Patent application number | Description | Published |
20090001051 | Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same - A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO | 01-01-2009 |
20090011599 | SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process. | 01-08-2009 |
20090155991 | Methods of fabricating a semiconductor device - A method of fabricating a contact plug of a semiconductor device is provided, the method includes forming a gate pattern on a substrate, forming a capping pattern to cover an upper surface and sidewalls of the gate pattern, forming an interlayer insulation layer on the substrate such that the interlayer insulation layer exposes an upper surface of the capping pattern, and removing a portion of the capping pattern and the interlayer insulation layer such that the upper surface of the capping pattern is planarized. | 06-18-2009 |
20100062548 | PHOTO KEY AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE PHOTO KEY - A photo key has a plurality of first regions spaced apart from one another on a semiconductor substrate, and a second region surrounding the first regions, and one of the first regions and the second region constitutes a plurality of photo key regions spaced apart from one another. Each of the photo key regions includes a plurality of first conductive patterns spaced apart from one another; and a plurality of second conductive patterns interposed between the first conductive patterns. | 03-11-2010 |
20100127398 | Wiring structure of a semiconductor device - In a wiring structure of a semiconductor device and a method of manufacturing the same, a wiring structure includes a contact pad, a contact plug, a spacer and an insulation interlayer pattern. The contact pad is electrically connected to a contact region of a substrate. The contact plug is provided on the contact pad and is electrically connected to the contact pad. The spacer faces an upper side surface of the contact pad and sidewalls of the contact plug. The insulation interlayer pattern has an opening, the contact plug and the spacer being provided in the opening. The spacer of the wiring structure may prevent the contact pad from being damaged by a cleaning solution while forming a contact plug to be connected to a capacitor. | 05-27-2010 |
20110294285 | PHOTO KEY AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE PHOTO KEY - A photo key has a plurality of first regions spaced apart from one another on a semiconductor substrate, and a second region surrounding the first regions, and one of the first regions and the second region constitutes a plurality of photo key regions spaced apart from one another. Each of the photo key regions includes a plurality of first conductive patterns spaced apart from one another; and a plurality of second conductive patterns interposed between the first conductive patterns. | 12-01-2011 |
20120007018 | SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process. | 01-12-2012 |
20130112914 | Slurry Composition For Polishing And Method Of Manufacturing Phase Change Memory Device Using The Same - A slurry composition includes an abrasive agent, an oxidizing agent, and a first adsorption inhibitor including a polyethylene oxide copolymer. A method of manufacturing a phase change memory device may include providing a substrate including an interlayer insulating film having a trench and a phase change material layer on the interlayer insulating film filling the trench, and performing chemical mechanical polishing on the phase change material layer using the slurry composition to form a phase change material pattern layer. | 05-09-2013 |
20130316628 | FLEXIBLE MEMBRANES FOR A POLISHING HEAD - A flexible membrane for a polishing head includes a main part having a first surface configured to make contact with a surface of a substrate and a second surface opposite to the first surface, a plurality of extensions extending substantially perpendicularly from the second surface of the main part so as to define a plurality of independent spaces, respectively, and an inner ring coupled with an inner side of an outermost extension of the extensions to support an edge portion of the main part. A bottom surface of the inner ring is substantially flat. | 11-28-2013 |