Ooike
Makoto Ooike, Kyoto JP
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20140015886 | METHOD OF INK APPLICATION ON SUBSTRATE - A method of ink application on a substrate having a plurality of reference marks includes a step of setting a plurality of divided areas on the substrate and measuring positions of the reference marks in each of the divided areas, a step of acquiring a deviation amount of a gravity center of a measured figure defined by the positions of the reference marks, a step of acquiring a corrected applied position by correcting a designed applied position on the basis of the deviation amount of the gravity center, and a step of applying ink onto the substrate according to the corrected applied position. | 01-16-2014 |
Masahito Ooike, Noda JP
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20090090867 | NUCLEAR MEDICAL DIAGNOSIS APPARATUS - A nuclear medical diagnosis apparatus comprises a nuclear radiation detector for detecting a nuclear radiation generated by a nuclide arranged in a body of a subject, a correcting radiation applying mechanism for directing a correcting radiation generated by a correcting radiation source to the subject so that the correcting radiation passes through the subject to be detected by the nuclear radiation detector, and | 04-09-2009 |
Noboru Ooike, Kawasaki-Shi JP
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20110049636 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a semiconductor memory device includes a semiconductor substrate, and isolation layers formed in a surface of the semiconductor substrate, and separating the semiconductor substrate into active areas, the isolation layers and the active areas being alternately arranged along a predetermined direction parallel to the surface of the semiconductor substrate, a height of upper surfaces of the isolation layers being lower than a height of an upper surface of the semiconductor substrate. The device further includes diffusion layers formed on surfaces of the active areas, and a stress liner formed on upper surfaces and side surfaces of the diffusion layers, and formed of a material having a lattice constant smaller than a lattice constant of a material formed of the semiconductor substrate. | 03-03-2011 |
20110291174 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a nonvolatile semiconductor memory device includes a substrate, and a well region formed in the substrate. The device further includes device regions formed in the well region and defined by isolation trenches formed in the well region, the device regions extending in a first direction parallel to a principal surface of the substrate, and being adjacent to one another in a second direction that is perpendicular to the first direction. The device further includes isolation insulators buried in the isolation trenches to isolate the device regions from one another. The device further includes floating gates disposed on the device regions via gate insulators, and a control gate disposed on the floating gates via an intergate insulator. The device further includes first diffusion suppressing layers formed inside the respective device regions to divide each of the device regions into an upper device region and a lower device region. The device further includes second diffusion suppressing layers formed on side surfaces of the respective upper device regions, the side surfaces being perpendicular to the second direction. | 12-01-2011 |
Noboru Ooike, Kanagawa-Ken JP
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20100320527 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device according to embodiment includes: a semiconductor substrate having an upper portion being partitioned into a plurality of semiconductor portions extending in a first direction; a charge storage film provided on the semiconductor portion; a word-line electrode provided on the semiconductor substrate and extending in a second direction intersecting with the first direction; and a pair of selection gate electrodes provided on both sides of the word-line electrode in the first direction on the semiconductor substrate and extending in the second direction, a shortest distance between a corner portion of each of the semiconductor portions and each of the selection gate electrodes being longer than a shortest distance between the corner portion of the semiconductor portion and the word-line electrode in a cross section parallel to the second direction. | 12-23-2010 |
Noboru Ooike, Yokohama-Shi JP
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20150262688 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device according to one embodiment includes a control circuit. The control circuit is configured to apply, when reading data of a first selected memory cell provided in a ROM area, a first read voltage to a first selected word line, and apply a first read pass voltage lower than a second read pass voltage to a first non-selected word line, thus allowing for the ROM area reading operation of reading a threshold voltage set in the first selected memory cell. The control circuit is configured to apply, when reading data of a second selected memory cell provided in a normal storage area, a second read voltage to a second selected word line, and apply the second read pass voltage to a second non-selected word line, thus allowing for a normal storage area reading operation of reading a threshold voltage set in the second selected memory cell. | 09-17-2015 |
Sayaka Ooike, Aichi JP
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20110054063 | ORGANOSILICON COMPOUNDS WHICH HAVE OXETANYL GROUPS, AND A METHOD FOR THE PRODUCTION AND CURABLE COMPOSITIONS OF THE SAME - The object of the present invention is to provide an organosilicon compound having an oxetanyl group, which has a high proportion of an inorganic part in the structure, which, after production thereof, is stable with no gelling, and which has excellent storage stability when it is formed into a composition, and a production method thereof and a curable composition. The organosilicon compound is a compound having an oxetanyl group obtained by a method including a process in which a silicon compound A represented by the formula (1) and a silicon compound B having four siloxane bond-forming groups are subjected to hydrolysis and condensation at a ratio of 0.3 to 2.8 mol of silicon compound B based on 1 mol of silicon compound A. | 03-03-2011 |
20110071255 | CURABLE COMPOSITION AND PROCESS FOR PRODUCTION OF ORGANOSILICON COMPOUND - The present curable composition comprises an organosilicon compound produced by hydrolysis copolycondensation of (A) a silicon compound R | 03-24-2011 |
Sayaka Ooike, Nagoya-Shi JP
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20130149455 | CURABLE COMPOSITION AND PROCESS FOR PRODUCTION OF ORGANOSILICON COMPOUND - The present curable composition comprises an organosilicon compound produced by hydrolysis copolycondensation of (A) a silicon compound R | 06-13-2013 |
Shinsuke Ooike, Osaka-Shi JP
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20100286127 | ANTITUMOR AGENT - The present invention relates to a novel antitumor agent containing a compound that inhibits binding between acetylated histone and a bromodomain-containing protein, preferably a thienotriazolodiazepine compound represented by the following formula (I) | 11-11-2010 |
20130261109 | ANTITUMOR AGENT - The invention provides a method of inhibiting binding between acetylated histone and a bromodomain-containing protein in a mammal, as well as a method of shrinking or killing of cancer cells expressing a bromodomain-containing protein or inhibiting the growth of cancer cells expressing a bromodomain-containing protein in a mammal. The methods involve administering an effective amount of (S)-2-[4-(4-chlorophenyl)-2,3,9-trimethyl-6H-thieno[3,2-f][1,2,4]triazolo[4,3-a][1,4]diazepin-6-yl]-N-(4-hydroxyphenyl)acetamide or a dihydrate thereof to the mammal. | 10-03-2013 |
Shinsuke Ooike, Osaka JP
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20090292121 | Cyanopyridine derivative and use thereof as medicine - A therapeutic drug for cancer containing a substance selected from the group consisting of a novel cyanopyridine derivative, a pharmaceutically acceptable salt, a hydrate, a water adduct and a solvate as an active ingredient can be provided. | 11-26-2009 |