Patent application number | Description | Published |
20110061723 | DYE SENSITISED SOLAR CELL - The present invention pertains to an electrode layer comprising a porous film made of oxide semiconductor fine particles sensitized with certain methin dyes. Moreover the present invention pertains to a photoelectric conversion device comprising said electrode layer, a dye sensitized solar cell comprising said photoelectric conversion device and to novel methin dyes. | 03-17-2011 |
20110248217 | ELECTROLUMINESCENT DEVICE - Disclosed are electroluminescent devices that comprise organic layers that contain dibenzofuran compounds. The compounds are suitable components of, for example, blue-emitting, durable, organo-electroluminescent layers. The electroluminescent devices may be employed for full color display panels in, for example, mobile phones, televisions and personal computer screens. | 10-13-2011 |
20110309343 | Organic electronic devices comprising a layer of a dibenzofurane compound and a 8-hydroxypquinolinolato earth alkaline metal, or alkali metal complex - The present invention provides an organic electronic device including a first electrode, a second electrode, and an organic layer interposed between the first electrode and the second electrode, wherein the organic layer comprises an organic metal complex of formula | 12-22-2011 |
20150056554 | Oxime Ester Photoinitiators - Compounds of formula (I), (II), and (III), wherein R | 02-26-2015 |
Patent application number | Description | Published |
20090205783 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises a process chamber accommodating stacked substrates; a heating unit heating an inside of the process chamber to a predetermined temperature; a gas supply unit supplying predetermined process gas to the inside of the process chamber; and an exhaust unit exhausting the inside of the process chamber. The gas supply unit comprises: a gas supply nozzle having a straight pipe shape and installed in a stacked direction of the substrates; a metal pipe supporting the gas supply nozzle; and a manifold forming a lower part of the process chamber. The metal pipe comprises: a first part extending from an outside of the process chamber to the inside of the processes chamber through the manifold; and a second part connected to the first part and extending in the stacked direction of the substrates. The gas supply nozzle is fitted to and supported by the second part. | 08-20-2009 |
20090263971 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device comprises: (a) loading a substrate into a process chamber, wherein the substrate has at least a silicon exposure surface and an exposure surface of silicon oxide film or silicon nitride film on a substrate surface; (b) simultaneously supplying at least a first process gas containing silicon and a second process gas for etching into the process chamber under conditions that the substrate inside the process chamber is heated to a predetermined temperature; and (c) supplying a third process gas having a stronger etchability than the second process gas into the process chamber, wherein the operation (b) and the operation (c) are performed at least one or more times so that an epitaxial film is selectively grown on the silicon exposure surface of the substrate surface | 10-22-2009 |
20100229795 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus that can suppress formation of an Si thin film on the inner wall of a film-forming gas supply nozzle. The substrate processing apparatus comprises a process chamber configured to process a substrate, a heating member configured to heat the substrate, a coating gas supply member including a coating gas supply nozzle configured to supply coating gas into the process chamber, a film-forming gas supply member including a film-forming gas supply nozzle supplying film-forming gas into the process chamber, and a control unit configured to control the heating member, the coating gas supply member, and the film-forming gas supply member. The control unit executes a control such that the coating gas supply nozzle supplies the coating gas to coat a quartz member in the process chamber and the film-forming gas supply nozzle supplies the film-forming gas to form an epitaxial film on the substrate. | 09-16-2010 |
20130078823 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A method of manufacturing a semiconductor device including: mounting a substrate on a substrate mounting member that is disposed in a reaction container; heating the substrate at a predetermined processing temperature and supplying a first gas and a second gas to the substrate to process the substrate; stopping supply of the first gas and the second gas, and supplying an inert gas into the reaction container; and unloading the substrate to outside the reaction container. | 03-28-2013 |
20140087567 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus including: a substrate mounting portion provided in a process chamber and capable of mounting a plurality of substrates in a circumferential direction; a rotating mechanism that rotates the substrate mounting portion at a predetermined angular velocity; dividing structures provided in a radial form from a center of a lid of the process chamber so as to divide the process chamber into a plurality of areas; and gas supply areas disposed between the adjacent dividing structures, wherein an angle between the adjacent dividing structures with one gas supply area interposed is set to an angle corresponding to the angular velocity and a period in which a portion of the substrate mounting portion passes through the gas supply area. | 03-27-2014 |