Patent application number | Description | Published |
20120180067 | INFORMATION PROCESSING APPARATUS AND COMPUTER PROGRAM PRODUCT - According to an embodiment, based on task border information, and first-type dependency relationship information containing N number of nodes corresponding to data accesses to one set of data, containing edges representing dependency relationship between the nodes, and having at least one node with an access reliability flag indicating reliability/unreliability of corresponding data access; task border edges, of edges extending over task borders, are identified that have an unreliable access node linked to at least one end, and presentation information containing unreliable access nodes is generated. According to dependency existence information input corresponding to the set of data, conversion information indicating absence of data access to the unreliable access nodes is output. According to the conversion information, the first-type dependency relationship information is converted into second-type dependency relationship information containing M number of nodes (0≦M≦N) corresponding to data accesses to the set of data and containing edges representing inter-node dependency relationship. | 07-12-2012 |
20130117512 | PROGRAM CONVERTING APPARATUS, PROGRAM CONVERTING METHOD, AND MEDIUM - According to one embodiment, a program converting device includes an access attribute determining unit, a non-sharing target classifying unit, and a converting unit. The access attribute determining unit calculates exclusive accesses from memory accesses by threads forming a source program and determines a memory access using a cache memory among the calculated exclusive accesses. The non-sharing target classifying unit determines an access data item that does not share a cache line with another access data item among the access data items that are accessed using the cache memories. The converting unit inserts a process that does not share the cache line into the source program based on the determination result of the non-sharing target classifying unit. | 05-09-2013 |
20130218903 | PROGRAM ANALYSIS APPARATUS, PROGRAM ANALYSIS METHOD AND STORAGE MEDIUM - It is to provide: a generation unit configured to generate one or more reference relationship pairs with reference certainty information of “uncertainty” as presentation information based on first reference relationship information showing whether it is “certain” for the reference data to refer the referenced data or it is “uncertain” for the reference data to refer the referenced data, every reference relationship pair formed with reference data and referenced data; and a conversion unit configured to convert the first reference relationship information into second reference relationship information using an input of a reference relationship for presentation information and reference dependence relationship information showing a dependence relationship between reference relationship pairs. | 08-22-2013 |
20140076365 | CLEANING COMPOSITION AND METHOD FOR CLEANING A SEMICONDUCTOR DEVICE SUBSTRATE AFTER CHEMICAL MECHANICAL POLISHING - An aqueous cleaning composition and method for post-CMP cleaning of a semiconductor device which contains a copper interconnect wherein the cleaning composition contains (A) N,N,N′-trimethyl-N′-(2-hydroxyethyl)ethylenediamine; and (B) at least one corrosion inhibitor selected from the group consisting essentially of uric acid, xanthine, theophyline, paraxanthine, theobromine, caffeine, guanine, hypoxanthine, adenine, and combinations thereof. | 03-20-2014 |
Patent application number | Description | Published |
20140097547 | SEMICONDUCTOR DEVICE - This invention is to improve noise immunity to the power supply and ground of a wiring board and a second semiconductor chip in an interior of a semiconductor device. A first semiconductor chip is mounted over a wiring board, and a second semiconductor chip is mounted in a central part located over the first semiconductor chip. Bottom surface electrodes of power and ground systems in the second semiconductor chip are led to their corresponding external coupling electrodes formed in the central part of the wiring board though chip through vias formed in the central part of the first semiconductor chip. The power and ground system bottom surface electrodes, the through vias and the external coupling electrodes are respectively arranged discretely from each other between the power and ground systems. | 04-10-2014 |
20140239493 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE - Provided is a semiconductor chip that is flip-chip mounted where an inner chip pad array and an outer chip pad array, which are arranged on an inner side and an outer side of IO cells in a staggered manner, are arranged to be spaced away from each other by a predetermined gap or greater. The predetermined gap represents a gap where one via can be arranged between an inner substrate pad array and an outer substrate pad array on a substrate which faces and is connected to the inner chip pad array and the outer chip pad array. In addition, the predetermined gap represents a gap where a plated wire is interconnected and then a resist opening for etch-back can be formed. Even in a case where a space for forming an interconnection is not present between outer substrate pad arrays, interconnection characteristics of the substrate are improved. | 08-28-2014 |
20140284818 | SEMICONDUCTOR CHIP AND SEMICONDUCTOR DEVICE - Provided is a semiconductor chip that is flip-chip mounted where an inner chip pad array and an outer chip pad array, which are arranged on an inner side and an outer side of IO cells in a staggered manner, are arranged to be spaced away from each other by a predetermined gap or greater. The predetermined gap represents a gap where one via can be arranged between an inner substrate pad array and an outer substrate pad array on a substrate which faces and is connected to the inner chip pad array and the outer chip pad array. In addition, the predetermined gap represents a gap where a plated wire is interconnected and then a resist opening for etch-back can be formed. Even in a case where a space for forming an interconnection is not present between outer substrate pad arrays, interconnection characteristics of the substrate are improved. | 09-25-2014 |
Patent application number | Description | Published |
20100140617 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A semiconductor device manufacturing method includes the steps of: forming a transistor on a surface side of a silicon layer of a silicon-on-insulator substrate, the silicon-on-insulator substrate being formed by laminating a substrate, an insulating layer, and the silicon layer; forming a first insulating film covering the transistor and a wiring section including a part electrically connected to the transistor on the silicon-on-insulator substrate; measuring a threshold voltage of the transistor through the wiring section; forming a supporting substrate on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; removing at least a part of the substrate and the insulating layer on a back side of the silicon-on-insulator substrate; and adjusting the threshold voltage of the transistor on a basis of the measured threshold voltage. | 06-10-2010 |
20100140710 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes: a semiconductor layer; an element isolation region formed in the semiconductor layer for separation between a memory element part and a logic element part; first and second field-effect transistors formed in the memory element part and having first and second gate electrodes on a first surface side of the semiconductor layer and a second surface side opposite to the first surface, respectively, and having a source and drain region in common with each other; a third field-effect transistor formed in the logic element part and having a third gate electrode on the second surface side; and first and second insulating films formed on the semiconductor layer to cover the first field-effect transistor and the second and third field-effect transistors, respectively. The first field-effect transistor and the second field-effect transistor are fully-depleted field-effect transistors. The first gate electrode and the second gate electrode are electrically connected. | 06-10-2010 |
20100181547 | Semiconductor device and method of manufacturing the same - A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers. | 07-22-2010 |
20120231620 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: diffusion layers formed at the front surface of a substrate; low-resistance parts formed at the front surfaces of the diffusion layers so as to have resistance lower than the diffusion layer; and rear contact electrodes passing through the substrate from the rear surface of the substrate to be connected to the low-resistance parts through the diffusion layers. | 09-13-2012 |
20120273887 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE - A semiconductor device including a transistor formed on a first surface of a silicon layer; a first insulating film formed on the first surface of said silicon layer and covering said transistor; a wiring section formed in the first insulating film and electrically connected to the transistor; a supporting substrate formed on a surface of the first insulating film with a second insulating film interposed between the supporting substrate and the first insulating film; and an adjusting insulating film for adjusting a threshold voltage of said transistor, the adjusting insulating film being formed on a second surface of said silicon layer opposing the first surface of said silicon layer. Some embodiments may include a probing electrode electrically connected to the transistor and an opening in the silicon layer for exposing the probing electrode. | 11-01-2012 |
Patent application number | Description | Published |
20090189700 | Frequency synthesizer - A frequency synthesizer includes first and second frequency dividers for receiving and frequency-dividing a signal generated by a voltage-controlled oscillator, a frequency mixer for mixing output signals of the first and second frequency dividers, and a third frequency divider for receiving and frequency-dividing a signal having one frequency of two frequencies that are output by the frequency mixer. The first, second third and frequency dividers and the frequency mixer are provided in a feedback loop within a PLL circuit between the voltage-controlled oscillator and the phase comparator. The phase comparator has a first input terminal to which a signal to which a signal that is output by the third frequency divider is input and a second input terminal to which a reference clock signal that is output by a reference signal generator is input. A loop filter supplies the voltage-controlled oscillator with a voltage that is based upon result of the phase comparison by a phase comparator. The voltage-controlled oscillator supplies the first and second frequency dividers with a signal that oscillates at a frequency corresponding to the voltage input to the oscillator. | 07-30-2009 |
20090282920 | NUCLEAR REACTOR VIBRATION SURVEILLANCE SYSTEM AND ITS METHOD - A nuclear reactor vibration surveillance system has a first ultrasonic transducer for transmission, an ultrasonic transmitter, a second ultrasonic transducer for reception, an ultrasonic receiver, a signal processor, and a display unit. The first ultrasonic transducer for transmission is arranged on the outer surface of a reactor pressure vessel and is configured to convert a transmission signal into an ultrasonic pulse signal and allow the ultrasonic pulse to be transmitted to a reactor internal component. The second ultrasonic transducer for reception is arranged on the outer surface of the reactor pressure vessel and is configured to receive a reflected ultrasonic pulse reflected by the reactor internal component and convert the received reflected ultrasonic pulse into a reception signal. | 11-19-2009 |
20110025360 | SEMICONDUCTOR INTEGRATED CIRCUIT TEST DEVICE - A semiconductor IC test device includes: an IC tester providing first and second control signals (CS | 02-03-2011 |
20120285246 | NUCLEAR REACTOR VIBRATION MONITORING DEVICE AND MONITORING METHOD THEREOF - According to an embodiment, a nuclear reactor monitoring device comprises: an ultrasonic wave transmission means which is installed on the outside surface of a reactor pressure vessel and transmits ultrasonic pulses to the interior of the reactor pressure vessel; an ultrasonic wave receiving means which is installed on the outside surface of the reactor pressure vessels and receives reflected pulses including ultrasonic waves from the ultrasonic pulses reflected by an inspection object in the reactor pressure vessel; a preprocessing means which specifies and removes the reflected ultrasonic pulses generated in the wall of the reactor pressure vessel from the reflected pulse signal received by the ultrasonic wave receiving means or selectively extracts the reflected pulse signal; and a calculation means which determines the vibration of the inspection object from the reflection pulse signal processed by the preprocessing means in accordance with the observation time of the inspection object. | 11-15-2012 |
Patent application number | Description | Published |
20160001634 | VEHICLE AIR CONDITIONING DEVICE - The vehicle air conditioning device has a first refrigeration cycle and second refrigeration cycle that have a portion of a refrigeration pathway in common, and form different heat pump cycles; a first water-refrigerant heat exchanger included in the first refrigeration cycle, exchanges heat between a low-temperature and low-pressure refrigerant and the coolant of a heat-generating member of the vehicle, and vaporizes the refrigerant; a flow rate adjustment means that adjusts the flow rate of the coolant flowing through the heat-generating member and the first water-refrigerant heat exchanger; a detection means that detects a decline in the amount of refrigerant in the first refrigeration cycle due to the inflow of the refrigerant into the second refrigeration cycle; and a control means that, when a decline in the amount of refrigerant in the first refrigeration cycle has been detected, controls the flow rate adjustment means, reducing the flow rate of the coolant. | 01-07-2016 |
20160001635 | VEHICULAR AIR CONDITIONING DEVICE, AND COMPONENT UNIT THEREOF - The vehicular air conditioning device is provided with: a first water-refrigerant heat exchanger that vaporizes refrigerant by exchanging heat between the refrigerant of low temperature and low pressure in a heat pump and a cooling fluid for the heat generating component of the vehicle; and a second water-refrigerant heat exchanger that condenses the refrigerant by exchanging heat between the refrigerant of high temperature and high pressure in the heat pump and a cooling fluid for heat transport. The vehicular air conditioning device is configured such that the second water-refrigerant heat exchanger is connected, in a cooling fluid circulable manner, to a heater core for providing heat to air supplied into the cabin. The first water-refrigerant heat exchanger is connected, in a cooling fluid circulable manner, to a passageway for cooling the heat generating component without passing through the heater core. | 01-07-2016 |
20160001636 | VEHICLE AIR CONDITIONING DEVICE - The vehicle air conditioning device is equipped with: a heater core that imparts heat to air flowing to the vehicle cabin interior by flowing a high temperature cooling liquid; a first water-refrigerant heat exchanger that exchanges heat between the cooling liquid and the high-temperature, high-pressure refrigerant in a heat pump, thus condensing the refrigerant; a flow rate adjustment means that adjusts the flow rate of the cooling liquid flowing through the heater core and the first water-refrigerant heat exchanger; and a control unit that performs air conditioning control. The control unit controls the flow rate adjustment means, and adopts a configuration that for a predetermined time period from the starting up of the heat pump, sets the flow rate of the cooling liquid to a second flow rate that is lower than a first flow rate during standard operating. | 01-07-2016 |
Patent application number | Description | Published |
20110318066 | Image Forming Apparatus - An image forming apparatus comprising: a rotary body which rotates in accordance with an image forming operation; a rotation shaft of the rotary body; a through hole which is provided in an end portion in an axial direction of the rotation shaft; a stabilizing member which is provided to rotate together with the rotary body and stabilize the rotary body by reducing fluctuations of rotation of the rotary body under inertia, and which has an inserted portion into which the rotation shaft is inserted; a holding member which is disposed so as to be adjacent to the stabilizing member in the axial direction to hold the stabilizing member on the rotation shaft; a through hole which is formed in the longitudinal portion correspondingly to the through hole provided in the rotation shaft; and a clamp member which passes through the through hole provided in the longitudinal portion and the through hole provided in the rotation shaft. | 12-29-2011 |
20130223894 | ROTATION SHAFT COUPLING STRUCTURE, INTERMEDIATE TRANSFER UNIT INCLUDING THE SAME, AND IMAGE FORMING APPARATUS - A rotation shaft coupling structure includes a roller drive shaft including a recessed portion having an internal thread; a rotation roller including a coupling member housing the recessed portion of the roller drive shaft; and a coupling shaft extending through the rotation roller in the axial direction. The coupling shaft includes a threaded portion at a first end portion thereof, the threaded portion mating with the internal thread of the recessed portion, and the coupling shaft couples the roller drive shaft and the rotation roller to each other. The first end portion of the coupling shaft in the axial direction is joined to the roller drive shaft and the rotation roller in the coupling member of the rotation roller, and a second end portion of the coupling shaft in the axial direction is a free end that allows the coupling shaft to extend and contract in the axial direction. | 08-29-2013 |
20140284866 | IMAGE FORMING SYSTEM AND RELAY APPARATUS - An image forming system includes a sheet feed apparatus that feeds a sheet; an image forming apparatus that is provided independently of the sheet feed apparatus and that includes an image-formation transport path used for transporting the sheet fed from the sheet feed apparatus and an image forming section that forms an image onto the sheet transported along the image-formation transport path; and a relay apparatus that is independently provided between the sheet feed apparatus and the image forming apparatus. The relay apparatus relays the sheet fed from the sheet feed apparatus toward the image forming apparatus and ensures a distance along which the sheet is transported from the sheet feed apparatus to the image forming apparatus. | 09-25-2014 |
20140369712 | IMAGE FORMING APPARATUS - An image forming apparatus includes a cooling device and a drawer. The cooling device includes two medium cooling members facing each other with a medium transport path therebetween, and a movable body moving the cooling members between a first position where they face each other and a second position where they are disposed away from each other. The drawer supports the transport path and the cooling device and is movable between a cooling-device accommodated position inside the apparatus and a cooling-device ejected position outside the apparatus. A transport-path length from an upstream end of the cooling device to a downstream end of the transport path in the movable body is longer than a length of a maximum-size medium. When the drawer and the movable body move to the accommodated position and the second position, respectively, the movable body is accommodated within a space within the apparatus. | 12-18-2014 |
Patent application number | Description | Published |
20100320623 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A multi-pin semiconductor device with improved reliability. In a multi-pin BGA, a plurality of wires for electrically coupling a semiconductor chip and a wiring substrate include a plurality of short and thin first wires located in an inner position and a plurality of second wires longer and thicker than the first wires. Since resin flows in from between thin first wires during resin molding, the resin pushes out air, thereby suppressing formation of voids. The reliability of the multi-pin BGA is thus improved. | 12-23-2010 |
20110074019 | SEMICONDUCTOR DEVICE - To improve reliability of a semiconductor device in which wire bonding using a wire made of copper is performed. A semiconductor device is configured so that one of end parts (wide width part) of a copper wire is joined via a bump on a pad (electrode pad) formed over a main surface (first main surface) of a semiconductor chip of the semiconductor device. The bump is made of gold, which is a metal material having a hardness lower than that of copper, and the width of the bump is narrower than the width of the wide width part of the wire. | 03-31-2011 |
20110201155 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a technology capable of preventing the deterioration of the reliability of semiconductor devices caused by the gasification of a part of components of the material constituting a wiring substrate. | 08-18-2011 |
20120061850 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - To achieve a reduction in cost of a semiconductor device, in a common board (a wiring board), a plurality of bonding leads each extend toward the center of the board, and a solder resist film as a die bonding region supporting a minimum chip is coated with a die bonding material. With this, even when a first semiconductor chip as a large chip is mounted, wire bonding can be performed without causing the die bonding material to cover the bonding leads. Thus, development cost can be reduced to reduce the cost of the semiconductor device (LGA). | 03-15-2012 |
20130065364 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a technology capable of preventing the deterioration of the reliability of semiconductor devices caused by the gasification of a part of components of the material constituting a wiring substrate. | 03-14-2013 |
20140073068 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a semiconductor device having improved reliability. In the semiconductor device in an embodiment, a mark is provided correspondingly to the bonding area of a belt-like wiring exposed from an opening provided in a solder resist. As a result, in an alignment step for the wire bonding area, the coordinate position of the wire bonding area can be adjusted using not the end portion of the opening formed in the solder resist, but the mark formed correspondingly to the wire bonding area as a reference. Also, in the semiconductor device in the embodiment, the mark serving as a characteristic pattern is formed. This allows the wire bonding area to be adjusted based on camera recognition. | 03-13-2014 |
20140175678 | Semiconductor Device and Method of Manufacturing the Same - To achieve a reduction in cost of a semiconductor device, in a common board (a wiring board), a plurality of bonding leads each extend toward the center of the board, and a solder resist film as a die bonding region supporting a minimum chip is coated with a die bonding material. With this, even when a first semiconductor chip as a large chip is mounted, wire bonding can be performed without causing the die bonding material to cover the bonding leads. Thus, development cost can be reduced to reduce the cost of the semiconductor device (LGA). | 06-26-2014 |
20140273353 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To improve reliability of a semiconductor device in which wire bonding using a wire made of copper is performed. A semiconductor device is configured so that one of end parts (wide width part) of a copper wire is joined via a bump on a pad (electrode pad) formed over a main surface (first main surface) of a semiconductor chip of the semiconductor device. The bump is made of gold, which is a metal material having a hardness lower than that of copper, and the width of the bump is narrower than the width of the wide width part of the wire. | 09-18-2014 |