Patent application number | Description | Published |
20110249075 | Remote Control Operations in a Video Conference - Some embodiments provide a method for allowing a first device that is in a video conference with a second mobile device to remotely control the second mobile device. The method sends images captured by a camera of the first device to the second device. The method receives images captured by a camera of the second device. The method sends a command through a communication channel of a real-time communication session to the second device. The command is for instructing the second device to perform an operation that modifies the images captured by the camera of the second device. | 10-13-2011 |
20110249133 | COMPRESSION-QUALITY DRIVEN IMAGE ACQUISITION AND PROCESSING SYSTEM - Embodiments of the present invention provide a video encoding system in which a video coding engine establishes coding quality metrics that govern its own operation as well as the operation of a camera and/or a pre-processor. An imaging system may include an image acquisition system, a pre-processor and a coding engine. The coding engine may output a quality indicator identifying, for each portion of a video sequence currently being coded, a relatively level of coding quality that is being achieved. The imaging system further may include an image acquisition controller and a pre-processor controller that impose respective operating parameters upon the image acquisition system and the pre-processor in response to these quality indicators. In this manner, overall performance of the imaging system may be improved. | 10-13-2011 |
20110249729 | ERROR RESILIENT HIERARCHICAL LONG TERM REFERENCE FRAMES - Embodiments of the present invention provide a video encoding system that codes video sequence into a multi-level hierarchy based on levels of long term reference (LTR) frames. According to the present invention, an encoder designates a reference frame as a long term reference (LTR) frame and transmits the LTR frame to a receiver. Upon receiving feedback from the receiver acknowledging receipt of the LTR frame, the encoder periodically codes subsequent frames as reference frames using the acknowledged LTR frame as a reference and designates subsequent reference frames as secondary LTR frames. A determined number of frames after each secondary LTR frame may be coded using a preceding secondary LTR frame as a reference. | 10-13-2011 |
20110274167 | VIDEO CODING SYSTEM USING SUB-CHANNELS AND CONSTRAINED PREDICTION REFERENCES TO PROTECT AGAINST DATA TRANSMISSION ERRORS - A coding technique is disclosed in which frames of a video sequence are assigned to one of a plurality of sub-channels to be transmitted to a decoder. The frames are coded according to predictive coding techniques such that ordinarily prediction references of the frames in each sub-channel only reach the reference frames that occur within the same sub-channel. Thus, if transmission errors arise with respect to one sub-channel, decoding may occur for another sub-channel until the transmission error is detected and corrected. | 11-10-2011 |
20110302473 | ERROR CORRECTION CODING - Coded video data may be transmitted between an encoder and a decoder using multiple FEC codes and/or packets for error detection and correction. Only a subset of the FEC packets need be transmitted between the encoder and decoder. The FEC packets of each FEC group may take, as inputs, data packets of a current FEC group and also an untransmitted FEC packet of a preceding FEC group. Due to relationships among the FEC packets, when transmission errors arise and data packets are lost, there remain opportunities for a decoder to recover lost data packets from earlier-received FEC groups when later-received FEC groups are decoded. This opportunity to recover data packets from earlier FEC groups may be useful in video coding and other systems, in which later-received data often cannot be decoded unless earlier-received data is decoded properly. | 12-08-2011 |
20120106632 | METHOD AND APPARATUS FOR ERROR RESILIENT LONG TERM REFERENCING BLOCK REFRESH - A system and method for coding video data wherein a pixel block may be coded for refresh with reference to an LTR frame that was successfully transmitted, or has a high probability of having been successfully transmitted from the encoder to the decoder. Not all pixel blocks in the frame may be refreshed at the same rate. Pixel blocks containing edge details, containing a significant object, or containing foreground image data may be refreshed more often than pixel blocks containing smooth, background, or relatively less significant image data. | 05-03-2012 |
20120170654 | VIDEO CODING SYSTEM USING IMPLIED REFERENCE FRAMES - A video coding/decoding system builds implied reference frames from a plurality of reference frames developed during coding. Coded data of reference pictures are decoded and stored in a reference picture cache. An implied reference frame may be derived from a plurality of reference frames and may be stored in the reference picture cache. Thereafter, coding of new input data may proceed using the implied reference frame as a source of prediction. The method may be used to identify visual elements such as background elements that may persist in video over a longer period that can be captured by the system under conventional reference frames assembly and eviction. Implied reference frames may be built at both an encoder and a decoder to serve as sources of prediction. | 07-05-2012 |
20130195178 | OBJECT DETECTION INFORMED ENCODING - Embodiments of the present invention provide techniques for coding video data efficiently based on detection of objects within video sequences. A video coder may perform object detection on the frame and when an object is detected, develop statistics of an area of the frame in which the object is located. The video coder may compare pixels adjacent to the object location to the object's statistics and may define an object region to include pixel blocks corresponding to the object's location and pixel blocks corresponding to adjacent pixels having similar statistics as the detected object. The coder may code the video frame according to a block-based compression algorithm wherein pixel blocks of the object region are coded according to coding parameters generating relatively high quality coding and pixel blocks outside the object region are coded according to coding parameters generating relatively lower quality coding. | 08-01-2013 |
20130254620 | IMPROVED ERROR CORRECTION CODING FOR RECOVERING MULTIPLE PACKETS IN A GROUP IN VIEW OF LIMITED BANDWIDTH - Coded video data may be transmitted between an encoder and a decoder using multiple FEC codes and/or packets for error detection and correction. Only a subset of the FEC packets need be transmitted between the encoder and decoder. The FEC packets of each FEC group may take, as inputs, data packets of a current FEC group and also an untransmitted FEC packet of a preceding FEC group. Due to relationships among the FEC packets, when transmission errors arise and data packets are lost, there remain opportunities for a decoder to recover lost data packets from earlier-received FEC groups when later-received FEC groups are decoded. This opportunity to recover data packets from earlier FEC groups may be useful in video coding and other systems, in which later-received data often cannot be decoded unless earlier-received data is decoded properly. | 09-26-2013 |
20130329799 | PREDICTIVE VIDEO CODER WITH LOW POWER REFERENCE PICTURE TRANSFORMATION - Video coders may perform perspective transformation of reference frames during coding in a manner that conserves processing resources. When a new input frame is available for coding, a camera position for the input frame may be estimated. A video coder may search for reference pictures having similar camera positions as the position of the input frame and, for each reference picture identified, the video coder may perform a prediction search to identify a reference picture that is the best prediction match for the input frame. Once the video coder identifies a reference picture to serve as a prediction source for the input frame, the video coder may derive a transform to match the reference frame data to the input frame data and may transform the reference picture accordingly. The video coder may code the input frame using the transformed reference picture as a prediction reference and may transmit coded frame data and the camera position of the input frame to a decoder. Thus, the video coder may perform derivation and execution of transforms on a limited basis which conserves system resources. | 12-12-2013 |
20140086315 | ERROR RESILIENT MANAGEMENT OF PICTURE ORDER COUNT IN PREDICTIVE CODING SYSTEMS - Coding techniques for input video may include assigning picture identifiers to input frames in either long-form or short-form formats. If a network error has occurred that results in loss of previously-coded video data, a new input frame may be assigned a picture identifier that is coded in a long-form coding format. If no network error has occurred, the input frame may be assigned a picture identifier that is coded in a short-form coding format. Long-form coding may mitigate against loss of synchronization between an encoder and a decoder by picture identifiers. | 03-27-2014 |
20140362919 | COHERENCE GROUPS: REGION DESCRIPTORS FOR LOW BIT RATE ENCODING - The invention is directed to an efficient way for encoding and decoding video. Embodiments include identifying different coding units that share a similar characteristic. The characteristic can be, for example: quantization values, modes, block sizes, color space, motion vectors, depth, facial and non-facial regions, and filter values. An encoder may then group the units together as a coherence group. An encoder may similarly create a table or other data structure of the coding units. An encoder may then extract the commonly repeating characteristic or attribute from the coding units. The encoder may transmit the coherence groups along with the data structure, and other coding units which were not part of a coherence group. The decoder may receive the data, and utilize the shared characteristic by storing locally in cache, for faster repeated decoding, and decode the coherence group together. | 12-11-2014 |
20150350560 | VIDEO CODING WITH COMPOSITION AND QUALITY ADAPTATION BASED ON DEPTH DERIVATIONS - Techniques for coding video data estimate depths of different elements within video content and identify regions within the video content based on the estimated depths. One of the regions may be assigned as an area of interest. Thereafter, video content of a region that is not an area of interest may be masked out and the resultant video content obtained from the masking may be coded. The coded video content may be transmitted to a channel. These techniques permit a coding terminal to mask out captured video content prior to coding in order to support coding policies that account for privacy interests or video composition features during a video coding session. | 12-03-2015 |
20150350646 | ADAPTIVE SYNTAX GROUPING AND COMPRESSION IN VIDEO DATA - An encoding system may include a video source that captures video image, a video coder, and a controller to manage operation of the system. The video coder may encode the video image into encoded video data using a plurality of subgroup parameters corresponding to a plurality of subgroups of pixels within a group. The controller may set the subgroup parameters for at least one of the subgroups of pixels in the video coder, based upon at least one parameters corresponding to the group. A decoding system may decode the video data based upon the motion prediction parameters. | 12-03-2015 |
20150350650 | EFFICIENT SAO SIGNALING - Methods and systems provide efficient sample adaptive offset (SAO) signaling by reducing a number of bits consumed for signaling SAO compared with conventional methods. In an embodiment, a single flag is used if a coding unit to a first scanning direction with respect to a given coding unit is off. In an embodiment, further bits may be saved if some neighboring coding units are not present, i.e. the given coding unit is an edge. For example, a flag may be skipped, e.g., not signaled, if the given coding unit does not have a neighbor. In an embodiment, a syntax element, one or more flags may signal whether SAO filtering is performed in a coding unit. Based on the syntax element, a merge flag may be skipped to save bits. In an embodiment, SAO syntax may be signaled at a slice level. | 12-03-2015 |
20150350653 | IMAGE COMPRESSION BASED ON DEVICE ORIENTATION AND LOCATION INFORMATION - An encoding system may include a video source that provides video data to be coded, a video coder, a transmitter, and a controller to manage operation of the system. The controller may control the video coder to code and compress the image information from the video source into video data, based upon one or more motion prediction parameters. The transmitter may transmit the video data. A decoding system may decode the video data based upon the motion prediction parameters. | 12-03-2015 |
20150350654 | VIDEO QUALITY ADAPTATION WITH FRAME RATE CONVERSION - During video coding, frame rate conversion (FRC) capabilities of a decoder may be estimated. Based on the estimated FRC capabilities, an encoder may select a frame rate for a video coding session and may alter a frame rate of source video to match the selected frame rate. Thereafter, the resultant video may be coded and output to a channel. By incorporating knowledge of a decoder's FRC capabilities as source video is being coded, an encoder may reduce the frame rate of source video opportunistically. Bandwidth that is conserved by avoiding coding of video data in excess of the selected frame rate may be directed to coding of the remaining video at a higher bitrate, which can lead to increased quality of the coding session as a whole. | 12-03-2015 |
20150350686 | PREENCODER ASSISTED VIDEO ENCODING - A method and system of using a pre-encoder to improve encoder efficiency. The encoder may conform to ITU-T H.265 and the pre-encoder may conform to ITU-T H. 264. The pre-encoder may receive source video data and provide information regarding various coding modes, candidate modes, and a selected mode for coding the source video data. In an embodiment, the encoder may directly use the mode selected by the pre-encoder. In another embodiment, the encoder may receive both the source video data and information regarding the various coding modes (e.g., motion information, macroblock size, intra prediction direction, rate-distortion cost, and block pixel statistics) to simplify and/or refine its mode decision process. For example, the information provided by the pre-encoder may indicate unlikely modes, which unlikely modes need not be tested by the encoder, thus saving power and time. | 12-03-2015 |
20150350687 | IN LOOP CHROMA DEBLOCKING FILTER - Chroma deblock filtering of reconstructed video samples may be performed to remove blockiness artifacts and reduce color artifacts without over-smoothing. In a first method, chroma deblocking may be performed for boundary samples of a smallest transform size, regardless of partitions and coding modes. In a second method, chroma deblocking may be performed when a boundary strength is greater than 0. In a third method, chroma deblocking may be performed regardless of boundary strengths. In a fourth method, the type of chroma deblocking to be performed may be signaled in a slice header by a flag. Furthermore, luma deblock filtering techniques may be applied to chroma deblock filtering. | 12-03-2015 |
Patent application number | Description | Published |
20110294300 | SELECTIVE ETCH FOR SILICON FILMS - A method of etching patterned heterogeneous silicon-containing structures is described and includes a remote plasma etch with inverted selectivity compared to existing remote plasma etches. The methods may be used to conformally trim polysilicon while removing little or no silicon oxide. More generally, silicon-containing films containing less oxygen are removed more rapidly than silicon-containing films which contain more oxygen. Other exemplary applications include trimming silicon carbon nitride films while essentially retaining silicon oxycarbide. Applications such as these are enabled by the methods presented herein and enable new process flows. These process flows are expected to become desirable for a variety of finer linewidth structures. Methods contained herein may also be used to etch silicon-containing films faster than nitrogen-and-silicon containing films having a greater concentration of nitrogen. | 12-01-2011 |
20120211462 | REMOTELY-EXCITED FLUORINE AND WATER VAPOR ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. The chemical reaction resulting from the combination produces reactants which etch the patterned heterogeneous structures to produce, in embodiments, a thin residual structure exhibiting little deformation. The methods may be used to conformally trim silicon oxide while removing little or no silicon, polysilicon, silicon nitride, titanium or titanium nitride. In an exemplary embodiment, the etch processes described herein have been found to remove mold oxide around a thin cylindrical conducting structure without causing the cylindrical structure to significantly deform. | 08-23-2012 |
20120238102 | METHODS FOR ETCH OF SIN FILMS - A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer. | 09-20-2012 |
20120238103 | METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS - A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer. | 09-20-2012 |
20130034968 | DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS - A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide. | 02-07-2013 |
20130045605 | DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS - A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide. | 02-21-2013 |
20130052827 | SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND OXYGEN - A method of suppressing the etch rate for exposed silicon-and-oxygen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. Examples of materials whose selectivity is increased using this technique include silicon nitride and silicon. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-oxygen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including a nitrogen-containing precursor and a hydrogen-containing precursor. The second stage of the remote plasma etch also reacts plasma effluents with the patterned heterogeneous structures to selectively remove material which lacks the protective solid by-product. The plasma effluents of the second stage are formed from a remote plasma of a fluorine-containing precursor. | 02-28-2013 |
20130059440 | SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN - A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H | 03-07-2013 |
20130089988 | SELECTIVE ETCH OF SILICON BY WAY OF METASTABLE HYDROGEN TERMINATION - Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials. | 04-11-2013 |
20130130506 | SELECTIVE SUPPRESSION OF DRY-ETCH RATE OF MATERIALS CONTAINING BOTH SILICON AND NITROGEN - A method of suppressing the etch rate for exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a two stage remote plasma etch. The etch selectivity of silicon relative to silicon nitride and other silicon-and-nitrogen-containing material is increased using the method. The first stage of the remote plasma etch reacts plasma effluents with the patterned heterogeneous structures to form protective solid by-product on the silicon-and-nitrogen-containing material. The plasma effluents of the first stage are formed from a remote plasma of a combination of precursors, including nitrogen trifluoride and hydrogen (H | 05-23-2013 |
20130130507 | DRY-ETCH FOR SILICON-AND-NITROGEN-CONTAINING FILMS - A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide. | 05-23-2013 |
20140080308 | RADICAL-COMPONENT OXIDE ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride. | 03-20-2014 |
20140080309 | DIFFERENTIAL SILICON OXIDE ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide. | 03-20-2014 |
20140080310 | SILICON-CARBON-NITRIDE SELECTIVE ETCH - A method of etching exposed silicon-nitrogen-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-nitrogen-and-carbon-containing material. The plasma effluents react with the patterned heterogeneous structures to selectively remove silicon-nitrogen-and-carbon-containing material from the exposed silicon-nitrogen-and-carbon-containing material regions while very slowly removing selected other exposed materials. The silicon-nitrogen-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element controls the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-nitrogen-and-carbon-containing material at a faster rate than exposed silicon oxide or exposed silicon nitride. | 03-20-2014 |
20140134842 | DRY ETCH PROCESS - A method for conformal dry etch of a liner material in a high aspect ratio trench is achieved by depositing or forming an inhomogeneous passivation layer which is thicker near the opening of a trench bat thinner deep within the trench. The methods described herein use a selective etch following formation of the inhomogeneous passivation layer. The selective etch etches liner material faster than the passivation material. The inhomogeneous passivation layer suppresses the etch rate of the selective etch near the top of the trench (where it would otherwise be fastest) and gives the etch a head start deeper in the trench (where it would otherwise be slowest). This method may also find utility in removing bulk material uniformly from within a trench. | 05-15-2014 |
20150235863 | RADICAL-COMPONENT OXIDE ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with a nitrogen-and-hydrogen-containing precursor. Reactants thereby produced etch the patterned heterogeneous structures with high silicon oxide selectivity while the substrate is at high temperature compared to typical Siconi™ processes. The etch proceeds without producing residue on the substrate surface. The methods may be used to remove silicon oxide while removing little or no silicon, polysilicon, silicon nitride or titanium nitride. | 08-20-2015 |
20150249018 | DIFFERENTIAL SILICON OXIDE ETCH - A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide. | 09-03-2015 |
20150318186 | METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS - A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer. | 11-05-2015 |
Patent application number | Description | Published |
20090003606 | CHANGING THE ORDER OF PUBLIC KEY CRYPTOGRAPHIC COMPUTATIONS - In one embodiment, cryptographic transformation of a message is performed by first performing a table initiation phase. This may be accomplished by creating a permutation of an order of powers and then performing a table initiation phase using a part of a key and the permuted order of powers to populate a data structure. | 01-01-2009 |
20090003607 | ALTERING THE SIZE OF WINDOWS IN PUBLIC KEY CRYPTOGRAPHIC COMPUTATIONS - In one embodiment, cryptographic transformation of a message is performed by first performing a table initiation phase. Then an exponentiation phase is performed, wherein the exponentiation phase includes two or more parsing steps, wherein each of the parsing steps includes parsing a part of a cryptographic key into a window of size n, wherein n is a difficult to predict number. | 01-01-2009 |
20090028323 | ENHANCING THE SECURITY OF PUBLIC KEY CRYPTOSYSTEM IMPLEMENTATIONS - In one embodiment, cryptographic transformation of a message is performed by first performing a table initiation phase to populate a data structure. Then, a first random number multiplied by a public key is added to each value in the data structure, in modulo of a second random number multiplied by the public key. Then an exponentiation phase is performed, wherein each modular multiplication and square operation in the exponentiation phase is performed in modulo of the second random number multiplied by the public key, producing a result. Then the result of the exponentiation phase is reduced in modulo of the public key. The introduction of the random numbers aids in the prevention of potential security breaches from the deduction of operands in the table initiation phase by malicious individuals. | 01-29-2009 |
20090126006 | SECURING CPU AFFINITY IN MULTIPROCESSOR ARCHITECTURES - In an embodiment of the present invention, the ability for a user or process to set or modify affinities is restricted in order to method for control a multi-processor environment. This may be accomplished by using a reference monitor that controls a process' capability to retrieve and set its or another process' affinity. This aids in the prevention of security breaches. | 05-14-2009 |
20090165081 | TRUSTED MULTI-STAKEHOLDER ENVIRONMENT - In one embodiment, a multi-stakeholder environment is controlled by first assigning a first domain to a first stakeholder and a second domain to a second stakeholder. Then a first access policy is defined for the first domain and access is restricted to the first domain for the second stakeholder according to the first access policy. In another embodiment, an access request is handled in a multi-stakeholder environment by first receiving parameters forwarded by hooks in system call functions in a kernel of the multi-stakeholder environment, wherein the parameters contain information about a first stakeholder requesting access to a domain corresponding to a second stakeholder. Then it is determined whether to allow the first stakeholder to access the domain based at least partially upon security settings corresponding to the domain. | 06-25-2009 |