Patent application number | Description | Published |
20090185943 | STEEL PLATE AND STEEL PLATE COIL - In a steel plate having tensile strength of 1 GPa or more at the normal temperature, the steel plate is made, stress decrement (SD) after uniform elongation in the stress-strain diagram obtained by using a tabular specimen of which is not less than 1.8×10 | 07-23-2009 |
20090236015 | ULTRAHIGH STRENGTH STEEL SHEET AND STRENGTH PART FOR AUTOMOBILE UTILIZING THE SAME - There is provided an ultrahigh strength steel sheet containing 0.10 to 0.40 mass % of C, 0.01 to 3.5 mass % of Cr, at least one selected from the group consisting of 0.10 to 2.0 mass % of Mo, 0.20 to 1.5 mass % of W, 0.002 to 1.0 mass % of V, 0.002 to 1.0 mass % of Ti and 0.005 to 1.0 mass % of Nb, 0.02 mass % or less of P and 0.01 mass % or less of S as impurities and the balance being Fe and unavoidable impurities based on the total mass of the steel sheet and having a base structure of lower bainite, a prior austenite grain size of 30 μm or smaller and a tensile strength of 980 MPa or higher. There is also provided an automotive strength part using the ultrahigh strength steel sheet. | 09-24-2009 |
20100254849 | MAGNESIUM ALLOY - An object of the invention is to provide a magnesium alloy having high strength and sufficient formability. A magnesium alloy mainly contains magnesium and has high tensile strength and high compression strength. The crystal grain structure of the alloy has a high angle grain boundary, and the inside of the crystal grain surrounded by the high angle grain boundary is composed of subgrains. | 10-07-2010 |
Patent application number | Description | Published |
20080270402 | Dispatching pages for raster-image processing prior to printing the pages by a printing device - A raster-imaging processing (RIP) time is predicted for each of a number of pages to be printed in printed-page number order. The pages are sorted based at least on when RIP should be finished for each page. The pages are dispatched to RIP components for RIP at least substantially in an order in which the pages have been sorted. Each page is dispatched to a next RIP component that is available. A RIP component is available for a given page to be dispatched thereto where a total size of the RIP component's output buffer minus space within this output buffer taken up by any pages ordered after the given page in the printed-page number order is greater than the needed space to store the given page. The pages as have been raster-image processed are retrieved from the output buffers in the printed-page number order and transmitted to a printing device. | 10-30-2008 |
20100153901 | Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. | 06-17-2010 |
20100153902 | DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK BY SELECTING TARGET EDGE PAIRS USED IN DETERMINING A MANUFACTURING PENALTY OF THE LITHOGRAPHIC MASK - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. | 06-17-2010 |
20100153903 | DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask. | 06-17-2010 |
20110116135 | MULTIBIT DIGITAL HALFTONING - Digital halftoning processes for producing a halftone image include, for each pixel in the image: indexing a two-dimensional look up table using a position of the pixel, identifying a threshold value for the pixel from the two-dimensional look up table, creating an index that indexes a three-dimensional lookup table using the threshold value and the position of the pixel, and obtaining an output value for the pixel from the three-dimensional look up table via the index. The digital halftoning processes also produce a halftone representation of the image from output values for corresponding pixels. | 05-19-2011 |
20110231803 | Wavefront engineering of mask data for semiconductor device design - Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel. | 09-22-2011 |
20120196210 | Determining manufacturability of lithographic mask based on manufacturing shape penalty of aspect ratio of edge that takes into account pair of connected edges of the edge - The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge. | 08-02-2012 |
Patent application number | Description | Published |
20130263063 | MASK DESIGN METHOD, PROGRAM, AND MASK DESIGN SYSTEM - A method, an article of manufacture, and a system for designing a mask. The method for designing a mask is implemented by a computer device having a memory, a processor device communicatively coupled to the memory, and a module configured to carry out the method including the steps of: generating an optical domain representation from a design pattern and an imaging light; and optimizing the optical domain representation under a constraint that values of negative excursions at predetermined evaluation points must be greater than or equal to predetermined negative threshold values assigned to the predetermined evaluation points; where: the optical domain representation is a variable representation of a wavefront; the imaging light is light that is transmitted through the mask; the negative excursions are in an object domain representation of the optical domain representation; and the predetermined evaluation points are in the object domain representation. | 10-03-2013 |
20140268075 | SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING COUNTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS - Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output | 09-18-2014 |
20140282291 | SOURCE-MASK OPTIMIZATION FOR A LITHOGRAPHY PROCESS - Systems and methods for optimizing a source shape and a mask shape for a lithography process are disclosed. One such method includes performing a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints. Further, a light source optimization for the lithography process is performed in accordance with the set of parameters. In addition, a joint light source-mask optimization is performed in accordance with the set of parameters. The method further includes iterating at least one of the mask optimization or the light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process. | 09-18-2014 |
20150088292 | METHOD OF PROVIDING DATA FOR MINIMIZING DIFFERENCE BETWEEN DIMENSIONS OF THREE-DIMENSIONAL STRUCTURE FORMED BY LASER RADIATION AND DESIGN VALUES OF SCAN PATH OF SUCH THREE-DIMENSIONAL STRUCTURE AND COMPUTER AND COMPUTER PROGRAM FOR PROVIDING SUCH DATA - Acquiring expected precision even in a case that partial shrinkage occurs. The present invention is a technique for providing data for minimizing a difference between dimensions of a three-dimensional structure formed by laser radiation and design values of a scan path of the three-dimensional structure, in which the technique includes: modeling a manufacturing process of the three-dimensional structure and formulating a shrinkage of material used in the manufacturing process; and performing an optimization calculation for minimizing the difference between the dimensions of the three-dimensional structure after the shrinkage of the material and the design values by using the formulated shrinkage model to compute the scan length x minimizing the difference, and in which the formulation includes formulating a shrinkage function in the case where the material shrinks according to the scan length x | 03-26-2015 |
20160109795 | SOURCE, TARGET AND MASK OPTIMIZATION BY INCORPORATING CONTOUR BASED ASSESSMENTS AND INTEGRATION OVER PROCESS VARIATIONS - Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output | 04-21-2016 |