Patent application number | Description | Published |
20080229259 | Design flow for shrinking circuits having non-shrinkable IP layout - A method for processing an integrated circuit is provided. The method includes providing a first integrated circuit having a first scale, wherein the first integrated circuit comprises a shrinkable circuit comprising a first intellectual property (IP) layout, and a non-shrinkable circuit comprising a second IP layout; and generating a second integrated circuit having a second scale smaller than the first scale. The step of generating the second integrated circuit includes shrinking the shrinkable integrated circuit to the second scale. The method further includes merging the second IP layout with the non-shrinkable circuit to generate a final integrated circuit. | 09-18-2008 |
20080270813 | Mother/daughter switch design with self power-up control - System and method for providing power to integrated circuitry with good power-on responsive time and reduced power-on transient glitches. A preferred embodiment comprises a daughter switch coupled to a circuit block, a first control circuit coupled to the daughter circuit, a second control circuit coupled to the first control circuit, and a mother circuit coupled to the circuit block and to the second control circuit. After the daughter switch is turned on by a control signal, the mother switch is not turned on until the daughter switch has discharged (charged) the voltage potential across power rails of the mother circuit to a point where glitches are minimized. The second control circuit turns on the mother circuit when the reduced voltage potential is reached, with a signal produced by the first control circuit reflects the voltage potential. Furthermore, a bypass circuit can be used to reduce leakage current. | 10-30-2008 |
20090278251 | Pad Structure for 3D Integrated Circuit - This invention discloses an I/O pad structure in an integrated circuit (IC) which comprises a first vertical region in the IC including a top metal layer and one or more semiconductor devices formed thereunder, the top metal layer in the first vertical region serving as a first pad, the semiconductor devices being electrically connected to the first pad, and a second vertical region in the IC next to the first vertical region including the top metal layer and one or more through-silicon-vias (TSVs) formed thereunder, the top metal layer in the second vertical region serving as a second pad, and no semiconductor devices being formed beneath the second pad, the TSVs being electrically connected to the second pad, wherein the first and the second pad are electrically connected through at least one metal layer. | 11-12-2009 |
20100058267 | PLACE-AND-ROUTE LAYOUT METHOD WITH SAME FOOTPRINT CELLS - This invention discloses a method for automatically generating an integrated circuit (IC) layout, the method comprises determining a first cell height, creating a plurality of standard cells all having the first cell height, and generating the IC layout from the plurality of standard cells by placing and routing thereof. | 03-04-2010 |
20100174933 | System and Method for Reducing Processor Power Consumption - A system and method for reducing active power in processors is disclosed. A method embodiment comprises the steps of determining when a particular logic block is inactive, determining the powered state of the particular logic block, isolating the particular logic block from a main processor core, and powering off the particular logic block. When the system needs the particular logic block, the method further comprises reactivating the block. A system embodiment comprises software and a processor coupled to a clock control module, an isolation control module and a header/footer module, operable to isolate a particular logic block and power off a particular logic block, thereby reducing power. Another embodiment comprises a logic module coupled to a clock by a clock gating module, an isolation module for isolating the logic module, a header/footer module for disabling power to the logic module, and a power and clock gating control module for controlling the clock gating module and the header/footer module. | 07-08-2010 |
20100242008 | METHOD FOR DUMMY METAL AND DUMMY VIA INSERTION - A method for dummy metal and dummy via insertion is provided. In one embodiment, dummy metals are inserted using a place and route tool, where the place and route tool has timing-awareness. Then, dummy vias arrays are inserted inside an overlap area of dummy metals using a design-rule-checking utility. Fine-grained dummy vias arrays are inserted in available space far away from main patterns. The dummy-patterns resulting from the inserted dummy vias are compressed using the design-rule-checking utility to reduce the size of a graphic data system file generated from the integrated circuit design. The dummy vias can be inserted with relaxed via spacing rules. The dummy metals are inserted with a constant line-end spacing between them for better process control and the maximum length of the dummy metal can be limited for smaller coupling effects. The dummy vias can have various sizes and a square or rectangular shape. | 09-23-2010 |
20100253382 | System and Method for Observing Threshold Voltage Variations - A system and method for observing threshold voltage variations are provided. A ring oscillator circuit comprises a plurality of inverters arranged in a sequential loop, a plurality of test circuits having devices under test, each coupled between a respective one of the inverters and a power supply. Each test circuit has a bypass field effect transistor (FET) having a first channel coupled between the power supply and a respective one of the inverters responsive to an individual enable signal, and a FET device under test having a second channel arranged in parallel to the first channel. A method is described for determining the threshold voltage of the device under test by disabling, for one of the inverters in the ring oscillator, the first FET device such that the device under test is coupled between the power supply and the respective inverter and affects the operating frequency of the ring oscillator. | 10-07-2010 |
20110035715 | SYSTEM AND METHOD FOR ON-CHIP-VARIATION ANALYSIS - Apparatus is provided for performing timing analysis on a circuit. A first storage device portion stores a state dependent stage weight for each of a rising time arc and a falling time arc of each of a plurality of cells in a cell library. An adder is provided for calculating a sum of the state dependent stage weights for each of the cells that are included in a circuit path. A second storage device portion stores a table containing on chip variation (OCV) derating factors. The table is indexed by values of the sum. A total path delay is calculated for the circuit path, based on the OCV derating factor corresponding to the sum of the state dependent stage weights for the cells in the circuit path. | 02-10-2011 |
20110072405 | Chip-Level ECO Shrink - In a method of forming an integrated circuit, a layout of a chip representation including a first intellectual property (IP) is provided. Cut lines that overlap, and extend out from, edges of the first IP, are generated. The cut lines divide the chip representation into a plurality of circuit regions. The plurality of circuit regions are shifted outward with relative to a position of the first IP to generate a space. The first IP is blown out into the space to generate a blown IP. A direct shrink is then performed. | 03-24-2011 |
20110083115 | ROBUST METHOD FOR INTEGRATION OF BUMP CELLS IN SEMICONDUCTOR DEVICE DESIGN - A system and method for computer-aided design of semiconductor integrated circuit devices provides for having dummy vias beneath UBM of bump cells to prevent delamination at the bump cell sites during bonding. The dummy vias are inserted into the design and bump cell placement occurs during the floorplanning stage and prior to placement and routing of the active integrated circuit components. In this manner, a sufficiently high via density is achieved and design information on the bump cells including the dummy vias is provided to a computer-aided design, CAD, system along with program instructions for carrying out the indicated sequence of design operations. | 04-07-2011 |
20120036489 | DESIGN AND VERIFICATION OF 3D INTEGRATED CIRCUITS - A method of designing and verifying 3D integrated circuits (3D IC) including providing a first layout corresponding to a first device of a 3D IC. The first layout includes a first interface layer. A second layout corresponding to a second device of the 3D IC is also provided. The second layout includes a second interface layer. A verification of the 3D is performed by verifying the first and second interface layers. The verification includes performing at least one of a design rule check (DRC) or a layout-versus-schematic (LVS) on the first and/or second interface layers. | 02-09-2012 |
20120084745 | Design Method for Non-Shrinkable IP Integration - A method of designing integrated circuits includes providing a design of an integrated circuit at a first scale, wherein the integrated circuit includes a shrinkable circuit including a first intellectual property (IP); and a non-shrinkable circuit including a second IP having a hierarchical structure. A marker layer is formed to cover the non-shrinkable circuit, wherein the shrinkable circuit is not covered by the marker layer. The electrical performance of the non-shrinkable circuit is simulated using a simulation tool, wherein the simulated non-shrinkable circuit is at a second scale smaller than the first scale. | 04-05-2012 |
20130014070 | SYSTEMS AND METHODS FOR CREATING FREQUENCY-DEPENDENT NETLIST - A method includes creating a technology file including data for an integrated circuit including at least one die coupled to an interposer and a routing between the at least one die and the interposer, b) creating a netlist including data approximating at least one of capacitive or inductive couplings between conductors in the at least one die and in the interposer based on the technology file, c) simulating a performance of the integrated circuit based on the netlist, d) adjusting the routing between the at least one die and the interposer based on the simulation to reduce the at least one of the capacitive or the inductive couplings, and e) repeating steps c) and d) to optimize the at least one of the capacitive or inductive couplings. | 01-10-2013 |
20130069242 | ARRANGEMENT OF THROUGH-SUBSTRATE VIAS FOR STRESS RELIEF AND IMPROVED DENSITY - A semiconductor device structure for a three-dimensional integrated circuit has a semiconductor substrate having a plurality of through-substrate vias provided in the substrate, wherein three or more of the plurality of through-substrate vias are arranged in a hexagonal packing array with respect to their design-rule circle. | 03-21-2013 |
20130139120 | COMPUTER IMPLEMENTED SYSTEM AND METHOD FOR LEAKAGE CALCULATION - A tool includes one or more machine readable storage mediums encoded with data. The data include a list of standard cells included in an integrated circuit (IC) design The data include a nominal leakage value approximating a respective median leakage value for each of the plurality of standard cells at a predetermined temperature and voltage. The data include at least one table including adjustment factors for calculating leakage based on voltage, temperature and process variations. The table includes a respective statistical scaling factor, for computing a mean leakage corresponding to a given median leakage. A processor is programmed to calculate and output a total IC leakage for the IC design at an input voltage and input temperature, based on the list, the nominal leakage values, the input voltage, the input temperature and at least one of the adjustment factors. | 05-30-2013 |
20130304449 | SYSTEM AND METHOD OF ELECTROMIGRATION AVOIDANCE FOR AUTOMATIC PLACE-AND- ROUTE - A method includes identifying at least one local power segment of a circuit, estimating at least one performance parameter of the at least one power segment based on a computer-based simulation of the circuit, and changing a design of the circuit based on at least one electromigration avoidance strategy if the at least one parameter is greater than or equal to a threshold value. A data file representing the circuit is stored if the at least one parameter is less than the threshold value. | 11-14-2013 |
20130326438 | LAYOUT MODIFICATION METHOD AND SYSTEM - A method comprises providing a non-transitory, machine-readable storage medium storing a partial netlist of at least a portion of a previously taped-out integrated circuit (IC) layout, representing a set of photomasks for fabricating an IC having the IC layout such that the IC meets a first specification value. A computer identifies a proper subset of a plurality of first devices in the IC layout, such that replacement of the proper subset of the first devices by second devices in a revised IC layout satisfies a second specification value different from the first specification value. At least one layout mask is generated and stored in at least one non-transitory machine readable storage medium, accessible by a tool for forming at least one additional photomask, such that the set of photomasks and the at least one additional photomask are usable to fabricate an IC according to the revised IC layout. | 12-05-2013 |
20130339911 | STITCH AND TRIM METHODS FOR DOUBLE PATTERNING COMPLIANT STANDARD CELL DESIGN - A method for creating double patterning compliant integrated circuit layouts is disclosed. The method allows patterns to be assigned to different masks and stitched together during lithography. The method also allows portions of the pattern to be removed after the process. | 12-19-2013 |
20140019930 | SEMICONDUCTOR DEVICE DESIGN METHOD, SYSTEM AND COMPUTER PROGRAM PRODUCT - In a semiconductor device design method performed by at least one processor, at least one first parasitic parameter between electrical components inside a region of a layout of a semiconductor device and at least one second parasitic parameter between electrical components outside the region of the layout are extracted by different tools. The extracted parasitic parameters are incorporated into the layout. | 01-16-2014 |
20140053118 | COMPRESSION METHOD AND SYSTEM FOR USE WITH MULTI-PATTERNING - A method comprises (a) providing an integrated circuit (IC) layout comprising data representing a plurality of circuit patterns to be formed on or in a single layer of an IC by multi-patterning; (b) dividing the plurality of circuit patterns into two or more groups; (c) assigning the circuit patterns within each group to a respective mask to provide mask assignment data, for forming each group of circuit patterns on or in the single layer of the IC; (d) compressing the mask assignment data; and (e) storing the compressed mask assignment data to a non-transitory machine readable storage medium for use by an electronic design automation tool configured for reconstructing the mask assignment data from the compressed data. | 02-20-2014 |
20140059504 | METHOD AND SYSTEM FOR REPLACING A PATTERN IN A LAYOUT - A received layout identifies a plurality of circuit components to be included in an integrated circuit (IC) layer for double patterning the layer using two photomasks, the layout including a plurality of first patterns to be included in the first photomask and at least one second pattern to be included in the second photomask. A selected one of the first patterns has first and second endpoints, to be replaced by a replacement pattern connecting the first endpoint to a third endpoint. At least one respective keep-out region is provided adjacent to each respective remaining first pattern except for the selected first pattern. Data are generated representing the replacement pattern, such that no part of the replacement pattern is formed in any of the keep-out regions. Data representing the remaining first patterns and the replacement pattern are output. | 02-27-2014 |
20140137062 | PATTERN MATCHING BASED PARASITIC EXTRACTION WITH PATTERN REUSE - The present disclosure relates to a method and apparatus for accurate RC extraction. A pattern database is configured to store layout patterns and their associated 3D extraction parameters. A pattern-matching tool is configured to partition a design into a plurality of patterns, and to search the pattern database for a respective pattern and associated 3D extraction parameters. If the respective pattern is already stored in the pattern database, then the associated 3D extraction parameters stored in the database are assigned to the respective pattern without the need to extract the respective pattern. If the respective pattern is not stored in the pattern database, then the extraction tool extracts the pattern and stores its associated 3D extraction parameters in the pattern database for future use. In this manner a respective pattern is extracted only once for a given design or plurality of designs. Moreover, the extraction result may be applied multiple times for a given design simultaneously, speeding up computation time. The extraction result may also be applied to a plurality of designs simultaneously. | 05-15-2014 |
20140165020 | METHOD OF FORMING A LAYOUT INCLUDING CELLS HAVING DIFFERENT THRESHOLD VOLTAGES, A SYSTEM OF IMPLEMENTING AND A LAYOUT FORMED - A method including developing a circuit schematic diagram, the circuit schematic diagram including a plurality of cells. The method further includes generating cell placement rules for the plurality of cells based on the circuit schematic diagram and developing a circuit layout diagram for the plurality of cells based on the cell placement rules. The method further includes grouping the plurality of cells of the circuit layout diagram based on threshold voltages and inserting threshold voltage compliant fillers into the circuit layout diagram. A system for implementing the method is described. A layout formed by the method is also described. | 06-12-2014 |
20140215428 | DOUBLE PATTERNING TECHNOLOGY (DPT) LAYOUT ROUTING - One or more techniques or systems for determining double patterning technology (DPT) layout routing compliance are provided herein. For example, a layout routing component of a system is configured to assign a pin loop value to a pin loop. In some embodiments, the pin loop value is assigned based on a mask assignment of a pin of the pin loop. In some embodiments, the pin loop value is assigned based on a number of nodes associated with the pin loop. DPT compliance or a DPT violation is determined for the pin loop based on the pin loop value. In this manner, odd loop detection associated with DPT layout routing is provided because a DPT violation results in generation of an additional instance of a net, for example. Detecting an odd loop allows a design to be redesigned before fabrication, where the odd loop would present undesired issues. | 07-31-2014 |
20140239410 | Integrated Circuit with Standard Cells - A die includes a plurality of rows of standard cells. Each of all standard cells in the plurality of rows of standard cells includes a transistor and a source edge, wherein a source region of the transistor is adjacent to the source edge. No drain region of any transistor in the each of all standard cells is adjacent to the source region. | 08-28-2014 |
20140239412 | Channel Doping Extension beyond Cell Boundaries - An integrated circuit includes a first and a second standard cell. The first standard cell includes a first gate electrode, and a first channel region underlying the first gate electrode. The first channel region has a first channel doping concentration. The second standard cell includes a second gate electrode, and a second channel region underlying the second gate electrode. The second channel region has a second channel doping concentration. A dummy gate includes a first half and a second half in the first and the second standard cells, respectively. The first half and the second half are at the edges of the first and the second standard cells, respectively, and are abutted to each other. A dummy channel is overlapped by the dummy gate. The dummy channel has a third channel doping concentration substantially equal to a sum of the first channel doping concentration and the second channel doping concentration. | 08-28-2014 |
20140245248 | Cell and Macro Placement on Fin Grid - A die includes at least one standard cell, which includes a first boundary and a second boundary opposite to the first boundary. The first boundary and the second boundary are parallel to a first direction. The at least one standard cell further includes a first plurality of FinFETs including first semiconductor fins parallel to the first direction. The die further includes at least one memory macro, which has a third boundary and a fourth boundary opposite to the third boundary. The third boundary and the fourth boundary are parallel to the first direction. The at least one memory macro includes a second plurality of FinFETs including second semiconductor fins parallel to the first direction. All semiconductor fins in the at least one standard cell and the at least one memory macro have pitches equal to integer times of a minimum pitch of the first and the second semiconductor fins. | 08-28-2014 |
20140245251 | Design Optimization for Circuit Migration - An embodiment of the present invention is a computer program product for providing an adjusted electronic representation of an integrated circuit layout. The computer program product has a medium with a computer program embodied thereon. Further, the computer program comprises computer program code for providing full node cells from a full node netlist, computer program code for scaling the full node cells to provide shrink node cells, computer program code for providing a timing performance of the full node cells and the shrink node cells, computer program code for comparing the timing performance of the full node cells to the timing performance of the shrink node cells, and computer program code for providing a first netlist. | 08-28-2014 |
20140258952 | Cell Having Shifted Boundary and Boundary-Shift Scheme - An embodiment cell shift scheme includes abutting a first transistor cell against a second transistor cell and shifting a place and route boundary away from a polysilicon disposed between the first transistor cell and the second transistor cell. In an embodiment, the cell shift scheme includes shifting the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist. | 09-11-2014 |
20140282337 | SEMICONDUCTOR DEVICE DESIGN METHOD, SYSTEM AND COMPUTER PROGRAM PRODUCT - A semiconductor device design method performed by at least one processor comprises extracting, using a resistance and capacitance (RC) extraction tool, at least one first parasitic capacitance among electrical components inside one or more regions of a plurality of regions in a layout of a semiconductor device. The method also comprises extracting, using the RC extraction tool, at least one second parasitic capacitance among electrical components outside the regions of the plurality of regions. The method further comprises combining, using a netlist generator tool, the extracted first and second parasitic capacitances into a netlist representing the layout. The RC extraction tool is configured to extract the first parasitic capacitances inside at least one region of the plurality of regions using a methodology more accurate than that for extracting the second parasitic capacitances. | 09-18-2014 |
20140298284 | STANDARD CELL DESIGN LAYOUT - Among other things, one or more techniques and/or systems for performing design layout are provided. In an example, a design layout corresponds to a layout of a standard cell whose connectivity is described by a netlist. For example, the netlist specifies net types for respective vias of the standard cell. One or more connectivity rings are formed within the design layout to provide connectivity for one or more vias of the design layout. For example, a first connectivity ring is generated, such as from mandrel, to connect one or more ring one vias. A second connectivity ring is generated, such as from passive pattern, to connect one or more ring two vias. One or more cuts are generated within the design layout to isolate vias having different net types. In this way, the design layout is self-aligned double patterning (SADP) compliant. | 10-02-2014 |
20140351784 | LAYOUT MODIFICATION METHOD AND SYSTEM - A method comprises providing a non-transitory, machine-readable storage medium storing a partial netlist of at least a portion of a previously taped-out integrated circuit (IC) layout, representing a set of photomasks for fabricating an IC having the IC layout such that the IC meets a first specification value. A computer identifies a proper subset of a plurality of first devices in the IC layout, such that replacement of the proper subset of the first devices by second devices in a revised IC layout satisfies a second specification value different from the first specification value. At least one layout mask is generated and stored in at least one non-transitory machine readable storage medium, accessible by a tool for forming at least one additional photomask, such that the set of photomasks and the at least one additional photomask are usable to fabricate an IC according to the revised IC layout. | 11-27-2014 |
20140359544 | LAYOUT RE-DECOMPOSITION FOR MULTIPLE PATTERNING LAYOUTS - Among other things, one or more techniques and systems for layout re-decomposition of a new layout corresponding to a change order to an original layout associated with an integrated circuit are provided. The change order is applied to the original layout to create the new layout. The original layout comprises one or more original pattern portions assigned pattern colors that correspond to pattern masks. One or more new pattern portions within the new layout are assigned pattern colors such that the new layout has a relatively high color similarity with respect to the original layout. In this way, changes to the pattern masks are reduced, thus mitigating fabrication delay or costs that would otherwise result from significant changes to the pattern masks. | 12-04-2014 |
20150067624 | SYSTEM AND METHOD FOR LEAKAGE ESTIMATION FOR STANDARD INTEGRATED CIRCUIT CELLS WITH SHARED POLYCRYSTALLINE SILICON-ON-OXIDE DEFINITION-EDGE (PODE) - A system and method of producing an integrated circuit using abutted cells having shared polycrystalline silicon on an oxide definition region edge (PODE) includes modeling inter-cell leakage current in a plurality of different cells. Each of the plurality of different cells is abutted with another cell and having the shared PODE. The method also comprises verifying a pre-determined acceptable power consumption of the integrated circuit based on the inter-cell leakage current. | 03-05-2015 |