIVERY MECHANISM FOR VACUUM WAFER PROCESSING SYSTEM - The fluid delivery mechanism of the present disclosure provides a solution for use in a single axis of motion that allows the connection of one or more fluid flow paths over a wide range of temperatures into a vacuum environment. The mechanism does not employ flexible tubing that is prone to fatigue, especially at very low temperatures. In one embodiment, a tube is axially moved within a sealed piston to allow for fluid delivery. In a second embodiment, bellows are used to provide the required functionality. In another embodiment, it is possible to achieve movement in two or more axis of motion by utilizing two or more appropriately configured mechanisms. | 04-08-2010 |
20120043712 | MECHANISM AND METHOD FOR ALIGNING A WORKPIECE TO A SHADOW MASK - A workpiece support is disclosed in which the platen, and thus the workpiece, can be tilted about at least two axis, which allows gravity to align the workpiece with a shadow mask in two orthogonal directions. In some embodiments, the workpiece support utilizes an axis of rotation that is orthogonal to the surface of the workpiece, in conjunction with a second axis that is parallel to the surface of the workpiece. Additionally, a method of aligning the workpiece using this workpiece support is also disclosed. Further, the workpiece support can be utilized to remove the workpiece from the support after implantation is completed. | 02-23-2012 |
20140252720 | FLOATING HIGH VACUUM SEAL CARTRIDGE - An apparatus that uses a combination of mechanical contact bearings and air bearings is disclosed. The apparatus includes a fixed seal housing, attached to a process chamber and a floating seal cartridge, which is disposed in proximity to the fixed seal housing. A shaft is disposed with an aperture in the process chamber, the central opening in the fixed seal housing and the second central opening in the floating seal cartridge. A first air bearing is created between the shaft and the floating seal cartridge in the second central opening. A second air bearing is created between the floating seal cartridge and the fixed seal housing. In this way, the floating seal cartridge is free to move with the shaft radially, while still maintaining a seal between the process chamber and the external environment. | 09-11-2014 |
20150063954 | HIGH THROUGHPUT SUBSTRATE HANDLING ENDSTATION AND SEQUENCE - Systems and methods for facilitating expeditious handling and processing of semiconductor substrates with a minimal number of handling devices. Such a system may include an entry load-lock configured to transfer substrates from an atmospheric environment to a vacuum chamber, an alignment station disposed in the vacuum chamber and configured to adjust orientations of substrates, a first vacuum robot configured to move substrates from the entry load-lock to the alignment station, a process station disposed in the vacuum chamber and configured to perform a designated process on substrates, first and second exit load-locks configured to transfer substrates from the vacuum chamber to the atmospheric environment, and a second vacuum robot configured to move substrates from the alignment station to the process station and further configured to move substrates from the process station to the first exit load-lock and to the second exit load-lock in an alternating fashion. | 03-05-2015 |