Patent application number | Description | Published |
20090273102 | Semiconductor Substrate and Method for Manufacturing the Same - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. | 11-05-2009 |
20110076830 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N | 03-31-2011 |
20140342525 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N | 11-20-2014 |
20140342526 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N | 11-20-2014 |
20140342535 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A semiconductor substrate preventing a void from being generated in an epitaxial film buried in a trench. An N-type first epitaxial film and first trenches are formed on an N | 11-20-2014 |
Patent application number | Description | Published |
20080224150 | Silicon carbide semiconductor device - The SiC semiconductor device includes a substrate of a first conduction type made of silicon carbide, a drift layer of the first conduction type made of silicon carbide, the drift layer being less doped than the substrate, a cell portion constituted by a part of the substrate and a part of the drift layer, a circumferential portion constituted by another part of the substrate and another part of the drift layer, the circumferential portion being formed so as to surround the cell portion, and a RESURF layer of a second conduction type formed in a surface portion of the drift layer so as to be located in the circumferential portion. The RESURF layer is constituted by first and second RESURF layers having different impurity concentrations, the second RESURF layer being in contact with an outer circumference of the first RESURF layer and extending to a circumference of the cell portion. | 09-18-2008 |
20080307790 | Steam Engine - A steam engine has a pipe shaped fluid container, a heating and cooling devices respectively provided at a heating and cooling portions of the fluid container, and an output device connected to the fluid container, so that the output device is operated by the fluid pressure change in the fluid container, to generate an electric power. In such a steam engine, an inner radius “r | 12-18-2008 |
20100278717 | Method and apparatus for manufacturing carbon nanotube - A carbon nanotube manufacturing method wherein a catalyst is heated in a reaction chamber while the reaction chamber is filled with argon gas containing hydrogen. When a predetermined temperature is reached in the reaction chamber, the reaction chamber is evacuated. Then a raw material gas as a carbon source is charged and sealed in the reaction chamber whereupon the synthesis of carbon nanotube begins. Subsequently, when a condition in which the synthesis of carbon nanotubes has proceeded to a predetermined level is detected, gases in the reaction chamber are exhausted. Then, the raw material gas is changed and sealed in the reaction tube again. Thereafter, the charging (synthesizing) operation and the exhausting operation are repeated until the carbon nanotube with a desired film thickness are synthesized. A carbon nanotube manufacturing apparatus is also disclosed | 11-04-2010 |
Patent application number | Description | Published |
20080240507 | Information device operation apparatus - An information device operation apparatus includes an image capturing device, an illumination device, a controller, image storage device, operation object extracting device, detection device, and signal output device. The image storage device stores a plurality of images that are acquired by the image capturing device under a plurality of illumination intensity conditions. The operation object extracting device extracts the operation object by comparing the plurality of images. The detection device detects at least one of a predetermined shape and a movement of the operation object that is extracted by the operation object extracting device. The signal output device outputs a signal to the target device, the signal corresponding to the at least one of the predetermined shape and the movement of the operation object detected by the detection device. | 10-02-2008 |
20090213951 | Method of suppressing carrier leak in OFDM transmission and radio transmitter using same method - In an OFDM type radio transmitter, an orthogonal modulator performs an orthogonal modulation of an I-component and a Q-component, an orthogonal component output circuit produces the I-component and the Q-component in accordance with set values, and a correction circuit sets the I-component and the Q-component to zero. The correction circuit further corrects offset values of the I-component and the Q-component by way of the orthogonal component output circuit to minimize an output power of the orthogonal modulator. The number of times of changing the set values of the orthogonal component output circuit is limited to predetermined values in correcting the offset values. | 08-27-2009 |
20110308355 | Adsorption agent for noble metal, method for manufacturing the same, and method for recovering noble metal - A noble metal adsorption agent includes algae or residue of algae having an amino group as a functional group. A noble metal is retrieved by a method including: adsorbing the noble metal on the noble metal adsorption agent; and retrieving the noble metal. The noble metal is solved in a liquid. Thus, by using the noble metal adsorption agent, the noble metal is selectively retrieved. | 12-22-2011 |