Patent application number | Description | Published |
20090220890 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY - A chemically amplified resist composition, comprising: a resin which includes a structural unit having an acid-labile group in a side chain, a structural unit represented by the formula (I) and a structural unit having a polycyclic lactone structure, and which is soluble in an organic solvent and insoluble or poorly soluble in an alkali aqueous solution but rendered soluble in an alkali aqueous solution by the action of an acid; and an acid generator represented by the formula (II). | 09-03-2009 |
20090263742 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - The present invention provides a chemically amplified resist composition comprising:
| 10-22-2009 |
20090264565 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME - The present invention provides a polymer comprising a structural unit represented by the formula (Ia) or (Ib): | 10-22-2009 |
20090269695 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - The present invention provides a chemically amplified resist composition comprising:
| 10-29-2009 |
20090317744 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME - A polymer comprising a structural unit represented by the formula (Ia) or (Ib): | 12-24-2009 |
20100167199 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION - A chemically amplified positive resist composition comprising: a resin comprising a structural unit having an acid-labile group in a side chain and an acid generator wherein the resin contains 40 to 90% by mole of the structural unit having an acid-labile group in a side chain based on all the structural units and the structural unit having an acid-labile group in a side chain contains a structural unit represented by the formula (I): | 07-01-2010 |
20100203446 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN - A chemically amplified photoresist composition, comprises: an acid generator (A) represented by the formula (I), and a resin which comprises a structural unit (b1) derived from a monomer that becomes soluble in an alkali by an action of an acid, a structural unit (b2) derived from a monomer that has an adamantyl group having at least two hydroxyl groups, and a structural unit (b3) derived from a monomer that has a lactone ring; | 08-12-2010 |
20100273112 | PROCESS FOR PRODUCING PHOTORESIST PATTERN - The present invention provides a process for producing a photoresist pattern comprising the following steps (A) to (D):
| 10-28-2010 |
20100279226 | RESIST PROCESSING METHOD - The present invention has the object of providing a method of manufacturing a resist pattern in which an extremely fine and highly accurate resist pattern can be formed which is obtained using the resist composition for forming a first resist pattern in a multi-patterning method such as a double patterning method. The resist processing method comprising; forming a first resist film by applying a first resist composition onto a substrate and drying, the first resist composition comprising a resin (A), a photo acid generator (B) and a cross-linking agent (C), the resin (A) having an acid-labile group, being insoluble or poorly soluble in alkali aqueous solution but of being rendered soluble in alkali aqueous solution through the action of an acid; prebaking; exposure processing; post-exposure baking; developing; hard-baking the first resist pattern; and obtaining a second resist film; pre-baking; exposure processing; post-exposure baking; developing to obtain a second resist pattern. | 11-04-2010 |
20100323296 | RESIN AND RESIST COMPOSITION - A resin comprises a structural unit derived from a compound represented by the formula (aa) | 12-23-2010 |