Patent application number | Description | Published |
20090295419 | MEMORY CHIP AND METHOD FOR OPERATING THE SAME - A memory chip and method for operating the same are provided. The memory chip includes a number of pads. The method includes inputting a number of first test signals to the pads respectively, wherein the first test signals corresponding to two physically-adjacent pads are complementary; inputting a number of second test signals, respectively successive to the first test signals, to the pads, wherein the first test signal and the second test signal corresponding to each of the pads are complementary; and outputting expected data from the memory chip if the first test signals and the second test signals are successfully received by the memory chip. | 12-03-2009 |
20100054045 | Memory and Reading Method Thereof - A memory includes many memory regions each including a target memory cell, a source line, a bit line and a reading control circuit. The source line is coupled to a first terminal of the target memory cell. The bit line is coupled to a second terminal of the target memory cell. The reading control circuit is for selectively applying a working voltage to the source line. | 03-04-2010 |
20100149893 | METHOD AND APPARATUS FOR PROTECTION OF NON-VOLATILE MEMORY IN PRESENCE OF OUT-OF-SPECIFICATION OPERATING VOLTAGE - A method and apparatus for protecting non-volatile memory is described. A write command is processed only when an operating voltage is between specified operating limits and when a data pattern stored in the non-volatile memory is repeatedly read successfully. | 06-17-2010 |
20110038218 | Memory Chip and Method for Operating the Same - A memory chip and method for operating the same are provided. The memory chip includes a number of pads. The method includes inputting a number of first test signals to the pads respectively, wherein the first test signals corresponding to two physically-adjacent pads are complementary; inputting a number of second test signals, respectively successive to the first test signals, to the pads, wherein the first test signal and the second test signal corresponding to each of the pads are complementary; and outputting expected data from the memory chip if the first test signals and the second test signals are successfully received by the memory chip. | 02-17-2011 |
20110216607 | METHOD AND APPARATUS FOR PROTECTION OF NON-VOLATILE MEMORY IN PRESENCE OF OUT-OF-SPECIFICATION OPERATING VOLTAGE - A method and apparatus for protecting non-volatile memory is described. A write command is processed only when an operating voltage is between specified operating limits and when a data pattern stored in the non-volatile memory is repeatedly read successfully. | 09-08-2011 |
20120057410 | Method and Apparatus for the Erase Suspend Operation - Various aspects of a nonvolatile memory have an improved erase suspend procedure. A bias arrangement is applied to word lines of an erase sector undergoing an erase procedure interrupted by an erase suspend procedure. As a result, another operation performed during erase suspend, such as a read operation or program operation, has more accurate results due to decreased leakage current from any over-erased nonvolatile memory cells of the erase sector. | 03-08-2012 |
20120300553 | Method and Apparatus of Performing An Erase Operation On A Memory Integrated Circuit - Various discussed approaches improve the over erase issue and the coupling effect, and include (A) multilevel contacts between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line; (B) a sufficient separation distance between (i) the first outer selected word line of an erase group, and (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. These are examples of electrically isolating (i) the first outer selected word line of an erase group, from (ii) the first unselected word line outside the ease group neighboring the first outer selected word line. | 11-29-2012 |
20130100745 | Method and Apparatus of Performing An Erase Operation On A Memory Integrated Circuit - Various discussed approaches include an improved grouping of edge word lines and center word lines of an erase group during erase verify and erase sub-operations of an erase operation. In another approach, changed voltage levels of edge word lines to address the over-erase issue of the erase group, and also improve erase time performance. Another approach uses dummy word lines. | 04-25-2013 |
20130326184 | MEMORY APPARATUS - A memory apparatus includes a host device and a slave device. The host device stores verification data. The slave device includes a memory unit, a control unit, and a logic unit. The control unit drives the memory unit to provide storage data in a data transmission sub-period, and further provides a control signal, indicating the first verification data, in a dummy sub-period. The logic unit provides first preamble data, indicating substantially a same data value as the verification data, in the dummy sub-period in response to the first control signal. The preamble data and the storage data are transmitted according to an internal clock signal. The host device samples the first preamble data according to an external clock signal, and determines whether the external and the internal clock signals are synchronized by comparing the first preamble data and the first verification data. | 12-05-2013 |
20140210522 | DRIVE CIRCUITRY COMPENSATED FOR MANUFACTURING AND ENVIRONMENTAL VARIATION - Current drivers and biasing circuitry at least partly compensate for manufacturing variations and environmental variations such as supply voltage, temperature, and fabrication process. | 07-31-2014 |