Patent application number | Description | Published |
20090288602 | Electrode and Vacuum Processing Apparatus - An electrode and a vacuum processing apparatus are provided that are capable of improving the film deposition rate and the uniformity of the distribution of the deposited film. The electrode includes a plurality of electrodes ( | 11-26-2009 |
20100033735 | WAVELENGTH SELECTION METHOD, FILM THICKNESS MEASUREMENT METHOD, FILM THICKNESS MEASUREMENT APPARATUS, AND SYSTEM FOR PRODUCING THIN FILM SILICON DEVICE - An object is to reduce film thickness measurement error. Illumination light having different wavelengths is radiated onto a plurality of samples in which thin films having different film qualities and film thicknesses are provided on substrates, evaluation values related to the amounts of transmitted light when the illumination light of each wavelength is radiated are measured, film thickness characteristics, showing the relationship between the evaluation values and the film thicknesses for each film quality, are formed at each wavelength based on the measurement results, and among the film thickness characteristics, a wavelength at which a measurement difference between the evaluation values caused by the film qualities is in a predetermined range is selected. | 02-11-2010 |
20100067010 | FILM QUALITY EVALUATION METHOD, APPARATUS THEREFOR, AND PRODUCTION SYSTEM FOR THIN-FILM DEVICE - An object is to improve production efficiency as well as reducing the burden on an operator. Light is radiated on a crystalline silicon film used for a thin-film silicon device, reflection light reflected by the crystalline silicon film is detected, a parameter of the luminance of the detected reflection light is measured, and film quality evaluation of the crystalline silicon film is performed in accordance with whether the parameter of the luminance is within a predetermined proper range or not. | 03-18-2010 |
20100116331 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING SAME - A photovoltaic device and a process for producing the device that enables a higher level of performance to be achieved at low cost. The photovoltaic device includes at least two laminated photovoltaic layers, and an intermediate layer that is disposed between the two photovoltaic layers and connects the two photovoltaic layers electrically and optically, wherein the surface of the intermediate layer has a plasma-resistant protective layer. | 05-13-2010 |
20100163100 | Photovoltaic Device and Process for Producing Same - A photovoltaic device with improved cell properties having a photovoltaic layer comprising microcrystalline silicon-germanium, and a process for producing the device. A buffer layer comprising microcrystalline silicon or microcrystalline silicon-germanium, and having a specific Raman peak ratio is provided between a substrate-side impurity-doped layer and an i-layer comprising microcrystalline silicon-germanium. | 07-01-2010 |
20100170565 | PHOTOVOLTAIC DEVICE AND METHOD FOR PRODUCING THE SAME - A photovoltaic device having improved conversion efficiency as a result of an increase in the open-circuit voltage is provided. The photovoltaic device comprises a photovoltaic layer having a stacked p-layer, i-layer and n-layer, wherein the p-layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 25%, and the crystallization ratio of the p-layer is not less than 0 but less than 3. Alternatively, the n-layer may be a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, wherein the crystallization ratio of the n-layer is not less than 0 but less than 3. Alternatively, an interface layer may be formed at the interface between the p-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 30%. Alternatively, an interface layer may be formed at the interface between the n-layer and the i-layer, wherein the interface layer is a nitrogen-containing layer comprising nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%. | 07-08-2010 |
20100177326 | FILM-THICKNESS MEASUREMENT METHOD AND APPARATUS THEREFOR, AND THIN-FILM DEVICE FABRICATION SYSTEM - Objects are to reduce the burden on an operator and to improve fabrication efficiency. A transparent conductive film or a transparent optical film formed on a substrate W is irradiated with line illumination light by means of a line illumination device 3, line reflected light reflected at the transparent conductive film or the transparent optical film is detected with a camera, a color evaluation value of the detected reflected light is measured, and a film thickness corresponding to the measured color evaluation value is obtained using a film-thickness characteristic in which the color evaluation value is associated with the film thickness. | 07-15-2010 |
20100200052 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING SAME - An object of the present invention is to provide a photovoltaic device and a process for producing such a photovoltaic device that enable a stable, high photovoltaic conversion efficiency to be achieved by using a transparent electrode having an optimal relationship between the resistivity and the transmittance. At least one transparent electrode ( | 08-12-2010 |
20100206373 | PHOTOVOLTAIC DEVICE - A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device | 08-19-2010 |
20100229935 | PHOTOVOLTAIC DEVICE - The short-circuit current of a photovoltaic device is improved by optimizing the transparent conductive layer. A photovoltaic device comprising a first transparent electrode layer, an electric power generation layer, a second transparent electrode layer and a back electrode layer on a substrate, wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the light absorptance for the second transparent electrode layer in a wavelength region from not less than 600 nm to not more than 1,000 nm is not more than 1.5%. Also, a photovoltaic device wherein the film thickness of the second transparent electrode layer is not less than 80 nm and not more than 100 nm, and the reflectance for light reflected at the second transparent electrode layer and the back electrode layer is not less than 91% in the wavelength region from not less than 600 nm to not more than 1,000 nm. | 09-16-2010 |
20100269897 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING SAME - A photovoltaic device that exhibits improved light absorption properties for the electric power generation layer and a process for producing such a photovoltaic device are provided by optimizing the surface shape of the back surface structure. A photovoltaic device | 10-28-2010 |
20110019190 | RESISTIVITY TESTING METHOD AND DEVICE THEREFOR - An object is to efficiently measure the resistivity of a transparent conductive film with high accuracy in a non-destructive and non-contact manner. Provided is a resistivity testing device that includes a light emitting device that emits p-polarized emission light having a wavelength selected by a preliminarily performed test-condition selecting method toward a transparent conductive film, formed on a light-transmissive substrate conveyed along a manufacturing line, from a film-surface side at an incidence angle selected by the method; a light detecting device that detects reflected light reflected at the transparent conductive film; and an information processor that calculates an evaluation value related to the amount of light of the reflected light with respect to the wavelength on the basis of the intensity of the detected light and obtains a resistivity from the calculated evaluation value by using a correlation characteristic in which the evaluation value and the resistivity are associated with each other in advance. | 01-27-2011 |
20110100444 | PHOTOVOLTAIC DEVICE AND PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE - A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6. | 05-05-2011 |
20110111551 | PHOTOELECTRIC CONVERSION DEVICE FABRICATION METHOD - Provided is a photoelectric conversion device fabrication method that realizes both high productivity and high conversion efficiency by rapidly forming an n-layer having good coverage. The fabrication method for a photoelectric conversion device includes a step of forming a silicon photoelectric conversion layer on a substrate by a plasma CVD method. In the fabrication method for the photoelectric conversion device, the step of forming the photoelectric conversion layer includes a step of forming an i-layer formed of crystalline silicon and a step of forming, on the i-layer, an n-layer under a condition with a hydrogen dilution ratio of 0 to 10, inclusive. | 05-12-2011 |
20110120521 | PHOTOELECTRIC CONVERSION DEVICE - Provided is a photoelectric conversion device in which the conductivity after hydrogen-plasma exposure is set within an appropriate range, thereby suppressing the leakage current and improving the conversion efficiency. A photoelectric conversion device includes, on a substrate, a photoelectric conversion layer having at least two power generation cell layers, and an intermediate contact layer provided between the power generation cell layers. The intermediate contact layer mainly contains a compound represented by Zn | 05-26-2011 |
20110126903 | PHOTOVOLTAIC DEVICE - A photovoltaic device in which, by optimizing the structures for a substrate-side transparent electrode layer, an intermediate layer, and a back electrode layer, the extracted electrical current can be increased. The photovoltaic device includes at least a transparent electrode layer, a photovoltaic layer and a back electrode layer provided on a substrate, wherein the surface of the transparent electrode layer on which the photovoltaic layer is disposed includes a textured structure composed of ridges and a fine micro-texture provided on the surface of the ridges, the pitch of the textured structure is not less than 1.2 μm and not more than 1.6 μm, the height of the ridges is not less than 0.2 μm and not more than 0.8 μm, the pitch between peaks in the fine micro-texture is not less than 0.05 μm and not more than 0.14 μm, and the height of peaks is not less than 0.02 μm and not more than 0.1 μm. | 06-02-2011 |
20110194113 | THIN-FILM INSPECTION APPARATUS AND INSPECTION METHOD - An object is to reduce the effect of a film thickness variation on the substrate surface of a thin film and improve the measuring accuracy. Provided are a light source that radiates single-wavelength light to an inspection-target substrate (W), which is formed by forming a thin film on a glass substrate from the glass substrate side; a light receiving element that is disposed such that the light receiving axis intersects with the optical axis of illumination light emitted from the light source at a predetermined inclination angle and that receives diffused transmitted light that has been transmitted through the inspection-target substrate W; and a computer ( | 08-11-2011 |
20110205556 | THIN-FILM INSPECTION APPARATUS AND METHOD THEREFOR - A thin-film inspection apparatus includes a storage section ( | 08-25-2011 |
20110303289 | PROCESS FOR PRODUCING PHOTOVOLTAIC DEVICE AND PHOTOVOLTAIC DEVICE - A process for producing a photovoltaic device that suppresses variations in the photovoltaic conversion efficiency within the plane of a large surface area substrate, suppresses fluctuations in the module power output between production lots, and enables an improvement in the productivity. A process for producing a photovoltaic device that includes forming a silicon-based photovoltaic layer on a substrate using a plasma enhanced CVD method that employs a gas containing a silane-based gas and hydrogen gas as the raw material gas, under conditions in which the flow rate of the hydrogen gas per unit surface area of the substrate is not less than 80 slm/m | 12-15-2011 |
20120012168 | PHOTOVOLTAIC DEVICE - A film thickness configuration for a triple-junction photovoltaic device that is suitable for obtaining high conversion efficiency. The photovoltaic device comprises, on top of a substrate, a transparent electrode layer, a photovoltaic layer containing three stacked cell layers having pin junctions, and a back electrode layer, wherein an incident section cell layer provided on the light-incident side has an amorphous silicon i-layer having a thickness of not less than 100 nm and not more than 200 nm, a bottom section cell layer provided on the opposite side from the light-incident side has a crystalline silicon-germanium i-layer having a thickness of not less than 700 nm and not more than 1,600 nm, and the ratio of germanium atoms relative to the sum of germanium atoms and silicon atoms within the crystalline silicon-germanium i-layer is not less than 15 atomic % and not more than 25 atomic %, and a middle section cell layer provided between the incident section cell layer and the bottom section cell layer has a crystalline silicon i-layer having a thickness of not less than 1,000 nm and not more than 2,000 nm. | 01-19-2012 |