Patent application number | Description | Published |
20080199976 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE INCLUDING FERROELECTRIC CAPACITOR - A semiconductor device manufacturing method has a step forming a transistor layer portion on a semiconductor substrate, and a step forming a ferroelectric capacitor portion including a lower electrode, a ferroelectric substance and an upper electrode above the transistor layer portion, wherein the step forming the ferroelectric capacitor portion includes adjusting an area of the upper electrode on the basis of manufacturing parameters of the ferroelectric capacitor portion. | 08-21-2008 |
20080212804 | Sound receiver - In a sound receiver, a sound wave is directly received by microphones at a predetermined phase difference. The microphones are arranged in opening cavities of a casing, at positions that are different from the volume center points of the opening cavities. The microphones are supported by supporting springs in a state of not closely contacting inner peripheral walls. The sound wave received by the microphones is input to a signal processing unit and after a signal component in a predetermined low frequency band is removed by a filter, the resulting sound wave is amplified by an amplifier and is made in phase by a phase shifter and output. | 09-04-2008 |
20090280577 | Manufacturing method of a semiconductor device - There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode. | 11-12-2009 |
20110255709 | Audio control device and audio output device - An audio output device includes two digital microphone units that, upon receiving sound, convert the sound to PDM digital audio signals in which a state is represented by 1 or 0 in each predetermined period. The audio output device generates half-period digital audio signals, which are signals of a half period of the predetermined period, by using first digital audio signals and second digital audio signals that are the digital audio signals converted by the two digital microphones, where the states of the first digital audio signals are each reflected in one of two half periods corresponding to the predetermined period and states of the second audio signals are each reflected in the other half period. The audio output device then converts the half-period digital audio signals, which are generated by the generator, to analog audio signals and outputs the analog audio signals. | 10-20-2011 |
20120171785 | MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE - There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode. | 07-05-2012 |
Patent application number | Description | Published |
20090039477 | SILICON NITRIDE SUBSTRATE, A MANUFACTURING METHOD OF THE SILICON NITRIDE SUBSTRATE, A SILICON NITRIDE WIRING BOARD USING THE SILICON NITRIDE SUBSTRATE, AND SEMICONDUCTOR MODULE - In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of β type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in β type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa·m | 02-12-2009 |
20090101392 | CIRCUIT BOARD AND SEMICONDUCTOR MODULE USING THIS, PRODUCTION METHOD FOR CIRCUIT BOARD - An object of this invention is to get a circuit board and a semiconductor module with high endurance against thermal cycles, and which is hard to be broken under thermal cycles, even if thick metal circuit board and thick metal heat sink are used, corresponding to high power operation of semiconductor chip. This circuit board comprises, an insulating-ceramic substrate, a metal circuit plate bonded to one face of the insulating-ceramic substrate, a metal heat sink bonded to another face of the insulating-ceramic substrate, wherein (t | 04-23-2009 |
20110176277 | SILICON NITRIDE SINTERED BODY, METHOD OF PRODUCING THE SAME, AND SILICON NITRIDE CIRCUIT SUBSTRATE AND SEMICONDUCTOR MODULE USING THE SAME - Provided are a silicon nitride substrate made of a silicon nitride sintered body that is high in strength and thermal conductivity, a method of producing the silicon nitride substrate, and a silicon nitride circuit substrate and a semiconductor module that use the silicon nitride substrate. | 07-21-2011 |
20110177292 | CERAMIC ASSEMBLED BOARD, METHOD OF MANUFACTURING THE SAME, CERAMIC SUBSTRATE AND CERAMIC CIRCUIT SUBSTRATE - A ceramic assembled board shows an advantageous dividablility of allowing the board to be divided when intended and not allowing it to be divided with ease when unintended. A ceramic substrate shows an excellent degree of dimensional precision and bending strength. A ceramic circuit substrate shows a high dielectric strength. A ceramic assembled board is formed by cutting continuous dividing grooves on one or both of the surfaces of a sintered ceramic board by way of laser machining to produce a large number of circuit substrates and at least one of the continuous grooves has a largest depth section and a smallest depth section with a depth difference Δd of 10 μm ≦Δd≦50 μm. A ceramic substrate is produced by dividing the ceramic assembled board and at least one of its lateral surfaces is a surface formed by dividing the ceramic assembled board along the continuous grooves, the arithmetic mean roughness Ra2 of the machined surfaces of the continuous grooves being smaller than the arithmetic mean roughness Ra1 of the surfaces of broken sections with regard to the arithmetic mean roughness Ra of the lateral surfaces. | 07-21-2011 |
20140106129 | CERAMIC ASSEMBLED BOARD, METHOD OF MANUFACTURING THE SAME, CERAMIC SUBSTRATE AND CERAMIC CIRCUIT SUBSTRATE - A ceramic assembled board is formed by cutting continuous dividing grooves on one or both of the surfaces of a sintered ceramic board by way of laser machining to produce a large number of circuit substrates and at least one of the continuous grooves has a largest depth section and a smallest depth section with a depth difference Δd of 10 μm≦Δd≦50 μm. A ceramic substrate is produced by dividing the ceramic assembled board and at least one of its lateral surfaces is a surface formed by dividing the ceramic assembled board along the continuous grooves, the arithmetic mean roughness Ra2 of the machined surfaces of the continuous grooves being smaller than the arithmetic mean roughness Ra1 of the surfaces of broken sections with regard to the arithmetic mean roughness Ra of the lateral surfaces. | 04-17-2014 |
Patent application number | Description | Published |
20140126155 | BRAZING MATERIAL, BRAZING MATERIAL PASTE, CERAMIC CIRCUIT SUBSTRATE, CERAMIC MASTER CIRCUIT SUBSTRATE, AND POWER SEMICONDUCTOR MODULE - To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Ag powder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-μm equivalent circle average particle diameter by 0.5 to 5.0 mass %, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder≧active metal hydride powder>Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10 μm, d50 of 10 to 35 μm, and d90 of 30 to 50 μm, and in the frequency distribution, a peak of the distribution existing between d50 and d90. | 05-08-2014 |
20150216056 | CERAMIC CIRCUIT SUBSTRATE AND ITS PRODUCTION METHOD - A method for producing a ceramic circuit substrate comprising the steps of forming brazing regions each comprising brazing material powder and an organic binder on a ceramic substrate; setting metal plates on the ceramic substrate via the brazing regions, and heating the ceramic substrate, the brazing regions and the metal plates to bond the metal plates to the ceramic substrate via brazing layers made of the brazing material, thereby forming a bonded body; and cleaning the bonded body with a hypochlorite-containing agent. | 07-30-2015 |