Patent application number | Description | Published |
20100028802 | METHOD FOR RESIST UNDER LAYER FILM FORMATION, COMPOSITION FOR RESIST UNDER LAYER FILM FOR USE IN THE METHOD, AND METHOD FOR PATTERN FORMATION - This invention provides a method for resist under layer film formation, which can form a resist under layer film which can function as an anti-reflection film, is excellent in pattern transfer properties and etching resistance, and does not cause bending of a pattern even in the transfer of a fined pattern, and a composition for the resist under layer film for use in the method, and a method for pattern formation. The method for resist under layer film formation comprises the steps of coating a composition for resist under layer film formation (for example, a composition comprising a compound having a phenolic hydroxyl group, a solvent, and an accelerator) onto a substrate to be processed, and treating the formed coating film under an oxidizing atmosphere having an oxygen concentration of not less than 1% by volume and a temperature of 300° C. or higher to form a resist under layer film. | 02-04-2010 |
20100178620 | INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION - A method for forming an inverted pattern includes forming a photoresist pattern on a substrate, filling a space formed by the photoresist pattern with a resin composition including a polysiloxane and a solvent, and removing the photoresist pattern to form an inverted pattern. The resin composition includes (A) a polysiloxane obtained by hydrolysis and condensation of two types of hydrolysable silane compounds having a specific structure, and (B) an organic solvent containing an alcohol or ether having a specific structure. | 07-15-2010 |
20130004900 | METHOD FOR FORMING RESIST UNDER LAYER FILM, PATTERN FORMING METHOD AND COMPOSITION FOR RESIST UNDER LAYER FILM - A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film. | 01-03-2013 |
20130233826 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD - A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass. | 09-12-2013 |
Patent application number | Description | Published |
20080220580 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor integrated circuit device having on the same substrate both a high breakdown voltage MISFET and a low breakdown voltage MISFET is provided. An element isolation trench is formed in advance so that the width thereof is larger than the sum of the thickness of a polycrystalline silicon film serving as a gate electrode of a low breakdown voltage, the thickness of a gate insulating film and an alignment allowance in processing of a gate electrode in a direction orthogonal to the extending direction of the gate electrode and is larger than the thickness of the polycrystalline silicon film in a planar region not overlapping the gate electrode. It is possible to decrease the number of manufacturing steps for the semiconductor integrated circuit device. | 09-11-2008 |
20080303968 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET. | 12-11-2008 |
20090243027 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING THE SAME - To achieve a further reduction in the size of a finished product by reducing the number of externally embedded parts, the embedding of a Schottky barrier diode which is relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. In such a case, it is general practice to densely arrange a large number of contact electrodes in a matrix over a Schottky junction region. It has been widely performed to perform a sputter etching process with respect to the surface of a silicide layer at the bottom of each contact hole before a barrier metal layer is deposited. However, in a structure in which electrodes are thus arranged over a Schottky junction region, a reverse leakage current in a Schottky barrier diode is varied by variations in the amount of sputter etching. The present invention is a semiconductor integrated circuit device having a Schottky barrier diode in which contact electrodes are arranged over a guard ring in contact with a peripheral isolation region. | 10-01-2009 |
20120037965 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET. | 02-16-2012 |
20120326262 | Semiconductor Integrated Circuit Device and A Method of Manufacturing the Same - To reduce size of a finished product by reducing the number of externally embedded parts, embedding of a Schottky barrier diode relatively large in the amount of current in a semiconductor integrated circuit device has been pursued. It is general practice to densely arrange a number of contact electrodes in a matrix over a Schottky junction region. A sputter etching process to the surface of a silicide layer at the bottom of each contact hole is performed before a barrier metal layer is deposited. However, in a structure in which electrodes are thus arranged over a Schottky junction region, a reverse leakage current in a Schottky barrier diode is varied by variations in the amount of sputter etching. The present invention is a semiconductor integrated circuit device having a Schottky barrier diode in which contact electrodes are arranged over a guard ring in contact with a peripheral isolation region. | 12-27-2012 |
20140051219 | Semiconductor Device and Method of Manufacturing the Same - In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on an interlayer insulation film of the first layer over the high voltage resistant MISFET. At this moment, when a distance from an interface between a semiconductor substrate and a gate insulation film to an upper portion of the gate electrode is defined as “a”, and a distance from the upper portion of the gate electrode to an upper portion of the interlayer insulation film on which the wires are formed is defined as “b”, a relation of a>b is established. In such a high voltage resistant MISFET structured in this manner, the wires are arranged so as not to be overlapped planarly with the gate electrode of the high voltage resistant MISFET. | 02-20-2014 |
Patent application number | Description | Published |
20140182349 | PRESS FORMING METHOD AND VEHICLE COMPONENT - Disclosed is a press forming method press forming a workpiece between a die and a punch, while pushing the punch into the die by means of a relative motion of the die and the punch, the method includes: producing an intermediate molding ( | 07-03-2014 |
20150066441 | ANALYZING APPARATUS, ANALYZING METHOD, AND COMPUTER PROGRAM - An analyzing apparatus generates first displacement distribution data indicating a displacement distribution of a member caused by springback based on finite element model data, material physical property data, and stress distribution data; generates second displacement distribution data indicating an amount of displacement of the member in each of a plurality of, for example, all, natural vibration deformation modes based on the finite element model data and the material physical property data; obtains a degree of coincidence between the first displacement distribution data and each of the second displacement distribution data, and selects one or more natural vibration deformation modes based on the degree of coincidence, to determine a modified shape in which natural vibrations are increased, thereby bringing the member closer to a target shape. | 03-05-2015 |
Patent application number | Description | Published |
20090279451 | TRANSMITTING/RECEIVING METHOD AND PROGRAM AND RECORDING MEDIUM - The present invention provides a transmitting/receiving method capable of selecting a combination of communication media of the own and its counterpart reflecting the preference of the user or an application for each of flows on communication terminals and capable of doing execution without being known by counterpart the preference information. It presents means for selecting a combination of CoAs (the CoA of the communication counterpart and that of the own) of the Mobile IP referring to the preference information of the application when communication terminals transmit/receive one or more flows (data flows) through one or more paths (communication channels). In consideration of combinations of flows and paths, the score is calculated for the combinations, and transmitted to the counterpart terminal of the communication, the approval is obtained to select the optimum path. As a result, the CoA suitable to the preferences of both parties can be selected for each flow. | 11-12-2009 |
20090290529 | COMMUNICATION SYSTEM USING NETWORK BASE IP MOBILITY PROTOCOL, CONTROL APPARATUS, ROUTER AND COMMUNICATION METHOD THEREOF - There are provided a communication system, a control apparatus, a router, and communication method thereof, there are capable of eliminating loss in packets during a handover and effectively releasing a resource of a router in a network base IP mobility protocol in which a mobile mode is movable without mounting a special protocol. When an MN | 11-26-2009 |
20090310509 | COMMUNICATION SYSTEM AND COMMUNICATION TERMINAL - The present invention provides a communication system and a communication method for linking the switching of a transmission path with the switching of an application according to the change of a communication condition caused by the movement of a user in a mobile environment. A change of the communication condition caused by the movement of the user is always monitored and the transmission path is switched according to the state change of the transmission path. Here, the state of the transmission path between the terminal and the communication counter part terminal is obtained and compared to a priority reference for each of the applications, thereby selecting a transmission path appropriate for the application becomes possible and a service in corresponding to the communication condition can be provided by changing a content to that appropriate for the transmission path, simultaneously. | 12-17-2009 |
20110149839 | COMMUNICATION SYSTEM USING NETWORK BASE IP MOBILITY PROTOCOL, CONTROL APPARATUS, ROUTER AND COMMUNICATION METHOD THEREOF - There are provided a communication system, a control apparatus, a router, and communication method thereof, there are capable of eliminating loss in packets during a handover and effectively releasing a resource of a router in a network base IP mobility protocol in which a mobile mode is movable without mounting a special protocol. When an MN | 06-23-2011 |