Patent application number | Description | Published |
20080197502 | SEMICONDUCTOR DEVICE HAVING METAL WIRINGS OF LAMINATED STRUCTURE - A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material. | 08-21-2008 |
20080203576 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device including, forming a first insulating film above a silicon substrate, forming an impurity layer in the first insulating film by ion-implanting impurities into a predetermined depth of the first insulating film, and modifying the impurity layer to a barrier insulating film by annealing the first insulating film after the impurity layer is formed, is provided. | 08-28-2008 |
20090278231 | Semiconductor device and method for fabricating the same - The semiconductor device comprises a first insulation film | 11-12-2009 |
20090302362 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiO | 12-10-2009 |
20100001372 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film. | 01-07-2010 |
20100197046 | SEMICONDUCTOR DEVICE - A silicide film is formed between a ferroelectric capacitor structure, which is formed by sandwiching a ferroelectric film between a lower electrode and an upper electrode, and a conductive plug (the conductive material constituting the plug is tungsten (W) for example). Here, an example is shown in which a base film of the conductive plug is the silicide film. | 08-05-2010 |
20100203682 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device including a semiconductor device, an integrated circuit chip, a sealing resin encapsulating the integrated circuit chip and an insulating waterproof film covering at least a portion of a surface of said sealing resin and preventing penetration of moisture into the sealing resin. | 08-12-2010 |
20100248395 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A ferroelectric capacitor provided with a ferroelectric film ( | 09-30-2010 |
20110086508 | SEMICONDUCTOR DEVICE HAVING METAL WIRINGS OF LAMINATED STRUCTURE - A semiconductor device that includes a metal wiring formed on the insulating film and having a main wiring portion laminated with a plurality of metal films and a metal protection film formed at least on the upper surfaces of the main wiring portion and made of a precious metal material. | 04-14-2011 |
20120028374 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A ferroelectric capacitor provided with a ferroelectric film ( | 02-02-2012 |
20120288965 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Stable contact hole forming is attained even when an aluminum oxide film is present between layers provided with contact holes. The process comprises the steps of forming a first element layer on a semiconductor substrate; forming a first interlayer insulating film on the first element layer; forming a second element layer on the first interlayer insulating film; forming a second interlayer insulating film on the second element layer; forming a hole resist pattern on the second interlayer insulating film; conducting a first etching for forming of holes by etching the second interlayer insulating film; and conducting a second etching for extending of holes to the first element layer by etching the first interlayer insulating film. | 11-15-2012 |
20130087888 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a method for manufacturing a semiconductor device, including, forming a first insulating film on a semiconductor substrate, forming a capacitor on the first insulating film, forming a second insulating film covering the capacitor, forming a metal wiring on the second insulating film, forming a first capacitor protective insulating film covering the metal wiring and the second insulating film, forming an insulating sidewall on a side of the metal wiring, forming a third insulating film on the insulating sidewall, forming a hole by etching the third insulating film under a condition that an etching rate of the insulating sidewall would be lower than that of the third insulating film, and forming a conductive plug inside the hole. | 04-11-2013 |
20130161790 | METHOD OF MANUFACTURING A FeRAM DEVICE - A lower electrode film, a ferroelectric film, and an upper electrode film are formed on an insulation film covering a transistor formed on a semiconductor substrate. Furthermore, a Pt film is formed as a cap layer on the upper electrode film. Then, a hard mask (a TiN film and an SiO | 06-27-2013 |