Patent application number | Description | Published |
20140114971 | Systems and Methods for Interest-Driven Data Sharing in Interest-Driven Business Intelligence Systems - Systems and methods for interest-driven data sharing in interest-driven business intelligence systems in accordance with embodiments of the invention are illustrated. In one embodiment, an interest-driven data sharing server system includes a processor, a memory configured to store an interest-driven data sharing application, raw data storage, metadata storage configured to store data description metadata describing the raw data, and report storage configured to store previously generated reports, wherein the interest-driven data sharing application configures the processor to receive a report specification, locate at least one previously generated report stored in the report storage, identify raw data stored in the raw data storage using the data description metadata and at least one of the reporting data requirements, calculate redundant data metadata using the located previously generated reports and the identified raw data, determine modified reporting data requirements, retrieve updated source data, and generate reporting data based on the updated source data. | 04-24-2014 |
20140258209 | Systems and Methods for Interest-Driven Distributed Data Server Systems - Systems and methods for interest-driven business intelligence systems in accordance with embodiments of the invention are illustrated. In one embodiment, an interest-driven distributed data server system includes a processor, an interest-driven distributed data server application, aggregate data storage, and a data source directory, wherein the interest-driven distributed data server application configures the processor to obtain reporting data requirements, determine at least one data dimension using the reporting data requirements, identify at least one data source identified that can provide data associated with the data dimension, generate data source job data, transmit the data source job data to at least one data source, and receive job response data, store the received job response data in the aggregate data storage, build reporting data based on the reporting data requirements, and transmit the reporting data. | 09-11-2014 |
Patent application number | Description | Published |
20140114909 | Systems and Methods for Providing Performance Metadata in Interest-Driven Business Intelligence Systems - Interest-driven business intelligence server systems that provide performance metadata are described. In the disclosed embodiments, an interest-driven business intelligence server system receives a report specification. The report specification includes at least reporting data requirement. The interest-driven business intelligence server determines performance metadata information for an interest-driven data pipeline that is utilized to generate reporting data based on the report specification. The performance metadata information for the interest-driven data pipeline is transmitted to an interest-driven user visualization system by the interest-driven business intelligence server system. | 04-24-2014 |
20150081353 | Systems and Methods for Interest-Driven Business Intelligence Systems Including Segment Data - Systems and methods for interest-driven business intelligence systems including segment data in accordance with embodiments of the invention are illustrated. In one embodiment, an interest-driven data visualization system includes a processor and a memory wherein an interest-driven data visualization application configures the processor to define reporting data requirements, including at least one piece of reporting data metadata, generate data retrieval job data, transmit the data retrieval job data to an interest-driven business intelligence server system, receive source data from the interest-driven business intelligence server system, create at least one piece of reporting data using the received source data, the data description metadata, and the reporting data metadata, and generate a set of segment data based on the reporting data, where a piece of segment data in the set of segment data includes a subset of the reporting data. | 03-19-2015 |
20150081618 | Systems and Methods for Interest-Driven Business Intelligence Systems Including Event-Oriented Data - Systems and methods for interest-driven business intelligence systems including event-oriented data in accordance with embodiments of the invention are illustrated. In one embodiment, an interest-driven business intelligence system includes raw data storage configured to contain raw data and perform ETL processes, a data mart configured to contain metadata that describes the raw data, and an intermediate processing layer, wherein the intermediate processing layer is configured to compile an interest-driven data pipeline configured to generate ETL processing jobs to generate event-oriented data from the raw data by filtering the raw data based on the metadata describing the raw data, determining ordering data based on the metadata describing the raw data, aligning the filtered raw data based on the ordering data, and generating event-oriented data based on the aligned filtered raw data, and storing the event-oriented data in the data mart. | 03-19-2015 |
Patent application number | Description | Published |
20110013670 | TEMPERATURE MEASUREMENT USING A DIODE WITH SATURATION CURRENT CANCELLATION - Various embodiments provide systems and methods measuring the temperature of a device using a semiconductor temperature sensor, such as a diode. This invention allows the use of an uncalibrated diode to be used as a temperature sensor by applying a sinusoidally varying forcing current to the diode and measuring the rate of change of the voltage across the diode. Embodiments advantageously provide for a rapid, responsive temperature measuring, substantially eliminating the effect of lead resistance associated with the temperature sensor. | 01-20-2011 |
20110226442 | ALIGNMENT MECHANISM - An alignment mechanism is disclosed which includes a mount, a beam having a first end affixed to the mount and a second end. The beam is an order of magnitude more rigid along its longitudinal axis than along an axis orthogonal to its longitudinal axis. The second end of the beam is affixed to a first device having a surface configured to contact a second device. The beam applies a normal force component to the second device through the first device and allows movement at the second end in directions orthogonal to the normal force component. | 09-22-2011 |
20120103094 | SYSTEM AND METHOD FOR ACCELERATING A DEVICE - An acceleration device includes an actuator configured to displace a mass in a reciprocating motion at a desired frequency, a mount configured to hold a device, such as an accelerometer device, and at least one spring connecting the mount to the mass. The actuator is used to apply a force to achieve resonance. The actuator may comprise a voice coil motor, wherein the voice coil motor includes a permanent magnet and an armature and wherein said armature comprises part of said mass. The actuator applies a periodic force to the mass. The periodic force may be a sinusoidal force. Preferably, the applied force is aligned with a resulting velocity of the mass. The mount may include a test socket to which the device is electrically connected. The spring may comprises one or more flexure elements. The acceleration device may be used with a handler device to connect and disconnect the device to and from the mount. Optionally, the handler device includes an environmental chamber surrounding the mount. | 05-03-2012 |
20150300911 | SYSTEM AND METHOD FOR ACCELERATING DEVICE - An acceleration device includes an actuator configured to displace a mass in a reciprocating motion at a desired frequency, a mount configured to hold a device, such as an accelerometer device, and at least one spring connecting the mount to the mass. The actuator is used to apply a force to achieve resonance. The actuator may comprise a voice coil motor, wherein the voice coil motor includes a permanent magnet and an armature and wherein said armature comprises part of said mass. The actuator applies a periodic force to the mass. The periodic force may be a sinusoidal force. Preferably, the applied force is aligned with a resulting velocity of the mass. The mount may include a test socket to which the device is electrically connected. The spring may comprises one or more flexure elements. The acceleration device may be used with a handler device to connect and disconnect the device to and from the mount. Optionally, the handler device includes an environmental chamber surrounding the mount. | 10-22-2015 |
Patent application number | Description | Published |
20100032731 | SCHOTTKY JUNCTION-FIELD-EFFECT-TRANSISTOR (JFET) STRUCTURES AND METHODS OF FORMING JFET STRUCTURES - In accordance with an aspect of the invention, A Schottky junction field effect transistor (JFET) is created using cobalt silicide, or other Schottky material, to form the gate contact of the JFET. The structural concepts can also be applied to a standard JFET that uses N− type or P− type dopants to form the gate of the JFET. In addition, the structures allow for an improved JFET linkup with buried linkup contacts allowing improved noise and reliability performance for both conventional diffusion (N− and P− channel) JFET structures and for Schottky JFET structures. In accordance with another aspect of the invention, the gate poly, as found in a standard CMOS or BiCMOS process flow, is used to perform the linkup between the source and the junction gate and/or between the drain and the junction gate of a junction filed effect transistor (JFET). Use of a bias on the gate linkup of the JFET allows an additional tuning knob for the JFET that can be optimized to trade off breakdown characteristics with reduced on resistance. In accordance with yet another aspect of the invention, a patterned buried layer is used to form the back gate control for a junction field effect transistor (JFET). The structure allows a layout or buried layer pattern change to adjust the pinch-off voltage of the JFET structure. Vertical and lateral diffusion of the buried layer is used to adjust the JFET operating parameters with a simple change in the buried layer patterns. In addition, the structures allow for increased breakdown voltage by leveraging charge sharing concepts and improving channel confinement for power JFET structures. These concepts can also be applied to both N− channel and P− channel diffusion JFETs and to Schottky JFET structures. | 02-11-2010 |
20110254118 | Schottky Diode with Control Gate for Optimization of the On State Resistance, the Reverse Leakage, and the Reverse Breakdown - A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that lies between the metal-silicon junction of the Schottky diode and the n+ cathode contact of the Schottky diode. | 10-20-2011 |
20120060587 | Gas Detector that Utilizes an Electric Field to Assist in the Collection and Removal of Gas Molecules - A semiconductor-based gas detector enhances the collection of gas molecules and also provides a self-contained means for removing collected gas molecules by utilizing one or more electric fields to transport the gas molecules to and away from a metallic material that has a high permeability to the gas molecules. | 03-15-2012 |
20120244689 | SCHOTTKY DIODE WITH CONTROL GATE FOR OPTIMIZATION OF THE ON STATE RESISTANCE, THE REVERSE LEAKAGE, AND THE REVERSE BREAKDOWN - A Schottky diode optimizes the on state resistance, the reverse leakage current, and the reverse breakdown voltage of the Schottky diode by forming an insulated control gate over a region that lies between the metal-silicon junction of the Schottky diode and the n+ cathode contact of the Schottky diode. | 09-27-2012 |
20130009271 | Schottky-Clamped Bipolar Transistor with Reduced Self Heating - The self heating of a high-performance bipolar transistor that is formed on a fully-isolated single-crystal silicon region of a silicon-on-insulator (SOI) structure is substantially reduced by forming a Schottky structure in the same fully-isolated single-crystal silicon region as the bipolar transistor is formed. | 01-10-2013 |
20150270335 | HV COMPLEMENTARY BIPOLAR TRANSISTORS WITH LATERAL COLLECTORS ON SOI WITH RESURF REGIONS UNDER BURIED OXIDE - Complementary high-voltage bipolar transistors in silicon-on-insulator (SOI) integrated circuits is disclosed. In one disclosed embodiment, a collector region is formed in an epitaxial silicon layer disposed over a buried insulator layer. A base region and an emitter are disposed over the collector region. An n-type region is formed under the buried insulator layer (BOX) by implanting donor impurity through the active region of substrate and BOX into a p-substrate. Later in the process flow this n-type region is connected from the top by doped poly-silicon plug and is biased at Vcc. In this case it will deplete lateral portion of PNP collector region and hence, will increase its BV. | 09-24-2015 |
Patent application number | Description | Published |
20110147820 | Non-Volatile Memory Cell Having a Heating Element and a Substrate-Based Control Gate - The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing. | 06-23-2011 |
20120230118 | NON-VOLATILE MEMORY CELL HAVING A HEATING ELEMENT AND A SUBSTRATE-BASED CONTROL GATE - The number of times that a non-volatile memory (NVM) can be programmed and erased is substantially increased by utilizing a localized heating element that anneals the oxide that is damaged by tunneling charge carriers when the NVM is programmed and erased. The program and erase voltages are also reduced when heat from the heating element is applied prior to programming and erasing. | 09-13-2012 |
20130248935 | SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH A SHALLOW OUT-DIFFUSED P+ EMITTER REGION - A pnp SiGe heterojunction bipolar transistor (HBT) reduces the rate that p-type dopant atoms in the p+ emitter of the transistor out diffuse into a lowly-doped region of the base of the transistor by epitaxially growing the emitter to include a single-crystal germanium region and an overlying single-crystal silicon region. | 09-26-2013 |
20130249057 | SIGE HETEROJUNCTION BIPOLAR TRANSISTOR WITH AN IMPROVED BREAKDOWN VOLTAGE-CUTOFF FREQUENCY PRODUCT - The product of the breakdown voltage (BV | 09-26-2013 |
20150287716 | METHOD FOR CREATING THE HIGH VOLTAGE COMPLEMENTARY BJT WITH LATERAL COLLECTOR ON BULK SUBSTRATE WITH RESURF EFFECT - Complementary high-voltage bipolar transistors formed in standard bulk silicon integrated circuits are disclosed. In one disclosed embodiment, collector regions are formed in an epitaxial silicon layer. Base regions and emitters are disposed over the collector region. An n-type region is formed under collector region by implanting donor impurities into a p-substrate for the PNP transistor and implanting acceptor impurities into the p-substrate for the NPN transistor prior to depositing the collector epitaxial regions. Later in the process flow these n-type and p-type regions are connected to the top of the die by a deep n+ and p+ wells respectively. The n-type well is then coupled to VCC while the p-type well is coupled to GND, providing laterally depleted portions of the PNP and NPN collector regions and hence, increasing their BVs. | 10-08-2015 |
20150340448 | METHOD FOR CREATION OF THE GATE SHIELD IN ANALOG/RF POWER ED-CMOS IN SIGE BICMOS TECHNOLOGIES - A method of fabricating a MOSFET transistor in a SiGe BICMOS technology and resulting structure having a drain-gate feedback capacitance shield formed between a gate electrode and the drain region. The shield does not overlap the gate and thereby minimizes effect on the input capacitance of the transistor. The process does not require complex or costly processing since the shield is composed of bipolar base material commonly used in SiGe BICMOS technologies. | 11-26-2015 |
Patent application number | Description | Published |
20090053749 | Method and Apparatus for High Throughput Diagnosis of Diseased Cells With Microchannel Devices - The method and apparatus of the present invention detects changes in cell biomechanics caused by any of a variety of diseases and conditions. In one embodiment, the method and apparatus of the invention detect infection of red blood cells. In one embodiment, the invention is a method and apparatus comprising a microfluidic channel with a constriction, for trapping infected red blood cells while allowing healthy red blood cells to deform and pass through the channel. In another embodiment, the invention comprises a suspended microchannel resonator for detecting and counting red blood cells at the constriction of the microfluidic channel. | 02-26-2009 |
20110124095 | Method and apparatus for high throughput diagnosis of diseased cells with microchannel devices - The method and apparatus of the present invention detects changes in cell biomechanics caused by any of a variety of diseases and conditions. In one embodiment, the method and apparatus of the invention detect infection of red blood cells. In one embodiment, the invention is a method and apparatus comprising a microfluidic channel with a constriction, for trapping infected red blood cells while allowing healthy red blood cells to deform and pass through the channel. In another embodiment, the invention comprises a suspended microchannel resonator for detecting and counting red blood cells at the constriction of the microfluidic channel. | 05-26-2011 |
20140345369 | System and Method for Measuring Viscosity Using Particle Transit Time in Resonant Microfluidic Channels - A method for measuring a the viscosity of a fluid in a microchannel including steps of introducing a fluid containing particles to the microchannel, causing the fluid to flow through the microchannel by a applying a pressure drop, measuring a transit time of one or more particles through the microchannel, determining the flow rate from the particle transit times and the known volume of the microchannel, and determining the viscosity of the fluid from the flow rate and pressure drop. | 11-27-2014 |
20150072373 | Measurement of Cell Growth and Drug Susceptibility by Resonant Mass Measurement - System and Method for measuring the growth of a bacterial culture and its response to one or more antimicrobials using measurement of mass of individual microbes. Methods include periodic sampling, determining change in mass and concentration, and comparing growth rates of cultures in nutrient broth vs. mixtures containing various antibiotic mixtures. A number of antimicrobials can be compared in one measurement by multiplexing or using multiple sensors to measure in parallel. Growth and antibiotic efficacy can be assessed at low concentrations at the onset of growth, typically within 1 to 2 hours. | 03-12-2015 |
Patent application number | Description | Published |
20090044608 | Method And Apparatus For Measuring Particle Characteristics through Mass Detection - Method for measuring a target particle property. A suspended microchannel resonator is calibrated to determine the relationship between a detected mass and a resonance frequency shift of the resonator. The target particle is suspended in a fluid and introduced into the resonator, and the resonator frequency shift due to the particle is measured. Target particle mass is calculated from the resonator frequency shift, the target particle density, and the fluid density. A target particle property such as size or volume is determined from the calculated target particle mass. | 02-19-2009 |
20100227310 | FLOW CYTOMETRY METHODS AND IMMUNODIAGNOSTICS WITH MASS SENSITIVE READOUT - Mass cytometry method. In one aspect, the method includes providing a sample having at least one cell type and mixing the sample with material such as nanoparticles functionalized with affinity molecules for the at least one cell type. The sample is transported through a suspended microchannel resonator to record a mass histogram and a cell count for the at least one cell type is determined from the histogram. | 09-09-2010 |
20120174657 | Method for Measuring Bacterial Growth and Antibiotic Resistance using Suspended Microchannel Resonators - Methods for improving measurements of bacterial growth, such as mass, in Suspended Microchannel Resonators (SMR's). Methods include techniques to provide for bacterial growth over time in response to changing fluid environment to aid in determining parameters such as drug resistance and drug susceptibility. In particular the methods include trapping multiple bacteria in the SMR for a time period and varying the fluid to include sequences of nutrients and antibiotics, and measuring the rate of mass change of the bacteria in response to the changes in fluid composition. | 07-12-2012 |
20140051107 | Method and Apparatus for Measuring Particle Characteristics through Mass Detection - Method for measuring a target particle property. A suspended microchannel resonator is calibrated to determine the relationship between a detected mass and a resonance frequency shift of the resonator. The target particle is suspended in a fluid and introduced into the resonator, and the resonator frequency shift due to the particle is measured. Target particle mass is calculated from the resonator frequency shift, the target particle density, and the fluid density. A target particle property such as size or volume is determined from the calculated target particle mass. | 02-20-2014 |
Patent application number | Description | Published |
20120147449 | SPACERS FOR INSULATED GLASS UNITS - This disclosure provides spacers for smart windows. In one aspect, a window assembly includes a first substantially transparent substrate having an optically switchable device on a surface of the first substrate. The optically switchable device includes electrodes. A first electrode of the electrodes has a length about the length of a side of the optically switchable device. The window assembly further includes a second substantially transparent substrate a metal spacer between the first and the second substrates. The metal spacer has a substantially rectangular cross section, with one side of the metal spacer including a recess configured to accommodate the length of the first electrode such that there is no contact between the first electrode and the metal spacer. A primary seal material bonds the first substrate to the metal spacer and bonds the second substrate to the metal spacer. | 06-14-2012 |
20140192393 | SPACERS FOR INSULATED GLASS UNITS - This disclosure provides spacers for smart windows. In one aspect, a window assembly includes a first substantially transparent substrate having an optically switchable device on a surface of the first substrate. The optically switchable device includes electrodes. A first electrode of the electrodes has a length about the length of a side of the optically switchable device. The window assembly further includes a second substantially transparent substrate a metal spacer between the first and the second substrates. The metal spacer has a substantially rectangular cross section, with one side of the metal spacer including a recess configured to accommodate the length of the first electrode such that there is no contact between the first electrode and the metal spacer. A primary seal material bonds the first substrate to the metal spacer and bonds the second substrate to the metal spacer. | 07-10-2014 |
20150346575 | SPACERS FOR INSULATED GLASS UNITS - This disclosure provides spacers for smart windows. In one aspect, a window assembly includes a first substantially transparent substrate having an optically switchable device on a surface of the first substrate. The optically switchable device includes electrodes. A first electrode of the electrodes has a length about the length of a side of the optically switchable device. The window assembly further includes a second substantially transparent substrate a metal spacer between the first and the second substrates. The metal spacer has a substantially rectangular cross section, with one side of the metal spacer including a recess configured to accommodate the length of the first electrode such that there is no contact between the first electrode and the metal spacer. A primary seal material bonds the first substrate to the metal spacer and bonds the second substrate to the metal spacer. | 12-03-2015 |