Patent application number | Description | Published |
20090291458 | Method for Determining the Status of an Individual - Methods of determining status of an individual based on the use of biological specimen and analysis of reference population of cells are described. | 11-26-2009 |
20100009364 | Methods for diagnosis, prognosis and methods of treatment - The present invention provides an approach for the determination of the activation states of a plurality of proteins in single cells. This approach permits the rapid detection of heterogeneity in a complex cell population based on activation states, expression markers and other criteria, and the identification of cellular subsets that exhibit correlated changes in activation within the cell population. Moreover, this approach allows the correlation of cellular activities or properties. In addition, the use of modulators of cellular activation allows for characterization of pathways and cell populations. Several exemplary diseases that can be analyzed using the invention include AML, MDS, and MPN. | 01-14-2010 |
20130130279 | METHODS FOR DIAGNOSIS, PROGNOSIS AND METHODS OF TREATMENT - The present invention provides an approach for the determination of the activation states of a plurality of proteins in single cells. This approach permits the rapid detection of heterogeneity in a complex cell population based on activation states, expression markers and other criteria, and the identification of cellular subsets that exhibit correlated changes in activation within the cell population. Moreover, this approach allows the correlation of cellular activities or properties. In addition, the use of modulators of cellular activation allows for characterization of pathways and cell populations. Several exemplary diseases that can be analyzed using the invention include AML, MDS, and MPN. | 05-23-2013 |
20150017119 | METHODS FOR DIAGNOSIS, PROGNOSIS AND METHODS OF TREATMENT - The present invention provides an approach for the determination of the activation states of a plurality of proteins in single cells. This approach permits the rapid detection of heterogeneity in a complex cell population based on activation states, expression markers and other criteria, and the identification of cellular subsets that exhibit correlated changes in activation within the cell population. Moreover, this approach allows the correlation of cellular activities or properties. In addition, the use of modulators of cellular activation allows for characterization of pathways and cell populations. Several exemplary diseases that can be analyzed using the invention include AML, MDS, and MPN. | 01-15-2015 |
Patent application number | Description | Published |
20130145292 | CONSISTENT PRESENTATION OF CONTENT AND PASSIVE RELEVANCE DETERMINATION OF CONTENT RELATIONSHIP IN AN ON-LINE COMMERCE SYSTEM - A platform allows experts, for example home improvement professionals, to upload their portfolios, i.e. content such as photos, videos, text, and sound, to a publicly available resource, such as a Web browser accessible, network based commerce system. Users may then browse the content, for example by room, style, and metro area. The content is arranged in collections that are in part passively sorted, based upon user relevance. Tags are shown on objects, for example within photos, for which there is more information. In the case of a movable display device, the tags can simulate the physics of real tags, for example they can move back and forth when the device is shaken. In another embodiment, a snap point is set to impart either a scrolling transition or a step transition between display pages, based upon user scroll activity. | 06-06-2013 |
20140222608 | METHOD AND APPARATUS FOR ESTIMATING HOME REMODELING COSTS - A home remodeling cost estimator tool is used to create a cost breakdown for use when remodeling a house or a room, based on user interaction with photos, for example from such sites as Houzz.com and other proprietary data sources. For any photo in a photo database for such design sites, a user can work with the estimator to generate a price estimate and a breakdown for a building project. | 08-07-2014 |
Patent application number | Description | Published |
20130031635 | System, Method and Computer Readable Medium for Evaluating a Security Characteristic - A method, system and computer program product for evaluating an IDP entity, the method includes evaluating an effect of at least one IDP rule applied by the IDP entity on legitimate traffic, based upon a network model; evaluating an effect of at least one IDP rule applied by the IDP entity based upon a network model and an attack model; determining an effectiveness of the IDP entity in response to the evaluated effects. | 01-31-2013 |
20130219503 | SYSTEM, METHOD AND COMPUTER READABLE MEDIUM FOR EVALUATING POTENTIAL ATTACKS OF WORMS - A method for evaluating potential attacks of worms, the method includes: associating, in response to information representative of a network and of worm entities, between worm entities and potential worm sources to provide associated worm sources; determining potential worm attacks that start from the associated worm sources; and evaluating at least one potential worm attack security metric associated with the potential worm attacks. | 08-22-2013 |
20130312101 | Method for simulation aided security event management - A method for simulation aided security event management, the method comprises: generating attack simulation information that comprises multiple simulation data items of at least one data item type out of vulnerability instances data items, attack step data items and attack simulation scope data items; wherein the generating of attack simulation information is responsive to a network model, at least one attack starting point and attack action information; identifying security events in response to a correlation between simulation data items and event data; and prioritizing identified security events. | 11-21-2013 |
20140150050 | METHOD, A SYSTEM, AND A COMPUTER PROGRAM PRODUCT FOR MANAGING ACCESS CHANGE ASSURANCE - A method for evaluating a deployment of a network access change request, the method includes: (a) formatting a network access change request to provide a formatted network access change request; wherein the formatted network access change request includes multiple formatted request items; wherein the multiple formatted request items includes a requested access type, an address of an access source, an address of an access destination; (b) determining multiple relationships between the multiple formatted request items and corresponding items of at least one entity out of a network model and a current network policy; and (c) responding to the network access change request in response to the multiple determined relationships. | 05-29-2014 |
Patent application number | Description | Published |
20090233440 | Seed Layers for Metallic Interconnects - One embodiment of the present invention is a method for depositing two or more PVD seed layers for electroplating metallic interconnects over a substrate, the substrate including a patterned insulating layer which includes at least one opening surrounded by a field, the at least one opening having top corners, sidewalls, and bottom, the field and the at least one opening being ready for depositing one or more seed layers, and the method includes: (a) depositing by a PVD technique, in a PVD chamber, a continuous PVD seed layer over the sidewalls and bottom of the at least one opening, using a first set of deposition parameters; and (b) depositing by a PVD technique, in a PVD chamber, another PVD seed layer over the substrate, using a second set of deposition parameters, wherein (i) the second set of deposition parameters includes at least one deposition parameter which is different from any of the parameters in the first set of deposition parameters, or the second set of deposition parameters includes at least one deposition parameter whose value is different in the two sets of deposition parameters, (ii) at least one of the PVD seed layers includes a material selected from a group consisting of Cu, Ag, or alloys including one or more of these metals, (iii) the PVD seed layers have no substantial overhangs sealing or pinching-off the top corners of the at least one opening, (iv) the combined thickness of the seed layers over the field is sufficient to enable uniform electroplating across the substrate, and (v) the combined seed layers inside the at least one opening leave sufficient room for electroplating inside the at least one opening. | 09-17-2009 |
20090239372 | Seed Layers for Electroplated Interconnects - One embodiment of the present invention is a method for depositing two or more seed layers for electroplating metallic interconnects over a substrate, the substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the at least one opening having top corners, sidewalls, and bottom, the field and the at least one opening being ready for depositing one or more seed layers, and the method includes: (a) depositing a continuous seed layer over the sidewalls and bottom of the at least one opening using a first set of deposition parameters; and (b) depositing a second seed layer over the continuous seed layer using a second set of deposition parameters, wherein (i) the second set of deposition parameters includes at least one deposition parameter which is different from any of the parameters in the first set of deposition parameters, or the second set of deposition parameters includes at least one deposition parameter whose value is different in the two sets of deposition parameters, (ii) the continuous and second seed layers being sufficiently thick over the field to enable uniform electroplating across the substrate, and (iii) after depositing the seed layers, there is sufficient room for electroplating inside the at least one opening. | 09-24-2009 |
20100213614 | Methods for Passivating Metallic Interconnects - One or more embodiments of the present invention relates to a method for passivating metallic interconnects, said method including: forming a metallic conductor embedded in at least one surrounding dielectric layer, said metallic conductor including a metal or alloy chosen from a group consisting of Cu, Ag, and alloys including one or more of these metals, said metallic conductor and said at least one surrounding dielectric layer having top surfaces; and forming a capping passivation film directly on the top surface of the metallic conductor, but not over the top surface of the at least one surrounding dielectric layer, wherein said capping passivation film including one or more materials selected from the group consisting of copper sulfide, silver sulfide, copper selenide, silver selenide, copper telluride, and silver telluride, wherein the copper sulfide refers to CuS | 08-26-2010 |
20100215560 | Floating Si and/or Ge Foils - One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T | 08-26-2010 |
20100243462 | Methods for Activating Openings for Jets Electroplating - One embodiment of the present invention one embodiment of the present invention is a method for electrofilling a metal or alloy inside at least one opening surrounded by a field on a front surface of a substrate, wherein at least one surface inside the at least one opening includes an exposed metallic surface, said method including steps of: (a) immersing the substrate in an activation or wetting solution; (b) applying ultrasonic or megasonic vibrations to the substrate; and, after commencing applying ultrasonic or megasonic vibrations to the substrate, (c) applying high pressure jets of an electrolyte to the substrate, said electrolyte includes metallic ions of said metal or alloy; and (d) applying an electroplating current to the substrate to electroplate said metal or alloy inside the at least one opening. | 09-30-2010 |
20100288189 | Floating Semiconductor Foils - One embodiment of the present invention is a method for producing a silicon (Si) and/or germanium (Ge) foil, the method including: dissolving a Si and/or Ge source material in a molten metallic bath at an elevated temperature T | 11-18-2010 |
20110068470 | Apparatus For Making Interconnect Seed Layers And Products - An apparatus for depositing seed layers over a substrate, which substrate includes a patterned insulating layer with at least one opening surrounded by a field, and which opening has sidewalls, bottom surfaces and top corners, includes: a CVD chamber adapted to deposit one or more CVD seed layers over the substrate; a PVD chamber adapted to deposit one or more PVD seed layers over the substrate; and a controller which includes recipe information. The recipe information includes deposition sequence and process parameters for operation of the deposition chambers. The controller, in response to the recipe information, causes the CVD chamber to deposit a continuous CVD seed layer over the substrate, and causes the PVD chamber to deposit a PVD seed layer over the substrate, wherein: (a) the continuous CVD seed layer is continuous over the sidewalls and bottom surfaces of the at least one opening, (b) the continuous CVD seed layer has a thickness from about 20 Å to about 250 Å over the field, and (c) the controller causes the stopping of the deposition of the seed layers so as to leave room for electroplating inside the at least one opening. | 03-24-2011 |
20120126409 | SEED LAYERS FOR METALLIC INTERCONNECTS AND PRODUCTS - A method is disclosed for depositing multiple seed layers for metallic interconnects over a substrate, the substrate includes a patterned insulating layer which comprises an opening surrounded by a field, said opening has sidewalls and top corners, and the method including: depositing a continuous seed layer over the sidewalls, using a first set of deposition parameters; and depositing another seed layer over the substrate, including inside the at least one opening and over a portion of said field, using a second set of deposition parameters, wherein: the second set of deposition parameters includes one deposition parameter which is different from any parameters in the first set, or whose value is different in the first and second sets; the continuous seed layer has a thickness in a range from about 20 Å to not more than 250 Å over the field; and the combined seed layers leave sufficient room for electroplating inside the opening. | 05-24-2012 |
20140061919 | Electroplated Metallic Interconnects And Products - One embodiment of the present invention is a device including at least a portion of a void-free electroplated metallic interconnect embedded in an opening, said opening having sidewalls, said sidewalls include at least one dielectric layer, wherein the opening has an aspect ratio in a range from 7:1 to 20:1, and wherein the portion of the electroplated metallic interconnect includes a material selected from a group consisting of Cu, Ag, and alloys including at least one of these metals. | 03-06-2014 |
20140103538 | ENHANCED ELECTROCHEMICAL DEPOSITION FILLING - One embodiment is a method for void-free metallic electrofilling inside openings, said method includes: providing a substrate with at least one opening, the substrate includes an electrically conductive surface, including inside the at least one opening; immersing the substrate in an electrolyte contained in an ECD cell, the ECD cell includes at least one anode and a cathode, the cathode includes at least a portion of the conductive surface, the electrolyte includes plating metallic ions and at least one inhibitor additive, said metallic ions and at least one inhibitor additive having concentrations; providing electrolyte agitation across the substrate surface; and applying electroplating current density to the substrate; wherein the agitation, the concentrations, and the electroplating current density are such to produce void-free metallic electrofilling of the at least one opening, and wherein a height of electrodeposited surface bumps, or transition steps or humps, or transition spikes, is less than 140 nm. | 04-17-2014 |
20140197537 | Void-Free Metallic Filled High Aspect Ratio Openings - One embodiment is a device which includes at least one filled via or trench wherein the at least one filled via or trench includes void-free filled metal or alloy, and the filled via or trench has an aspect ratio in a range from 9:1 to about 28:1. | 07-17-2014 |