Patent application number | Description | Published |
20100119953 | ELECTROLYTE FOR NON-AQUEOUS CELL AND NON-AQUEOUS SECONDARY CELL - In a rechargeable non-aqueous electrolyte secondary battery using positive electrodes, negative electrodes and a non-aqueous electrolytic solution, additives to the electrolytic solution are used in combination, preferably in combination of at least two compounds selected from o-terphenyl, triphenylene, cyclohexylbenzene and biphenyl, and thus there are provided batteries excellent in safety and storage characteristics. | 05-13-2010 |
20100310942 | ELECTROLYTE FOR NON-AQUEOUS CELL AND NON-AQUEOUS SECONDARY CELL - In a rechargeable non-aqueous electrolyte secondary battery using positive electrodes, negative electrodes and a non-aqueous electrolytic solution, additives to the electrolytic solution are used in combination, preferably in combination of at least two compounds selected from o-terphenyl, triphenylene, cyclohexylbenzene and biphenyl, and thus there are provided batteries excellent in safety and storage characteristics. | 12-09-2010 |
20130056349 | SPUTTERING TARGET AND METHOD OF MANUFACTURING MAGNETIC MEMORY USING THE SAME - Provided are a sputtering target including a target main body | 03-07-2013 |
20130200777 | BLUE-LIGHT-EMITTING PHOSPHOR AND LIGHT-EMITTING DEVICE EQUIPPED WITH THE BLUE-LIGHT-EMITTING PHOSPHOR - A blue light-emitting phosphor having an elemental formula of Sr | 08-08-2013 |
20130244033 | SILICATE-BASED BLUE LIGHT-EMITTING PHOSPHOR AND METHOD FOR PRODUCING SAME - A blue light-emitting silicate phosphor favorably employable as a blue light-emitting source of a light-emitting apparatus which gives emission of a visible light upon irradiation of ultraviolet rays having a wave-length of 254 nm, such as ultraviolet rays emitted by a fluorescent lamp is produced by a method comprising calcining a powdery mixture comprising a magnesium oxide powder, an MeO source powder, a EuO source powder and a SiO | 09-19-2013 |
20140144775 | MgO TARGET FOR SPUTTERING - Disclosed is an MgO target for sputtering, which can accelerate a film formation rate even when MgO is used as a target for sputtering in the formation of an MgO film. The MgO target for sputtering, which includes MgO and an electroconductive material as main components, and in which the electroconductive material is capable of imparting orientation to a MgO film when the MgO film containing the electroconductive material is formed by a DC sputtering. | 05-29-2014 |
20140166927 | MOISTURE ABSORBENT FOR ORGANIC ELECTROLUMINESCENCE ELEMENT AND PRODUCTION METHOD FOR SAME - A moisture absorbent for an organic EL element having hydrophobicity and no reduction in moisture absorption speed, and a method for producing the moisture absorbent are provided. The moisture absorbent for an organic EL element includes, as a main component, calcium oxide particles each having an alkoxide layer on the surface thereof. Furthermore, the method for producing a moisture absorbent for an organic EL element includes dry-pulverizing calcium oxide in the presence of an alcohol, and thereafter dry-treating the pulverized calcium oxide. | 06-19-2014 |
Patent application number | Description | Published |
20090008195 | Vibration isolator - There is provided a vibration isolator in which a restriction passage for causing a main fluid chamber and a sub-fluid chamber to communicate with each other is changed over to one of a first restriction passage and a second restriction passage according to a change in the frequency of vibrations in a short period of time, and the size of the isolator is made small efficiently. A plunger member | 01-08-2009 |
20100270716 | ANTI-VIBRATION APPARATUS - A liquid (L) sealed in a first mounting member ( | 10-28-2010 |
20110155887 | ANTI-VIBRATION DEVICE - An anti-vibration device includes a tubular first attachment member connected to either a vibration generating section or a vibration receiving section; a second attachment member connected to the other of the vibration generating section and the vibration receiving section; a first rubber elastic body elastically interconnecting the first and second attachment members; a liquid containing a first liquid and a second liquid which are insoluble in each other, the second liquid having a smaller surface tension than the first liquid, and the second liquid in the liquid weighing less than the first liquid in the liquid; a partition member partitioning the inside of the first attachment member into a main liquid chamber and a sub liquid chamber, the main liquid chamber having a first partition wall and having a portion of the liquid enclosed therein, an inner volume of the main liquid chamber changing due to deformation of the first rubber elastic body, a part of the first partition wall being formed of the first rubber elastic body; and the sub liquid chamber having a second partition wall and having a portion of the liquid enclosed therein, at least a part of the second partition wall being adapted to be deformable, the liquid being enclosed in the main liquid chamber and the sub liquid chamber; and an orifice passage provided between the outer peripheral surface of the partition member and the inner peripheral surface of the first attachment member so as to communicate the main liquid chamber and the sub liquid chamber. | 06-30-2011 |
20110192030 | METHOD OF MANUFACTURING A VIBRATION ISOLATOR - The present invention relates to a method of manufacturing a vibration isolator ( | 08-11-2011 |
20120126167 | WORKING LIQUID AND DEVICE UTILIZING SAME - Provided is a working fluid which is sealed in a liquid-sealed space in a device to be used, including: a first liquid and a second liquid which are insoluble with each other, wherein a weight of the second liquid contained is smaller than that of the first liquid, and the second liquid has a higher vapor pressure than that of a main component of the first liquid at the same temperature. | 05-24-2012 |
20120313306 | VIBRATION-DAMPING DEVICE - A vibration-damping device includes: an elastic body connecting a tubular first mounting member and a second mounting member; and a partition member ( | 12-13-2012 |
20130328254 | TORQUE ROD AND ENGINE MOUNTING SYSTEM FOR USING SAME - A torque rod ( | 12-12-2013 |
20140124645 | ANTI-VIBRATION DEVICE FOR VEHICLE - An anti-vibration device for a vehicle including a rod ( | 05-08-2014 |
20150101901 | ANTI-VIBRATION DEVICE FOR VEHICLE - A vehicular antivibration device includes a torque rod and an actuator. The torque rod is connected at a first end to a vehicle body and connected at a second end to a vibration source. The actuator is disposed between the first end and the second end of the torque rod, includes an inertia mass supported on the torque rod, and causes the inertia mass to reciprocate in the axial direction of the torque rod. The actuator includes a coil, a magnetic core, a permanent magnet and a heat-conducting member. The magnetic core forms magnetic paths for the coil, and the coil is wound around the outer periphery of the magnetic core. The permanent magnet faces the inertia mass and is disposed on the magnetic core. The heat-conducting member is disposed so as to contact the coil and the torque rod. | 04-16-2015 |
20160053845 | VIBRATION ISOLATOR - A vibration isolator ( | 02-25-2016 |
20160053846 | VIBRATION ISOLATOR - A vibration isolator includes a partition member ( | 02-25-2016 |
Patent application number | Description | Published |
20080254367 | LITHIUM SECONDARY BATTERY AND NON-AQUEOUS ELECTROLYTIC SOLUTION - The sudden generation of heat being frequently caused in the case of the overcharge of a lithium secondary cell which have a positive electrode comprising a composite metal oxide of lithium and cobalt or a composite metal oxide of lithium and nickel, a negative electrode comprising metallic lithium, a lithium alloy or a material capable of occluding and releasing lithium, and a nonaqueous electrolyte solution comprising a nonaqueous solvent and an electrolyte dissolved therein can be efficiently prevented by the addition, to the nonaqueous electrolyte solution, of an organic compound which, when the lithium secondary cell is overcharged, decomposes into a decomposition product capable of dissolving out the cobalt or nickel contained in the positive electrode and depositing it ion the negative electrode (for example, a tert-alkylbenzene derivative). | 10-16-2008 |
20100079110 | NON-AQUEOUS ELECTROLYTIC SOLUTION AND LITHIUM SECONDARY BATTERY - A non-aqueous electrolytic solution favorably employable for a lithium secondary battery employs a non-aqueous electrolytic solution which comprises a non-aqueous solvent and an electrolyte which further contains 0.001 to 0.8 weight % of a biphenyl derivative having the formula: | 04-01-2010 |
20110250504 | LITHIUM SECONDARY BATTERY AND NON-AQUEOUS ELECTROLYTIC SOLUTION - The sudden generation of heat being frequently caused in the case of the overcharge of a lithium secondary cell which have a positive electrode comprising a composite metal oxide of lithium and cobalt or a composite metal oxide of lithium and nickel, a negative electrode comprising metallic lithium, a lithium alloy or a material capable of occluding and releasing lithium, and a nonaqueous electrolyte solution comprising a nonaqueous solvent and an electrolyte dissolved therein can be efficiently prevented by the addition, to the nonaqueous electrolyte solution, of an organic compound which, when the lithium secondary cell is overcharged, decomposes into a decomposition product capable of dissolving out the cobalt or nickel contained in the positive electrode and depositing it ion the negative electrode (for example, a tert-alkylbenzene derivative). | 10-13-2011 |
Patent application number | Description | Published |
20080299758 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A high-density N-type diffusion layer | 12-04-2008 |
20080299763 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - After a first insulating film is formed on a substrate, a wiring groove is formed in the first insulating film, and then a wire is formed inside the wiring groove. Subsequently, a protection film is formed on the first insulating film and on the wire, and then a hard mask film is formed on the protection film. After that, the hard mask film is patterned. Subsequently, the protection film and the first insulating film are partially removed using the patterned hard mask film to form an air gap groove, and then a second insulating film is formed to close an upper portion of the air gap groove for forming an air gap. | 12-04-2008 |
20090263951 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of forming an insulating film on a semiconductor substrate, forming a plurality of wiring trenches in the insulating film, forming a plurality of wirings in the plurality of wiring trenches, forming a resist mask having an opening for selectively exposing one of regions between the plurality of wirings, on the insulating film and the plurality of wirings, forming an air gap trench by removing the insulating film from the selectively exposed one of the regions between the plurality of wirings by etching using the resist mask, and forming an air gap in the air gap trench by depositing an inter-layer insulating film over the plurality of wirings after removal of the resist mask. | 10-22-2009 |
20090278261 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - An interlayer insulating film is formed on the upper surface of a semiconductor substrate, and lower-level interconnects are formed in the interlayer insulating film. A liner insulating film is formed on the upper surfaces of the interlayer insulating film and lower-level interconnects. An interlayer insulating film is formed on the upper surface of the liner insulating film. Upper-level interconnects are formed in the interlayer insulating film. The lower-level interconnects and the upper-level interconnects are connected with each other through vias. Parts of the liner insulating film formed in via-adjacent regions have a greater thickness than a part thereof formed outside the via-adjacent regions. | 11-12-2009 |
20090302473 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a first interlayer insulating film formed over a semiconductor substrate; a plurality of interconnects formed in the first interlayer insulating film; and a via and a dummy via, which are formed in the first interlayer insulating film so as to connect to at least one of the plurality of interconnects. A void is selectively formed between adjacent ones of the interconnects in the first interlayer insulating film. The dummy via is formed under an interconnect which is in contact with the void, so as to connect to the interconnect. The via and the dummy via are surrounded by the first interlayer insulating film with no void interposed therebetween. | 12-10-2009 |
20090302475 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first interlayer insulating film, and a plurality of first interconnects formed in the first interlayer insulating film. A void is selectively formed between adjacent ones of the plurality of first interconnects in the first interlayer insulating film, and a cap insulating film is formed in a region located over the void and between the interconnects. Respective widths of a lower end and an upper end of the void are substantially the same as a gap between the interconnects located adjacent to the void, and the lower end of the void is located lower than lower ends of the first interconnects located adjacent to the void. | 12-10-2009 |
20110175233 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes the steps of: forming a mask material film on an insulating film that is formed over a semiconductor substrate and then forming a mask pattern having a first trench formation opening and a second trench formation opening from the mask material film; forming, on the mask material film, a resist pattern having a third trench formation opening that exposes the first trench formation opening and covering the second trench formation opening; forming a first trench in the insulating film using the resist pattern and the mask pattern; and forming a second trench in the insulating film using the mask pattern after removing the resist pattern. | 07-21-2011 |
20120032333 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first insulating film is formed on a semiconductor substrate, an interconnect groove is formed in the first insulating film, the inside of the interconnect groove is filled with a metal film, thereby forming a first interconnect. Then, a protective film is formed on the first insulating film and the first interconnect, and the surface of the protective film is exposed to reactive gas, thereby forming a reaction layer on an interface between the first interconnect and the protective film. | 02-09-2012 |