Patent application number | Description | Published |
20090246499 | Silicone Resin Film and Method of Preparing Same - A method of preparing a silicone resin film comprising coating a first release liner with a filled silicone composition comprising a hydrosilylation-curable silicone composition and a flame retardant filler, applying a second release liner to the coated first release liner to form an assembly, compressing the assembly; and curing the silicone resin of the compressed assembly, wherein the silicone resin film has a thickness of from 1 to 500 μm; and a silicone resin film. | 10-01-2009 |
20100015439 | Glass Substrates Coated or Laminated With Cured Silicone Resin Compositions - An article of manufacture comprising (i) at least one glass substrate and (ii) a coating layer on at least a portion of at least one side of the glass substrate wherein the coating layer comprises a cured silicone resin composition selected from a hydrosilylation cured silicone resin composition, a condensation cured silicone resin composition, or a tree radical cured silicone resin composition; the glass being preferably a thin glass (5-500 micrometers) | 01-21-2010 |
20100035046 | Metal Foil Substrates Coated with Condensation Cured Silicone Resin Compositions - An article of manufacture comprising (i) at least one metal foil substrate; (ii) a coating layer on at least a portion of at least one side of the metal foil substrate wherein the coating layer comprises (a) a condensation cured silicone resin composition and (b) silica nanoparticles. | 02-11-2010 |
20120289730 | Method Of Preparing An Organohalosilane - A method of preparing organohalosilanes comprising combining an organohalide having the formula RX (I), wherein R is a hydrocarbyl group having 1 to 10 carbon atoms and X is fluoro, chloro, bromo, or iodo, with a contact mass comprising at least 2% (w/w) of a palladium suicide of the formula Pd | 11-15-2012 |
20130039831 | METHOD OF PREPARING A HYDRIDOHALOSILANE COMPOUND - A method of preparing a hydridohalosilane compound comprises treating a preformed metal silicide with a mixture comprising hydrogen gas and a silicon tetrahalide to prepare the hydridohalosilane compound. | 02-14-2013 |
20130060060 | Preparation of Organohalosilanes - A process for preparing organohalosilanes comprising combining hydrogen, a halosilane having the formula H | 03-07-2013 |
20130066096 | Method for Preparing a Diorganodihalosilane - A method of preparing a diorganodihalosilane comprising the separate and consecutive steps of (i) contacting a copper catalyst with a mixture comprising hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon, wherein the copper catalyst is selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, calcium, cesium, tin, and sulfur; and (ii) contacting the silicon-containing copper catalyst with an organohalide at a temperature of from 100 to 600° C. to form at least one diorganodihalosilane. | 03-14-2013 |
20130108501 | Method of Releasing High Temperature Films and/or Devices From Metallic Substrates | 05-02-2013 |
20130156676 | Method for Preparing a Trihalosilane - A method of preparing a trihalosilane comprising the separate and consecutive steps of (i) contacting a copper catalyst with hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon, wherein the copper catalyst comprises a metal selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, and platinum; and (ii) contacting the silicon-containing copper catalyst with a hydrogen halide at a temperature of from 100 to 600° C. to form a trihalosilane. | 06-20-2013 |
20130251617 | Method of Making a Trihalosilane - A method of making a trihalosilane comprising contacting an organotrihalosilane according to the formula RS1X3 (I), wherein R is C | 09-26-2013 |
20130261279 | Method of Making a Diorganodihalosilane - A method of making a diorganodihalosilane contacting an organotrihalosilane according to the formula RSiX | 10-03-2013 |
20130284973 | Method Of Forming Polyhedral Oligomeric Silsesquioxane Compounds - A mixture of at least two polyhedral oligomeric silsesquioxane (POSS) compounds is formed in the presence of rhenium on cerium(IV) oxide. The POSS compounds are formed utilizing a method that includes the step of combining (a) a trihalosilane, (b) hydrogen gas, and (c) the rhenium on cerium(IV) oxide, in a reactor at a temperature of from 250° C. to 600° C. to form the mixture. The trihalosilane has the formula RSiX | 10-31-2013 |
20130310534 | Method of Preparing a Diorganodihalosilane - A method of preparing a diorganodihalosilane, the method comprising the following separate and consecutive steps: (i) treating a preformed metal silicide with a mixture comprising hydrogen gas and a silicon tetrahalide at a temperature from 300 to 1400° C. to form a treated metal silicide, wherein the preformed metal silicide comprises a metal selected from at least one of Ni, Pd, or Pt; and (ii) reacting the treated metal silicide with an organohalide according to the formula RX at a temperature from 250 to 700° C. to form a diorganodihalosilane, wherein R is C | 11-21-2013 |
20130334459 | Method of Selectively Forming a Reaction Product in the Presence of a Metal Silicide - A reaction product is formed utilizing a method that includes the step of combining a metal silicide and an aliphatic hydrocarbyl halide at a temperature of from 200° C. to 600° C. The aliphatic hydrocarbyl halide has the formula H | 12-19-2013 |
20140243494 | Method for Preparing a Diorganodihalosilane - A method of preparing a diorganodihalosilane, the method comprising the following separate and consecutive steps: (a) treating a metal catalyst comprising a metal selected from the groups consisting of i) gold, ii) gold and copper, iii) gold, copper and magnesium, iv) copper, rhodium and gold, v) copper, rhodium, and rhenium, vi) rhenium and palladium, vii) copper, and viii) copper and magnesium with a mixture comprising hydrogen gas and an organotrihalosilane at a temperature from 500 to 1400° C. to form a silicon-containing metal intermediate; and (b) reacting the silicon-containing metal intermediate with an organohalide according to the formula RX, wherein R is C | 08-28-2014 |
20140256975 | Method for Preparing a Diorganodihalosilane - A method of preparing a diorganodihalosilane comprising the separate and consecutive steps of (i) contacting a copper catalyst with a mixture comprising hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon, wherein the copper catalyst is selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, calcium, cesium, tin, and sulfur; and (ii) contacting the silicon-containing copper catalyst with an organohalide at a temperature of from 100 to 600° C. to form at least one diorganodihalosilane. | 09-11-2014 |
20140335007 | Method for preparing a trihalosilane - A method of preparing a trihalosilane comprising the separate and consecutive steps of (i) contacting a copper catalyst with hydrogen gas and a silicon tetrahalide at a temperature of from 500 to 1400° C. to form a silicon-containing copper catalyst comprising at least 0.1% (w/w) of silicon, wherein the copper catalyst comprises a metal selected from copper and a mixture comprising copper and at least one element selected from gold, magnesium, and platinum; and (ii) contacting the silicon-containing copper catalyst with a hydrogen halide at a temperature of from 100 to 600° C. to form a trihalosilane. | 11-13-2014 |
20150045571 | Method for Preparing an Organofunctional Compound - Claimed is a method for making an organofunctional compound of formula R | 02-12-2015 |
Patent application number | Description | Published |
20090084427 | Copper Indium Diselenide-Based Photovoltaic Device And Method Of Preparing the Same - A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate formed from a silicone composition. The substrate, because it is formed from the silicone composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device. | 04-02-2009 |
20090084428 | Copper Indium Diselenide-Based Photovoltaic Device And Method Of Preparing The Same - A copper indium diselenide (CIS)-based photovoltaic device includes a CIS-based solar absorber layer including copper, indium, and selenium. The CIS-based photovoltaic device further includes a substrate including a silicone layer formed from a silicone composition and a metal foil layer. The substrate, due to the presence of the silicone layer and the metal foil layer, is both flexible and sufficiently able to withstand annealing temperatures in excess of 500° C. to obtain maximum efficiency of the device. | 04-02-2009 |
20090090413 | Cadmium Telluride-Based Photovoltaic Device And Method Of Preparing The Same - A cadmium telluride (CdTe)-based photovoltaic device includes a CdTe layer including cadmium and telluride. The CdTe-based photovoltaic device further includes a substrate including a silicone layer formed from a silicone composition. The substrate, because it includes the composition, is both flexible and sufficiently able to withstand annealing temperatures in excess of 350° C., and frequently in excess of 500° C., to obtain maximum efficiency of the device. | 04-09-2009 |
20090098393 | Method of Releasing High Temperature Films and/or Devices from Metallic Substrates - Films and electronic devices can be released from metallic substrates by: (i) applying a coating of a polysilsesquioxane resin to a metallic substrate, (ii) heating the coated metallic substrate to a temperature sufficient to cure the polysilsesquioxane resin, (iii) applying a polymeric film to the cured coating on the metallic substrate, (iv) further heating the coated metallic substrate to a temperature sufficient to cure the polymeric film, (v) optionally fabricating electronic devices on the polymeric film, and (vi) releasing the polymeric film from the metallic substrate. | 04-16-2009 |
20100041851 | HETEROELEMENT SILOXANE COMPOUNDS AND POLYMERS - Heteroelement siloxane polymers are described. The heteroelement siloxane polymers can have linear structure, cyclic structure, branched structure, and three-dimensional network structure and combinations thereof. The heterosiloxane polymers can be cured using curing chemistry derived from thermoset organosilicon polymers, and gels, coatings, plaques, parts and other useful articles can be prepared. | 02-18-2010 |
20100051920 | Composite Article Including a Cation-Sensitive Layer - A composite article includes a substrate having a surface, a cation-sensitive layer including a cation-sensitive material disposed on the surface of the substrate, and a silicone layer disposed between the substrate and the cation-sensitive layer. Cations are present on the surface of the substrate in an amount of at least 0.1 atomic weight percent based on the total atomic weight of the atoms on the surface of the substrate. The silicone layer includes a cured silicone composition for preventing cations from migrating from the substrate to the cation-sensitive layer. The inclusion of the silicone layer between the cation-sensitive layer and the substrate enables the use of materials for the substrate that have not been useable in the past due to the presence of excessive amounts of cations in the materials. | 03-04-2010 |
20100089451 | Curable Liquid Composition, Method Of Coating, Inorganic Substrate, and Semiconductor Device - A curable liquid composition obtained by subjecting hydrogen halosiloxane or hydrogen alkoxysilane to condensation or to hydrolysis and condensation in an organic solvent in which fine polyvalent metal oxide particles with hydroxyl groups are dispersed; a method of forming a hard silica-type layer by applying onto an inorganic substrate the aforementioned composition and then curing the composition; an inorganic substrate with the aforementioned hard silica-type layer; and a semiconductor device comprising the aforementioned inorganic substrate on which a semiconductor layer is formed. | 04-15-2010 |
20100093242 | Composite Article Having Excellent Fire Resistance - A composite article includes a first window layer formed from a vitreous material and a reinforced silicone layer disposed adjacent the first window layer. The reinforced silicone layer includes a cured silicone composition and a fiber reinforcement. Due to the presence of the cured silicone composition in the reinforced silicone layer, the composite article exhibits excellent fire resistance and will not emit as much smoke and toxic gases as composite articles including primarily carbon-based materials. Further, due to the presence of the fiber reinforcement in the reinforced silicone layer, the composite article maintains excellent structural integrity even after a breach is formed in the composite article due to heat. As such, the composite articles of the subject invention may be suitable for load-bearing applications that are not possible with existing composite articles. | 04-15-2010 |
20110011447 | Method of Forming A Ceramic Silicon Oxide Type Coating, Method of Producing An Inorganic Base Material, Agent For Forming A Ceramic Silicon Oxide Type Coating, and Semiconductor Device - A method of forming a ceramic silicon oxide type coating and a method of producing an inorganic base material having this coating, by coating an organohydrogensiloxane/hydrogensiloxane copolymer on the surface of an inorganic base material and converting the coating into a ceramic silicon oxide type coating by heating to high temperatures in an inert gas or an oxygen-containing inert gas (oxygen gas less than 20 volume %). A coating-forming agent comprising an organohydrogensiloxane/hydrogensiloxane copolymer or its solution. A semiconductor device comprising at least a semiconductor layer formed on a silicon oxide type coating on an inorganic substrate. | 01-20-2011 |
20110177342 | Cured Organopolysiloxane Resin Film Having Gas Barrier Properties and Method Of Producing The Same - A cured organopolysiloxane resin film having gas barrier properties in which a layer of cured organopolysiloxane that contains an organic functional group, an organic group produced by the polymerization of polymerizable organic functional groups, or the hydrosilyl group or silanol group, is formed on a visible region-transparent film comprising cured organopolysiloxane resin yielded by hydrosilylation reaction-mediated crosslinking, and in which a silicon oxynitride layer, silicon nitride layer, or silicon oxide layer is formed on the aforementioned layer of cured organopolysiloxane. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties. | 07-21-2011 |
20130012087 | Cured Organopolysiloxane Resin Film Having Gas Barrier Properties and Method Of Producing The Same - A cured organopolysiloxane resin film having gas barrier properties comprising a fiber-reinforced film made of a hydrosilylation-cured organopolysiloxane resin and having a transparent inorganic layer selected from silicon oxynitride layer, silicon nitride layer, and silicon oxide layer formed on the fiber-reinforced film wherein a layer of cured organopolysiloxane that contains an organic functional group, silanol group, hydrosilyl group, or an organic group produced by the polymerization of polymerizable organic functional groups is interposed between said fiber-reinforced film and inorganic layer. Also, a method of producing this cured organopolysiloxane resin film having gas barrier properties. | 01-10-2013 |
20140138577 | Method Of Forming Polysilanes And Polycarbosilanes In The Presence Of A Metal Silicide - A mixture of at least one polysilane and at least one polycarbosilane is formed in the presence of a metal silicide. The mixture is formed utilizing a method that includes the step of combining the metal silicide and an alkyl halide in a reactor at a temperature of from 200° C. to 600° C. The alkyl halide has the formula RX, wherein R is C | 05-22-2014 |