Patent application number | Description | Published |
20090325362 | METHOD OF RECYCLING AN EPITAXIED DONOR WAFER - A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer. | 12-31-2009 |
20100025728 | RELAXATION AND TRANSFER OF STRAINED LAYERS - The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or transferred onto, an intermediate substrate; b) a strain relaxation layer, made of crystalline material capable of being plastically deformed by a heat treatment at a relaxation temperature, at which the material constituting the thin film deforms by elastic deformation is deposited on the thin film; c) the thin film and the relaxation layer are transferred onto a substrate; and d) a thermal budget is applied at at least the relaxation temperature, so as to cause the plastic deformation of the relaxation layer and the at least partial relaxation of the thin film by elastic deformation, and thus to obtain the final heterostructure. | 02-04-2010 |
20100032793 | METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY - The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer. | 02-11-2010 |
20100035418 | PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS - The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusion barriers that prevent diffusion of contaminants during annealing. The invention also includes embodiments where the at least partially relaxed strained layer is patterned into islands by etching trenches and the like. The invention also provides semiconductor structures resulting from these methods, and further, provides such structures where the semiconductor materials are suitable for application to LED devices, laser devices, photovoltaic devices, and other optoelectronic devices. | 02-11-2010 |
20100176490 | METHODS OF FORMING RELAXED LAYERS OF SEMICONDUCTOR MATERIALS, SEMICONDUCTOR STRUCTURES, DEVICES AND ENGINEERED SUBSTRATES INCLUDING SAME - Methods of fabricating relaxed layers of semiconductor materials include forming structures of a semiconductor material overlying a layer of a compliant material, and subsequently altering a viscosity of the compliant material to reduce strain within the semiconductor material. The compliant material may be reflowed during deposition of a second layer of semiconductor material. The compliant material may be selected so that, as the second layer of semiconductor material is deposited, a viscosity of the compliant material is altered imparting relaxation of the structures. In some embodiments, the layer of semiconductor material may comprise a III-V type semiconductor material, such as, for example, indium gallium nitride. Methods of fabricating semiconductor structures and devices are also disclosed. Novel intermediate structures are formed during such methods. Engineered substrates include a plurality of structures comprising a semiconductor material disposed on a layer of material exhibiting a changeable viscosity. | 07-15-2010 |
20110180911 | METHODS FOR RELAXATION AND TRANSFER OF STRAINED LAYERS AND STRUCTURES FABRICATED THEREBY - The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer. | 07-28-2011 |
20110291247 | RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS - The present invention relates to a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment. | 12-01-2011 |
20120098033 | HETEROSTRUCTURES COMPRISING CRYSTALLINE STRAIN RELAXATION LAYERS - The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or transferred onto, an intermediate substrate; b) a strain relaxation layer, made of crystalline material capable of being plastically deformed by a heat treatment at a relaxation temperature at which the material constituting the thin film deforms by elastic deformation is deposited on the thin film; c) the thin film and the relaxation layer are transferred onto a substrate; and d) a thermal budget is applied at at least the relaxation temperature, so as to cause the plastic deformation of the relaxation layer and the at least partial relaxation of the thin film by elastic deformation, and thus to obtain the final heterostructure. | 04-26-2012 |
20120100691 | PROCESSES FOR FABRICATING HETEROSTRUCTURES - The invention relates to a process for fabricating a heterostructure. This process comprises heating an intermediate heterostructure. The intermediate heterostructure comprises a crystalline strain relaxation layer interposed directly between a first substrate and a strained layer of crystalline semiconductor material. The process further comprises causing plastic deformation of the crystalline strain relaxation layer and elastic deformation of the strained layer of crystalline semiconductor material to at least partially relax the strained layer of crystalline semiconductor material. | 04-26-2012 |
Patent application number | Description | Published |
20090275020 | Traceability of Cellular Cycle Anomalies Targeting Oncology and Neurodegeneration - The present invention relates to the field of medicine and biology. It concerns a novel test for screening and for therapeutic follow-up in oncology. More particularly, it relates to diagnostic and/or therapeutic tests in oncology and on neurodegenerative diseases. It is a diagnostic test and a prognostic test for various cancers (breast cancer, bladder cancer, ovarian cancer, lung cancer, skin cancer, prostate cancer, colon cancer, liver cancer, gliboblastoma, sarcoma, leukemia, etc.) and therapeutics solutions for specific neurodegenerative diseases. More particularly, the invention concerns the use of the LIV21 protein, LIV21 gene and of derivatives thereof as diagnostic and prognostic markers for cancers. The invention therefore concerns the detection of the LIV21 protein with a kit comprising LIV21-specific antibodies. | 11-05-2009 |
20100285971 | Traceability of Cellular Cycle Anomalies Targeting Oncology and Neurodegeneration - The invention concerns a novel diagnostic and/or prognostic test for cancer. More particularly, the invention concerns the human LIV21 protein, its use as cancer diagnostic and prognostic markers. The invention also concerns methods for treating cancers and neurodegenerative diseases as well as compositions therefor. | 11-11-2010 |
20130059792 | Traceability of Cellular Cycle Ano - The present invention relates to the field of medicine and biology. It concerns a novel test for screening and for therapeutic follow-up in oncology. More particularly, it relates to diagnostic and/or therapeutic tests in oncology and on neurodegenerative diseases. It is a diagnostic test and a prognostic test for various cancers (breast cancer, bladder cancer, ovarian cancer, lung cancer, skin cancer, prostate cancer, colon cancer, liver cancer, glioblastoma, sarcoma, leukemia, etc.) and therapeutics solutions for specific neurodegenerative diseases. More particularly, the invention concerns the use of the LIV21 protein, LIV21 gene and of derivatives thereof as diagnostic and prognostic markers for cancers. The invention therefore concerns the detection of the LIV21 protein with a kit comprising LIV21-specific antibodies. | 03-07-2013 |
Patent application number | Description | Published |
20120282471 | ROOFING GRANULES INCLUDING BASE PARTICLES AND A COATING - A roofing product can include roofing granules that can include base particles and a coating covering the base particles of the roofing granules. In a particular aspect, the coating can include a compound that includes a metallic element; and nitrogen, carbon, or a combination of nitrogen and carbon. In another aspect, the coating has a reflectivity of at least approximately 17% for a radiation having wavelengths in a range of 1000 nm to 2500 nm. In a further aspect, the particular coating has a coating reflectivity no greater than 99% of a TiO | 11-08-2012 |
20130082221 | ROOFING GRANULES INCLUDING BASE PARTICLES AND A COATING - A roofing product can include roofing granules that can include substrates and a coating covering the substrates of the roofing granules. The substrates can be in the form of base particles, such as ceramic base particles or proppants, or base particles having a coating with an L* of at least approximately 55. In a particular aspect, a coating at an exposed surface of the roofing granule can include a compound that includes a metallic element; and nitrogen, carbon, or a combination of nitrogen and carbon. In another aspect, the coating has a relatively low L*, reasonably high solar reflectance, and good emissivity. The coating can be formed on a substrate using a fluidized bed. In a particular aspect, the coating can be performed as a chemical vapor deposition or a sol-gel process. If needed or desired, the roofing granules can be doped to achieve their desired properties. | 04-04-2013 |
20130089707 | COATED GRANULES FOR CONSTRUCTION APPLICATIONS - Provided are construction material granules. In one embodiment, the granules include a core enclosed by a layer comprising a conductive material and a layer comprising a dielectric material. Also provided are related methods of constructing such materials. | 04-11-2013 |
20140254037 | MIRROR COMPRISING A SILVERING-MODIFYING LAYER - A colored mirror includes a transparent substrate and a reflective layer, including a coloring layer between the substrate and the reflective layer, the coloring layer including a matrix and a colorant. Furthermore, a process for preparing a mirror including a transparent substrate and a reflective layer, a coloring layer between the substrate and the reflective layer, the coloring layer including a matrix and a colorant, includes the production of the coloring layer on the substrate then the deposition of the reflective layer on the coloring layer. | 09-11-2014 |