Patent application number | Description | Published |
20100318743 | DYNAMIC SCREENTIP LANGUAGE TRANSLATION - When a user interface cursor hovers over a user interface item, a determination is made as to whether the user interface item has an associated screentip. If the user interface item has an associated screentip, text associated with the screentip is identified, a translated text string is located for the text string, and the translated text string is displayed in the screentip. If the user interface item does not have an associated screentip, a determination is made as to whether the user interface item contains a text string. If so, a determination is made as to whether a translated text string is available that corresponds to the text in the user interface item. If so, the translated text string is displayed in a screentip for the user interface item. | 12-16-2010 |
20130073955 | Dynamic Screentip Language Translation - When a user interface cursor hovers over a user interface item, a determination is made as to whether the user interface item has an associated screentip. If the user interface item has an associated screentip, text associated with the screentip is identified, a translated text string is located for the text string, and the translated text string is displayed in the screentip. If the user interface item does not have an associated screentip, a determination is made as to whether the user interface item contains a text string. If so, a determination is made as to whether a translated text string is available that corresponds to the text in the user interface item. If so, the translated text string is displayed in a screentip for the user interface item. | 03-21-2013 |
Patent application number | Description | Published |
20110101423 | JUNCTION FIELD EFFECT TRANSISTOR - A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced. | 05-05-2011 |
20110101424 | JUNCTION FIELD EFFECT TRANSISTOR - A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping. | 05-05-2011 |
20110101444 | ELECTROSTATIC PROTECTION DEVICE - An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a transistor, wherein the first region is doped with a first impurity of a first conductivity type and is separated from the second region which is doped with a second impurity of a second conductivity type opposite the first type, and wherein a dimensional constraint of the regions defines an operational threshold of the ESD protection device. In one example, the separation between a collector and an emitter of a bipolar transistor defines a trigger voltage to cause the electrostatic discharge protection device to become conducting. In another example, a width of a bipolar transistor base controls a holding voltage of the electrostatic discharge protection device. | 05-05-2011 |
20110101486 | BIPOLAR TRANSISTOR - A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation. | 05-05-2011 |
20110101500 | JUNCTION FIELD EFFECT TRANSISTOR - A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor. | 05-05-2011 |
20120028432 | METHODS OF FORMING A BIPOLAR TRANSISTOR - A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor. | 02-02-2012 |
20120074493 | FIELD EFFECT TRANSISTORS HAVING IMPROVED BREAKDOWN VOLTAGES AND METHODS OF FORMING THE SAME - Transistors having improved breakdown voltages and methods of forming the same are provided herein. In one embodiment, a method of forming a transistor comprises the steps of: forming a drain and a source by doping a semiconductor with a first dopant type to form a first type of semiconductor, the drain and source being separated from one another, wherein the drain comprises a first drain region of a first dopant concentration adjacent a second drain region, such that at least a portion of the second drain region is positioned between the first drain region and the source, and further comprising forming an intermediate region by doping the semiconductor so as to form a second type of semiconductor intermediate the drain and source, the intermediate region spaced apart from the second drain region. | 03-29-2012 |
20120112307 | BIPOLAR TRANSISTOR WITH GUARD REGION - A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation. | 05-10-2012 |
20120217551 | JUNCTION FIELD EFFECT TRANSISTOR WITH REGION OF REDUCED DOPING - A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping. | 08-30-2012 |
20130248711 | INFRARED SENSOR - An infrared sensor, comprising at least one pixel comprising a first sensor and a second sensor, wherein the first and second sensors are dissimilar. | 09-26-2013 |
20130259086 | TEMPERATURE SENSOR AND AN INFRARED DETECTOR INCLUDING SUCH A SENSOR - A temperature sensor for use in an infrared detector the temperature sensor comprising: a first resistor associated with a first thermal path having a first thermal conductivity between the first resistor and a substrate and a first temperature coefficient of resistance; a second resistor associated with a second thermal path having a second thermal conductivity between the second resistor and the substrate and a second temperature coefficient of resistance, and a measurement circuit responsive to changes in the resistance of the first and second resistors to estimate changes in temperature, and wherein at least one of (a) the first and second thermal conductivities are different or (b) the first and second temperature coefficients of resistance are different. | 10-03-2013 |
Patent application number | Description | Published |
20140151557 | PHOTONIC SENSOR AND A METHOD OF MANUFACTURING SUCH A SENSOR - A photonic sensor, comprising: a platform, a temperature sensor on the platform; and a structure formed on or as part of the platform. | 06-05-2014 |
20140190542 | WAFER SCALE THERMOELECTRIC ENERGY HARVESTER - An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements. | 07-10-2014 |
20140246066 | WAFER SCALE THERMOELECTRIC ENERGY HARVESTER - An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements. | 09-04-2014 |
20150014791 | SEMICONDUCTOR DEVICE, AND A METHOD OF IMPROVING BREAKDOWN VOLTAGE OF A SEMICONDUCTOR DEVICE - A semiconductor device having a first layer adjoining a semiconductor layer, and further comprising at least one field modification structure positioned such that, in use, a potential at the field modification structure causes an E-field vector at a region of an interface between the semiconductor and the first layer to be modified. | 01-15-2015 |