Patent application number | Description | Published |
20100087028 | ADVANCED PLATFORM FOR PROCESSING CRYSTALLINE SILICON SOLAR CELLS - The present invention generally provides a batch substrate processing system, or cluster tool, for in-situ processing of a film stack used to form regions of a solar cell device. In one configuration, the film stack formed on each of the substrates in the batch contains one or more silicon-containing layers and one or more metal layers that are deposited and further processed within the various chambers contained in the substrate processing system. The processing chambers may be, for example, physical vapor deposition (PVD) or sputtering chambers, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, hot wire chemical vapor deposition (HWCVD) chambers, plasma nitridation (DPN) chambers, ion implant/doping chambers, atomic layer deposition (ALD) chambers, plasma etching chambers, annealing chambers, rapid thermal oxidation (RTO) chambers, rapid thermal annealing (RTA) chambers, substrate reorientation chambers, laser annealing chambers, and/or plasma cleaning stations. In one embodiment, a batch of solar cell substrates is simultaneously transferred in a vacuum or inert environment to prevent contamination from affecting the solar cell formation process. | 04-08-2010 |
20110116900 | SUBSTRATE ALIGNMENT APPARATUS - Embodiments of the present invention generally relate to an apparatus and method for accurately aligning a plurality of substrates arranged in a planar array for batch processing. In one embodiment, the substrate alignment apparatus includes an array of oversized, recessed pockets for receiving the plurality of substrates. The substrate alignment apparatus may pick up the plurality of substrates from a location in which each substrate is not accurately positioned. Each pocket is configured at an angle from horizontal such that each substrate slides to a predefined corner of the pocket resulting in accurate alignment of each substrate. A vibration, tilting, directional brushes, or gas cushion may be provided to the substrate alignment apparatus to aid in low friction alignment of each substrate within its respective pocket. In one embodiment, the substrate alignment apparatus is an end effector for use on a transfer robot for use in a cluster-type processing system. In another embodiment, the substrate alignment apparatus is an alignment table for use in an in-line processing system. | 05-19-2011 |
20110162706 | PASSIVATED POLYSILICON EMITTER SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a polysilicon emitter solar cell with a passivating layer over its polysilicon emitter layer is disclosed. The method includes steps of preparing a substrate, forming a first polysilicon layer over the substrate, and forming a first passivating layer over the first polysilicon layer. Another embodiment of the present invention discloses a solar cell apparatus. The solar cell apparatus includes a substrate, a first polysilicon layer over the substrate, and a first passivating layer on first polysilicon layer. | 07-07-2011 |
20110245957 | ADVANCED PLATFORM FOR PROCESSING CRYSTALLINE SILICON SOLAR CELLS - The present invention generally provides a batch substrate processing system for in-situ processing of a film stack used to form regions of a solar cell device. The batch processing system is configured to process an array of substrates positioned on a substrate carrier. The batch processing system includes a substrate transport interface that provides loading an unloading of the array of substrates in a production line environment. The substrate transport interface may include one or more of a substrate carrier cleaning module, a substrate carrier cooling module, and a substrate carrier buffer module. | 10-06-2011 |
20110272625 | Surface cleaning and texturing process for crystalline solar cells - Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 μm to about 10 μm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 μm to about 8 μm on the substrate. | 11-10-2011 |