Patent application number | Description | Published |
20090093117 | METHOD OF MANUFACTURING SUBSTRATE - A method of manufacturing a substrate, includes: (a) forming the through hole by etching the silicon substrate from a first surface of the silicon substrate by a Bosch process; (b) forming a thermal oxide film such that the thermal oxide film covers the first surface of the silicon substrate, a second surface of the silicon substrate opposite to the first surface, and a surface of the silicon substrate corresponding to a side surface of the through hole, by thermally oxidizing the silicon substrate where the through hole is formed; (c) removing the thermal oxide film; (d) forming an insulating film such that the insulating film covers the first and second surfaces of the silicon substrate and the surface of the silicon substrate corresponding to the side surface of the through hole; and (e) forming the through electrode in the through hole on which the insulating film is formed. | 04-09-2009 |
20090095974 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package including a base body having a recessed portion for installing an electronic component on one surface, the recessed portion including an inner bottom surface, inclined surface and a shoulder part and a wiring pattern having one end positioned in the inner bottom surface of the recessed portion and the other end extending to an outside region of the recessed portion beyond the shoulder part of the recessed portion. The shoulder part of the recessed portion is a smoothly curved surface. | 04-16-2009 |
20090098712 | SUBSTRATE DIVIDING METHOD - A method of dividing a substrate | 04-16-2009 |
20090108411 | SILICON SUBSTRATE FOR PACKAGE - In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity. | 04-30-2009 |
20090115049 | SEMICONDUCTOR PACKAGE - A semiconductor package in which an electronic device chip is provided in a cavity of a silicon substrate stacked product constituted by stacking a plurality of silicon substrates. | 05-07-2009 |
20090284276 | PROBE CARD - A probe card is disclosed that includes a board having a first surface and a second surface facing away from each other and a through hole formed between the first and second surfaces; and a probe needle having a penetration part and a support part. The penetration part is placed in the through hole without contacting the board and projects from the first and second surfaces of the board. The support part is integrated with a first one of the end portions of the penetration part and connected to one of the first and second surfaces of the board. The support part has a spring characteristic. The penetration part is configured to have a second one of its end portions come into contact with an electrode pad of a semiconductor chip at the time of conducting an electrical test on the semiconductor chip. | 11-19-2009 |
20100001304 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light emitting diode includes an LED element, a fluorescent material provided so as to cover the LED element, a substrate on which the LED element is mounted and made of ceramics or silicon, and a pair of electrode pads which are electrically connected to the LED element on the substrate. | 01-07-2010 |
20100038772 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package includes a wiring board and a semiconductor device mounted on the wiring board. At least one penetration hole extends from one surface of the semiconductor chip to an opposite surface of the semiconductor chip. A penetration electrode is situated inside the penetration hole without contacting a wall of the penetration hole. The penetration electrode has one end fixed to the one surface of the semiconductor chip and an opposite end protruding from the opposite surface of the semiconductor chip. A connection terminal is formed on the opposite end of the penetration electrode and electrically connected to the wiring board. | 02-18-2010 |
20100155928 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE SAME - A semiconductor package includes: a wiring board; and a semiconductor device which is formed on the wiring board; wherein the semiconductor device includes: a semiconductor chip; and a penetration electrode, one end of which is fixed on one plane of the semiconductor chip, and the other end of which penetrates the semiconductor chip and is fixed on the other plane of the semiconductor chip, the penetration electrode penetrating the semiconductor chip in such a manner that the penetration electrode is not contacted to a wall plane of the semiconductor chip by a space portion formed in the semiconductor chip; and the wiring board and the semiconductor device are electrically connected via the penetration electrode. | 06-24-2010 |
20100289140 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR PACKAGE - A semiconductor package includes a semiconductor device, and a wiring board where the semiconductor device is mounted. The semiconductor device includes a semiconductor substrate, a piercing electrode configured to pierce the semiconductor substrate and electrically connect the wiring board and the semiconductor device, and a ring-shaped concave part provided so as to surround the piercing electrode, the ring-shaped concave part being configured to open to a wiring board side of the semiconductor substrate. | 11-18-2010 |
20100289155 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a wiring board and a semiconductor device mounted on the wiring board. The semiconductor device includes a semiconductor substrate and a penetration electrode penetrating the semiconductor substrate. A cavity part is formed in the semiconductor substrate to isolate the penetration electrode from the semiconductor substrate. A connection terminal is provided at a position where the connection terminal does not overlap the penetration electrode in a plan view. The connection terminal electrically connects the semiconductor device to the wiring board. | 11-18-2010 |
20100321936 | LIGHTING APPARATUS - It is a lighting apparatus | 12-23-2010 |
20110032710 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device including a light-emitting element and a substrate where the light-emitting element is arranged. A housing part housing the light-emitting element and having a shape that is tapered upward from the substrate and a metal frame surrounding the light-emitting element and including the side face of the housing part made into an almost mirror-polished surface are provided on the substrate. | 02-10-2011 |
20110150405 | METHOD OF MANUFACTURING OPTICAL WAVEGUIDE, OPTICAL WAVEGUIDE AND OPTICAL TRANSMISSION DEVICE - A method for manufacturing an optical waveguide which includes a core configured to transmit an optical signal, and a mirror portion configured to reflect the optical signal, the method includes: forming a mask layer patterned in a predetermined shape, on a first crystal plane of a substrate made of a crystalline material; etching the first crystal plane by a wet-etching using the mask layer to form a groove having a plurality of crystal planes; providing a metallic reflection film on at least one of the plurality of crystal planes to form the mirror portion; and providing the groove with a core material to form the core. | 06-23-2011 |
20110156242 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - There is provided a method of manufacturing a semiconductor package. The method includes: (a) providing a silicon wafer comprising a first surface and a second surface opposite to the first surface; (b) forming vias through the silicon wafer in its thickness direction; (c) forming wiring patterns on the first surface of the silicon wafer such that the wiring patterns are electrically connected to the vias; (d) bonding a MEMS element wafer comprising MEMS elements onto the second surface of the silicon wafer such that the MEMS elements are electrically connected to the vias; (e) dividing the MEMS element wafer into the respective MEMS elements; (f) bonding a lid having concave portions therein onto the second surface of the silicon wafer such that the respective MEMS elements face a corresponding one of the concave portions; and (g) dicing the lid and the silicon wafer. | 06-30-2011 |
20110227218 | SILICON SUBSTRATE FOR PACKAGE - In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity. | 09-22-2011 |
20110272821 | Wiring Substrate Manufacturing Method and Wiring Substrate - A wiring substrate manufactured by thinning a silicon substrate, which is coated by an insulation film, from a lower surface to an upper surface to form a substrate body. The substrate body is etched using a resist, which includes an opening, as a mask and the insulation film as an etching stopper layer to form a through hole and a cover, which covers an opening of the through hole at the upper surface of the substrate body. In a state in which the cover is formed, a functional element is formed on the upper surface of a further insulation film at the upper side of the substrate body. Then, a through electrode is formed in at least the through hole. | 11-10-2011 |