Patent application number | Description | Published |
20120126646 | INTERMEDIATE CONNECTION MEMBER, STATOR AND MOTOR - An intermediate connection member which electrically connects an output terminal of a bus bar installed inside a motor case with an external connection terminal located in a distance from the output terminal. The intermediate connection member preferably includes both of a terminal member which is connected to the output terminal and a connecting line which is connected to the external connection terminal. The connecting line is defined by binding a plurality of wire rods together. | 05-24-2012 |
20120286593 | STATOR AND MOTOR - A stator is compatible with a variety of wiring configurations and possesses excellent versatility, while also preventing an increase in the size of a busbar unit. The stator includes a plurality of stator segments joined together to assume a cylindrical shape. Each stator segment includes a core segment including a core back portion and a tooth portion; a coil including a pair of coil wire terminals; an insulating layer arranged between the coil and the tooth portion; and a resin layer arranged to have the entire coil except for the coil wire terminals embedded therein. The resin layers of the stator segments include a supporting structure defined therein to allow a wiring member to be connected with any of the coil wire terminals to be attached to and removed from the stator. | 11-15-2012 |
20120293024 | STATOR SEGMENT AND MOTOR - A stator segment arranged to define a portion of an annular stator includes a core segment including a core back portion arranged to extend in a circumferential direction of the stator, and a tooth portion arranged to extend from the core back portion in a radial direction of the stator; a coil wound around the tooth portion and including a pair of coil wire terminals; an insulating layer arranged between the coil and the tooth portion; and a resin layer arranged to seal the entire coil except for the pair of coil wire terminals. Circumferential end walls of the resin layer are arranged circumferentially inward of circumferential end walls of the core back portion. | 11-22-2012 |
20120319512 | BUSBAR UNIT AND MOTOR - A busbar unit is arranged on an axial end portion of a stator and electrically connected with a plurality of coil wire terminals arranged to project in an axial direction above the axial end portion of the stator. The busbar unit includes a plurality of busbars each including a body portion defined by an electrically conductive wire having an annular or “C” shape, the body portion being arranged around an axis of the stator; a holder member arranged on the axial end portion of the stator to hold the busbars; and a plurality of terminal members each including a busbar connection portion connected with the body portion of one of the busbars, and a coil connection portion connected with one of the coil wire terminals. | 12-20-2012 |
20130181569 | BUS BAR, MOTOR, AND PROCESS FOR PRODUCING THESE - A bus bar which electrically connects end portions of a plurality of conductive lines and a method for manufacturing the bus bar are such that an intermediate region of a single wire rod is folded to define a plurality of terminal forming portions extending to a lateral direction of the wire rod. The whole wire rod including the terminal forming portion is rolled. The rolled wire rod is bent into a certain shape. | 07-18-2013 |
Patent application number | Description | Published |
20080210983 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device including: a plurality of photodiode parts ( | 09-04-2008 |
20090302408 | SOLID-STATE IMAGE SENSOR AND MANUFACTURING METHOD THEREOF - A solid-state image sensor includes: a photoelectric conversion region formed in an upper part of a semiconductor substrate, for generating charges by photoelectric conversion; a transfer region formed in the upper part of the semiconductor substrate and located on a side of the photoelectric conversion region, for transferring the charges; and a transfer electrode formed over the semiconductor substrate and located above the transfer region. The solid-state image sensor further includes: a first insulating film which covers the photoelectric conversion region and the transfer electrode; an antireflection film which covers the first insulating film; and a first light-shielding film which is formed on the antireflection film and covers at least the transfer electrode. The antireflection film and the first light-shielding film have an opening above the transfer electrode. | 12-10-2009 |
20110031575 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor includes first and second pixels formed on a semiconductor substrate. The first pixel includes: a first photoelectric conversion region located in an upper portion of the semiconductor substrate; a first transfer electrode; a light-shield film covering the first transfer electrode and having a first opening on the first photoelectric conversion region; and a first anti-reflection film located on the first photoelectric conversion region and, when viewed in plan, within the first opening so as not to overlap the first light-shield film. The second pixel includes: a second photoelectric conversion region located in an upper portion of the semiconductor substrate; a second transfer electrode; the light-shield film covering the second transfer electrode and having a second opening on the second photoelectric conversion region; and a second anti-reflection film located on the second photoelectric conversion region and continuously extending to a portion on the second transfer electrode. | 02-10-2011 |
20130242149 | SOLID-STATE IMAGING ELEMENT AND METHOD FOR MANUFACTURING SAME - A solid-state imaging device includes: a semiconductor substrate including a matrix of photoelectric converters disposed therein; a transparent insulating layer disposed on the semiconductor substrate and including wiring lines embedded therein; a color filter layer disposed on the transparent insulating layer and including a color filter for each of a plurality of colors of the respective photoelectric converters; and a plurality of microlenses disposed on the color filter layer, one for each color filter. In a plan view, the color filter of at least one color is smaller in area size than the corresponding microlens. In the color filter layer, the color filter of the at least one color is surrounded by a low-refractive-index material having a lower refractive index than a refractive index of the color filter. | 09-19-2013 |
Patent application number | Description | Published |
20090141765 | NITRIDE SEMICONDUCTOR LASER DEVICE - A nitride semiconductor laser device has a group III nitride semiconductor multilayer structure. The group III nitride semiconductor multilayer structure includes an n-type semiconductor layer, a p-type semiconductor layer and a light emitting layer held between the n-type semiconductor layer and the p-type semiconductor layer, and the p-type semiconductor layer is formed by successively stacking a p-side guide layer, a p-type electron blocking layer in contact with the p-side guide layer and a p-type cladding layer in contact with the p-type electron blocking layer from the side closer to the light emitting layer. The p-side guide layer is formed by stacking a layer made of a group III nitride semiconductor containing Al and a layer made of a group III nitride semiconductor containing no Al. The p-type cladding layer is made of a group III nitride semiconductor containing Al, and the p-type electron blocking layer is made of a group III nitride semiconductor having a larger Al composition than the p-type cladding layer. | 06-04-2009 |
20100008391 | Nitride based semiconductor device and fabrication method for the same - A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. | 01-14-2010 |
20120140785 | NITRIDE BASED SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - A nitride based semiconductor device includes: an n-type cladding layer; an n-type GaN based guide layer placed on the n-type cladding layer; an active layer placed on the n-type GaN based guide layer; a p-type GaN based guide layer placed on the active layer; an electron block layer placed on the p-type GaN based guide layer; a stress relaxation layer placed on the electron block layer; and a p-type cladding layer placed on the stress relaxation layer, and the nitride based semiconductor device alleviates the stress occurred under the influence of the electron block layer, does not affect light distribution by the electron block layer, reduces threshold current, can suppress the degradation of reliability, can suppress degradation of the emitting end surface of the laser beam, can improve the far field pattern, and is long lasting, and fabrication method of the device is also provided. | 06-07-2012 |
Patent application number | Description | Published |
20090279241 | COVER FOR A PORTABLE ELECTRONIC DEVICE - A cover for an electronic device for a portable electronic device is disclosed. The cover may comprise a thin, flexible transparent layer coupled with a supporting structure over a display screen and a digitizer mechanism. The digitizer mechanism may include a flexible conductive paste and a digitizing element. Users input data by applying mechanical pressure on the cover which deflects it and causes the conductive paste to contact and activate the digitizing element disposed beneath. A decorative border may be molded into the cover to conceal the electrical elements of the portable electronic device. The decorative border may be disposed directly beneath the flexible cover. The cover may be dust-free, waterproof, and have an outer surface that is free of any steps, openings, or indentations. Indentations may be molded into the cover to indicate button functions. | 11-12-2009 |
20100109755 | SEMICONDUCTOR DEVICE - A semiconductor device capable of improving the breakdown voltage in the overall device is provided. The semiconductor device includes: a semiconductor substrate; a p-MOS formed on a surface layer portion of the semiconductor substrate; an n-MOS formed on the surface layer portion of the semiconductor substrate and serially connected with the p-MOS between a power source and a ground; and a substrate potential control circuit for controlling the potential of the back surface of the semiconductor substrate to an intermediate potential higher than the ground potential and lower than the potential of the power source. | 05-06-2010 |
20150041302 | TOUCH SENSOR AND MANUFACTURING METHOD FOR THE SAME, AS WELL AS TRANSFER RIBBON FOR TOUCH SENSOR MANUFACTURING - A touch sensor including a plurality of first electrode films and a plurality of second electrode films which are formed on a surface of a substrate and are arranged in different directions from each other; and a manufacturing method for the same. The manufacturing method includes: a first transfer step, which uses a transfer ribbon made by at least an insulating layer and an electrode-imparting layer which are entirely sequentially stacked as a transfer layer upon an elongated release film, attaches to a substrate only a portion of the transfer layer to which heat and pressure have been applied, and by stripping the release film, transfers the transfer layer in at least the shape of a first electrode film; and a second transfer step including attaching only the portion of the transfer layer to which the heat and the pressure had been applied and stripping the release film. | 02-12-2015 |
Patent application number | Description | Published |
20090047263 | Nuclear reprogramming factor and induced pluripotent stem cells - The present invention relates to a nuclear reprogramming factor having an action of reprogramming a differentiated somatic cell to derive an induced pluripotent stem (iPS) cell. The present invention also relates to the aforementioned iPS cells, methods of generating and maintaining iPS cells, and methods of using iPS cells, including screening and testing methods as well as methods of stem cell therapy. The present invention also relates to somatic cells derived by inducing differentiation of the aforementioned iPS cells. | 02-19-2009 |
20120114219 | IMAGE PROCESSING APPARATUS, INCUBATION OBSERVING APPARATUS, AND IMAGE PROCESSING METHOD - An image processing apparatus includes an outline extracting processing unit inputting a phase contrast image of a cell colony acquired by an observing unit, and extracting an outline of the cell colony, an extracting unit extracting a feature quantity of an outline part of the cell colony based on brightness information at an outside and brightness information at an inside of the outline on the phase contrast image, and an automatic discriminating unit automatically discriminating whether or not the cell colony is an iPS cell colony based on a discriminant criterion determined in advance and the feature quantity extracted by the extracting unit. | 05-10-2012 |
20120196360 | METHOD OF EFFICIENTLY ESTABLISHING INDUCED PLURIPOTENT STEM CELLS - Provided is a method of producing an iPS cell, comprising bringing (a) Oct3/4 or a nucleic acid that encodes the same, (b) Klf4 or a nucleic acid that encodes the same, and (c) Sox2 or a nucleic acid that encodes the same, as well as (d1) L-Myc or a nucleic acid that encodes the same and/or (d2) a functional inhibitor of p53, into contact with a somatic cell. It is preferable that (a) a nucleic acid that encodes Oct3/4, (b) a nucleic acid that encodes Klf4, (c) a nucleic acid that encodes Sox2, (d1) a nucleic acid that encodes L-Myc and (e) a nucleic acid that encodes Lin28 or Lin28 | 08-02-2012 |
20120276636 | METHOD FOR IMPROVING INDUCED PLURIPOTENT STEM CELL GENERATION EFFICIENCY - The present invention provides a method for improving iPS cell generation efficiency, which comprises a step of introducing a Myc variant having the following features: (1) having an activity to improve iPS cell generation efficiency which is comparative to, or greater than that of c-Myc; and (2) having a transformation activity which is lower than that of c-Myc; or a nucleic acid encoding the variant, in a nuclear reprogramming step. Also, the present invention provides a method for preparing iPS cells, which comprises a step of introducing the above Myc variant or a nucleic acid encoding the variant and a combination of nuclear reprogramming factors into somatic cells. Moreover, the present invention provides iPS cells comprising the nucleic acid encoding the Myc variant which can be obtained by the above method, and a method for preparing somatic cells which comprises inducing differentiation of the iPS cells. | 11-01-2012 |
20140127806 | MODIFIED LAMININ AND USE THEREOF - Provided are a modified laminin having a cell-growth regulatory molecule bound to at least one site selected from the α chain N-terminus, the α chain C-terminus, the β chain N-terminus and the δ chain N-terminus of laminin or a heterotrimeric laminin fragment, a method for culturing cells in the presence of the modified laminin, a method for establishing iPS cells in the presence of the modified laminin, and a culture substrate coated with the modified laminin. Human stem cells cultured in a xeno-free environment with the use of the modified laminin of the present invention can be provided as highly safe human stem cells applicable to regenerative medicine. | 05-08-2014 |
20150031062 | METHOD FOR SORTING OF PLURIPOTENT CELLS - A method for sorting pluripotent cells using a compound which is eliminated from the pluripotent cells through the MDR1 transporter. | 01-29-2015 |
Patent application number | Description | Published |
20090121356 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device according to the present invention includes a first interlayer dielectric film, a plurality of copper damascene wires embedded in the first interlayer dielectric film at an interval from each other, and a diffusion preventing film stacked on the first interlayer dielectric film for preventing diffusion of copper contained in the copper damascene wires, while an air gap closed with the diffusion preventing film is formed between the copper damascene wires adjacent to each other by partially removing the first interlayer dielectric film from the space between these copper damascene wires. | 05-14-2009 |
20100032837 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device according to the present invention includes: a semiconductor substrate; a first copper interconnection provided on the semiconductor substrate; an insulating layer provided over the first copper interconnection and having a hole extending therethrough to the first copper interconnection; a barrier layer composed of a tantalum-containing material and covering at least a sidewall of the hole and a part of the first copper interconnection exposed in the hole; and a second copper interconnection provided in intimate contact with the barrier layer and electrically connected to the first copper interconnection via the barrier layer; wherein the barrier layer has a nitrogen concentration profile such that the concentration of nitrogen contained in the material varies to be lower in a boundary portion of the barrier layer adjacent to the first copper interconnection and in a boundary portion of the barrier layer adjacent to the second copper interconnection and higher in an intermediate portion of the barrier layer defined between the boundary portions. | 02-11-2010 |
20100078780 | Semiconductor device - A semiconductor device according to the present invention includes: a wiring; an interlayer insulating film formed over the wiring and having an opening reaching the wiring from a top surface thereof; an intra-opening metal film formed on the wiring inside the opening and made of a metal material that contains aluminum; a top surface metal film formed over the interlayer insulating film and made of the metal material; and a conduction securing film formed on a side surface of the opening to secure conduction between the intra-opening metal film and top surface metal film. | 04-01-2010 |
20110175193 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device according to the present invention includes a semiconductor substrate, and an interlayer dielectric film, formed on the semiconductor substrate, having a multilayer structure of a compressive stress film and a tensile stress film. | 07-21-2011 |
Patent application number | Description | Published |
20090078995 | Semiconductor device and method of manufacturing semiconductor device - A semiconductor device includes a first conductivity type layer of a first conductivity type, a body layer of a second conductivity type formed on the first conductivity type layer, a gate trench passing through the body layer so that the deepest portion thereof reaches the first conductivity type layer, a source region of the first conductivity type formed around the gate trench on the surface layer portion of the body layer, a gate insulating film formed on the bottom surface and the side surface of the gate trench, and a gate electrode embedded in the gate trench through the gate insulating film, and the bottom surface of the gate electrode and the upper surface of the first conductivity type layer are flush with each other. | 03-26-2009 |
20100163987 | Semiconductor device - Semiconductor device including semiconductor layer, first impurity region on surface layer portion of semiconductor layer, body region at interval from first impurity region, second impurity region on surface layer portion of body region, field insulating film at interval from second impurity region, gate insulating film on surface of the semiconductor layer between second impurity region and field insulating film, gate electrode on gate insulating film, first floating plate as ring on field insulating film, and second floating plate as ring on same layer above first floating plate. First and second floating plates formed by at least three plates so that peripheral lengths at centers in width direction thereof are entirely different from one another, alternately arranged in plan view so that one having relatively smaller peripheral length is stored in inner region of one having relatively larger peripheral length, and formed to satisfy relational expression: L/d=constant. | 07-01-2010 |