Ming-Shuan
Ming-Shuan Chen, Taipei City TW
Patent application number | Description | Published |
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20090296793 | DUOBINARY TRANSCEIVER - The present invention relates to a duobinary transceiver. Specifically, the duobinary transceiver circuit proposed by the invention provides a new circuit configure of a precoder in a typical transceiver and a decoder in a typical receiver, based on a conventional transceiver including a transmitter, a transmission medium, and a receiver. | 12-03-2009 |
Ming-Shuan Lee, Taipei City TW
Patent application number | Description | Published |
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20090051395 | DC/DC converter with spread spectrum switching signals - A DC/DC converter includes a converting circuit for converting a first voltage into a second voltage; a controller for generating spread spectrum switching signals; and a switch according to the spread spectrum switching signals controlling the on/off state of the switch. | 02-26-2009 |
Ming-Shuan Li, Zhudong Township TW
Patent application number | Description | Published |
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20130187221 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A method of forming a semiconductor device includes performing a first pre-amorphous implantation process on a substrate, where the substrate has a gate stack. The method further includes forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate, and performing a second annealing process on the substrate and the second stress film. | 07-25-2013 |
20140346614 | SEMICONDUCTOR DEVICE - A semiconductor device includes a gate structure over a substrate, a source region in the substrate, where the source region is adjacent to the gate structure. Additionally, the semiconductor device includes a drain region in the substrate, where the drain region is adjacent to the gate structure. Moreover, the semiconductor device includes a first dislocation in the substrate between the source region and the drain region. Furthermore, the semiconductor device includes a second dislocation in the substrate between the source region and the drain region, where the second dislocation is substantially parallel to the first dislocation. | 11-27-2014 |