Patent application number | Description | Published |
20090295699 | DRIVE CIRCUIT, ACTIVE MATRIX SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE - Off-leak current of a TFT, required for a drive circuit configured with a TFT of a single conductivity type, is realized with simple manufacturing steps. The impurity concentration of a source region and a drain region of a TFT is set between 2*10 | 12-03-2009 |
20110024755 | THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR USED FOR THE SAME - A thin film transistor (TFT) substrate includes first and second TFTs on the same substrate. The first TFT has a feature that a lower conductive layer or a bottom gate electrode layer is provided between the substrate and a first insulating layer while an upper conductive layer or a top gate electrode layer is disposed on a second insulating layer formed on a semiconductor layer which is formed on the first insulating layer. The first conductive layer has first and second areas such that the first area overlaps with the first conductive layer without overlapping with the semiconductor layer while the second area overlaps with the semiconductor layer, and the first area is larger than the second area while the second insulating layer is thinner than the first insulating layer. The second TFT has the same configuration as the first TFT except that the gate electrode layer is eliminated. | 02-03-2011 |
20110198607 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current. | 08-18-2011 |
20130069097 | TOP GATE TYPE THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - The present invention provides a thin-film transistor manufactured on a transparent substrate having a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate; wherein the channel region having channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film; the light blocking film is divided across the channel region; and interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d). Thereby, the cost for manufacturing the thin-film transistor is low, and the photo leak current of the thin-film transistor is suppressed. | 03-21-2013 |
20130320454 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device capable of reducing an inter-source electrode resistance RSS(on) and reducing a chip size is provided. A semiconductor device according to the present invention includes a chip partitioned into three areas including a first area, a second area, and a third area, and a common drain electrode provided on a back surface of the chip, in which the second area is formed between the first and third areas, a first MOSFET is formed in the first area and the third area, and a second MOSFET is formed in the second area. | 12-05-2013 |