Patent application number | Description | Published |
20080226136 | LIVING BODY GUIDANCE CONTROL METHOD FOR A BIOMETRICS AUTHENTICATION DEVICE, AND BIOMETRICS AUTHENTICATION DEVICE - A biometrics authentication device identifies characteristics of the body from captured images of the body and performs individual authentication. The device guides a user, at the time of verification, to the image capture state at the time of registration of biometrics characteristic data. At the time of registration of biometrics characteristic data, body image capture state data is extracted from an image captured by an image capture unit and is registered in a storage unit, and at the time of verification the registered image capture state data is read from the storage unit and is compared with image capture state data extracted at the time of verification, and guidance of the body is provided. Alternatively, an outline of the body at the time of registration, taken from image capture state data at the time of registration, is displayed. | 09-18-2008 |
20120299949 | AUTHENTICATION SYSTEM, AUTHENTICATION PROGRAM, AND METHOD OF AUTHENTICATION - A processing unit executes a process for creating a dedicated color palette (color palette dedicated for a palm vein GUI) as an initialization process, and creates the color palette dedicated for a palm vein GUI. The processing unit replaces a 256-level gradation grayscale palette set in an acquired photographed image with the color palette dedicated for the palm vein GUI. The processing unit performs guide GUI display for guiding a palm to an appropriate position, using a display image formed by setting the color palette dedicated for the palm vein GUI for the photographed image acquired from a photographed image-acquiring process. | 11-29-2012 |
Patent application number | Description | Published |
20110140243 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects. | 06-16-2011 |
20120015508 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a method of manufacturing a semiconductor device capable of preventing a relative displacement of the positions between a range where impurity ions are injected and a range where charged particles are injected. The method of manufacturing the semiconductor device includes: irradiating impurity ions in a state in which a mask is disposed between an impurity ion irradiation apparatus and a semiconductor substrate; and irradiating charged particles to form a short carrier lifetime region, in a state in which the mask is disposed between a charged particle irradiation apparatus and the semiconductor substrate. A relative positional relationship between the mask and the semiconductor substrate is not changed from a beginning of one of the irradiating the impurity ions and the irradiating the charged particles to a completion of both of the irradiating the impurity ions and the irradiating the charged particles. | 01-19-2012 |
20130001639 | SEMICONDUCTOR DEVICE COMPRISING SEMICONDUCTOR SUBSTRATE HAVING DIODE REGION AND IGBT REGION - A semiconductor device includes a semiconductor substrate in which a diode region and an IGBT region are formed, wherein a lower surface side of the semiconductor substrate comprises a low impurity region provided between a second conductivity type cathode region of the diode region and a first conductivity type collector region of the IGBT region. The low impurity region includes at least one of a first conductivity type first low impurity region which has a lower density of first conductivity type impurities than that in the collector region and a second conductivity type second low impurity region which has a lower density of second conductivity type impurities than that in the cathode region. | 01-03-2013 |
20130181254 | SEMICONDUCTOR DEVICE - In a semiconductor device having a semiconductor substrate on which a diode and an IGBT are formed, a cathode region of the diode and a collector region of the IGBT are formed in a range exposed to one surface of the semiconductor substrate. On the surface, a first conductor layer that is in contact with the cathode region, and a second conductor layer that is in contact with the collector region are formed. The work function of the second conductor layer is larger than the work function of the first conductor layer. | 07-18-2013 |
20140179116 | IMPROVEMENT OF REVERSE RECOVERY USING OXYGEN-VACANCY DEFECTS - A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects. | 06-26-2014 |
20160005622 | METHOD FOR REDUCING NONUNIFORMITY OF FORWARD VOLTAGE OF SEMICONDUCTOR WAFER - There is provided a method for reducing the nonuniformity of forward voltage Vf of an N-type semiconductor wafer in which density of impurities included in an N-layer is nonuniformly distributed in a plane view of the semiconductor wafer. The method reduces the nonuniformity of forward voltage, by irradiating charged particles to the N-type semiconductor wafer, and generating defects in the N-layer to reduce the nonuniformity of forward voltage. In one aspect of the method, charged particles are irradiated so that a reaching positon in a depth direction or an irradiation density may differ according to the density of impurities in the N-layer in the plane view of the semiconductor wafer. | 01-07-2016 |