Patent application number | Description | Published |
20090161209 | MICROSCOPE - Provided are an illuminating optical system which illuminates a sample, an illumination-side pupil modulating device which is arranged on a side of the illuminating optical system, an illumination-side turret which holds the illumination-side pupil modulating device, an illumination-side-turret revolving mechanism which revolves the illumination-side turret to move the illumination-side pupil modulating device along an orbital circumference on a plane perpendicular to an optical axis, a relaying optical system which relays a pupil of an objective lens; an imaging-side pupil modulating device which is arranged on a side of the relaying optical system, an imaging-side turret which holds the imaging-side pupil modulating device, and an imaging-side-turret revolving mechanism which revolves the imaging-side turret to move the imaging-side pupil modulating device along the orbital circumference on a plane perpendicular to the optical axis. | 06-25-2009 |
20110134517 | MICROSCOPE CONTROLLER AND MICROSCOPE SYSTEM COMPRISING MICROSCOPE CONTROLLER - In a microscope controller by which is performed an operation for controlling an operation of each of a plurality of electric units included in a microscope system, the control unit establishes a plurality of functional areas in the display region of the touch panel as regions for making operable the plurality of electric units. When an input to any of the functional areas is detected, the control unit generates a control instruction signal for controlling an electric unit corresponding to this functional area. The communication control unit transmits the control instruction signal to an external device controlling an operation of a corresponding electric unit. When an input to a predetermined functional area is detected, the control unit then reestablishes a plurality of functional areas within the display region of the touch panel so as to enlarge this functional area or a plurality of specific functional areas including this functional area. | 06-09-2011 |
20110149387 | MICROSCOPE CONTROLLER AND MICROSCOPE SYSTEM PROVIDED WITH MICROSCOPE CONTROLLER - A microscope controller includes a touch panel and a CPU having first and second recognition units. The CPU sets a plurality of operation areas including at least first and second operation areas in the display area of the touch panel. The second recognition unit recognizes a difference between the start-of-input position in which input is first detected and the end-of-input position in which the input is last detected only when the first recognition unit recognizes continuous input to the first operation area, and when input is continuously performed to the second operation area. When the difference is recognized, the CPU generates a control directive signal for control of the driving of a corresponding electric drive mechanism based on the difference. | 06-23-2011 |
20130120834 | MICROSCOPE SYSTEM - A microscope system includes a stage on which a specimen is placed; an objective lens configured to condense at least observation light from the specimen on the stage; a transmitted illumination optical system configured to irradiate the specimen with transmitted illumination light ejected from a light source, which is illumination light transmitting the specimen; and a microscope body part including a base unit holding the transmitted illumination optical system, a supporting column standing upright from the base unit, and an incident-light illumination optical system provided on the end of a side different from the base unit side of the supporting column and irradiating the specimen with incident-light illumination light which is illumination light ejected from a light source to be reflected on the specimen, wherein the stage and the transmitted illumination optical system are attachable to/detachable from the microscope body part. | 05-16-2013 |
Patent application number | Description | Published |
20090081879 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a semiconductor device including processing a substrate to be processed by using an amorphous carbon hard mask that includes processing an amorphous carbon film formed on the substrate to be processed to provide a hard mask, and forming a protective film comprising a silicon oxide film on a sidewall of the amorphous carbon film exposed during or after processing the amorphous carbon film; and the protective film preferably formed by sputtering an intermediate mask comprising at least a silicon oxide on the amorphous carbon film. | 03-26-2009 |
20090256182 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device includes a memory cell portion and a peripheral circuit portion. The memory cell portion includes a pillar capacitor with a lower electrode, a dielectric film, and an upper electrode sequentially formed on a side surface of a first insulating portion which is parallel to a predetermined direction, and a transistor electrically connected to the lower electrode. The peripheral circuit portion includes a plate electrode, a cylinder capacitor with an upper electrode, a dielectric film, and a lower electrode sequentially formed on a side surface of the plate electrode which is parallel to the predetermined direction, and a transistor electrically connected to the lower electrode. | 10-15-2009 |
20110059403 | METHOD OF FORMING WIRING PATTERN, METHOD OF FORMING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DATA PROCESSING SYSTEM - A method of forming a pattern includes the following processes. A first lithography process is performed. The first lithography process is applied to a first region of a substrate. A second lithography process is performed. The second lithography process is applied to the first region and to a second region of the substrate, to form a first pattern in the first region, and to form a second pattern in the second region. The first pattern is defined by a first dimension. The first dimension is smaller than a resolution limit of lithography. The second pattern is defined by a second dimension. The second dimension is equal to or greater than the resolution limit of lithography. | 03-10-2011 |
20110169061 | Semiconductor device and method for manufacturing the same - The semiconductor device comprises a first region, a guard ring surrounding the first region, and a second region outside of the guard ring. The first region includes a first electrode made of a first film which has conductivity. A surface of the first electrode in the first region is not covered with the second film. The guard ring includes the first film covering an inner wall of a groove having a recess shape, and a second film as an insulating film covering at least one portion of a surface of the first film in the groove. | 07-14-2011 |
20110250757 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A coating film is formed on a member to be etched, which includes an amorphous carbon film and a silicon oxynitride film, by a spin coating method; a sidewall core is formed by pattering the coating film; a silicon oxide film is formed to cover at least the side surface of the sidewall core; and an organic anti-reflection film is formed on the silicon oxide film by a spin coating method. Thereafter, an embedded mask is formed to cover concave portions of the silicon oxide film by etching the organic anti-reflection film; exposed is a portion of the member to be etched which does not overlap the sidewall core or the embedded mask by etching the silicon oxide film; and the member to be etched is etched. Thus, it is possible to obtain a pattern with a size less than the photolithography resolution limit. | 10-13-2011 |
20110260288 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is a method for manufacturing a semiconductor device comprising: a process of forming a first trench | 10-27-2011 |
20110294297 | Method of manufacturing semiconductor device - In a method of forming a dense contact-hole pattern in a semiconductor device, the method uses a self-align double patterning technique including forming a square or triangular lattice dot pattern on double layers of mask materials, forming first holes in the upper mask material and second holes wider than the first holes in the lower mask material by double patterning, additionally forming an insulating layer to a thickness such that the first holes are closed such that voids are left in the second holes, and transferring the shape of the voids to a base layer. The hole pattern formed thereby has a high precision, with a density thereof being double or triple that of a pattern formed by a lithography technique. | 12-01-2011 |
20120056255 | Semiconductor device and method of fabricating the same - A semiconductor device includes a device formation region including a plurality of unit regions arranged in series to each other, each unit region comprising first and second active regions alternately arranged in series to each other. The first active region extends in a first direction. The second active region extends obliquely to the first direction. A plurality of first semiconductor pillars is arranged in the first direction and in each of the first active regions. A second semiconductor pillar is in each of the second active regions. A first bit line includes a first diffusion layer in the device formation region. The first diffusion layer extends under the plurality of first semiconductor pillars and the second semiconductor pillar. The first bit line connects the plurality of first semiconductor pillars and the second semiconductor pillar. A second bit line is electrically connected to the second semiconductor pillar. | 03-08-2012 |
20120080734 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell portion and a peripheral circuit portion. The memory cell portion includes a pillar capacitor with a lower electrode, a dielectric film, and an upper electrode sequentially formed on a side surface of a first insulating portion which is parallel to a predetermined direction, and a transistor electrically connected to the lower electrode. The peripheral circuit portion includes a plate electrode, a cylinder capacitor with an upper electrode, a dielectric film, and a lower electrode sequentially formed on a side surface of the plate electrode which is parallel to the predetermined direction, and a transistor electrically connected to the lower electrode. | 04-05-2012 |
20120091518 | SEMICONDUCTOR DEVICE, METHOD FOR FORMING THE SAME, AND DATA PROCESSING SYSTEM - A semiconductor device includes a semiconductor substrate having a first groove, a word line in the first groove, and a buried insulating film in the first groove. The buried insulating film covers the word line. The buried insulating film comprises a silicon nitride film. | 04-19-2012 |
20130228837 | SEMICONDUCTOR DEVICE - A semiconductor device according to this invention includes a support film that supports a lower electrode of a capacitor at an upper portion, and the support film includes a first insulating material having a stress within a range of +700 MPa to −700 MPa. Use of such a support film prevents a phenomenon in which the capacitor lower electrode is twisted. Preferably, the support film has a rate etched by hydrofluoric acid of 1.0 nm/sec or less and more preferably, the support film includes a silicon carbon nitride film. | 09-05-2013 |
20150214232 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a semiconductor device which supports miniaturization. A semiconductor device comprising: an active region extending in a first direction, and a first semiconductor pillar, a second semiconductor pillar and a third semiconductor pillar which are provided upright relative to a main surface of the active region and which are disposed side by side in succession in the first direction; and comprising, between the first semiconductor pillar and the second semiconductor pillar, a first gate insulating film which is in contact with a side surface of the first semiconductor pillar, a first gate electrode which is in contact with the first gate insulating film, a second gate insulating film which is in contact with a side surface of the second semiconductor pillar, a second gate electrode which is in contact with the second gate insulating film, and a first embedded insulating film located between the first gate electrode and the second gate electrode; and comprising, between the first semiconductor pillar and the third semiconductor pillar, a second embedded insulating film which is in contact with the side surfaces of the first semiconductor pillar and the third semiconductor pillar. | 07-30-2015 |
20150287706 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device comprising: a first semiconductor chip provided with a first function, including a memory element but not including a peripheral circuit; first connection terminals provided in the first semiconductor chip; a second semiconductor chip provided with a second function, including a peripheral circuit but not including a memory element; and second connection terminals provided in the second semiconductor chip, wherein the first semiconductor chip and the second semiconductor chip are stacked on one another by causing the first connection terminals and the second connection terminals to come into contact with one another. | 10-08-2015 |
20150357336 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - This semiconductor device is provided with: a silicon pillar that is provided by digging from a main surface of a semiconductor substrate; a first diffusion layer that is provided above the silicon pillar; a second diffusion layer, that is provided from a bottom portion of the silicon pillar to one region of the semiconductor substrate, said one region being continuous to the silicon pillar; a gate electrode in contact with at least a first side surface of the silicon pillar with a gate insulating film therebetween; a first embedding insulating film that surrounds the gate electrode; a second embedding insulating film in contact with a second side surface of the silicon pillar, said second side surface facing the first side surface of the silicon pillar; and a conductive layer, which is electrically connected to the second diffusion layer, and which is in contact with the second embedding insulating film at a position separated from the silicon pillar. | 12-10-2015 |
Patent application number | Description | Published |
20090140397 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device includes capacitors formed on the surface of an interlayer insulating film in connection with capacitive contact plug, wherein capacitors are constituted of base-side lower electrode films having hollow-pillar shapes, metal plugs embedded in hollows of base-side lower electrode films, and top-side lower electrode films having hollow-pillar shapes engaged with the upper portions of the hollows as well as dielectric films and upper electrode films which are sequentially laminated so as to cover the peripheral surfaces of the base-side and top-side lower electrode films and the interior surfaces of the top-side lower electrode films. Side walls are further formed to connect together the adjacent base-side lower electrode films. Thus, it is possible to control the aspect ratio of a capacitor hole for embedding the metal plug from being excessively increased, and it is possible to increase the capacitive electrode area of each capacitor. | 06-04-2009 |
20110159695 | METHOD FOR MANUFACTURING MASK - Openings are formed in first and second mask layers. Next, diameter of the opening in the second mask layer is enlarged so that the diameter of the opening in the second mask layer becomes larger by a length X than diameter of the opening in the first mask layer. Thereafter, mask material is formed into the opening in the second mask layer, to form a cavity with a diameter X within the opening in the second mask layer. There is formed a mask which includes the second mask layer and the mask material having therein opening including the cavity. | 06-30-2011 |
20120149169 | METHOD FOR MANUFACTURING MASK - Openings are formed in first and second mask layers. Next, diameter of the opening in the second mask layer is enlarged so that the diameter of the opening in the second mask layer becomes larger by a length X than diameter of the opening in the first mask layer. Thereafter, mask material is formed into the opening in the second mask layer, to form a cavity with a diameter X within the opening in the second mask layer. There is formed a mask which includes the second mask layer and the mask material having therein opening including the cavity. | 06-14-2012 |