Patent application number | Description | Published |
20130221363 | Integrated Schottky Diode for HEMTs - An embodiment of a transistor device includes a compound semiconductor material on a semiconductor carrier and a source region and a drain region spaced apart from each other in the compound semiconductor material with a channel region interposed between the source and drain regions. A Schottky diode is integrated with the semiconductor carrier, and contacts extend from the source and drain regions through the compound semiconductor material. The contacts are in electrical contact with the Schottky diode so that the Schottky diode is connected in parallel between the source and drain regions. In another embodiment, the integrated Schottky diode is formed by a region of doped amorphous silicon or doped polycrystalline silicon disposed in a trench structure on the drain side of the device. | 08-29-2013 |
20130299842 | Contact Structures for Compound Semiconductor Devices - A semiconductor device includes a semiconductor body including a plurality of compound semiconductor layers and a two-dimensional charge carrier gas channel region formed in one of the compound semiconductor layers. The semiconductor device further includes a contact structure disposed in the semiconductor body. The contact structure includes a metal region and a doped region. The metal region extends into the semiconductor body from a first side of the semiconductor body to at least the compound semiconductor layer which includes the channel region. The doped region is formed in the semiconductor body between the metal region and the channel region so that the channel region is electrically connected to the metal region through the doped region. | 11-14-2013 |
20130334573 | Multi-Channel HEMT - A transistor device includes a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure. The 2DEGs form current channels of the transistor device. The transistor device further includes a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, and a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels. The transistor device also includes a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material. | 12-19-2013 |
20140042448 | High Breakdown Voltage III-Nitride Device - A semiconductor device includes a semiconductor body having a compound semiconductor material on a substrate. The compound semiconductor material has a channel region. A source region extends to the compound semiconductor material. A drain region also extends to the compound semiconductor material and is spaced apart from the source region by the channel region. An insulating region is buried in the semiconductor body between the compound semiconductor material and the substrate in an active region of the semiconductor device. The active region includes the source, the drain and the channel region of the device. The insulating region is discontinuous over a length of the channel region between the source region and the drain region. | 02-13-2014 |
20140367700 | High-Voltage Cascaded Diode with HEMT and Monolithically Integrated Semiconductor Diode - An embodiment of a cascaded diode having a breakdown voltage exceeding 300V includes an HEMT and a Si Schottky diode. The HEMT includes a gate, a drain, a source, and a two-dimensional electron gas channel region connecting the source and the drain and controlled by the gate. The HEMT has a breakdown voltage exceeding 300V. The Si Schottky diode is monolithically integrated with the HEMT. The Si Schottky diode includes a cathode connected to the source of the HEMT and an anode connected to the gate of the HEMT. The Si Schottky diode has a breakdown voltage less than 300V and a forward voltage less than or equal to 0.4V. The anode of the Si Schottky diode forms the anode of the cascaded diode and the drain of the HEMT forms the cathode of the cascaded diode. | 12-18-2014 |
20150115326 | Electronic Device - In an embodiment, an electronic device includes a semiconductor layer having a surface, a gate and a first current electrode on the surface and a dielectric layer extending between the gate and the first current electrode and including charged ions having a predetermined charge profile. | 04-30-2015 |
20150221748 | METHOD OF MANUFACTURING A MULTI-CHANNEL HEMT - A method of manufacturing a transistor device includes forming a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure, the 2DEGs forming current channels of the transistor device, forming a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, forming a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels, and forming a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material. | 08-06-2015 |
20150249134 | Group III-Nitride-Based Enhancement Mode Transistor - A Group III-nitride-based enhancement mode transistor includes a multi-heterojunction fin structure. A first side face of the multi-heterojunction fin structure is covered by a p-type Group III-nitride layer. | 09-03-2015 |
20150255590 | Group III-Nitride-Based Enhancement Mode Transistor Having a Heterojunction Fin Structure - A Group III-nitride-based enhancement mode transistor having a heterojunction fin structure and a corresponding semiconductor device are described. | 09-10-2015 |
20150311312 | Method of Manufacturing a High Breakdown Voltage III-Nitride Device - A method of manufacturing a semiconductor device includes forming a semiconductor body including a compound semiconductor material on a substrate, the compound semiconductor material having a channel region, forming a source region extending to the compound semiconductor material, forming a drain region extending to the compound semiconductor material and spaced apart from the source region by the channel region, and forming an insulating region buried in the semiconductor body below the channel region between the compound semiconductor material and the substrate in an active region of the semiconductor device such that the channel region is uninterrupted by the insulating region. The active region includes the source, the drain and the channel region. The insulating region is discontinuous over a length of the channel region between the source region and the drain region. | 10-29-2015 |
20160071967 | High-Electron-Mobility Transistor Having a Buried Field Plate - A high-electron-mobility field effect transistor is formed with a buffer region having a stepped lateral profile, the stepped lateral profile having first, second and third cross-sections of the buffer region, the first cross-section being thicker than the third cross-section and including a buried field plate, the second cross-section interposed between the first and third cross-sections and forming oblique angles with the first and third cross-sections. A barrier region is formed along the stepped lateral profile. The barrier region is separated from the buried field plate by a portion of the buffer region. The buffer region is formed from a first semiconductor material and the barrier region is formed from a second semiconductor material. The first and second semiconductor materials have different band-gaps such that an electrically conductive channel of a two-dimensional charge carrier gas arises at an interface between the buffer and barrier regions. | 03-10-2016 |
20160087089 | Non-Planar Normally Off Compound Semiconductor Device - A normally-off compound semiconductor device includes a first III-nitride semiconductor having a first sloped transition region in which the first III-nitride semiconductor transitions at an angle from a first level to a second level different than the first level, and a second III-nitride semiconductor on the first III-nitride semiconductor and having a different band gap than the first III-nitride semiconductor so that a two-dimensional charge carrier gas arises along an interface between the first and second III-nitride semiconductors. The normally-off compound semiconductor device further includes a gate on the second III-nitride semiconductor and a doped semiconductor over the first sloped transition region and interposed between the gate and the second III-nitride semiconductor. The two-dimensional charge carrier gas is disrupted along the first sloped transition region due solely to the slope of the first sloped transition region if steep enough, or also due to the presence of the doped semiconductor. | 03-24-2016 |
Patent application number | Description | Published |
20090282924 | Transducer Arrangement for a Nondestructive Material Testing System - A transducer arrangement for a nondestructive ultrasonic material testing system has a multiplicity of ultrasound transducers which can be moved linearly or swiveled along a trajectory curve. A multiplicity of ultrasound transducers can be aligned with a point of a specimen. If the size and the focal length of the transducers prohibit an annular or similar arrangement, the transducers are divided into smaller groups. They are then arranged so that every transducer passes over each desired focal point on the specimen during movement of the transducers along the trajectory curve. | 11-19-2009 |
20100272229 | PATIENT BED, LOCAL COIL ARRANGEMENT AND METHOD TO DETERMINE THE POSITION OF LOCAL COILS IN A MAGNETIC RESONANCE APPARATUS - At least one non-stationary coil in a magnetic resonance tomography system is attached with a fastener to a displaceable bed. The fastener has a position detector incorporated therein to determine the position or a component of the position of the non-stationary coil. The portion of the position is, for example, the position along the axis of symmetry of the measurement tube. | 10-28-2010 |
20110319177 | DAMPING SYSTEM AND METHOD FOR ELIMINATING TORSION VIBRATIONS - A damping system for damping torsion vibrations of shafts in machines is provided. A torque sensor detects torsion vibrations. At least one magnetostrictive actuator device creates a mechanical counter-vibration and a control device registers a measurement signal of the torque sensor in a time-resolved manner and creates a phase-shifted signal for a counter-vibration and drives the actuator device. Further, a method for eliminating torsion vibration of shafts in machines with such a damping system is provided. The torsion vibration of the torque of the shaft is registered in a time-resolved manner, a phase-shifted signal is created for a counter-vibration, and a mechanical counter-vibration is created using at least one magnetostrictive actuator device. | 12-29-2011 |
20140102220 | MAGNETOELASTIC TORQUE SENSOR - A magnetoelastic torque sensor ( | 04-17-2014 |
20140165737 | METHOD AND MEASURING DEVICE FOR INVESTIGATING A MAGNETIC WORKPIECE - A method for investigating a magnetic workpiece ( | 06-19-2014 |
20140232377 | METHOD AND ASSEMBLY FOR DETERMINING THE ROTATIONAL SPEED OF FERROMAGNETIC COMPONENTS - A method for determining the rotational speed of ferromagnetic disks via the detection of permeability changes in dependence on radially directed forces in the disk includes orienting, for the measurement, at least one contactless-operating magneto-elastic sensor toward a face of the ferromagnetic disk to be measured, for detecting permeability changes in the case of occurring radial forces, and for calculating the radial forces from the permeability changes. The primary use is in the field of contactless determining data of rotating components. | 08-21-2014 |
20140232389 | MEASUREMENT HEAD FOR A MAGNETOELASTIC SENSOR - A measurement head ( | 08-21-2014 |
20140260685 | TORQUE SENSOR ARRANGEMENT AND SHAFT COMPRISING A TORQUE SENSOR ARRANGEMENT - A torque sensor arrangement including a contactless torque sensor, in which the torque sensor is arranged on an electrically operating linear carriage is provided. A distance sensor is also arranged on the linear carriage such that it allows the distance to the object of which the torque is to be determined to be measured. | 09-18-2014 |
20140366637 | MAGNETO-ELASTIC FORCE SENSOR AND METHOD FOR COMPENSATING DISTANCE DEPENDENCY IN A MEASUREMENT SIGNAL OF SUCH A SENSOR - A magneto-elastic force sensor includes a sensor head ( | 12-18-2014 |
Patent application number | Description | Published |
20080319219 | PROCESS FOR IMPROVING ADIPONITRILE QUALITY - A process and apparatus for reacting deleterious impurities contained in adiponitrile (ADN) comprises feeding ADN and an ozone containing gas into a co-current plug flow reactor containing static mixer elements, to oxidize at least a portion of the impurities, thereby producing a reactor discharge, which is processed to produce an ozone-treated ADN product. | 12-25-2008 |
20110196168 | NICKEL METAL COMPOSITIONS AND NICKEL COMPLEXES DERIVED FROM BASIC NICKEL CARBONATES - Nickel-metal-containing solids for use in manufacturing nickel metal complexes are disclosed. The nickel-metal-containing solids are made by reducing basic nickel carbonates. By varying the molar ratios of carbonates and bicarbonates to nickel salts, the methods provide basic nickel carbonates that produce superior nickel metal-containing solids that react more effectively with phosphorous-containing ligands. The phosphorous containing ligands can be both monodentate and bidentate phosphorous-containing ligands. | 08-11-2011 |
20110311428 | NICKEL COMPOSITIONS FOR PREPARING NICKEL METAL AND NICKEL COMPLEXES - Nickel compositions for use in manufacturing nickel metal compositions, and specifically to methods of making basic nickel carbonates used to produce nickel metal compositions are disclosed. By varying the molar ratios of carbonates and bicarbonates to nickel salts, the methods provide basic nickel carbonates that produce superior nickel-containing solids that react more effectively with phosphorous-containing ligands. The phosphorous containing ligands can be both monodentate and bidentate phosphorous-containing ligands. | 12-22-2011 |
20130144079 | CALCINATION AND REDUCTION PROCESS INCLUDING A FLUIDIZING BED REACTOR - These disclosures relate to preparing nickel metal (Ni(0)) suited for use in catalyst systems, such as nickel complexes with phosphorus-containing ligands, useful to catalyze the hydrocyanation of ethylenically unsaturated compounds. The methods described herein can include use of steam during reduction of nickel. | 06-06-2013 |
20130317242 | NICKEL COMPOSITIONS FOR PREPARING NICKEL METAL AND NICKEL COMPLEXES - Nickel(II) compositions for use in manufacturing nickel metal (Ni(0)) compositions, and specifically to methods of making basic nickel carbonates used to produce nickel metal compositions are disclosed. By varying the molar ratios of carbonates and bicarbonates to nickel salts, the methods provide basic nickel carbonates that produce superior nickel metal-containing solids that are well-suited to forming nickel-ligand complexes with phosphorus-containing ligands. The phosphorus-containing ligands can be monodentate or bidentate phosphorus-containing ligands. | 11-28-2013 |
20130345459 | PREPARING A NICKEL PHOSPHORUS LIGAND COMPLEX - The present invention relates to a method of preparing a nickel complex including nickel and at least one phosphorus-containing ligand by reacting at least a portion of a nickel metal with at least one phosphorus-containing ligand. The nickel metal is prepared from a nickel composition including nickel(II). | 12-26-2013 |