Wang, Torrance
Guanghui Wang, Torrance, CA US
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20150029668 | Clamping Structure for Power Electronic Components - A clamping structure, including a base defined by a height, the base including a first end and a second end, wherein the first end and the second end are on opposite sides of one another; a first end wall situated on the first end of the base and a second end wall situated on the second end of the base; and at least one wall partition situated on the base between the first end wall and the second end wall to form the border of a first receiving area with the first end wall; wherein the first receiving area is generally rectangular or generally square in shape and includes two openings on two sides not bordered by either the at least one wall partition or the first end wall. | 01-29-2015 |
20150033775 | Apparatus and Method for Monitoring and Controlling Load Requirements - An apparatus and method for monitoring and controlling load requirements relating to a transport refrigeration unit, including receiving one or more power information from a load: a power consumption information or a power requirement information; receiving one or more state information from the load: state of a compressor, state of a condenser, state of a compressor fan, state of an evaporation fan or state of a condenser fan; determining the following based on one or more power information and one or more state information: a) an amount of power to supply, b) a time duration for supplying power, and c) an operational frequency. In one example, one or more auxiliary information are also used for the determination: a fluid leakage measurement, a current measurement, a timer measurement, a counter measurement, a controlled environment temperature, or an environmental temperature. | 02-05-2015 |
Jin S. Wang, Torrance, CA US
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20090283313 | SMALL FORM FACTOR MOLDED MEMORY CARD AND A METHOD THEREOF - A shape-molding structure of a memory card comprises a circuit substrate, at least one chip, and an encapsulant covering. The upper and lower surfaces of the circuit substrate have a circuit layer and a plurality of electric contacts, respectively. The chip is located on the upper surface of the circuit substrate and electrically connected with the circuit layer. The encapsulant covering is formed by using a mold to press encapsulant entering at least one encapsulant inlet provided on at least one side surface of the circuit substrate. The encapsulant covering encapsulates all the above components with only the electric contacts exposed. A trace mark of the encapsulant inlet remaining on the encapsulant covering is then cut to obtain a shape-molding structure of memory card with an smooth and intact outer appearance. | 11-19-2009 |
Jin Shen Wang, Torrance, CA US
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20120286297 | LED PACKAGE STRUCTURE AND MODULE THEREOF - The present invention discloses a LED package structure and a module thereof. The LED package structure comprises a metallic chip-carrying lead frame, a metallic anode lead frame, a metallic cathode lead frame and a forming resin. At least one LED chip is stuck to the metallic chip-carrying lead frame. The metallic anode lead frame and metallic cathode lead frame are arranged beside the metallic chip-carrying lead frame. The forming resin includes a top member, a first sidewall, and a second sidewall. The top member is arranged on the metallic chip-carrying lead frame and has an opening to reveal the LED chip. A reflective wall is formed along the opening. The first sidewall is arranged between the metallic chip-carrying lead frame and the metallic anode lead frame to join them. The second sidewall is arranged between the metallic chip-carrying lead frame and the metallic cathode lead frame to join them. | 11-15-2012 |
Jin Shian Wang, Torrance, CA US
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20130069091 | PROGRESSIVE-REFRACTIVITY ANTIREFLECTION LAYER AND METHOD FOR FABRICATING THE SAME - The present invention discloses a progressive-refractivity antireflection layer and a method for fabricating the same to eliminate light reflection occurring in an interface. The present invention is characterized in being fabricated via depositing a first material and a second material, and having a refractivity (n | 03-21-2013 |
20130171753 | PROGRESSIVE-REFRACTIVITY ANTIREFLECTION LAYER AND METHOD FOR FABRICATING THE SAME - The present invention discloses a progressive-refractivity antireflection layer and a method for fabricating the same to eliminate light reflection occurring in an interface. The present invention is characterized in being fabricated via depositing a first material and a second material, and having a refractivity (n | 07-04-2013 |
Kalem Gwoon Wang, Torrance, CA US
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20130076584 | High Performance (mini-cube) Indoor HDTV Antenna - This invention discloses a design and fabrication of a high performance compact antenna to receive public airwaves HDTV signals. The subject antenna consists of a high efficient cone shape broadband element excited over a small metal ground plane. A reflecting surface is implemented to help rejecting any unwanted multiple reflecting signals from the surrounding objects. Outstanding impedance characteristics and broad pattern coverage have been obtained. The pattern coverage is omnidirectional. The polarization is linear along the cone axis. This antenna design operates well in a weak signal environment and as a result the antenna can receive a large number of public channels. Although the antenna measures only 5¾×5¾×3¼ inches in a cubical enclosure or in a 6⅜ inches diameter by 3½ inches depth cylindrical body, the antenna packaged in either enclosure can receive more public channels than a much larger antenna twice of its size. Two invention antennas have been fabricated and tested and the test results confirmed that all antennas of either enclosure were performing well as expected. The invention antennas receive more than 130 public channels. | 03-28-2013 |
Qinghong W. Wang, Torrance, CA US
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20100019092 | SYSTEMS AND METHOD OF CONTROLLING A SPACECRAFT USING ATTITUDE SENSORS - A system for damping nutation and removing wobble of a spacecraft spinning about a given axis is provided. She system includes a sensor configured to determine three dimensional attitude measurements of the spacecraft, a processor operatively coupled to the sensor and configured to execute a process that facilitates aligning the spin axis with a spacecraft momentum vector. The processor, when executing the process, is programmed to receive spacecraft attitude data from the sensor, determine a torque command using the received attitude data, and control a momentum storage actuator on the spacecraft using the determined torque command such that an angular deviation about the given axis is reduced. | 01-28-2010 |
20110153122 | ON-LINE INERTIA ESTIMATION FOR USE IN CONTROLLING AN AEROSPACE VEHICLE - A system for controlling an aerospace vehicle using on-line inertia estimation may include an attitude sensor to measure an attitude of the aerospace vehicle. The system may also include a processor on board the aerospace vehicle. An inertia estimator operable on the processor may generate an on-line inertia estimate of the aerospace vehicle. A rate and attitude estimator operable on the processor may determine an angular position and angular velocity of the aerospace vehicle using the attitude measurement of the aerospace vehicle and the on-line inertia estimate for controlling movement and orientation of the aerospace vehicle without any rates of rotation of the aerospace vehicle being required. | 06-23-2011 |
Shing-Kuo Wang, Torrance, CA US
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20140110761 | Monolithic HBT with Wide-Tuning Range Varactor - A semiconductor device having a tunable capacitance is disclosed, comprising a substrate, a semiconductor base layer comprising a first semiconductor material having a first band-gap, and a plurality of successive semiconductor layers positioned between the substrate and the semiconductor base layer. The plurality of successive semiconductor layers includes a tuning layer comprising a second semiconductor material having a second band-gap larger than the first band-gap. Furthermore, the tuning layer has a non-uniform doping profile with doping concentration that varies in accordance with distance from a surface of the tuning layer proximal to the semiconductor base layer. The tunable capacitance of the semiconductor device varies in accordance with an applied voltage between the base layer and one of the successive semiconductor layers. | 04-24-2014 |
20150054036 | Gallium Arsenide Based Device Having Non-Gold Ohmic Contacts - A device includes a semiconductor die. The semiconductor die includes a plurality of semiconductor layers disposed on a GaAs substrate, including a first semiconductor layer having a first band-gap and a second semiconductor layer having a second band-gap. The semiconductor die further includes a contact layer disposed epitaxially upon the first semiconductor layer. The contact layer has a thickness that is less than a critical thickness. The second semiconductor layer is epitaxially disposed upon the contact layer. The contact layer has a third band-gap that is less than the first band-gap and the second band-gap. The semiconductor die further includes a conductive layer disposed upon the contact layer to form an ohmic contact. The conductive layer comprises one or more metal layers compatible with silicon processing techniques. | 02-26-2015 |